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7615116 |
Method for producing silicon epitaxial wafer and silicon epitaxial wafer
In a vapor phase growth apparatus including a reaction chamber, a susceptor, a lift pin, an upper heating device, and a lower heating device, a heating ratio between the upper heating ratio and the...
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7608539 |
ALD method and apparatus
A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low...
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7601215 |
Method for rapid, controllable growth and thickness, of epitaxial silicon films
A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the...
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7553370 |
Crystal growth method for nitride semiconductor and formation method for semiconductor device
Methods of crystal growth for semiconductor materials, such as nitride semiconductors, and methods of manufacturing semiconductor devices are provided. The method of crystal growth includes forming...
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7547359 |
Method of altering crystal structure of group 13 element nitride, group 13 element nitride and structure material containing cubic nitride
An aerosol of a powder composed of helium carrier gas and particles of a hexagonal aluminum nitride is charged through a transfer pipe 3 into a film deposition chamber 4 whose interior is...
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7524376 |
Method and apparatus for aluminum nitride monocrystal boule growth
A crystal growth setup within a physical vapor transport growth furnace system for producing AlN monocrystal boules at high temperatures includes a crucible effective to contain an AlN source...
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7449065 |
Method for the growth of large low-defect single crystals
A method and the benefits resulting from the product thereof are disclosed for the growth of large, low-defect single-crystals of tetrahedrally-bonded crystal materials. The process utilizes a...
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7442252 |
Method for producing single crystal of multi-element oxide single crystal containing bismuth as constituting element
The present invention provides methods for producing a multi-element oxide single crystal which contains Bi, which has high crystallinity independently of a preparation process, and which is...
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7438760 |
Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition
Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels...
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7431964 |
Method of forming a porous metal catalyst on a substrate for nanotube growth
A method is provided for forming a porous metal catalyst ( 44 ) on a substrate ( 42 ) for nanotube ( 84 ) growth in an emissive display. The method comprises depositing a metal ( 44 ) onto a...
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7416605 |
Anneal of epitaxial layer in a semiconductor device
An anneal of an epitaxially grown crystalline semiconductor layer comprising a combination of group-IV elements. The layer contains at least one of the group of carbon and tin. The layer of...
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7402206 |
Method of synthesizing a compound of the formula Mn+1AXn, film of the compound and its use
A method of synthesizing or growing a compound having the general formula M n+1 AX n ( 16 ) where M is a transition metal, n is 1, 2, 3 or higher, A is an A-group element and X is carbon, nitrogen...
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7393412 |
Method for manufacturing compound semiconductor epitaxial substrate
A method for manufacturing a compound semiconductor epitaxial substrate with few concave defects is provided. The method for manufacturing a compound semiconductor epitaxial substrate comprises a...
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7374617 |
Atomic layer deposition methods and chemical vapor deposition methods
The invention includes atomic layer deposition methods and chemical vapor deposition methods. In a particular aspect of the invention, a source of microwave radiation is provided proximate a...
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7335259 |
Growth of single crystal nanowires
The present invention provides nanowires which are substantially straight and substantially free of nanoparticles and methods for making the same The nanowires can be made by seeded approaches,...
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7311777 |
Process for manufacturing quartz crystal element
A process for manufacturing a quartz crystal element consists of the steps of producing plural quartz layers on a surface of a crystalline substrate having a lattice constant differing from that of...
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7309394 |
Ultraviolet light-emitting device in which p-type semiconductor is used
An object is to provide an ultraviolet light-emitting device in which a p-type semiconductor which has high conductivity and an emission peak in ultraviolet region, and emits light efficiently is...
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7294360 |
Conformal coatings for micro-optical elements, and method for making the same
A micro-optical element is produced through vapor deposition techniques, such as atomic layer deposition. An optical structure having a surface with uneven structures is exposed to one or more...
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7250083 |
ALD method and apparatus
A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low...
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7229501 |
Silicon epitaxial wafer and process for manufacturing the same
The present invention provides a silicon epitaxial wafer having an excellent IG capability all over the radial direction thereof and a process for manufacturing the same. The present invention is...
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7229498 |
Nanostructures produced by phase-separation during growth of (III-V)1-x(IV2)x alloys
Nanostructures ( 18 ) and methods for production thereof by phase separation during metal organic vapor-phase epitaxy (MOVPE). An embodiment of one of the methods may comprise providing a growth...
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7217324 |
Method and device for producing an electronic GaAs detector for x-ray detection for imaging
The invention relates to a method for producing an X-ray detector for imaging. By increasing the epitaxial layers, a GaAs material ( 1 ) is placed on a substrate n<+> (or p<+>) ( 2 )....
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7153363 |
Atomic layer deposition
Substrates are charged with a material by introducing the substrates into an evacuated vacuum container and exposing the surface of the substrates to a reactive gas which is adsorbed on the...
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7150789 |
Atomic layer deposition methods
An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer...
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7147715 |
Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen
A method is disclosed for producing semi-insulating silicon carbide crystal with a controlled nitrogen content. The method includes the steps of introducing an ambient gas containing hydrogen into...
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7135071 |
Fractal structure and method of forming it
A fractal structure is formed to have a plurality of regions different in fractal dimension characterizing the self-similarity. The fractal structure is grown from one or more origins under growth...
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7128787 |
Atomic layer deposition method
An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer...
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7105054 |
Method and apparatus of growing a thin film onto a substrate
A method and an apparatus for growing a thin film onto a substrate by the ALD process. The apparatus comprises a reaction chamber into which the substrate can be disposed; a plurality of inlet...
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7101434 |
Fractal structure and its forming method
A fractal structure is formed to have a plurality of regions different in fractal dimension characterizing the self-similarity. Especially in a stellar fractal structure, a region with a low...
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7094289 |
Method for manufacturing highly-crystallized oxide powder
A method for manufacturing a highly-crystallized oxide powder, wherein an oxide powder is produced by ejecting a starting material powder containing at least one metal element and/or semimetal...
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7060132 |
Method and apparatus of growing a thin film
A method and apparatus for growing a thin film onto a substrate is disclosed. According to one embodiment, a plurality of substrates, each having a width and a length, are placed in a reaction...
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7014710 |
Method of growing single crystal Gallium Nitride on silicon substrate
A method of growing single crystal Gallium Nitride on silicon substrate is disclosed including: removing oxide layer of silicon substrate, growing buffer layer of Silicon Carbon Nitride (SiCN), and...
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7011707 |
Production method for semiconductor substrate and semiconductor element
A reaction prevention layer is formed to prevent Si from reacting with a gallium nitride group semiconductor (semiconductor crystal A) which is deposited after the reaction prevention layer is...
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7011706 |
Device substrate and method for producing device substrate
A device substrate is provided having: a Si(111) substrate; a buffer layer formed by epitaxial growth on the Si(111) substrate 11 , and containing at least one of a rare earth metal oxide and an...
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7001460 |
Semiconductor element and its manufacturing method
In a semiconductor element comprising microcrystalline semiconductor, a semiconductor junction is provided within a microcrystal grain. Further, in a semiconductor element comprising...
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7001459 |
Spinel-structured metal oxide on a substrate and method of making same by molecular beam epitaxy
A method of making a spinel-structured metal oxide on a substrate by molecular beam epitaxy, comprising the step of supplying activated oxygen, a first metal atom flux, and at least one other metal...
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RE38937 |
Susceptor for vapor-phase growth apparatus
It was an objective of the present invention to provide a susceptor which can prevent a increasing phenomenon of the dopant concentration of the epitaxial layer at the peripheral portion of the...
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6972050 |
Method for depositing in particular crystalline layers, and device for carrying out the method
The invention relates to a method for depositing especially, crystalline layers onto especially, crystalline substrates, in a process chamber of a CVD reactor. At least one first and one second...
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6932866 |
Method for depositing in particular crystalline layers
The invention relates to a method and a device for depositing especially crystalline layers on especially crystalline substrates in a process chamber of a reactor housing having a water-cooled...
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6923860 |
Oxidation of material for tunnel magneto-resistive sensors
The present invention is a tunneling magnetoresistive (TMR) stack configured to operate in a current-perpendicular-to-plane (CPP) mode, wherein a sense current flows substantially perpendicular to...
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6902620 |
Atomic layer deposition systems and methods
Atomic layer deposition systems and methods are disclosed utilizing a multi-wafer sequential processing chamber. The process gases are sequentially rotated among the wafer stations to deposit a...
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6896730 |
Atomic layer deposition apparatus and methods
An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A fixed volume first precursor gas charge is provided within a gas flow...
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6875272 |
Method for preparing GaN based compound semiconductor crystal
In a method for growing a GaN based compound semiconductor on a front surface of a substrate to obtain the GaN based compound semiconductor crystal in one body, because the gas for reducing and...
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6869481 |
Method and device for regulating the differential pressure in epitaxy reactors
A method and a device for regulating a pressure in an epitaxy reactor, wherein the epitaxy reactor has a wafer handling chamber WHC, a process chamber PC, and a gate valve GV connecting the two...
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6869480 |
Method for the production of nanometer scale step height reference specimens
Methods are disclosed that provide for structures and techniques for the fabrication of ordered arrangements of crystallographically determined nanometer scale steps on single crystal substrates,...
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6863727 |
Method of depositing transition metal nitride thin films
This invention concerns a method for depositing transition metal nitride thin films by an Atomic Layer Deposition (ALD) type process. According to the method vapor-phase pulse of a source material,...
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6863726 |
Vapor phase growth method of oxide dielectric film
A vapor phase growth method of an oxide dielectric film for forming an oxide dielectric film having a perovskite crystal structure expressed by ABO 3 on a substrate according to the present...
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6841003 |
Method for forming carbon nanotubes with intermediate purification steps
Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a purification step is performed on the newly formed...
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6841002 |
Method for forming carbon nanotubes with post-treatment step
Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a post-treatment step is performed on the newly formed...
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6821340 |
Method of manufacturing silicon carbide, silicon carbide, composite material, and semiconductor element
To provide a method of manufacturing silicon carbide by forming silicon carbide on a substrate surface from an atmosphere containing a silicon carbide feedstock gas comprising at least a silicon...
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