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7402206 Method of synthesizing a compound of the formula Mn+1AXn, film of the compound and its use  
A method of synthesizing or growing a compound having the general formula M n+1 AX n ( 16 ) where M is a transition metal, n is 1, 2, 3 or higher, A is an A-group element and X is carbon, nitrogen...
7399356 Method for preparation of ferroelectric single crystal film structure using deposition method  
A film structure of a ferroelectric single crystal which can be beneficially used in the fabrication of high-performance electric and electronic parts and devices is prepared by forming an...
7396409 Acicular silicon crystal and process for producing the same  
By uniformly forming an indefinite number of microscopic acicular crystals on a surface of a silicon substrate so as to be perpendicular to the surface of the substrate by plasma CVD method using a...
7387678 GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same  
A GaN substrate comprises a GaN single crystal substrate, an Al x Ga 1-x N intermediate layer (0<x≦1) epitaxially grown on the substrate, and an GaN epitaxial layer grown on the intermediate...
7384479 Laser diode having an active layer containing N and operable in a 0.6 μm wavelength  
An optical semiconductor device operable in a 0.6 μm band includes an active layer of GaInNP sandwiched by a pair of GaInP layer with a thickness of about 2 molecular layers or less.
7377978 Method for producing silicon epitaxial wafer and silicon epitaxial wafer  
It is to provide a method for producing a silicon epitaxial wafer, which can prevent fine unevenness from occurring on a rear main surface of a silicon epitaxial wafer and which suppresses the haze...
7377976 Method for growing thin oxide films  
A method is provided for growing thin oxide films on the surface of a substrate by alternatively reacting the surface of the substrate with a metal source material and an oxygen source material....
7357837 GaN single crystal substrate and method of making the same  
The method of making a GaN single crystal substrate comprises a mask layer forming step of forming on a GaAs substrate 2 a mask layer 8 having a plurality of opening windows 10 disposed...
7351285 Method and system for forming a variable thickness seed layer  
A method and system for forming a variable thickness seed layer on a substrate for a subsequent metal electrochemical plating process, where the seed layer thickness profile improves uniformity of...
7323400 Plasma processing, deposition and ALD methods  
A plasma processing method includes providing a substrate in a processing chamber, the substrate having a surface, and generating a plasma in the processing chamber. The plasma provides at least...
7294201 Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device  
A crystal substrate and a crystal film of a III-V compound of the nitride system which are manufactured easily and have few dislocations as well as a method of manufacturing a crystal and a method...
7294200 Method for producing nitride semiconductor crystal, and nitride semiconductor wafer and nitride semiconductor device  
A method for producing a nitride semiconductor crystal comprising steps (a), (b) and (c), which steps follow in sequence as follows: a step (a) for forming fine crystal particles made of a nitride...
7273664 Preparation method of a coating of gallium nitride  
The invention concerns a monocrystalline coating crack-free coating of gallium nitride or mixed gallium nitride and another metal, on a substrate likely to cause extensive stresses in the coating,...
7273525 Methods for forming phosphorus- and/or boron-containing silica layers on substrates  
A method of forming a phosphorus- and/or boron-containing silica layer, such as a PSG, BSG, or BPSG layer, on a substrate, such as a semiconductor substrate or substrate assembly.
7270708 Susceptor, vapor phase growth apparatus, epitaxial wafer manufacturing apparatus, epitaxial wafer manufacturing method, and epitaxial wafer  
A susceptor ( 10 ) supporting a semiconductor substrate (W) in a vapor phase growth, wherein a pocket ( 11 ) is formed on an upper surface of the susceptor to arrange the semiconductor substrate...
7261776 Deposition of buffer layers on textured metal surfaces  
A method of making a multilayer article includes depositing a first material on the surface of a metal substrate to form a seed layer of the first material, the first material being deposited under...
7229498 Nanostructures produced by phase-separation during growth of (III-V)1-x(IV2)x alloys  
Nanostructures ( 18 ) and methods for production thereof by phase separation during metal organic vapor-phase epitaxy (MOVPE). An embodiment of one of the methods may comprise providing a growth...
7161148 Tip structures, devices on their basis, and methods for their preparation  
New designs of electron devices such as scanning probes and field emitters based on tip structures are proposed. The tips are prepared from whiskers that are grown from the vapor phase by the...
7128786 Process for depositing III-V semiconductor layers on a non-III-V substrate  
This invention relates to a method for depositing III-V semiconductor layers on a non III-V substrate especially a sapphire, silicon or silicon oxide substrate, or another substrate containing...
7128785 Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates  
The invention relates to a device and to a method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates. The device comprises a heated reaction...
7108748 Low temperature load and bake  
Methods are provided for low temperature, rapid baking to remove impurities from a semiconductor surface prior to in-situ deposition. Advantageously, a short, low temperature process consumes very...
7108746 Silicon fixture with roughened surface supporting wafers in chemical vapor deposition  
A silicon-based wafer support tower particularly useful for batch-mode thermal chemical vapor deposition. The surfaces of the silicon tower are bead blasted to introduce sub-surface damage, which...
7094288 Method for producing a positively doped semiconductor with large forbidden band  
A method of producing a p doped wide bandgap semiconductor including growing a semiconductor in the presence of an element apt acting as a surfactant at a growth surface of the semiconductor and...
7087114 Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate  
A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a...
7081420 Method for preparing SiC crystal and SiC crystal  
A process for closing hollow-core defects, called micropipes, during growth by CVD of a SiC crystal on a SiC single crystal substrate having hollow-core defects, and a crystal obtained according to...
7070651 Process for growing a carbon film  
A film (carbon and/or diamond) for a field emitter device, which may be utilized within a computer display, is produced by a process utilizing etching of a substrate and then depositing the film....
7033437 Method for making semiconductor device including band-engineered superlattice  
A method is for making a semiconductor device by forming a superlattice that, in turn, includes a plurality of stacked groups of layers. The method may also include forming regions for causing...
7033436 Crystal growth method for nitride semiconductor and formation method for semiconductor device  
Methods of crystal growth for semiconductor materials, such as nitride semiconductors, and methods of manufacturing semiconductor devices are provided. The method of crystal growth includes forming...
7033434 Mask for crystallizing, method of crystallizing amorphous silicon and method of manufacturing array substrate using the same  
A method of crystallizing amorphous silicon is used for manufacturing an array substrate having thin film transistors, pixel electrodes and an alignment key. The method includes forming an...
7014709 Thin layer metal chemical vapor deposition  
A CVD method deposits conformal metal layers on small features of a substrate surface. The method includes three principal operations: depositing a thin conformal layer of precursor over some or...
7011706 Device substrate and method for producing device substrate  
A device substrate is provided having: a Si(111) substrate; a buffer layer formed by epitaxial growth on the Si(111) substrate 11 , and containing at least one of a rare earth metal oxide and an...
7001460 Semiconductor element and its manufacturing method  
In a semiconductor element comprising microcrystalline semiconductor, a semiconductor junction is provided within a microcrystal grain. Further, in a semiconductor element comprising...
6995076 Relaxed SiGe films by surfactant mediation  
A metallic surfactant, e.g., Sb, Bi, As, or atomic hydrogen is used to grow a high quality, relaxed, relatively thin SiGe buffer having a very smooth surface and a very low threading dislocation...
6994751 Nitride-based semiconductor element and method of forming nitride-based semiconductor  
A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising...
6972051 Bulk single crystal gallium nitride and method of making same  
A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N;...
6964705 Method for producing semiconductor crystal  
A seed layer as a laminate of a GaN layer (second seed layer) and an AlN buffer layer (first seed layer) is formed on a sapphire substrate. A front surface thereof is etched in the form of stripes...
6958093 Free-standing (Al, Ga, In)N and parting method for forming same  
A method of forming a free-standing (Al, Ga, In)N article, by the steps including: providing an expitaxially compatible sacrificial template; depositing single crystal (Al, Ga, In)N material on the...
6905541 Method and apparatus of generating PDMAT precursor  
A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having...
6902716 Fabrication of single crystal diamond tips and their arrays  
The present invention deals with the generation of sharp single crystal diamond tips and the arrays of these tips, and their fabrication technology. The invention combines the deposition of...
6890816 Compound semiconductor structure including an epitaxial perovskite layer and method for fabricating semiconductor structures and devices  
High quality epitaxial layers of monocrystalline perovskite materials ( 18 ) can be grown overlying monocrystalline substrates ( 12 ) such as gallium arsenide wafers by forming a metal template...
6878611 Patterned strained silicon for high performance circuits  
In the preferred embodiment of this invention a method is described to convert patterned SOI regions into patterned SGOI (silicon-germanium on oxide) by the SiGe/SOI thermal mixing process to...
6875273 Method and system for manufacturing III-V Group compound semiconductor and III-V Group compound semiconductor  
In a semiconductor manufacturing system for manufacturing compound semiconductor by MOCVD, a lead-in member is provided for guiding feed gas supplied from a feed gas supply unit onto the surface of...
6875272 Method for preparing GaN based compound semiconductor crystal  
In a method for growing a GaN based compound semiconductor on a front surface of a substrate to obtain the GaN based compound semiconductor crystal in one body, because the gas for reducing and...
6869480 Method for the production of nanometer scale step height reference specimens  
Methods are disclosed that provide for structures and techniques for the fabrication of ordered arrangements of crystallographically determined nanometer scale steps on single crystal substrates,...
6861358 Deposition mask and method of preparing the same  
A deposition mask capable of relaxing nonuniformity of the thickness of a deposit formed on a substrate and reducing the width of a non-opening part of a mask layer by reducing the thickness of the...
6852160 Epitaxial oxide films via nitride conversion  
The present invention relates to oxides on suitable substrates, as converted from nitride precursors.
6849241 Device and method for depositing one or more layers on a substrate  
The invention relates to a device and method for depositing one or more layers onto at least one substrate placed inside a reaction chamber. The layers are deposited while using a liquid or solid...
6849123 Plasma processing method and method for manufacturing semiconductor device  
To plasma-process a substrate having a large area uniformly at a high process speed to form a deposition film with uniform thickness and quality and favorable characteristics. A first high...
6835414 Method for producing coated substrates  
Method for producing substrates charged with materials, including placing the substrate into an evacuated vacuum container. The substrate is exposed to a reactive gas which is adsorbed on the...
6835246 Nanostructures for hetero-expitaxial growth on silicon substrates  
Selected micro- and nanoscale, 1-dimensional and 2-dimensional periodic and random structures generated on silicon and other substrates are expected to perform as compliant, thin films for...
Matches 1 - 50 out of 246 1 2 3 4 5 >