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9039834 Non-polar gallium nitride thin films grown by metalorganic chemical vapor deposition  
Non-polar (11 20) a-plane gallium nitride (GaN) films with planar surfaces are grown on (1 102) r-plane sapphire substrates by employing a low temperature nucleation layer as a buffer layer prior...
9034104 Method for manufacturing a semiconductor device comprising single- and multi-component oxide semiconductor layers  
A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of...
9024338 Device with nitride nanowires having a shell layer and a continuous layer  
The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the...
9017633 CVD single crystal diamond material  
Single crystal diamond material produced using chemical vapour deposition (CVD), and particularly diamond material having properties suitable for use in optical applications such as lasers, is...
9011599 Method of temperature determination for deposition reactors  
A method of determining a temperature in a deposition reactor includes the steps of depositing a first epitaxial layer of silicon germanium on a substrate, depositing a second epitaxial layer of...
8986448 Method of manufacturing single crystal 3C-SiC substrate and single crystal 3C-SiC substrate obtained from the manufacturing method  
To provide a method of manufacturing a single crystal 3C-SiC substrate that can dramatically reduce surface defects generated in a processing of epitaxial growth and can secure a quality as a...
8968469 Semiconductor device and method of manufacture thereof  
A structure including a substrate, an intermediate layer provided and formed directly onto the substrate, a transition region, and a group II-VI bulk crystal material provided and formed as an...
8945302 Method for crystal growth of a metal-nonmetal compound using a metallophobic-metallophilic surfactant and a thin metal wetting layer  
Method for crystal growth from a surfactant of a metal-nonmetal (MN) compound, including the procedures of providing a seed crystal, introducing atoms of a first metal to the seed crystal thus...
8945304 Ultrahigh vacuum process for the deposition of nanotubes and nanowires  
A system and method A method of growing an elongate nanoelement from a growth surface includes: a) cleaning a growth surface on a base element;b) providing an ultrahigh vacuum reaction environment...
8936681 Method for making epitaxial structure using carbon nanotube mask  
A method for making an epitaxial structure is provided. The method includes the following steps. A substrate is provided. The substrate has an epitaxial growth surface for growing epitaxial layer....
8932403 Method of fabricating low-dislocation-density epitaxially-grown films with textured surfaces  
A method for forming a surface-textured single-crystal film layer by growing the film atop a layer of microparticles on a substrate and subsequently selectively etching away the microparticles to...
8926752 Method of producing a group III nitride crystal  
There is provided a method capable of obtaining an aluminum-based group III nitride crystal layer having a smooth surface and high crystallinity by employing only HVPE in which inexpensive raw...
8927376 Semiconductor device and method of forming epitaxial layer  
A method for forming epitaxial layer is disclosed. The method includes the steps of providing a semiconductor substrate, and forming an undoped first epitaxial layer in the semiconductor...
8876973 Film of n type (100) oriented single crystal diamond semiconductor doped with phosphorous atoms, and a method of producing the same  
There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorous atoms have been doped and a method of producing the same. The n type (100) oriented...
8871025 SiC single crystals with reduced dislocation density grown by step-wise periodic perturbation technique  
In a crystal growth method, a seed crystal 8 and a source material 4 are provided in spaced relation inside of a growth crucible 6. Starting conditions for the growth of a crystal 14 in the growth...
8852343 Apparatus for crystal growth  
Apparatus for vapor phase growing of crystals having a single multi-zone heater arranged to heat a heated zone to give a predetermined temperature profile along the length of the heated zone. A...
8821635 Method for growing Si-Ge semiconductor materials and devices on substrates  
Si—Ge materials are grown on Si(100) with Ge-rich contents (Ge>50 at. %) and precise stoichiometries SiGe, SiGe2, SiGe3 and SiGe4. New hydrides with direct Si—Ge bonds derived from the family of...
8822263 Epitaxial growth method of a zinc oxide based semiconductor layer, epitaxial crystal structure, epitaxial crystal growth apparatus, and semiconductor device  
It is provided a hetero epitaxial growth method, a hetero epitaxial crystal structure, a hetero epitaxial growth apparatus and a semiconductor device, the method includes forming a buffer layer...
8790462 Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them  
A nanoengineered structure comprising an array of more than about 1000 nanowhiskers on a substrate in a predetermined spatial configuration, for use for example as a photonic band gap array,...
8790463 Substrate processing apparatus and semiconductor device producing method  
Disclosed is a hot wall type substrate processing apparatus, including a processing chamber which is to accommodate at least one product substrate therein; a heating member which is disposed...
8754448 Semiconductor device having epitaxial layer  
A semiconductor device includes a semiconductor substrate and a plurality of transistors. The semiconductor substrate includes at least an iso region (namely an open region) and at least a dense...
8734584 Systems and methods for creating crystallographic-orientation controlled poly-silicon films  
In accordance with one aspect, the present invention provides a method for providing polycrystalline films having a controlled microstructure as well as a crystallographic texture. The methods...
8728237 Crystal growth method for nitride semiconductor having a multiquantum well structure  
A method for growing nitride semiconductor crystals contains: growing a first semiconductor layer containing InxGa1-xN (0
8728236 Low dislocation density III-V nitride substrate including filled pits and process for making the same  
Large area single crystal III-V nitride material having an area of at least 2 cm2, having a uniformly low dislocation density not exceeding 3×106 dislocations per cm2 of growth surface area, and...
8722526 Growing of gallium-nitrade layer on silicon substrate  
Embodiments relate to growing an epitaxy gallium-nitride (GaN) layer on a porous silicon (Si) substrate. The porous Si substrate has a larger surface area compared to non-porous Si substrate to...
8715413 Method for manufacturing a group III nitride semiconductor crystal and method for manufacturing a group III nitride semiconductor substrate  
The invention provides a method for manufacturing a Group III nitride semiconductor crystal. The method includes the steps of preparing a seed crystal and performing a convex surface-growing step...
8663389 Method and apparatus for crystal growth using a membrane-assisted semi-closed reactor  
A method and apparatus for depositing III-V material is provided. The apparatus includes a reactor partially enclosed by a selectively permeable membrane 12. A means is provided for generating...
8664094 Method of producing nitride nanowires with different core and shell V/III flow ratios  
The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the...
8658449 Semiconductor layer, method of manufacturing the same, laser diode, and method of manufacturing the same  
A method of manufacturing a semiconductor layer with which inactivation of impurity is able to be inhibited by a simple method, a semiconductor layer in which inactivation of impurity is...
8659023 Monocrystalline substrate including lattice matching atoms in a near surface region and a monocrystalline layer disposed on the substrate  
A monocrystalline layer having a first lattice constant on a monocrystalline substrate having a second lattice constant at least in a near-surface region, wherein the second lattice constant is...
8658118 High purity crystalline silicon, high purity silicon tetrachloride for processes for producing the same  
An object of the present invention is to provide more inexpensive high purity crystalline silicon which can satisfy not only a quality required to a raw material of silicon for a solar cell but...
8652255 Method of producing epitaxial layers with low basal plane dislocation concentrations  
A method of: flowing a silicon source gas, a carbon source gas, and a carrier gas into a growth chamber under growth conditions to epitaxial grow silicon carbide on a wafer in the growth chamber;...
8647435 HVPE apparatus and methods for growth of p-type single crystal group III nitride materials  
HVPE reactors and methods for growth of p-type group III nitride materials including p-GaN. A reaction product such as gallium chloride is delivered to a growth zone inside of a HVPE reactor by a...
8636844 Oxygen engineered single-crystal REO template  
A method of forming a template on a silicon substrate includes epitaxially growing a template of single crystal ternary rare earth oxide on a silicon substrate and epitaxially growing a single...
8617312 Systems and methods for forming layers that contain niobium and/or tantalum  
A method of forming (and system for forming) layers, such as calcium, barium, strontium, and/or magnesium, tantalates and/or niobates, and optionally titanates, on a substrate by employing a vapor...
8608848 Shaped nanocrystal particles and methods for making the same  
Shaped nanocrystal particles and methods for making shaped nanocrystal particles are disclosed. One embodiment includes a method for forming a branched, nanocrystal particle. It includes (a)...
8603243 Tracking carbon to silicon ratio in situ during silicon carbide growth  
A method of: supplying sources of carbon and silicon into a chemical vapor deposition chamber; collecting exhaust gases from the chamber; performing mass spectrometry on the exhaust gases; and...
8597427 Method of manufacturing a semiconductor device  
A semiconductor device is provided which is constituted by semiconductor devices including a thin film transistor with a GOLD structure, the GOLD structure thin film transistor being such that: a...
8591651 Epitaxial growth on low degree off-axis silicon carbide substrates and semiconductor devices made thereby  
A method of epitaxially growing a SiC layer on a single crystal SiC substrate is described. The method includes heating a single-crystal SiC substrate to a first temperature of at least 1400° C....
8580034 Low-temperature dielectric formation for devices with strained germanium-containing channels  
A method of forming a semiconductor device includes providing a substrate in a vacuum processing tool, the substrate having a strained Ge-containing layer on the substrate and a Si layer on the...
8568530 Use of cyclopentadienyl type hafnium and zirconium precursors in atomic layer deposition  
Precursors suitable for chemical vapor deposition, especially ALD, of hafnium oxide or zirconium oxide, have the general formula: (R1Cp)2MR2 wherein Cp represents a cyclopentadienyl ligand, R1 is...
8562737 Crystal growth method, crystal growth apparatus, group-III nitride crystal and group III nitride semiconductor device  
A crystal growth method, comprising the steps of: a) bringing a nitrogen material into a reaction vessel in which a mixed molten liquid comprising an alkaline metal and a group-III metal; and b)...
8551246 Method for evaluating oxide dielectric breakdown voltage of a silicon single crystal wafer  
A method for manufacturing a silicon single crystal wafer, having at least: a step of preparing a silicon single crystal ingot; a step of slicing the silicon single crystal ingot to fabricate a...
8545626 Nitride semiconductor crystal and its production method  
A method for efficiently producing a plate-like nitride semiconductor crystal having the desired principal plane in a simple method is provided. A raw material gas is fed to a seed crystal in...
8529699 Method of growing zinc-oxide-based semiconductor and method of manufacturing semiconductor light emitting device  
A method includes the steps of, using water vapor and a metalorganic compound not containing oxygen, (a) performing crystal growth at a low growth temperature and at a low growth pressure in the...
8529697 Growth of nitride semiconductor crystals  
A process for growing a crystal of a nitride semiconductor in which after the step of mounting a substrate (12) in a reaction tube (11), the step of feeding a first material gas containing a Group...
8507950 Method of producing semiconductor wafer and semiconductor wafer  
A method of producing a semiconductor wafer includes placing a base wafer within a reaction chamber, and epitaxially growing a p-type Group 3-5 compound semiconductor on the base wafer by...
8501141 Method for producing group III nitride semiconductor  
An object of the present invention is to effectively add Ge in the production of GaN through the Na flux method. In a crucible, a seed crystal substrate is placed such that one end of the...
8470091 SiC single crystal substrate, SiC single crystal epitaxial wafer, and SiC semiconductor device  
A direction of a dislocation line of a threading dislocation is aligned, and an angle between the direction of the dislocation line of the threading dislocation and a [0001]-orientation c-axis is...
8470090 AlN crystal and method for growing the same, and AlN crystal substrate  
Affords large-diametric-span AlN crystals, applicable to various types of semiconductor devices, with superior crystallinity, a method of growing the AlN crystals, and AlN crystal substrates. The...