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7618492 |
Methods of forming nanocrystals
Methods of selectively forming nanocrystals on semiconductor devices are disclosed. Regions of a workpiece are masked with a masking material, and the nanocrystals are formed on the unmasked...
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7608539 |
ALD method and apparatus
A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low...
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7608147 |
Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them
A nanoengineered structure comprising an array of more than about 1000 nanowhiskers on a substrate in a predetermined spatial configuration, for use for example as a photonic band gap array,...
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7604697 |
Heteroepitaxial growth method for gallium nitride
A heteroepitaxial growth method for gallium nitride yields gallium nitride which contains good quality fine crystals and has excellent optical properties, on a quartz substrate or a silicon...
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7601217 |
Method of fabricating an epitaxially grown layer
A method of forming an epitaxially grown layer, preferably by providing a region of weakness in a support substrate and transferring a nucleation portion to the support substrate by bonding. A...
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7601215 |
Method for rapid, controllable growth and thickness, of epitaxial silicon films
A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the...
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7594966 |
Method for producing a single crystal
A method for producing a single crystal by pulling a single crystal from a raw material melt in a chamber according to the Czochralski method, including pulling a single crystal having a...
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7576372 |
Method for making free-standing AlGaN wafer, wafer produced thereby, and associated methods and devices using the wafer
A method for making a free-standing, single crystal, aluminum gallium nitride (AlGaN) wafer includes forming a single crystal AlGaN layer directly on a single crystal LiAlO 2 substrate using an...
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7572333 |
Method for manufacturing semiconductor device
A semiconductor manufacturing apparatus includes a hot plate which heats a sapphire substrate; a support table having a support plate disposed as being spaced away from the hot plate by a...
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7563321 |
Process for producing high quality large size silicon carbide crystals
The invention is an improvement in the method of producing a high quality bulk single crystal of silicon carbide in a seeded sublimation system. In a first embodiment, the improvement comprises...
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7553468 |
Method for producing solid product
Provided is a production method for producing a solid product by a reaction of gaseous raw materials with a plurality of components including a step of conducting the reaction using a reactor...
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7553372 |
Method of growing semiconductor crystal
SiC is a very stable substance, and it is difficult to control the condition of a SiC surface to be suitable for crystal growth in conventional Group III nitride crystal growing apparatuses. This...
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7553370 |
Crystal growth method for nitride semiconductor and formation method for semiconductor device
Methods of crystal growth for semiconductor materials, such as nitride semiconductors, and methods of manufacturing semiconductor devices are provided. The method of crystal growth includes forming...
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7553369 |
Method of altering the properties of a thin film and substrate implementing said method
The invention relates to a process for modifying the properties of a thin layer ( 1 ) formed on the surface of a support ( 2 ) forming a substrate ( 3 ) utilised in the field of microelectronics,...
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7547360 |
Reduction of carbon inclusions in sublimation grown SiC single crystals
In a method of SiC single crystal growth, a SiC single crystal seed and polycrystalline SiC source material are provided in spaced relation inside of a graphite growth crucible along with at least...
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7547359 |
Method of altering crystal structure of group 13 element nitride, group 13 element nitride and structure material containing cubic nitride
An aerosol of a powder composed of helium carrier gas and particles of a hexagonal aluminum nitride is charged through a transfer pipe 3 into a film deposition chamber 4 whose interior is...
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7540920 |
Silicon-containing layer deposition with silicon compounds
Embodiments of the invention generally provide a composition of silicon compounds and methods for using the silicon compounds to deposit a silicon-containing film. The processes employ introducing...
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7537659 |
Method of obtaining a CdTe or CdZnTe single crystal and the single crystal thus obtained
The invention relates to the field of CdTe or CdZnTe single crystal production and to an improved solid-phase method of obtaining large CdTe or CdZnTe crystals having an excellent crystalline...
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7534310 |
Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate
A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a...
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7534296 |
Electrically conductive diamond electrodes
An electrically conductive diamond electrode and process for preparation thereof is described. The electrode comprises diamond particles coated with electrically conductive doped diamond preferably...
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7524376 |
Method and apparatus for aluminum nitride monocrystal boule growth
A crystal growth setup within a physical vapor transport growth furnace system for producing AlN monocrystal boules at high temperatures includes a crucible effective to contain an AlN source...
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7517406 |
Magnetic garnet material, faraday rotator, optical device, bismuth-substituted rare earth-iron-garnet single-crystal film and method for producing the same and crucible for producing the same
Proposed is a technique of producing a magnetic garnet material of which the light absorption characteristics worsen little even though it is produced through LPE. The crucible for LPE is formed of...
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7514342 |
Method and apparatus for forming deposited film
A method of forming a deposited film according to the present invention includes: introducing a starting gas into a discharge space in a reaction vessel; and applying electric power to generate...
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7494546 |
Method of growing insulating, semiconducting, and conducting group III-nitride thin films and coatings, and use as radiation hard coatings for electronics and optoelectronic devices
The present invention describes use of electron beam evaporation method for fabrication of group III-nitride thin films. The fabricated thin films found to have desirable crystalline and optical...
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7494545 |
Epitaxial deposition process and apparatus
An epitaxial deposition process including a dry etch process, followed by an epitaxial deposition process is disclosed. The dry etch process involves placing a substrate to be cleaned into a...
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7491269 |
Method for catalytic growth of nanotubes or nanofibers comprising a NiSi alloy diffusion barrier
The invention relates to a process for the growth of nanotubes or nanofibers on a substrate comprising at least an upper layer made of a first material, wherein: the formation, on the surface of...
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7481880 |
Mask and method for crystallizing amorphous silicon
A method of crystallizing amorphous silicon includes forming an amorphous silicon layer on a substrate, placing a mask over the substrate including the amorphous silicon layer, and applying a laser...
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7479443 |
Germanium deposition
A method comprises, in a reaction chamber, depositing a seed layer of germanium over a silicon-containing surface at a first temperature. The seed layer has a thickness between about one monolayer...
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7479187 |
Method for manufacturing silicon epitaxial wafer
A silicon epitaxial wafer manufacturing method, in which a vapor phase growth of a silicon epitaxial layer is performed on a front surface of a silicon single crystal substrate (W) arranged in the...
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7473316 |
Method of growing nitrogenous semiconductor crystal materials
What is described here is a process for the initial growth of nitrogenous semiconductor crystal materials in the form A X B Y C Z N V M W wherein A, B, C is an element of group II or III, N is...
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7465499 |
Boron phosphide-based semiconductor device, production method thereof, light-emitting diode and boron phosphide-based semiconductor layer
A boron phosphide-based semiconductor device enhanced in properties includes a substrate ( 11 ) composed of a {111}-Si single crystal having a surface {111} crystal plane and a boron...
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7465353 |
Method for growing epitaxial crystal
It is to provide a method for growing an epitaxial crystal in which the doping conditions are set when an epitaxial crystal having a desired carrier concentration is grown. A method for growing an...
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7462239 |
Low temperature load and bake
Methods are provided for low temperature, rapid baking to remove impurities from a semiconductor surface prior to in-situ deposition. Advantageously, a short, low temperature process consumes very...
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7459024 |
Method of forming an N-type doped single crystal diamond
Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased...
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7455730 |
Method for growth of silicon carbide single crystal, silicon carbide seed crystal, and silicon carbide single crystal
A method for producing a single crystal includes supplying a vapor gas from silicon carbide as a raw material to a seed crystal formed of a silicon carbide single crystal to grow the seed crystal....
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7442253 |
Process for forming low defect density, ideal oxygen precipitating silicon
The present invention is directed to a process for producing a silicon wafer which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, may form...
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7442252 |
Method for producing single crystal of multi-element oxide single crystal containing bismuth as constituting element
The present invention provides methods for producing a multi-element oxide single crystal which contains Bi, which has high crystallinity independently of a preparation process, and which is...
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7438762 |
Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate
A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001)...
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7438760 |
Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition
Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels...
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7435297 |
Molten-salt-based growth of group III nitrides
A method for growing Group III nitride materials using a molten halide salt as a solvent to solubilize the Group-III ions and nitride ions that react to form the Group III nitride material. The...
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7431767 |
Apparatus and method for growth of a thin film
An improved apparatus and method for substrate layer deposition in which substrate layers are grown by carrier gas delivery of sequential pulses of reactants to the substrate surface. At least one...
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7427326 |
Minimizing degradation of SiC bipolar semiconductor devices
A method of forming a bipolar device includes forming at least one p-type layer of single crystal silicon carbide and at least one n-type layer of single crystal silicon carbide on a substrate....
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7416606 |
Method of forming a layer of silicon carbide on a silicon wafer
The invention relates to a method of forming a layer of silicon carbide on a silicone wafer. The method includes the following steps: depositing an anti-carburation mask on the wafer using an...
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7416605 |
Anneal of epitaxial layer in a semiconductor device
An anneal of an epitaxially grown crystalline semiconductor layer comprising a combination of group-IV elements. The layer contains at least one of the group of carbon and tin. The layer of...
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7416604 |
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement...
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7404858 |
Method for epitaxial growth of silicon carbide
A method for epitaxial growth of silicon carbide using chemical vapor deposition (CVD) is provided. This method utilizes halogenated carbon precursors and control of the gas-phase interaction of...
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7393412 |
Method for manufacturing compound semiconductor epitaxial substrate
A method for manufacturing a compound semiconductor epitaxial substrate with few concave defects is provided. The method for manufacturing a compound semiconductor epitaxial substrate comprises a...
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7387678 |
GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same
A GaN substrate comprises a GaN single crystal substrate, an Al x Ga 1-x N intermediate layer (0<x≦1) epitaxially grown on the substrate, and an GaN epitaxial layer grown on the intermediate...
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7384479 |
Laser diode having an active layer containing N and operable in a 0.6 μm wavelength
An optical semiconductor device operable in a 0.6 μm band includes an active layer of GaInNP sandwiched by a pair of GaInP layer with a thickness of about 2 molecular layers or less.
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7377978 |
Method for producing silicon epitaxial wafer and silicon epitaxial wafer
It is to provide a method for producing a silicon epitaxial wafer, which can prevent fine unevenness from occurring on a rear main surface of a silicon epitaxial wafer and which suppresses the haze...
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