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7621998 |
Single crystalline gallium nitride thick film having reduced bending deformation
The present invention relates to a freestanding, thick, single crystalline gallium nitride (GaN) film having significantly reduced bending deformation. The inventive GaN film having a crystal tilt...
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7615203 |
Single crystal diamond
A single crystal diamond grown by vapor phase synthesis, wherein when one main surface is irradiated with a linearly polarized light considered to be the synthesis of two mutually perpendicular...
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7608539 |
ALD method and apparatus
A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low...
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7608147 |
Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them
A nanoengineered structure comprising an array of more than about 1000 nanowhiskers on a substrate in a predetermined spatial configuration, for use for example as a photonic band gap array,...
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7605083 |
Formation of composite tungsten films
Embodiments of the invention provide methods for depositing tungsten materials. In one embodiment, a method for forming a composite tungsten film is provided which includes positioning a substrate...
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7594967 |
Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy
A semiconductor structure including a cap layer formed over a semiconductor substrate having a rough edge, which discourages formation of dislocation pile-up defects.
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7579263 |
Threading-dislocation-free nanoheteroepitaxy of Ge on Si using self-directed touch-down of Ge through a thin SiO2 layer
A method of forming a virtually defect free lattice mismatched nanoheteroepitaxial layer is disclosed. The method includes forming an interface layer on a portion of a substrate. A plurality of...
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7563321 |
Process for producing high quality large size silicon carbide crystals
The invention is an improvement in the method of producing a high quality bulk single crystal of silicon carbide in a seeded sublimation system. In a first embodiment, the improvement comprises...
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7556688 |
Method for achieving low defect density AlGaN single crystal boules
A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic...
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7553468 |
Method for producing solid product
Provided is a production method for producing a solid product by a reaction of gaseous raw materials with a plurality of components including a step of conducting the reaction using a reactor...
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7553373 |
Silicon carbide single crystal and production thereof
A method of producing a silicon carbide single crystal, having:
fixing a seed crystal, including setting a seed crystal on a seed crystal fixing part with interposition of an adhesive;...
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7553372 |
Method of growing semiconductor crystal
SiC is a very stable substance, and it is difficult to control the condition of a SiC surface to be suitable for crystal growth in conventional Group III nitride crystal growing apparatuses. This...
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7553370 |
Crystal growth method for nitride semiconductor and formation method for semiconductor device
Methods of crystal growth for semiconductor materials, such as nitride semiconductors, and methods of manufacturing semiconductor devices are provided. The method of crystal growth includes forming...
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7553369 |
Method of altering the properties of a thin film and substrate implementing said method
The invention relates to a process for modifying the properties of a thin layer ( 1 ) formed on the surface of a support ( 2 ) forming a substrate ( 3 ) utilised in the field of microelectronics,...
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7547360 |
Reduction of carbon inclusions in sublimation grown SiC single crystals
In a method of SiC single crystal growth, a SiC single crystal seed and polycrystalline SiC source material are provided in spaced relation inside of a graphite growth crucible along with at least...
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7544249 |
Large-diameter SiC wafer and manufacturing method thereof
From the viewpoint of manufacturing an SiC semiconductor device economically, a present Si device manufacturing line is utilized to make it possible to handle a small-diameter SiC wafer....
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7520930 |
Silicon carbide single crystal and a method for its production
A bulk silicon carbide single crystal of good crystalline quality which includes a minimized number of structural defects and is free from micropipe defects can be produced by crystal growth in a...
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7501023 |
Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
A method and apparatus for growing low defect, optically transparent, colorless, crack-free, substantially flat, single crystal Group III nitride epitaxial layers with a thickness of at least 10...
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7501022 |
Methods of fabricating silicon carbide crystals
Methods for producing silicon carbide crystals, seed crystal holders and seed crystal for use in producing silicon carbide crystals and silicon carbide crystals are provided. Silicon carbide...
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RE40647 |
Method of producing plasma display panel with protective layer of an alkaline earth oxide
The first object of the present invention is to provide a PDP with improved panel brightness which is achieved by improving the efficiency in conversion from discharge energy to visible rays. The...
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7494546 |
Method of growing insulating, semiconducting, and conducting group III-nitride thin films and coatings, and use as radiation hard coatings for electronics and optoelectronic devices
The present invention describes use of electron beam evaporation method for fabrication of group III-nitride thin films. The fabricated thin films found to have desirable crystalline and optical...
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7488385 |
Method for epitaxial growth of a gallium nitride film separated from its substrate
The invention concerns the preparation of gallium nitride films by epitaxy with reduced defect density levels. It concerns a method for producing a gallium nitride (GaN) film by epitaxial...
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7482037 |
Methods for forming niobium and/or vanadium containing layers using atomic layer deposition
A method of forming a metal containing layer on a substrate, particularly a semiconductor substrate or substrate assembly for use in manufacturing a semiconductor or memory device structure, using...
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7481881 |
Method of manufacturing GaN crystal substrate
Affords a method of manufacturing GaN crystal substrate in which enlargement of pit size in the growing of GaN crystal is inhibited to enable GaN crystal substrate with a high substrate-acquisition...
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7481879 |
Diamond single crystal substrate manufacturing method and diamond single crystal substrate
A diamond single crystal substrate manufacturing method for growing by vapor-phase synthesis a single crystal from a diamond single crystal seed substrate, comprising etching away by reactive ion...
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7476420 |
Process for producing metal oxide films at low temperatures
A process for producing metal oxide thin films on a substrate by the ALD method comprises the steps of bonding no more than about a molecular monolayer of a gaseous metal compound to a growth...
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7468103 |
Method of manufacturing gallium nitride-based single crystal substrate
Disclosed herein is a method of manufacturing a gallium nitride-based (Al x In y Ga (1−x−y) N, where 0≦x≦1, 0≦y≦1, 0≦x+y≦1) single crystal substrate. The method comprises the steps...
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7465499 |
Boron phosphide-based semiconductor device, production method thereof, light-emitting diode and boron phosphide-based semiconductor layer
A boron phosphide-based semiconductor device enhanced in properties includes a substrate ( 11 ) composed of a {111}-Si single crystal having a surface {111} crystal plane and a boron...
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7465354 |
Patterned ferroelectric thin films for microwave devices
A process, for patterning a thin film that is highly resistant to conventional etching processes and that is to be deposited at a high substrate temperature, is disclosed. The process uses a...
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7465353 |
Method for growing epitaxial crystal
It is to provide a method for growing an epitaxial crystal in which the doping conditions are set when an epitaxial crystal having a desired carrier concentration is grown. A method for growing an...
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7459025 |
Methods for transferring a layer onto a substrate
Systems and methods for transferring a thin film from a substrate onto another substrate, a layer of the same area as the substrate, of a thickness from sub-micron to tens of micron, and of the...
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7445672 |
Method of forming group-III nitride crystal, layered structure and epitaxial substrate
Heat treatment is conducted at a predetermined temperature of not less than 1250° C. on an underlying substrate obtained by epitaxially forming a first group-III nitride crystal on a predetermined...
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7442252 |
Method for producing single crystal of multi-element oxide single crystal containing bismuth as constituting element
The present invention provides methods for producing a multi-element oxide single crystal which contains Bi, which has high crystallinity independently of a preparation process, and which is...
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7438761 |
Apparatus for fabricating a III-V nitride film and a method for fabricating the same
A hydrogen chloride gas and an ammonia gas are introduced with a carrier gas into a reactor in which a substrate and at least an aluminum metallic material through conduits. Then, the hydrogen gas...
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7438760 |
Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition
Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels...
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7402206 |
Method of synthesizing a compound of the formula Mn+1AXn, film of the compound and its use
A method of synthesizing or growing a compound having the general formula M n+1 AX n ( 16 ) where M is a transition metal, n is 1, 2, 3 or higher, A is an A-group element and X is carbon, nitrogen...
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7399357 |
Atomic layer deposition using multilayers
A method for the controlled growth of thin films by atomic layer deposition by making use of multilayers and using energetic radicals to facilitate the process is described in this invention. In...
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7396409 |
Acicular silicon crystal and process for producing the same
By uniformly forming an indefinite number of microscopic acicular crystals on a surface of a silicon substrate so as to be perpendicular to the surface of the substrate by plasma CVD method using a...
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7393410 |
Method of manufacturing nano-wire
There is provided a method of manufacturing a nano-wire using a crystal structure. In the method of manufacturing a nano-wire, a crystal grain having a plurality of crystal faces is used as a seed,...
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7384867 |
Formation of composite tungsten films
Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and...
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7377978 |
Method for producing silicon epitaxial wafer and silicon epitaxial wafer
It is to provide a method for producing a silicon epitaxial wafer, which can prevent fine unevenness from occurring on a rear main surface of a silicon epitaxial wafer and which suppresses the haze...
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7377977 |
High-purity crystal growth
A method of growing a crystal on a substrate disposed in a reactor, that provides a reactor chamber in which the substrate is disposed, includes flowing reactive gases inside the reactor chamber...
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7374617 |
Atomic layer deposition methods and chemical vapor deposition methods
The invention includes atomic layer deposition methods and chemical vapor deposition methods. In a particular aspect of the invention, a source of microwave radiation is provided proximate a...
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7371281 |
Silicon carbide single crystal and method and apparatus for producing the same
A growth crucible ( 2 ) for depositing on a seed crystal substrate ( 5 ) a silicon carbide single crystal ( 6 ) using a sublimate gas of a silicon carbide raw material ( 11 ) is disposed inside of...
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7361220 |
Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method
The present invention provides a method of manufacturing a gallium nitride single crystal that can suppress the decomposition of gallium nitride and improve production efficiency in a sublimation...
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7357838 |
Relaxed silicon germanium substrate with low defect density
A method of forming a strained silicon layer on a relaxed, low defect density semiconductor alloy layer such as SiGe is provided.
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7351285 |
Method and system for forming a variable thickness seed layer
A method and system for forming a variable thickness seed layer on a substrate for a subsequent metal electrochemical plating process, where the seed layer thickness profile improves uniformity of...
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7341628 |
Method to reduce crystal defects particularly in group III-nitride layers and substrates
Gallium Nitride layers grown as single crystals by epitaxy such as Hydride Vapor Phase Epitaxy (HVPE) contain large numbers of crystal defects such as hexagonal pits, which limit the yield and...
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7338582 |
Method for manufacturing manganese oxide nanostructure and oxygen reduction electrode using said manganese oxide nanostructure
It is an object of the present invention to provide an oxygen reduction electrode having excellent oxygen reduction catalysis ability. In a method of manufacturing a manganese oxide nanostructure...
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7335259 |
Growth of single crystal nanowires
The present invention provides nanowires which are substantially straight and substantially free of nanoparticles and methods for making the same The nanowires can be made by seeded approaches,...
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