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7572332 |
Self-composite comprised of nanocrystalline diamond and a non-diamond component useful for thermoelectric applications
One provides nanocrystalline diamond material that comprises a plurality of substantially ordered diamond crystallites that are sized no larger than about 10 nanometers. One then disposes a...
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7563321 |
Process for producing high quality large size silicon carbide crystals
The invention is an improvement in the method of producing a high quality bulk single crystal of silicon carbide in a seeded sublimation system. In a first embodiment, the improvement comprises...
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7553468 |
Method for producing solid product
Provided is a production method for producing a solid product by a reaction of gaseous raw materials with a plurality of components including a step of conducting the reaction using a reactor...
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7442252 |
Method for producing single crystal of multi-element oxide single crystal containing bismuth as constituting element
The present invention provides methods for producing a multi-element oxide single crystal which contains Bi, which has high crystallinity independently of a preparation process, and which is...
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7393410 |
Method of manufacturing nano-wire
There is provided a method of manufacturing a nano-wire using a crystal structure. In the method of manufacturing a nano-wire, a crystal grain having a plurality of crystal faces is used as a seed,...
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7390581 |
Vicinal gallium nitride substrate for high quality homoepitaxy
A III-V nitride, e.g., GaN, substrate including a (0001) surface offcut from the <0001> direction predominantly toward a direction selected from the group consisting of <10-10> and...
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7351285 |
Method and system for forming a variable thickness seed layer
A method and system for forming a variable thickness seed layer on a substrate for a subsequent metal electrochemical plating process, where the seed layer thickness profile improves uniformity of...
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7335259 |
Growth of single crystal nanowires
The present invention provides nanowires which are substantially straight and substantially free of nanoparticles and methods for making the same The nanowires can be made by seeded approaches,...
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7311776 |
Localized synthesis and self-assembly of nanostructures
Systems and methods for local synthesis of silicon nanowires and carbon nanotubes, as well as electric field assisted self-assembly of silicon nanowires and carbon nanotubes, are described. By...
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7303815 |
Functional bimorph composite nanotapes and methods of fabrication
A two-layer nanotape that includes a nanoribbon substrate and an oxide that is epitaxially deposited on a flat surface of the nanoribbon substrate is described. The oxide is deposited on the...
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7303628 |
Nanocrystals with linear and branched topology
Disclosed herein are nanostructures comprising distinct dots and rods coupled through potential barriers of tuneable height and width, and arranged in three dimensional space at well defined angles...
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7288150 |
Homogeneous incorporation of activator element in a storage phosphor
A method has been disclosed for manufacturing a storage phosphor for use in a photostimulable phosphor screen or panel comprising a support and a storage phosphor layer, wherein a dopant or...
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7285378 |
Juxtaposed island manufacturing method by means of self-organised deposition on a substrate and structure obtained using said method
The invention relates to a structure composed of a substrate wherein a surface supports juxtaposed islands, characterized in that the islands rest on a periodic network of terraces composed of the...
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7258807 |
Controlled growth of gallium nitride nanostructures
A transition metal substituted, amorphous mesoporous silica framework with a high degree of structural order and a narrow pore diameter distribution (±0.15 nm FWHM) was synthesized and used for...
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7211143 |
Sacrificial template method of fabricating a nanotube
Methods of fabricating uniform nanotubes are described in which nanotubes were synthesized as sheaths over nanowire templates, such as using a chemical vapor deposition process. For example,...
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7153361 |
Production method of opto-electronic device array
An opto-electronic device array is made from a multilayer epitaxial film by the following steps. The multilayer epitaxial film is separated into a plurality of segments. The segments are...
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7105053 |
Energy efficient method for growing polycrystalline silicon
Polysilicon dendrites are grown by depositing silicon on a polysilicon rod or other substrate. Surface temperature is increased to a temperature at which needle-like dendrites develop due to the...
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7022184 |
Atomic layer CVD
Atomic layer deposition is used to provide a solid film on a plurality of disc shaped substrates. The substrates are entered spaced apart in a boat, in a furnace and heated to deposition...
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7018549 |
Method of fabricating multiple nanowires of uniform length from a single catalytic nanoparticle
A method is described for fabricating multiple nanowires of uniform length from a single precursor nucleation particle. The method includes growing a first nanowire segment from a nanoparticle and...
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7001460 |
Semiconductor element and its manufacturing method
In a semiconductor element comprising microcrystalline semiconductor, a semiconductor junction is provided within a microcrystal grain. Further, in a semiconductor element comprising...
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6858080 |
Tunable CVD diamond structures
Monocrystalline diamond, adapted for use as in applications such as semiconductor devices, optical waveguides, and industrial applications, in the form of a single crystalline diamond structure...
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6719841 |
Manufacturing method for high-density magnetic data storage media
A method of fabricating a high-density magnetic data-storage medium, the method comprising the steps of: (a) forming a plurality of nanodots of non-magnetic material in a regular array on a surface...
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6627552 |
Method for preparing epitaxial-substrate and method for manufacturing semiconductor device employing the same
The present invention provides a method for preparing epitaxial-substrate, for growing a multilayered structure of GaN based semiconductor layers on the epitaxial-substrate so as to construct a...
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6623559 |
Method for the production of semiconductor quantum particles
A method for producing compound semiconductor quantum particles from at least a metallic element selected from Groups IIA, IIB, IIIA, IVA, and VA of the Periodic Table and at least a non-oxygen...
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6596079 |
III-V nitride substrate boule and method of making and using the same
A boule formed by high rate vapor phase growth of Group III-V nitride boules (ingots) on native nitride seeds, from which wafers may be derived for fabrication of microelectronic device structures....
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6313015 |
Growth method for silicon nanowires and nanoparticle chains from silicon monoxide
Silicon nanowires and silicon nanoparticle chains are formed by the activation of silicon monoxide in the vapor phase. The silicon monoxide source may be solid or gaseous, and the activation may be...
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6221154 |
Method for growing beta-silicon carbide nanorods, and preparation of patterned field-emitters by chemical vapor depositon (CVD)
A method and an apparatus have been developed to grow beta-silicon carbide nanorods, and prepare patterned field-emitters using different kinds of chemical vapor deposition methods. The apparatus...
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6217649 |
Continuous melt replenishment for crystal growth
The invention features a method of continuous crystalline growth. A granular source material is introduced into a hopper. A volume of the granular source material exiting the hopper is disposed on...
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6130397 |
Thermal plasma annealing system, and annealing process
A thermal plasma annealing system comprises a radiation irradiation means for irradiating a thin film formed on a substrate with heat or radiation emitted from a thermal plasma. This annealing...
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6110275 |
Manufacture of titanium carbide, nitride and carbonitride whiskers
There is disclosed a method of producing, in large volume and at low cost, titanium carbide, nitride and carbonitride whiskers, with preferably submicron diameters, to be used as reinforcing...
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6090666 |
Method for fabricating semiconductor nanocrystal and semiconductor memory device using the semiconductor nanocrystal
There are provided a method for fabricating semiconductor nanocrystals which are highly controllable and less variable in density and size, as well as a semiconductor memory device which, with the...
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6086672 |
Growth of bulk single crystals of aluminum nitride: silicon carbide alloys
Bulk, low impurity aluminum nitride:silicon carbide (AlN:SiC) alloy single crystals are grown by deposition of vapor species containing Al, Si, N and C on a crystal growth interface.
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5964942 |
Wafer and method of producing same
No wide bulk diamond wafer exists at present. A wide diamond-coated wafer is proposed instead of the bulk diamond wafer. Diamond is heteroepitaxially deposited on a convex-distorted non-diamond...
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5958132 |
SiC single crystal and method for growth thereof
A method for the growth of a SiC single crystal comprising introducing a seed crystal of SiC single crystal having an exposed face deviating from the {0001} plane by an angle α 1 of about 60°...
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5897945 |
Metal oxide nanorods
Metal oxide nanorods and composite materials containing such nanorods. The metal oxide nanorods have diameters between 1 and 200 nm and aspect ratios between 5 and 2000.
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5853477 |
Manufacture of transition metal carbide, nitride and carbonitride whiskers
There is disclosed a method of producing, in large volumes and at low cost, Ta, Nb, Zr and Hf carbide, nitride or carbonitride whiskers, preferably submicron, having excellent reinforcing...
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5851285 |
Manufacture of transition metal carbide, nitride, and carbonitride whiskers containing two or more transition metals
There is disclosed a method of producing whiskers in large volumes and at low cost to be used as reinforcing material. The whiskers are solid solutions between two or more transition metal...
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5817173 |
Method for making spherical crystals
The present invention relates to a method for forming crystal substrates on which can be easily formed spherical crystals which have superior crystal structure and little defect in shape. The...
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5807432 |
Process for producing diamond covered member
A diamond covered member which has a diamond crystal layer is formed by vapor phase synthesis on a surface of a substrate. The process comprises depositing plate-shaped diamond crystals by CVD at a...
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5688320 |
Process for manufacturing aluminum nitride whiskers
Aluminum nitride whiskers are produced by reducing alumina with carbon in a nitrogen atmosphere, at a temperature of 1800° to 2000° C., in the presence of a growth activator containing a solvent...
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5667585 |
Method for the preparation of wire-formed silicon crystal
Proposed is a low-cost method for the preparation of a wire-formed crystal of silicon having a diameter of 1 mm or smaller, in which a vertically held starting rod of silicon is melted at one end...
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5620511 |
Method for preparing a preform for a composite material
Disclosed in this invention is a method of preparing a whisker-preform comprising the steps of (a) uniformly dispersing a mixture of silicon microparticles and carbon fibers in the ratio of 4:1 to...
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5479873 |
Method of manufacturing aluminum borate whiskers having a reformed surface based upon gamma alumina
Aluminium borate whiskers by which a composite material having a higher strength than ever is available by definitely suppressing a generation of spinel along the surface of the whiskers are...
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5431965 |
Coreless refractory fibers
A coreless refractory fiber is made by introducing a filament (16) of a starting material into a chemical vapor deposition (CVD) enclosure (10) and then heating the end (21) of the filament by...
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5404836 |
Method and apparatus for continuous controlled production of single crystal whiskers
Described herein is a method and apparatus for continuously growing single crystal whiskers of silicon carbide, silicon nitride, boron carbide and boron nitride by the VLS process under controlled...
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5330612 |
Method of fabricating nano-size thin wires and devices made of such thin wires
A single-crystal substrate is prepared which has the (100) crystal plane with a step line formed therein by cleaving an MgO single crystal. By evaporating metal onto the cleavage plane, with a mask...
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5256243 |
Process for producing titanium carbide whisker
A process for producing a titanium carbide whisker, comprising the steps of: mixing 100 parts by weight of a titanium source comprising titanium dioxide and/or an alkali metal titanate with 50 to...
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5238526 |
Method of forming charge transfer complexes
A charge transfer complex of donor and acceptor molecules is formed through a vapor phase reaction. After the formation, the complex is subjected to thermal annealing in order to optimize the...
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5229093 |
Method for making mullite whiskers using hydrofluoric acid
A method for making mullite whiskers includes the steps of: preparing a mullite-intensive sol by mixing an alumina sol with a silica sol at a molar Al 2 O 3 /SiO 2 ratio of 1.37-1.76, ...
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5160574 |
Process for production of small diameter titanium carbide whiskers
A method of producing small diameter titanium carbide whiskers is disclosed. The method comprises supplying a source of materials comprised of titanium halide, hydrocarbon gas and nickel and...
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