Patents in Class 117/86

Matches 1 - 50 out of 164

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Match	Document	Document Title
1	7621998	Single crystalline gallium nitride thick film having reduced bending deformation The present invention relates to a freestanding, thick, single crystalline gallium nitride (GaN) film having significantly reduced bending deformation. The inventive GaN film having a crystal tilt...
2	7604697	Heteroepitaxial growth method for gallium nitride A heteroepitaxial growth method for gallium nitride yields gallium nitride which contains good quality fine crystals and has excellent optical properties, on a quartz substrate or a silicon...
3	7597757	ZnO film with C-axis orientation A ZnO film with a C-axis preference is provided with a corresponding fabrication method. The method includes: forming a substrate; forming an amorphous Al 2 O 3 film overlying the substrate; and,...
4	7582161	Atomic layer deposited titanium-doped indium oxide films An apparatus and methods of forming the apparatus include a film of transparent conductive titanium-doped indium oxide for use in a variety of configurations and systems. The film of transparent...
5	7572331	Method of manufacturing a wafer The present invention relates to a method of manufacturing a wafer comprising a single crystalline bulk substrate of a first material and at least one epitaxial layer of a second material which has...
6	7563321	Process for producing high quality large size silicon carbide crystals The invention is an improvement in the method of producing a high quality bulk single crystal of silicon carbide in a seeded sublimation system. In a first embodiment, the improvement comprises...
7	7553368	Process for manufacturing a gallium rich gallium nitride film A process for the manufacture of a gallium rich gallium nitride film is described. The process comprises (a) preparing a reaction mixture containing a gallium species and a nitrogen species, the...
8	7540918	Atomic layer deposition equipment and method An ALD (Atomic Layer Deposition) apparatus includes a chamber with a sample seated in the reaction space, a supply line providing a raw material gas, an exhaust line through which a reaction gas is...
9	7524370	Nanostructure and manufacturing method for same The invention relates to nanostructure and its manufacturing method. In the manufacturing method of a nanostructure, first anisotropic crystalline particles, connectors having an end to be...
10	7507293	Photonic crystals with nanowire-based fabrication Fabrication of a photonic crystal is described. A patterned array of nanowires is formed, the nanowires extending outward from a surface, the nanowires comprising a catalytically grown nanowire...
11	7498060	Method for controlling at nanometric scale the growth of thin films of conjugated organic molecules The invention provides a method of controlling the spatial distribution, shape and size of films of conjugated organic molecules that can be used to grow single layers of organic molecules on...
12	7497905	Ternary nitride-based buffer layer of a nitride-based light-emitting device and a method for manufacturing the same Ternary nitride-based buffer layer of a nitride-based light-emitting device and related manufacturing method. The device includes a substrate and a plurality of layers formed over the substrate in...
13	7473315	Al_xIn_yGa_1-x-yN mixture crystal substrate, method of growing Al_xIn_yGa_1-x-yN mixture crystal substrate and method of producing Al_xIn_yGa_1-x-yN mixture crystal substrate A low dislocation density Al x In y Ga 1-x-y N single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing an...
14	7462239	Low temperature load and bake Methods are provided for low temperature, rapid baking to remove impurities from a semiconductor surface prior to in-situ deposition. Advantageously, a short, low temperature process consumes very...
15	7459024	Method of forming an N-type doped single crystal diamond Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased...
16	7445671	Formation of metal oxide nanowire networks (nanowebs) of low-melting metals A method of producing networks of low melting metal oxides such as crystalline gallium oxide comprised of one-dimensional nanostructures. Because of the unique arrangement of wires, these...
17	7427556	Method to planarize and reduce defect density of silicon germanium A method for blanket depositing a SiGe film comprises intermixing a silicon source, a germanium source and an etchant to form a gaseous precursor mixture. The method further comprises flowing the...
18	7402207	Method and apparatus for controlling the thickness of a selective epitaxial growth layer Methods and systems for permitting thickness control of the selective epitaxial growth (SEG) layer in a semiconductor manufacturing process, for example raised source/drain applications in CMOS...
19	7399356	Method for preparation of ferroelectric single crystal film structure using deposition method A film structure of a ferroelectric single crystal which can be beneficially used in the fabrication of high-performance electric and electronic parts and devices is prepared by forming an...
20	7396410	Featuring forming methods to reduce stacking fault nucleation sites Epitaxial silicon carbide layers are fabricated by forming features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The features...
21	7377977	High-purity crystal growth A method of growing a crystal on a substrate disposed in a reactor, that provides a reactor chamber in which the substrate is disposed, includes flowing reactive gases inside the reactor chamber...
22	7377976	Method for growing thin oxide films A method is provided for growing thin oxide films on the surface of a substrate by alternatively reacting the surface of the substrate with a metal source material and an oxygen source material....
23	7368014	Variable temperature deposition methods A deposition method may include, at a first temperature, contacting a substrate with a first precursor and chemisorbing a first layer at least one monolayer thick over the substrate. At a second...
24	7338554	Method of synthesising and growing nanorods from a metal carbide on a substrate, substrates thus obtained and applications thereof The invention relates to a process for synthesizing nanorods of a carbide of one metal M 1 on a substrate, which comprises: a) the deposition, on the substrate, of a layer of nanocrystals...
25	7332030	Method of treating a part in order to alter at least one of the properties thereof Process for the treatment of a component, at least one zone to be treated of which located in the depth of this component at a certain distance from the surface thereof, has at least one property...
26	7326293	Patterned atomic layer epitaxy A patterned layer is formed by removing nanoscale passivating particle from a first plurality of nanoscale structural particles or by adding nanoscale passivating particles to the first plurality...
27	7323050	Method of producing lithium tantalate crystal A method of producing a lithium-tantalate crystal, wherein at least a first material containing lithium tantalate, lithium niobate or hydrogen storage alloy storing hydrogen that is subjected to a...
28	7316747	Seeded single crystal silicon carbide growth and resulting crystals A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system and in the absence of a solid silicon carbide source, by reducing the separation...
29	7311775	Method for heat-treating silicon wafer and silicon wafer This method for heat-treating a silicon wafer includes: a step of subjecting a silicon wafer to a high-temperature heat treatment in an ambient gas atmosphere of hydrogen gas, argon gas or a...
30	7306674	Nucleation of diamond films using higher diamondoids Novel uses of higher diamondoids are disclosed. Specifically, higher diamondoids may be used to nucleate diamond films and diamond-like carbon films. Such higher diamondoids include...
31	7303629	Apparatus for pulling single crystal An apparatus for pulling single crystal comprises a quartz crucible provided in a chamber for storing raw melt of a single crystal, a heater that heats the raw melt of the single crystal, and a...
32	7303628	Nanocrystals with linear and branched topology Disclosed herein are nanostructures comprising distinct dots and rods coupled through potential barriers of tuneable height and width, and arranged in three dimensional space at well defined angles...
33	7294200	Method for producing nitride semiconductor crystal, and nitride semiconductor wafer and nitride semiconductor device A method for producing a nitride semiconductor crystal comprising steps (a), (b) and (c), which steps follow in sequence as follows: a step (a) for forming fine crystal particles made of a nitride...
34	7258742	Method of manufacturing potassium niobate single crystal thin film, surface acoustic wave element, frequency filter, frequency oscillator, electronic circuit, and electronic apparatus A method of manufacturing KNbO 3 single crystal thin film having single-phase high quality and excellent morphology on each of single crystal substrates. A surface acoustic wave element, frequency...
35	7258741	System and method for producing synthetic diamond Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased...
36	7255743	Method of making synthetic gems comprising elements recovered from remains of a species of the kingdom animalia This invention is a method of making a synthetic gem comprising elements recovered from remains of a species of the Kingdom Animalia, comprising the steps of collecting substantially pure carbon...
37	7235129	Substrate having a zinc oxide nanowire array normal to its surface and fabrication method thereof A method for forming an array of zinc oxide nanowires on a substrate is disclosed, which includes forming a crystal phase adjusting buffer on the surface of the substrate and growing 1D zinc oxide...
38	7211144	Pulsed nucleation deposition of tungsten layers A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing...
39	7201886	Single crystal diamond tool Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased...
40	7192483	Method for diamond coating substrates The present invention relates to a method for diamond coating of substrates in which the substrate is exposed in a vacuum atmosphere to a reactive gas mixture excited by means of a plasma...
41	7189287	Atomic layer deposition using electron bombardment Formation of a layer of material on a surface by atomic layer deposition methods and systems includes using electron bombardment of the chemisorbed precursor.
42	7179667	Semiconductor base material and method of manufacturing the material As shown in FIG. 1 ( a ), substrate 1 having a growth plane having a concavo-convex surface is used. When GaN group crystal is vapor phase grown using this substrate, the concavo-convex shape...
43	7175709	Epitaxy layer and method of forming the same A method of forming an epitaxial layer of uniform thickness is provided to improve surface flatness. A substrate is first provided and a Si base layer is then formed on the substrate by epitaxy. A...
44	7153362	System and method for real time deposition process control based on resulting product detection A system and method for real time deposition process control based on resulting product detection, where the system and method detect an amount of at least one reaction product in real time, while...
45	7135073	Method and system for semiconductor crystal production with temperature management What is described here is a method and a temperature management and reaction chamber system for the production of nitrogenous semiconductor crystal materials of the form A X B Y C Z N V M W ,...
46	7135071	Fractal structure and method of forming it A fractal structure is formed to have a plurality of regions different in fractal dimension characterizing the self-similarity. The fractal structure is grown from one or more origins under growth...
47	7115166	Systems and methods for forming strontium- and/or barium-containing layers A method of forming (and apparatus for forming) a layer, such as a strontium titanate, barium titanate, or barium-strontium titanate layer, on a substrate by employing a vapor deposition method,...
48	7112242	Manufacturing method for producing silicon carbide crystal using source gases A crucible, which has first member and second cylindrical body, is disposed in a lower chamber. A pedestal is disposed inside the first member, and a seed crystal is fixed to the pedestal. A second...
49	7101434	Fractal structure and its forming method A fractal structure is formed to have a plurality of regions different in fractal dimension characterizing the self-similarity. Especially in a stellar fractal structure, a region with a low...
50	7094288	Method for producing a positively doped semiconductor with large forbidden band A method of producing a p doped wide bandgap semiconductor including growing a semiconductor in the presence of an element apt acting as a surfactant at a growth surface of the semiconductor and...

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