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8980000 Density-matching alkyl push flow for vertical flow rotating disk reactors  
In a rotating disk reactor for growing epitaxial layers on substrate or other CVD reactor system, gas directed toward the substrates at gas inlets at different radial distances from the axis of...
8940093 Method of controlling an epitaxial growth process in an epitaxial reactor  
A method of controlling an epitaxial growth process in an epitaxial reactor. The method includes optimizing the thermocouple offset parameter for a second run by setting up a modeled output...
8663389 Method and apparatus for crystal growth using a membrane-assisted semi-closed reactor  
A method and apparatus for depositing III-V material is provided. The apparatus includes a reactor partially enclosed by a selectively permeable membrane 12. A means is provided for generating...
8658118 High purity crystalline silicon, high purity silicon tetrachloride for processes for producing the same  
An object of the present invention is to provide more inexpensive high purity crystalline silicon which can satisfy not only a quality required to a raw material of silicon for a solar cell but...
8603243 Tracking carbon to silicon ratio in situ during silicon carbide growth  
A method of: supplying sources of carbon and silicon into a chemical vapor deposition chamber; collecting exhaust gases from the chamber; performing mass spectrometry on the exhaust gases; and...
8586488 Configuring radiation sources to simultaneously irradiate a substrate  
A computer program product and system for configuring J electromagnetic radiation sources (J≧2) to simultaneously irradiate a substrate. Each source has a different function of wavelength and...
8585822 Method for testing group III-nitride wafers and group III-nitride wafers with test data  
The present invention discloses a new testing method of group III-nitride wafers. By utilizing the ammonothermal method, GaN or other Group III-nitride wafers can be obtained by slicing the bulk...
8557043 Method for testing group III-nitride wafers and group III-nitride wafers with test data  
The present invention discloses a new testing method of group III-nitride wafers. By utilizing the ammonothermal method, GaN or other Group III-nitride wafers can be obtained by slicing the bulk...
8551246 Method for evaluating oxide dielectric breakdown voltage of a silicon single crystal wafer  
A method for manufacturing a silicon single crystal wafer, having at least: a step of preparing a silicon single crystal ingot; a step of slicing the silicon single crystal ingot to fabricate a...
8475593 Crystal preparing device, crystal preparing method, and crystal  
In a crystal preparing device, a crucible holds a mixed molten metal containing alkali metal and group III metal. A container has a container space contacting the mixed molten metal and holds a...
8454748 Method of calculating carrier mobility  
A calculation method for finding the hole mobility or the electron mobility of an organic film. The method includes the steps of: calculating the electron density of a film using semi-empirical...
8430959 Apparatus and methods for preparation of high-purity silicon rods using mixed core means  
Disclosed are a method and an apparatus for preparing a polycrystalline silicon rod using a mixed core means, comprising: installing a first core means made of a resistive material together with a...
8409349 Film thickness measurement method, epitaxial wafer production process and epitaxial wafer  
A film thickness measurement method for measuring a change in film thickness of 0.3 μm or less in a silicon wafer by FTIR, having an auxiliary film formation step for depositing an auxiliary film...
8394197 Corrosion-resistant internal coating method using a germanium-containing precursor and hollow cathode techniques  
Enhanced corrosion resistance is achieved in a coating by using a germanium-containing precursor and hollow cathode techniques to form a first layer directly on the surface of a workpiece, prior...
8394196 Formation of in-situ phosphorus doped epitaxial layer containing silicon and carbon  
Methods for formation epitaxial layers containing silicon and carbon doped with phosphorus are disclosed. The pressure is maintained equal to or above 100 torr during deposition. The methods...
8372197 Substrate temperature accuracy and temperature control flexibility in a molecular beam epitaxy system  
A control system and method for controlling temperatures while performing a MBE deposition process, wherein the control system comprises a MBE growth structure; a heater adapted to provide heat...
8357243 Method for testing group III-nitride wafers and group III-nitride wafers with test data  
The present invention discloses a new testing method of group III-nitride wafers. By utilizing the ammonothermal method, GaN or other Group III-nitride wafers can be obtained by slicing the bulk...
8354618 Load chamber with dual heaters  
A disk processing system with a load chamber having a stationary heater and a movable heater.
8216364 System and method for low-power nanotube growth using direct resistive heating  
Direct resistive heating is used to grow nanotubes out of carbon and other materials. A growth-initiated array of nanotubes is provided using a CVD or ion implantation process. These processes use...
8163085 Method and apparatus for forming protective layer  
An apparatus for forming a protective layer of magnesium oxide on a front glass substrate (11) in an evaporation chamber (201) includes the following: oxygen outlet openings (222) for introducing...
8163573 Method for manufacturing nitride semiconductor element  
InyGa1-yN (0
8101020 Crystal growth apparatus and manufacturing method of group III nitride crystal  
A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal, a gas supplying apparatus supplying a nitrogen source gas to a...
8052794 Directed reagents to improve material uniformity  
A method for locally controlling the stoichiometry of an epitaxially deposited layer on a semiconductor substrate is provided. The method includes directing a first reactant gas and a doping gas...
8029620 Methods of forming carbon-containing silicon epitaxial layers  
In a first aspect, a method is provided for forming an epitaxial layer stack on a substrate. The method includes (1) selecting a target carbon concentration for the epitaxial layer stack; (2)...
8025728 Method for manufacturing single crystal of nitride  
A seed crystal is immersed in a melt containing a flux and a single crystal material in a growth vessel to produce a nitride single crystal on the seed crystal. A difference (TS-TB) of...
7922814 Production process for high purity polycrystal silicon and production apparatus for the same  
In the production process of the present invention for high purity polycrystal silicon, using a vertical reactor having a silicon chloride gas-feeding nozzle and a reducing agent gas-feeding...
7846499 Method of pulsing vapor precursors in an ALD reactor  
A method of growing a thin film on a substrate by pulsing vapor-phase precursors material into a reaction chamber according to the ALD method. The method comprises vaporizing at least one...
7820246 Method for growing thin nitride film onto substrate and thin nitride film device  
The present invention provides a method for growing a thin nitride film over a substrate and a thin nitride film device, in which the polarity of the thin nitride film can be controlled by a low...
7790636 Simultaneous irradiation of a substrate by multiple radiation sources  
A method for configuring J electromagnetic radiation sources (J≧2) to simultaneously irradiate a substrate. Each source has a different function of wavelength and angular distribution of emitted...
7785414 Process for manufacturing wafer of silicon carbide single crystal  
A process for manufacturing a wafer of a silicon carbide single crystal having: cutting a wafer from an α (hexagonal)-silicon carbide single crystal so that the off-angle is totally in the range...
7776152 Method for continuous, in situ evaluation of entire wafers for macroscopic features during epitaxial growth  
Apparatus and method for growing and observing the growth of epitaxial layers on a wafer. The apparatus includes: epitaxial growth apparatus; a source of light mounted to illuminate an entire...
7771532 Nitride semiconductor substrate and method of producing same  
A nitride semiconductor crystal substrate is produced by forming a network mask repeating a closed loop unit shape upon an undersubstrate, growing a nitride semiconductor crystal in vapor phase,...
7754013 Apparatus and method for atomic layer deposition on substrates  
A deposition station allows atomic layer deposition (ALD) of films onto a substrate. The station comprises an upper and a lower substantially flat part between which a substrate is accommodated....
7745854 Substrate for growing compound semiconductor and epitaxial growth method  
It is to provide a substrate for growing a semiconductor, which is effective for suppressing an occurrence of surface defects different in type from hillock defects in case of epitaxially growing...
7731796 Nitrogen semiconductor compound and device fabricated using the same  
Disclosed herein are a novel nitrogen semiconductor compound simultaneously including groups with different electrical properties and a device fabricated using the nitrogen semiconductor compound...
7713352 Synthesis of fibers of inorganic materials using low-melting metals  
A process is provided to produce bulk quantities of nanowires in a variety of semiconductor materials. Thin films and droplets of low-melting metals such as gallium, indium, bismuth, and aluminum...
7708832 Method for preparing substrate for growing gallium nitride and method for preparing gallium nitride substrate  
Provided is a method for preparing a substrate for growing gallium nitride and a gallium nitride substrate. The method includes performing thermal cleaning on a surface of a silicon substrate,...
7641988 Self-supported nitride semiconductor substrate and its production method, and light-emitting nitride semiconductor device using it  
A self-supported nitride semiconductor substrate of 10 mm or more in diameter having an X-ray diffraction half width of 500 seconds or less in at least one of a {20-24} diffraction plane and a...
7621998 Single crystalline gallium nitride thick film having reduced bending deformation  
The present invention relates to a freestanding, thick, single crystalline gallium nitride (GaN) film having significantly reduced bending deformation. The inventive GaN film having a crystal tilt...
7591897 Method for the rapid synthesis of large quantities of metal oxide nanowires at low temperatures  
A process for the rapid synthesis of metal oxide nanoparticles at low temperatures and methods which facilitate the fabrication of long metal oxide nanowires. The method is based on treatment of...
7563321 Process for producing high quality large size silicon carbide crystals  
The invention is an improvement in the method of producing a high quality bulk single crystal of silicon carbide in a seeded sublimation system. In a first embodiment, the improvement comprises...
7524376 Method and apparatus for aluminum nitride monocrystal boule growth  
A crystal growth setup within a physical vapor transport growth furnace system for producing AlN monocrystal boules at high temperatures includes a crucible effective to contain an AlN source...
7473315 AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyGa1-x-yN mixture crystal substrate and method of producing AlxInyGa1-x-yN mixture crystal substrate  
A low dislocation density AlxInyGa1-x-yN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing an...
7449064 Method for producing AlN single crystal and AlN single crystal  
An AlN single crystal is grown by pressurizing a melt including at least gallium, aluminum and sodium in an atmosphere containing nitrogen. Preferably, the AlN single crystal is grown under a...
7445671 Formation of metal oxide nanowire networks (nanowebs) of low-melting metals  
A method of producing networks of low melting metal oxides such as crystalline gallium oxide comprised of one-dimensional nanostructures. Because of the unique arrangement of wires, these...
7442355 Indium phosphide substrate and indium phosphide monocrystal and method of manufacturing thereof  
An indium phosphide substrate for semiconductor devices is obtained as follows. In order to have the direction of growth of the crystal in the <100> orientation, a seed crystal having a specified...
7402207 Method and apparatus for controlling the thickness of a selective epitaxial growth layer  
Methods and systems for permitting thickness control of the selective epitaxial growth (SEG) layer in a semiconductor manufacturing process, for example raised source/drain applications in CMOS...
7387678 GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same  
A GaN substrate comprises a GaN single crystal substrate, an AlxGa1-xN intermediate layer (0
7368014 Variable temperature deposition methods  
A deposition method may include, at a first temperature, contacting a substrate with a first precursor and chemisorbing a first layer at least one monolayer thick over the substrate. At a second...
7270707 Method for the preparation of diamond, graphite or their mixture  
The present invention provides a method of preparation for diamond, graphite or mixtures of diamond and graphite by reduction of CO or CO2. Said method comprises a step of contacting an active...

Matches 1 - 50 out of 144 1 2 3 >