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7621999 |
Method and apparatus for AlGan vapor phase growth
An epitaxial growing method in which a crystal of Al x Ga 1-x N wherein x is a desirable constituent ratio can be grown on an Si substrate or sapphire substrate according to the HVPE process....
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7621998 |
Single crystalline gallium nitride thick film having reduced bending deformation
The present invention relates to a freestanding, thick, single crystalline gallium nitride (GaN) film having significantly reduced bending deformation. The inventive GaN film having a crystal tilt...
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7615203 |
Single crystal diamond
A single crystal diamond grown by vapor phase synthesis, wherein when one main surface is irradiated with a linearly polarized light considered to be the synthesis of two mutually perpendicular...
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7615116 |
Method for producing silicon epitaxial wafer and silicon epitaxial wafer
In a vapor phase growth apparatus including a reaction chamber, a susceptor, a lift pin, an upper heating device, and a lower heating device, a heating ratio between the upper heating ratio and the...
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7611579 |
Systems and methods for synthesis of extended length nanostructures
A system for synthesizing nanostructures using chemical vapor deposition (CVD) is provided. The system includes a housing, a porous substrate within the housing, and on a downstream surface of the...
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7608539 |
ALD method and apparatus
A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low...
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7608147 |
Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them
A nanoengineered structure comprising an array of more than about 1000 nanowhiskers on a substrate in a predetermined spatial configuration, for use for example as a photonic band gap array,...
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7605083 |
Formation of composite tungsten films
Embodiments of the invention provide methods for depositing tungsten materials. In one embodiment, a method for forming a composite tungsten film is provided which includes positioning a substrate...
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7597757 |
ZnO film with C-axis orientation
A ZnO film with a C-axis preference is provided with a corresponding fabrication method. The method includes: forming a substrate; forming an amorphous Al 2 O 3 film overlying the substrate; and,...
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7594967 |
Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy
A semiconductor structure including a cap layer formed over a semiconductor substrate having a rough edge, which discourages formation of dislocation pile-up defects.
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7591897 |
Method for the rapid synthesis of large quantities of metal oxide nanowires at low temperatures
A process for the rapid synthesis of metal oxide nanoparticles at low temperatures and methods which facilitate the fabrication of long metal oxide nanowires. The method is based on treatment of...
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7572333 |
Method for manufacturing semiconductor device
A semiconductor manufacturing apparatus includes a hot plate which heats a sapphire substrate; a support table having a support plate disposed as being spaced away from the hot plate by a...
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7566364 |
Method of fabricating orientation-controlled single-crystalline wire and method of fabricating transistor having the same
Provided may be a method of fabricating nanowires and a method of fabricating a transistor having the same. The method may include: forming a template layer on a substrate, the template layer...
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7563321 |
Process for producing high quality large size silicon carbide crystals
The invention is an improvement in the method of producing a high quality bulk single crystal of silicon carbide in a seeded sublimation system. In a first embodiment, the improvement comprises...
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7556688 |
Method for achieving low defect density AlGaN single crystal boules
A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic...
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7553373 |
Silicon carbide single crystal and production thereof
A method of producing a silicon carbide single crystal, having:
fixing a seed crystal, including setting a seed crystal on a seed crystal fixing part with interposition of an adhesive;...
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7553372 |
Method of growing semiconductor crystal
SiC is a very stable substance, and it is difficult to control the condition of a SiC surface to be suitable for crystal growth in conventional Group III nitride crystal growing apparatuses. This...
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7553370 |
Crystal growth method for nitride semiconductor and formation method for semiconductor device
Methods of crystal growth for semiconductor materials, such as nitride semiconductors, and methods of manufacturing semiconductor devices are provided. The method of crystal growth includes forming...
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7547360 |
Reduction of carbon inclusions in sublimation grown SiC single crystals
In a method of SiC single crystal growth, a SiC single crystal seed and polycrystalline SiC source material are provided in spaced relation inside of a graphite growth crucible along with at least...
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7544398 |
Controlled nano-doping of ultra thin films
The invention relates to methods for producing doped thin layers on substrates comprising the steps of depositing a dopant precursor on the substrate via an atomic layer deposition technique; and...
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7544249 |
Large-diameter SiC wafer and manufacturing method thereof
From the viewpoint of manufacturing an SiC semiconductor device economically, a present Si device manufacturing line is utilized to make it possible to handle a small-diameter SiC wafer....
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7534412 |
Large-volume CaF2 single crystals with reduced scattering and improved laser stability, and uses thereof
Single crystals with low scattering, small refractive index differences and few small angle grain boundaries have a bi-directional scattering distribution function value (BSDF) of less than 1.5*10...
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7527983 |
Ferromagnetic material
A method is provided for producing a doped dilute ferromagnetic semiconductor material, by doping Zinc Oxide in bulk form with manganese to a maximum level of 5 atomic percent concentration. The...
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7527869 |
Single crystal silicon carbide and method for producing the same
The invention is a high-temperature liquid phase growth method using a very thin Si melt layer and characterized in that there is no need of strict temperature difference control between the...
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7524376 |
Method and apparatus for aluminum nitride monocrystal boule growth
A crystal growth setup within a physical vapor transport growth furnace system for producing AlN monocrystal boules at high temperatures includes a crucible effective to contain an AlN source...
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7520930 |
Silicon carbide single crystal and a method for its production
A bulk silicon carbide single crystal of good crystalline quality which includes a minimized number of structural defects and is free from micropipe defects can be produced by crystal growth in a...
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7517775 |
Methods of selective deposition of heavily doped epitaxial SiGe
The invention generally teaches a method for depositing a silicon film or silicon germanium film on a substrate comprising placing the substrate within a process chamber and heating the substrate...
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7507288 |
Highly anisotropic ceramic thermal barrier coating materials and related composites
High temperature composites and thermal barrier coatings, and related methods, using anisotropic ceramic materials, such materials as can be modified to reduce substrate thermal mismatch.
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7501023 |
Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
A method and apparatus for growing low defect, optically transparent, colorless, crack-free, substantially flat, single crystal Group III nitride epitaxial layers with a thickness of at least 10...
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7501022 |
Methods of fabricating silicon carbide crystals
Methods for producing silicon carbide crystals, seed crystal holders and seed crystal for use in producing silicon carbide crystals and silicon carbide crystals are provided. Silicon carbide...
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7494545 |
Epitaxial deposition process and apparatus
An epitaxial deposition process including a dry etch process, followed by an epitaxial deposition process is disclosed. The dry etch process involves placing a substrate to be cleaned into a...
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7488385 |
Method for epitaxial growth of a gallium nitride film separated from its substrate
The invention concerns the preparation of gallium nitride films by epitaxy with reduced defect density levels. It concerns a method for producing a gallium nitride (GaN) film by epitaxial...
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7482037 |
Methods for forming niobium and/or vanadium containing layers using atomic layer deposition
A method of forming a metal containing layer on a substrate, particularly a semiconductor substrate or substrate assembly for use in manufacturing a semiconductor or memory device structure, using...
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7481881 |
Method of manufacturing GaN crystal substrate
Affords a method of manufacturing GaN crystal substrate in which enlargement of pit size in the growing of GaN crystal is inhibited to enable GaN crystal substrate with a high substrate-acquisition...
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7476487 |
Photosensitive semiconductor nanocrystals, photosensitive composition comprising semiconductor nanocrystals and method for forming semiconductor nanocrystal pattern using the same
Semiconductor nanocrystals surface-coordinated with a compound containing a photosensitive functional group, a photosensitive composition comprising semiconductor nanocrystals, and a method for...
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7473315 |
AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyGa1-x-yN mixture crystal substrate and method of producing AlxInyGa1-x-yN mixture crystal substrate
A low dislocation density Al x In y Ga 1-x-y N single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing an...
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7465354 |
Patterned ferroelectric thin films for microwave devices
A process, for patterning a thin film that is highly resistant to conventional etching processes and that is to be deposited at a high substrate temperature, is disclosed. The process uses a...
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7465353 |
Method for growing epitaxial crystal
It is to provide a method for growing an epitaxial crystal in which the doping conditions are set when an epitaxial crystal having a desired carrier concentration is grown. A method for growing an...
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7459024 |
Method of forming an N-type doped single crystal diamond
Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased...
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7455730 |
Method for growth of silicon carbide single crystal, silicon carbide seed crystal, and silicon carbide single crystal
A method for producing a single crystal includes supplying a vapor gas from silicon carbide as a raw material to a seed crystal formed of a silicon carbide single crystal to grow the seed crystal....
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7455729 |
Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density
The invention concerns a method for preparing gallium nitride films by vapour-phase epitaxy with low defect densities. The invention concerns a method for producing a gallium nitride (GaN) film...
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7449065 |
Method for the growth of large low-defect single crystals
A method and the benefits resulting from the product thereof are disclosed for the growth of large, low-defect single-crystals of tetrahedrally-bonded crystal materials. The process utilizes a...
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7445672 |
Method of forming group-III nitride crystal, layered structure and epitaxial substrate
Heat treatment is conducted at a predetermined temperature of not less than 1250° C. on an underlying substrate obtained by epitaxially forming a first group-III nitride crystal on a predetermined...
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7445671 |
Formation of metal oxide nanowire networks (nanowebs) of low-melting metals
A method of producing networks of low melting metal oxides such as crystalline gallium oxide comprised of one-dimensional nanostructures. Because of the unique arrangement of wires, these...
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7442253 |
Process for forming low defect density, ideal oxygen precipitating silicon
The present invention is directed to a process for producing a silicon wafer which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, may form...
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7438761 |
Apparatus for fabricating a III-V nitride film and a method for fabricating the same
A hydrogen chloride gas and an ammonia gas are introduced with a carrier gas into a reactor in which a substrate and at least an aluminum metallic material through conduits. Then, the hydrogen gas...
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7435297 |
Molten-salt-based growth of group III nitrides
A method for growing Group III nitride materials using a molten halide salt as a solvent to solubilize the Group-III ions and nitride ions that react to form the Group III nitride material. The...
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7419888 |
Method of forming a silicon-rich nanocrystalline structure by an atomic layer deposition process and method of manufacturing a non-volatile semiconductor device using the same
In a method of forming a silicon-rich nanocrystalline structure by an ALD process, a first gas including a first silicon compound is provided onto an object to form a silicon-rich chemisorption...
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7416604 |
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement...
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7410923 |
SiC material, semiconductor device fabricating system and SiC material forming method
A highly corrosion-resistant SiC material is formed on a base body by a CVD process. The SiC material contains β-SiC crystals so oriented that the ratio of the sum of peak intensities of x-ray...
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