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8157912 Method of converting PCA to sapphire and converted article  
Polycrystalline alumina (PCA) that has been doped with magnesium oxide is converted to sapphire by additionally doping the PCA with boron oxide and sintering to induce abnormal grain growth. The...
8118932 Technique for monitoring dynamic processes in metal lines of microstructures  
By locally heating specific scan positions within a region of interest and automatically obtaining respective measurement data in a time-resolved and spatially-resolved fashion, dynamic processes...
8119546 Array substrate, method of manufacturing the same and method of crystallizing silicon  
An array substrate includes a base substrate, a switching element, and a pixel electrode. The switching element is on the base substrate. The switching element includes a poly silicon pattern...
8114217 Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus  
There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized...
8105435 Beam homogenizer and laser irradiation apparatus and method of manufacturing semiconductor device  
The inhomogeneous energy distribution at the beam spot on the irradiated surface is caused by a structural problem and processing accuracy of the cylindrical lens array forming an optical system....
8101018 Method for fabricating a semiconductor device and apparatus for inspecting a semiconductor  
In a method for fabricating a semiconductor device and an apparatus for inspecting a semiconductor, laser processing is performed at different laser powers at different positions on a monitor...
8088219 Monocrystalline semiconductor wafer comprising defect-reduced regions and method for producing it  
Monocrystalline semiconductor wafers have defect-reduced regions, the defect-reduced regions having a density of GOI-relevant defects within the range of 0/cm2 to 0.1/cm2 and occupy overall an...
8052789 Polycrystalline silicon and crystallization method thereof  
Disclosed are a polycrystalline silicon and a crystallization method thereof according to an exemplary embodiment of the present invention. The polycrystalline silicon comprises: an insulating...
8052791 Crystallization apparatus, crystallization method, phase modulation element, device and display apparatus  
A phase modulation element according to the present invention has a first area having a first phase value based on a phase modulation unit having a predetermined size and a second area having a...
8052790 Mask for silicon crystallization, method of forming poly-silicon thin film, and manufacturing method of thin film transistor  
A silicon crystallization mask of the present invention includes; a main exposure portion including a plurality of complete light transmission regions which completely transmit light therethrough,...
8048220 Method for producing a strained layer on a substrate and layered structure  
The invention relates to a method for producing a strained layer. Said method comprises the following steps: placing the layer on a substrate and straining it, structuring the strained layer,...
8016940 Processing method for organic crystal, processing device for organic crystal, and observing device for organic crystal  
The short-pulse laser light 9 emitted from the short-pulse laser light source 1 is focused on and caused to irradiate an organic crystal 8 contained in a sample container 6 via a shutter 2,...
7985294 Optical device and method of manufacturing the same  
An optical device and a method of manufacturing the optical device, with the method including the steps of forming a dopant layer on a stoichiometric lithium niobate single crystal substrate with...
7981212 Flash lamp annealing device  
A flash lamp annealing device comprises a heater plate, a loader, a lamp set and a control circuit. The heater plate heats a wafer to a predetermined temperature. The wafer is loaded on the loader...
7967910 Fine structure body, process for producing the same, and Raman spectroscopic method and apparatus  
A fine structure body comprises: (i) a base body, and (ii) a plurality of metal nanorods, which have been distributed and located on a surface of the base body, a proportion X being equal to at...
7955432 Phase modulation device, phase modulation device fabrication method, crystallization apparatus, and crystallization method  
A phase shifter which modulates the phase of incident light has a light-transmitting substrate such as a glass substrate, and a phase modulator such as a concavity and convexity pattern which is...
7942965 Method of fabricating plasma reactor parts  
A method of fabricating silicon parts are provided herein. The method includes growing a silicon sample, machining the sample to form a part, and annealing the part by exposing the part...
7935617 Method to stabilize carbon in Si1-x-yGexCy layers  
A method of providing a layer in a semiconductor device, wherein the layer includes Si1-x-yGexCy, and wherein the carbon in the layer is in a stable condition, includes preparing a silicon...
7927421 Light irradiation apparatus, light irradiation method, crystallization apparatus, crystallization method, and semiconductor device  
A light irradiation apparatus irradiates a target plane with light having a predetermined light intensity distribution. The apparatus includes a light modulation element having a light modulation...
7919366 Laser crystallization method for amorphous semiconductor thin film  
A laser crystallization method in which an amorphous silicon thin film 2 formed on a substrate 1 is irradiated with a laser beam, the method including the steps of providing the amorphous silicon...
7887632 Process for producing monocrystal thin film and monocrystal thin film device  
The present invention provides a method for manufacturing a monocrystalline film and a device formed by the above method, and according to the method mentioned above, lift-off of the...
7879657 Semiconductor device and manufacturing method thereof  
An insulating film layer is formed between a channel region of an MOS element formed in a monocrystal silicon layer of an SOS substrate in which the monocrystal silicon layer is laminated on a...
7875116 Silicon single crystal producing method, annealed wafer, and method of producing annealed wafer  
A method in which SSDs are reliably reduced while reducing void defects other than the SSDs on a wafer surface, which is essential for an annealed wafer, and ensuring that BMDs serving as gettering...
7837790 Formation and treatment of epitaxial layer containing silicon and carbon  
Methods and apparatus for formation and treatment of epitaxial layers containing silicon and carbon are disclosed. Treatment of the epitaxial layer converts interstitial carbon to substitutional...
7828893 Silicon wafer and process for the heat treatment of a silicon wafer  
A silicon wafer having no epitaxially deposited layer or layer produced by joining to the silicon wafer, with a nitrogen concentration of 1·1013-8·1014 atoms/cm3, an oxygen concentration of 5...
7828894 Method for crystallizing silicon using a ramp shaped laser beam  
A crystallization method, includes: forming an amorphous silicon layer on a substrate; forming a first crystallization region by irradiating the amorphous silicon layer with a laser beam having a...
7799158 Method for producing crystallographically-oriented ceramic  
A method for producing a crystallographically-oriented ceramic includes the steps of forming a first sheet with a thickness of 10 μm or less containing a first inorganic material in which grain ...
7790636 Simultaneous irradiation of a substrate by multiple radiation sources  
A method for configuring J electromagnetic radiation sources (J≧2) to simultaneously irradiate a substrate. Each source has a different function of wavelength and angular distribution of emitted r...
7785659 Method of manufacturing an orientation film using aerosol deposition on a seed substrate  
A method of manufacturing an orientation film which method is suitable for manufacturing an orientation film containing a ceramic at low cost. The method includes the steps of: (a) forming a...
7776151 Method and apparatus for forming crystalline portions of semiconductor film  
A crystallization method which generates a crystallized semiconductor film by irradiating at least one of a polycrystal semiconductor film and an amorphous semiconductor film with light beams...
7758695 Method for fabricating metal substrates with high-quality surfaces  
One embodiment of the present invention provides a method for fabricating a high-quality metal substrate. During operation, the method involves cleaning a polished single-crystal substrate. A metal...
7749323 Single crystal for scintillator and method for manufacturing same  
A single crystal for a scintillator that is a specific single crystal of a cerium-activated orthosilicate compound that comprises 0.00005 to 0.1 wt. %, based on the entire weight of the single...
7666767 Mask for sequential lateral solidification (SLS) process and a method thereof  
A mask for sequential lateral solidification (SLS) process with at least one transparency region is provided. The transparent region is defined by two lengthwise edges, a front edge, and a rear...
7635412 Crystallizing silicon using a laser beam transmitted through a mask  
An laser crystallization device and a method for crystallizing silicon by using the same is disclosed, to carry out the crystallization process at both the X-axis and Y-axis directions without...
7629209 Methods for fabricating polysilicon film and thin film transistors  
A method for fabricating polysilicon film is disclosed. First, a first substrate is provided, wherein a plurality of sunken patterns has been formed on the front surface of the first substrate....
7608148 Crystallization apparatus and crystallization method  
A crystallization apparatus includes an illumination system which illuminates a phase shifter having a phase shift portion, and irradiates a polycrystal semiconductor film or an amorphous...
7608144 Pulse sequencing lateral growth method  
A process of lateral crystallization is provided for increasing the lateral growth length (LGL). A localized region of the substrate is heated for a short period of time. While the localized region...
7591894 LuAP scintillator  
An LuAP scintillation detector and a method for improving the light output and uniformity of an LuAP scintillator crystal is provided, wherein the method includes disposing the scintillator crystal...
7569109 Single crystal scintillator materials and methods for making the same  
A method of making a rare earth halide single crystal material is provided. The method includes providing a polycrystalline material having a plurality of grains. The method further includes adding...
7544244 Method of manufacturing ceramic film and structure including ceramic film  
A method of manufacturing a ceramic film by using an AD method, by which a film having good crystallinity can be fabricated without using a high-temperature process. The method of manufacturing a...
7520930 Silicon carbide single crystal and a method for its production  
A bulk silicon carbide single crystal of good crystalline quality which includes a minimized number of structural defects and is free from micropipe defects can be produced by crystal growth in a...
7507290 Flux assisted solid phase epitaxy  
A flux assisted solid phase epitaxy that can make a thin film having a crystalline perfection comparable with that of a bulk crystal and at a reduced cost is provided in which an amorphous film of...
7507289 Electroconductive 12CaO—7Al2O3 and compound of same type, and method for preparation thereof  
In a solid solution system of Al2O3 and CAO or SrO, it has been difficult to obtain a material having a high electrical conductivity (>10−4 S·cm−) at room temperature. A compound is provided in w...
7503975 Semiconductor device and fabrication method therefor  
In a crystalline silicon film fabricated by a related art method, the orientation planes of its crystal randomly exist and the orientation rate relative to a particular crystal orientation is low....
7488384 Direct pyrolysis route to GaN quantum dots  
Colloidal nanocrystals or “quantum dots” of GaN are directly produced by heating amidogallium dimer, i.e., (Ga2[N(CH3)2]6), in the presence of a functional amine. The GaN quantum dots obtained, whi...
7438759 Ambient environment nanowire sensor  
An ambient environment nanowire sensor and corresponding fabrication method have been provided. The method includes: forming a substrate such as Silicon (Si) or glass; growing nanowires; depositing...
7413604 Process for producing polysilicon film  
The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irradiation of a silicon film set on a...
7396712 Thin film processing method and thin processing apparatus  
A thin film processing method for processing the thin film by irradiating an optical beam to the thin film. A unit of the irradiation of the optical beam includes a first and a second optical pulse...
7384476 Method for crystallizing silicon  
A method for crystallizing silicon is provided. The method includes: forming an amorphous silicon layer on a substrate; aligning a mask above the substrate, the mask being divided into a plurality...
7357963 Apparatus and method of crystallizing amorphous silicon  
A sequential lateral solidification apparatus includes a laser generator for generating and emitting a laser beam; an X-Y stage movable in two orthogonal axial directions; and a mask arranged...
Matches 1 - 50 out of 221 1 2 3 4 5 >