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7422633 |
Method of forming gallium-containing nitride bulk single crystal on heterogeneous substrate
The present invention provides a process for forming a bulk monocrystalline gallium-containing nitride, i.e. GaN etc., on the surface of heterogeneous substrate, i.e. SiC etc., comprising the steps...
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7393409 |
Method for making large-volume CaF2 single cystals with reduced scattering and improved laser stability, the crystals made by the method and uses thereof
The method provides CaF 2 single crystals with low scattering, small refractive index differences and few small angle grain boundaries, which can be tempered at elevated temperatures. In the...
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7316746 |
Crystals for a semiconductor radiation detector and method for making the crystals
A method for a growing solid-state, spectrometer grade II-VI crystal using a high-pressure hydrothermal process including the following steps: positioning seed crystals in a growth zone of a...
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7306673 |
Furnace purification and metal fluoride crystal grown in a purified furnace
The invention is directed to a method for growing metal fluoride crystals suitable for use in below 200 nm optical lithography systems, the method comprising including at least the step of heating...
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7294199 |
Nitride single crystal and producing method thereof
A method of producing a nitride single crystal includes the step of forming a material transport medium layer containing a compound of rare earth element on a surface of a nitride crystal, and the...
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7288152 |
Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the same
The present invention provides a manufacturing method in which high quality GaN crystals and GaN crystal substrates can be manufactured under mild conditions of low pressure and low temperature. In...
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7267721 |
Method for preparing group IV nanocrystals with chemically accessible surfaces
Group IV nanocrystals, such as, for example, silicon nanocrysals and germanium nanocrystals, with chemically accessible surfaces are produced in solution reactions. Group IV halides can be reduced...
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7160388 |
Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed...
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7094441 |
Low temperature interconnection of nanoparticles
A polymeric linking agent enables the manufacture of photovoltaic cells on flexible substrates, including, for example, polymeric substrates. Photovoltaic cells may be fabricated by a relatively...
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7083678 |
Method and apparatus for making a crystal pre-melt
An apparatus for making a crystal pre-melt includes a hermetically-sealed muffle furnace made of a non-porous refractory material, at least one port for entry and exit of gaseous substance within...
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7063741 |
High pressure high temperature growth of crystalline group III metal nitrides
A method of forming at least one single crystal of a Group III metal nitride. The method includes the steps of: providing a flux material and a source material comprising at least one Group III...
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7001457 |
Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth...
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6984265 |
Three dimensional array films
The present invention provides nanoparticle film and methods of making such films. The nanoparticle film comprises a three dimensional cross-linked array of nanoparticles and linker molecules. The...
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6929694 |
Crystal manufacture method
A method for manufacturing fluoride crystal includes the steps of adding scavenger and a material to a crucible, melting the scavenger and material at a temperature higher than a melting point so...
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6673647 |
Method for growing a solid type II-VI semiconductor material
A growth method for a bulk II-VI type semiconductor material, including at least a first component and a second component. The method supplies in a crucible a charge including the components, with...
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6488769 |
Fluoride refining method and fluoride crystal manufacturing method, and optical part and aligner using same
In order to provide a fluoride refining method and a fluoride crystal manufacturing method that have great general-purpose properties and can reduce the manufacturing cost and to provide at a low...
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6488770 |
Monocrystalline powder and monograin membrane production
For production of monocrystalline powders there is formed a melt to which a fluxing agent is added. The melt contains the components of a semiconductor material, an example being the components of...
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6270569 |
Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method
A Group III metal element is heated so as to melt, a gas NH 3 containing nitrogen atoms is injected into a melt 3 of the Group III metal element at a temperature lower than the melting point of a...
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6238479 |
Raw material for manufacturing fluoride crystal, refining method of the same, fluoride crystal, manufacturing method of the same, and optical part
The present invention provides a raw material for manufacturing an inexpensive fluoride crystal with excellent optical characteristics, and a method of manufacturing a fluoride crystal using a...
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6203612 |
Process for cleaning bisphenol crystallizer
An alternative and improved method for cleaning cooling and/or crystallization surfaces of a crystallizer fouled with a crystallized bisphenol as a result of processing a slurry derived from the...
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6153125 |
BaM.sub.2 O.sub.4 oxide single crystal having non-linear optical property and manufacturing method thereof
An oxide single crystal having a nominal composition expressed BaM 2 O 4 (M is at least an element selected from the group consisting of Al and Ga), M of which is partially substituted with B, is...
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6123764 |
Manufacturing method for calcium fluoride crystal and processing method for calcium fluoride powder
A manufacturing method for a single crystal of calcium fluoride includes the steps of degassing calcium fluoride powder particles to desorb impurities from surfaces of the calcium fluoride powder...
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6096128 |
Silicon crystal, and device and method for manufacturing same
A germanium layer 19 is melted on top of a starting polycrystalline silicon ingot 18, at a temperature below the melting point of pure silicon. Silicon is dissolved at the interface and floats to...
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5962374 |
Preparation of oxide crystals
A process for preparing an oxide crystal by means of solution growth in the presence of a solvent is provided. The solvent includes a mixture of an oxide containing at least one member of those...
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5846319 |
Method and apparatus for formation of HgCdTe infrared detection layers employing isothermal crystal growth
A system and method for isothermally growing HgCdTe having improved material uniformity and run-to-run repeatability employs a growth solution vessel in which a substrate may be inserted. The...
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5788945 |
Method for refining of silicon
The present invention relates to a process for removing impurities from molten silicon by treatment of molten silicon contained in a vessel with a slag having the capability of removing the...
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5707879 |
Neutron detector based on semiconductor materials
A neutron radiation detector is described. A semiconductor material is populated with helium three ( 3 He) atoms to increase its overall neutron capture efficiency. Upon capture of a neutron by a ...
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5571776 |
Single crystalline bulk oxide superconductor and process for producing same
Enlargement of a crystal of a bulk oxide superconductor of REBa 2 Cu 3 O 7 -x, wherein RE is at least one of Y and rare earth elements, is effected by three dimensionally arranging layers of REBa...
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5562768 |
Potassium-lithium niobate crystals
The invention provides a method of manufacturing stoichiometric potassium-lithium niobate crystals. Such crystals exhibit a high degree of double refraction and can suitably be used to double the...
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5544615 |
Synthesis and growth processes for zinc germanium diphosphide single crystals
New single crystals of ZnGeP 2 are grown by a chemical vapor transport process from bulk synthesized polycrystalline ZnGeP 2 using the LEK process with a controlled injection of phosphorus. The...
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5504060 |
Method for harvesting rare earth barium copper oxide single crystals
A method of preparing high temperature superconductor single crystals. The method of preparation involves preparing precursor materials of a particular composition, heating the precursor material...
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5500390 |
Method for control of Si concentration in gallium phosphide single crystal layer by liquid phase epitaxial growth technique
A method for controlling the Si concentration in a GaP single crystal layer grown in a series of runs of GaP liquid phase epitaxial growth with the repeated use of one and the same Ga solution,...
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5493984 |
Terbium aluminate and method for its production
A method for producing a single crystal or polycrystal of terbium aluminate containing at least terbium, aluminum and oxygen and represented by the formula Tb 1 -x Al 1 +x O 3 wherein...
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5471938 |
Process for growing multielement compound single crystal
A process for growing a multielement compound single crystal, includes the steps of placing a crucible holding a raw multielement compound of a predetermined set of composition ratios Y in a...
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5296085 |
Macrocrystalline α-alumina hexagonal platelets
Macrocrystalline α-alumina hexagonal platelets, well adapted as reinforcing materials and polishing agents, are prepared by calcining admixture of transition or hydrated alumina and a...
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5215631 |
Electrolytic preparation of tin, other metals, alloys and compounds
Electrolytic processes for the growth of crystalline tin or other elemental crystals, with or without the use of a substrate. Exemplified cubic forms of alpha-tin and tetragonal forms of beta-tin...
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5178719 |
Continuous refill crystal growth method
Large crystals of alkali halide materials are presently produced using the Bridgman-Stockbarger method and result in state-of-the-art crystals of up to 30" in diameter and 20" in height. Both...
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5011790 |
Method of manufacturing cubic boron nitride p-n junction body
In a method of manufacturing a cubic boron nitride p-n junction body, cBN seed crystals (1) of a first conductivity type are made coexist with original BN (3) and a solvent (2) containing a doping...
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4946544 |
Crystal growth method
The problem of spurious inclusions of excess Group V material in the growth of III-V crystals is reduced by including, along with the raw material (12) in the crucible, a quantity (13) of the...
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4883648 |
Cubic boron nitride manufacture
A method is provided for producing large cubic boron nitride crystals having the size of 0.1 carat or larger. The method involves providing a reaction vessel which contains CBN seed material (32),...
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4875967 |
Method for growing a single crystal of cubic boron nitride semiconductor and method for forming a p-n junction thereof, and light emitting element
A method for growing a single crystal of cubic boron nitride semiconductor in a growing container sealed under high pressure and high temperature conditions, which comprises dissolving in a...
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4613495 |
Growth of single crystal Cadmium-Indium-Telluride
A method for producing a large high-quality single crystal of Cadmium-Indium-Telluride is disclosed wherein a stoichiometric crystal is produced from a non-stoichiometric melt composition. An...
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4415545 |
Solid film growth via preferential etching of liquid solutions
A process for growing crystals of an inorganic material by forming a solution of the material in a solvent for the compound, forming a film of the solution and etching the solvent from the film...
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4249987 |
Method of growing large Pb.sub.1-x -Sn.sub.x -Te single crystals where 0<X<1
Large single crystals of Pb 1 -x -Sn x -Te are grown in a near-equilibrium condition by applying a minimal driving force such that a high degree of growth reliability is achieved. The process...
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4152194 |
Growth of silicon carbide crystals on a seed while pulling silicon crystals from a melt
A saturated solution of silicon and an element such as carbon having a segregation coefficient less than unity is formed by placing a solid piece of carbon in a body of molten silicon having a...
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3933573 |
Aluminum nitride single crystal growth from a molten mixture with calcium nitride
A method for growing single crystals which utilizes calcium nitride as a solvent system in the molten solution growth of bulk aluminum nitride crystals.
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3544480 |
CADMIUM SILICATE CRYSTALS
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3536538 |
CRYSTAL GROWTH TECHNIQUE
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3494730 |
PROCESS FOR PRODUCING CADMIUM TELLURIDE CRYSTAL
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3480385 |
PROCESS FOR GROWING SINGLE CRYSTALS
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