|
Match
|
Document |
Document Title |
|
|
8062420 |
Nonlinear optical crystals and their manufacture and use
Described are nonlinear optical (NLO) crystals, including aluminum-borate NLO crystals, that have low concentrations of contaminants that adversely affect the NLO crystal's optical properties, such...
|
|
|
8038794 |
Group III-nitride crystal, manufacturing method thereof, group III-nitride crystal substrate and semiconductor device
A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a...
|
|
|
8012256 |
Method of fabricating a quasi-substrate wafer and semiconductor body fabricated using such a quasi-substrate wafer
Disclosed are a method of fabricating a quasi-substrate wafer with a subcarrier wafer and a growth layer, and a semiconductor body fabricated using such a quasi-substrate wafer. In the method of...
|
|
|
7981215 |
Electrospun single crystal MoO3 nanowires for bio-chem sensing probes
Single crystal MoO3 nanowires were produced using an electrospinning technique. High resolution transmission electron microscopy (HRTEM) revealed that the 1-D nanostructures are from 10-20 nm in...
|
|
|
7959729 |
Method for producing group-III-element nitride single crystals and apparatus used therein
A production method is provided in which Group-III-element nitride single crystals that have a lower dislocation density and a uniform thickness and are transparent, high quality, large, and bulk...
|
|
|
7850777 |
Method of preparing semiconductor nanocrystal compositions
A semiconductor nanocrystal composition comprising a Group V to VI semiconductor material and a method of making same. The method includes synthesizing a semiconductor nanocrystal core, where the...
|
|
|
7828895 |
Method of producing optical element
The invention relates to a method of producing an optical element using a garnet single crystal for the purpose of providing an optical element with a reduced Pb content or from which Pb can...
|
|
|
7794539 |
Method for producing III group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby
A method for producing Group-III-element nitride crystals by which an improved growth rate is obtained and large high-quality crystals can be grown in a short time, a producing apparatus used...
|
|
|
7713352 |
Synthesis of fibers of inorganic materials using low-melting metals
A process is provided to produce bulk quantities of nanowires in a variety of semiconductor materials. Thin films and droplets of low-melting metals such as gallium, indium, bismuth, and aluminum...
|
|
|
7695562 |
Magnetic garnet single crystal and method for producing the same as well as optical element using the same
It is an object of the present invention to provide a magnetic garnet single crystal at a reduced Pb content, and a method for producing the same and an optical element using the same. The object...
|
|
|
7611750 |
Nanocomposite material and method of manufacturing the same comprising forming an inorganic matrix by sol-gel reaction
A nanocomposite material and a method of manufacturing the same are disclosed. The nanocomposite material includes a plurality of nanoparticles coated with a metal oxide, and a matrix of the metal...
|
|
|
7547358 |
System and method for diamond deposition using a liquid-solvent carbon-transfer mechanism
A system and method for growing diamond crystals from diamond crystal seeds by epitaxial deposition at low temperatures and atmospheric and comparatively low pressures. A solvent is circulated (by...
|
|
|
7527690 |
Ferroelectric ceramic compound, a ferroelectric ceramic single crystal, and preparation processes thereof
The present invention relates to a ferroelectric ceramic compound having the composition of the following formula: s[L]−x[P]y[M]z[N]p[T], a ferroelectric ceramic single crystal, and preparation p...
|
|
|
7507292 |
Method for producing group III element nitride single crystal and group III element nitride transparent single crystal prepared thereby
A method for producing a Group III element nitride single crystal, which comprises reacting at least one Group III element selected from the group consisting of gallium(Ga), aluminum(Al) and...
|
|
|
7435296 |
Diamond bodies grown on SiC substrates and associated methods
The present invention provides methods of forming high quality diamond bodies under high pressure, and the diamond bodies produced by such methods. In one aspect, a method is provided for growing a...
|
|
|
7410539 |
Template type substrate and a method of preparing the same
The template type substrate is used for opto-electric or electrical devices and comprises A) a layer of bulk mono-crystal nitride containing at least one element of alkali metals (Group I, IUPAC...
|
|
|
7396408 |
Monocrystalline diamond layer and method for the production thereof
This invention relates to a method for the production of diamond films with low misorientation through the deposition of diamond on a film system, whereby the film system exhibits a substrate film...
|
|
|
7374817 |
Topological crystal of transition metal chalcogenide and method of forming the same
Disclosed is a transition-metal chalcogenide crystal having a topological configuration/structure. A micro-droplet of a chalcogen element, such as S, Se or Te, is condensed and circulated in...
|
|
|
7288150 |
Homogeneous incorporation of activator element in a storage phosphor
A method has been disclosed for manufacturing a storage phosphor for use in a photostimulable phosphor screen or panel comprising a support and a storage phosphor layer, wherein a dopant or...
|
|
|
7267721 |
Method for preparing group IV nanocrystals with chemically accessible surfaces
Group IV nanocrystals, such as, for example, silicon nanocrysals and germanium nanocrystals, with chemically accessible surfaces are produced in solution reactions. Group IV halides can be reduced...
|
|
|
7264675 |
Diamond manufacturing method
In a diamond manufacturing method, a melt of carbon and blue kimberlite is contained in a vessel at 1000° C. The vessel is pressurized by a gas of predominantly hydrogen to 200 atmospheres. A ...
|
|
|
7229497 |
Method of preparing nanocrystals
A population of nanocrystals having a narrow and controllable size distribution and can be prepared by a continuous flow method.
|
|
|
7220311 |
Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride
A crystal growth method of a group III nitride includes the steps of forming a melt mixture of an alkali metal and a group III element in a reaction vessel, and growing a crystal of a group III...
|
|
|
7132015 |
Materials for dental and biomedical application
The invention provides novel dental enamel inspired materials for biomedical and dental applications. The materials are apatite-like calcium phosphate complexes and may comprise apatite,...
|
|
|
7118627 |
Synthesis of colloidal PbS nanocrystals with size tunable NIR emission
The present invention discloses a method for synthesis of narrowly dipsersed colloidal PbS nanocrystals that offer size-tunable near-infrared emission. The stability and processibility of these...
|
|
|
7115165 |
Single crystal of nitride containing metal element of group III or IV and method for preparing the same
β-ZrNCl polycrystalline powder prepared by chemical transport method and NH4Cl are mixed in a molar ratio of 1:2. The mixture is encapsulated in a Au capsule (6 mm in inner diameter and 6 mm in ...
|
|
|
7105053 |
Energy efficient method for growing polycrystalline silicon
Polysilicon dendrites are grown by depositing silicon on a polysilicon rod or other substrate. Surface temperature is increased to a temperature at which needle-like dendrites develop due to the...
|
|
|
7081162 |
Method of manufacturing bulk single crystal of gallium nitride
The present invention provides a process for forming a bulk monocrystalline gallium nitride by using supercritical ammonia. The process comprises the steps of forming a supercritical solvent...
|
|
|
7060130 |
Heteroepitaxial diamond and diamond nuclei precursors
A process for growing by chemical vapor deposition a heteroepitaxial single crystal diamond is disclosed. The process provides a substrate which enables the growth of single crystal diamond which...
|
|
|
7037370 |
Free-standing diamond structures and methods
The present invention is directed in one aspect to methods of making free-standing, internally-supported, three-dimensional objects having an outer surface comprising a plurality of intersecting...
|
|
|
7018549 |
Method of fabricating multiple nanowires of uniform length from a single catalytic nanoparticle
A method is described for fabricating multiple nanowires of uniform length from a single precursor nucleation particle. The method includes growing a first nanowire segment from a nanoparticle and...
|
|
|
6872251 |
Method for manufacturing single crystal ceramic powder, and single crystal ceramic powder, composite material, and electronic element
A method for manufacturing single crystal ceramic powder is provided. The method includes a powder supply step for supplying powder consisting essentially of ceramic ingredients to a heat treatment...
|
|
|
6607593 |
Method of manufacturing a mono-crystalline silicon ball
When a crystalline nucleus generated from an under-cooled silicon droplet is grown up to a mono-crystalline silicon ball, a critical under-cooling ΔTcr is determined in response to a diameter d of ...
|
|
|
6596078 |
Method of producing oxide whiskers, oxide whiskers, and photoelectric conversion apparatus
A method of producing oxide whiskers is provided which comprises heating a source material comprised of a metal or an inorganic compound at a first temperature to be vaporized and depositing a...
|
|
|
6497762 |
Method of fabricating crystal thin plate under micro-gravity environment
A method of fabricating a crystal thin plate of a substance capable of forming a crystal, wherein a molten layer of the substance formed on a support is cooled in the atmosphere of an inert gas or...
|
|
|
6488770 |
Monocrystalline powder and monograin membrane production
For production of monocrystalline powders there is formed a melt to which a fluxing agent is added. The melt contains the components of a semiconductor material, an example being the components of...
|
|
|
6440213 |
Process for making surfactant capped nanocrystals
Disclosed is a process for making surfactant capped nanocrystals of transition metal oxides. The process comprises reacting a metal cupferron complex of the formula M Cup, wherein M is a transition...
|
|
|
6338755 |
Method for producing a single crystalline member
An amorphous film 2 is formed on a single crystalline substrate 1. Then, the amorphous film is selectively removed by photolithography to form windows 3. Subsequently, the windows 3 are contacted...
|
|
|
6270569 |
Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method
A Group III metal element is heated so as to melt, a gas NH3 containing nitrogen atoms is injected into a melt 3 of the Group III metal element at a temperature lower than the melting point of a...
|
|
|
6241819 |
Method of manufacturing quantum sized doped semiconductor particles
Doped semiconductor nanoparticles of a size (<100 Å) which exhibit quantum effects. The nanoparticles are grown and doped within a polymer matrix.
|
|
|
6139626 |
Three-dimensionally patterned materials and methods for manufacturing same using nanocrystals
A method for patterning materials according to a predetermined, three-dimensional pattern, as well as patterned materials produced by said methods, are provided. A template is prepared comprising a...
|
|
|
6110275 |
Manufacture of titanium carbide, nitride and carbonitride whiskers
There is disclosed a method of producing, in large volume and at low cost, titanium carbide, nitride and carbonitride whiskers, with preferably submicron diameters, to be used as reinforcing...
|
|
|
5853477 |
Manufacture of transition metal carbide, nitride and carbonitride whiskers
There is disclosed a method of producing, in large volumes and at low cost, Ta, Nb, Zr and Hf carbide, nitride or carbonitride whiskers, preferably submicron, having excellent reinforcing...
|
|
|
5851285 |
Manufacture of transition metal carbide, nitride, and carbonitride whiskers containing two or more transition metals
There is disclosed a method of producing whiskers in large volumes and at low cost to be used as reinforcing material. The whiskers are solid solutions between two or more transition metal...
|
|
|
5837209 |
Tin oxide whisker
Tin oxide whisker having a length of 0.1 to 100 μm, a thickness of 0.005 to 5 μm, and a ratio of the length to the thickness of at least 5, containing optionally a dopant such as antimony and b...
|
|
|
5817173 |
Method for making spherical crystals
The present invention relates to a method for forming crystal substrates on which can be easily formed spherical crystals which have superior crystal structure and little defect in shape. The...
|
|
|
5702822 |
Method for producing single crystal, and needle-like single crystal
A method for producing a single crystal, which comprises (1) placing a metal layer as a pattern at a desired position on the surface of a single crystal substrate, (2) etching the surface of the...
|
|
|
5688320 |
Process for manufacturing aluminum nitride whiskers
Aluminum nitride whiskers are produced by reducing alumina with carbon in a nitrogen atmosphere, at a temperature of 1800° to 2000° C., in the presence of a growth activator containing a solvent e...
|
|
|
5667585 |
Method for the preparation of wire-formed silicon crystal
Proposed is a low-cost method for the preparation of a wire-formed crystal of silicon having a diameter of 1 mm or smaller, in which a vertically held starting rod of silicon is melted at one end...
|
|
|
5650007 |
Method for production of spinel single crystal filaments
Spinel single crystal filaments are produced by a method which consists essentially of solidifying in one direction a melt consisting essentially of 30 to 70% by weight of magnesium oxide, 10 to...
|