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7621997 |
Methods of preparing a multi-shell nanocrystal structure, multi-shell nanocrystal structures and fabricated device including the same
Methods of preparing a multi-shell nanocrystal structure, multi-shell nanocrystal structures thus obtained, and a fabricated device including the same are provided. A multi-shell nanocrystal...
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7611578 |
Processes of forming small diameter rods and tubes
The invention provides a method for the production of a photonic device comprising providing a substrate, forming in the substrate substantially straight pores, lining or filling the pores with a...
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7585365 |
Corundum crystal formed body
A corundum crystal formed body having a corundum crystal grown directly on a base material and a production process capable of producing the corundum crystal formed body easily at low costs. The a...
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7507292 |
Method for producing group III element nitride single crystal and group III element nitride transparent single crystal prepared thereby
A method for producing a Group III element nitride single crystal, which comprises reacting at least one Group III element selected from the group consisting of gallium(Ga), aluminum(Al) and...
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7462238 |
Crystal growth apparatus and method of producing a crystal
A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal in a vessel space thereof, a porous member holding a metal melt by a...
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7422633 |
Method of forming gallium-containing nitride bulk single crystal on heterogeneous substrate
The present invention provides a process for forming a bulk monocrystalline gallium-containing nitride, i.e. GaN etc., on the surface of heterogeneous substrate, i.e. SiC etc., comprising the steps...
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7384476 |
Method for crystallizing silicon
A method for crystallizing silicon is provided. The method includes: forming an amorphous silicon layer on a substrate; aligning a mask above the substrate, the mask being divided into a plurality...
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7316746 |
Crystals for a semiconductor radiation detector and method for making the crystals
A method for a growing solid-state, spectrometer grade II-VI crystal using a high-pressure hydrothermal process including the following steps: positioning seed crystals in a growth zone of a...
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7309534 |
Group III nitride crystals usable as group III nitride substrate, method of manufacturing the same, and semiconductor device including the same
The present invention provides a method of manufacturing Group III nitride crystals that are of high quality, are manufactured highly efficiently, and are useful and usable as a substrate that is...
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7264675 |
Diamond manufacturing method
In a diamond manufacturing method, a melt of carbon and blue kimberlite is contained in a vessel at 1000° C. The vessel is pressurized by a gas of predominantly hydrogen to 200 atmospheres. A...
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7220311 |
Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride
A crystal growth method of a group III nitride includes the steps of forming a melt mixture of an alkali metal and a group III element in a reaction vessel, and growing a crystal of a group III...
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7198738 |
Cesium-lithium-borate crystal and its application to frequency conversion of laser light
The present invention provides a cesium-lithium-borate crystal, which can be used as a high-performance wavelength converting crystal, having a chemical composition expressed as CsLiB6O10, and...
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7160388 |
Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed...
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7115165 |
Single crystal of nitride containing metal element of group III or IV and method for preparing the same
β-ZrNCl polycrystalline powder prepared by chemical transport method and NH 4 Cl are mixed in a molar ratio of 1:2. The mixture is encapsulated in a Au capsule (6 mm in inner diameter and 6 mm in...
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7063741 |
High pressure high temperature growth of crystalline group III metal nitrides
A method of forming at least one single crystal of a Group III metal nitride. The method includes the steps of: providing a flux material and a source material comprising at least one Group III...
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7001457 |
Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth...
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6858077 |
Single crystalline silicon wafer, ingot, and producing method thereof
The present invention relates to a single crystalline silicon ingot, a single crystalline wafer, and a producing method thereof in accordance with the Czochralski method which enables reduction of...
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6673647 |
Method for growing a solid type II-VI semiconductor material
A growth method for a bulk II-VI type semiconductor material, including at least a first component and a second component. The method supplies in a crucible a charge including the components, with...
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6488770 |
Monocrystalline powder and monograin membrane production
For production of monocrystalline powders there is formed a melt to which a fluxing agent is added. The melt contains the components of a semiconductor material, an example being the components of...
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6294726 |
Silicon with structured oxygen doping, its production and use
The present invention relates to silicon with a high oxygen content and, at the same time, a high density of crystal lattice dislocations, and to its production. This silicon may be used in...
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6270569 |
Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method
A Group III metal element is heated so as to melt, a gas NH 3 containing nitrogen atoms is injected into a melt 3 of the Group III metal element at a temperature lower than the melting point of a...
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5471938 |
Process for growing multielement compound single crystal
A process for growing a multielement compound single crystal, includes the steps of placing a crucible holding a raw multielement compound of a predetermined set of composition ratios Y in a...
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5431126 |
Method of forming semiconductor crystal and semiconductor device
A thin semiconductor film having at least one an edge is formed on a base whose material is different from the material of the thin semiconductor film. A laser beam, for example, is applied to the...
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5407858 |
Method of making gap red light emitting element substrate by LPE
To provide a GaP red light emitting element substrate which a large amount of oxygen is doped in the p-type GaP layer, and which very few Ga 2 O 3 precipitates develop on and/or in p-type GaP...
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5397736 |
Liquid epitaxial process for producing three-dimensional semiconductor structures
By a liquid epitaxial process monocrystalline semiconductor layers are produced having a high degree of crystal perfection in a multi-layer arrangement on intermediate layers of an insulating...
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5356509 |
Hetero-epitaxial growth of non-lattice matched semiconductors
A method for growing a compound semiconductor, such as GaAs or InP, on a non-lattice matched substrate, such as Si, utilizes close-spaced vapor transport to deposit nucleation enhancing interlayer...
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5343827 |
Method for crystal growth of beta barium boratean
A method of growing optical quality beta barium borate; crystals from a pure NaCl fluxed melt. The method comprises maintaining particular thermal field conditions throughout the melt and slowly...
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5178719 |
Continuous refill crystal growth method
Large crystals of alkali halide materials are presently produced using the Bridgman-Stockbarger method and result in state-of-the-art crystals of up to 30" in diameter and 20" in height. Both...
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4132571 |
Growth of polycrystalline semiconductor film with intermetallic nucleating layer
A method is disclosed for fabricating a thin elemental semiconductor, e.g., Si or Ge, film with columnar grains in a filamentary structure, by the use of an intermetallic compound incorporating the...
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4096024 |
Method for controlling the solidification of a liquid-solid system and a device for the application of the method
The growth of a solid obtained by cooling a liquid solution is observed and controlled by measuring the variation in volume of the solid-liquid system at the time of solidification. The method is...
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3972753 |
Method for the epitaxial growth from the liquid phase
A method for the successive epitaxial deposition on a semiconductor substrate of a first semiconductor layer and at least one further semiconductor layer, said layers differing mutually as to at...
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3628998 |
METHOD FOR GROWTH OF A MIXED CRYSTAL WITH CONTROLLED COMPOSITION
A mixed crystal e.g., Ga x In 1 -x P, of controlled composition in the growth direction, either of substantially homogeneous composition or of variable composition, is prepared from the melt or...
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3447976 |
FORMATION OF HETEROJUNCTION DEVICES BY EPITAXIAL GROWTH FROM SOLUTION
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3427211 |
PROCESS OF MAKING GALLIUM PHOSPHIDE DENDRITIC CRYSTALS WITH GROWN IN P-N LIGHT EMITTING JUNCTIONS
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3335038 |
Methods of producing single crystals on polycrystalline substrates and devices using same
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3278342 |
Method of growing crystalline members completely within the solution melt
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3160522 |
Method for producting monocrystalline semiconductor layers
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2955966 |
Manufacture of semiconductor material
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2859142 |
Method of manufacturing semiconductive devices
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2849343 |
Method of manufacturing semi-conductive bodies having adjoining zones of different conductivity properties
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2824030 |
Method of preparing semiconductive materials
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2817608 |
Melt-quench method of making transistor devices
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3772428 |
Title is not available
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