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8246745 Method and device for producing metal foils  
A method and device for producing metal foils using the foil-casting principle includes the steps of filling a casting frame with liquid metal, moving a substrate through the bottom of the casting...
7615115 Liquid-phase growth apparatus and method  
A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a raw material for forming the crystal, and a substrate holder for...
7520932 Method of analyzing carbon concentration in crystalline silicon  
A method of analyzing carbon concentration in crystalline silicon includes providing a section from a zoned and annealed silicon core. The zoned and annealed core is extracted from a...
7048797 Liquid-phase growth process and liquid-phase growth apparatus  
A liquid-phase growth process for continuously growing a crystal film on a plurality of substrates with respect to their one side surfaces, characterized in that said plurality of substrates are...
7022181 Liquid phase growth process, liquid phase growth system and substrate member production method  
In a liquid phase growth process comprising immersing a substrate in a melt held in a crucible, a crystal material having been dissolved in the melt, and growing a crystal on the substrate, at...
6951584 Apparatus for producing semiconductor thin films on moving substrates  
An apparatus for producing semiconductor thin films in which the semiconductor thin films are allowed to grow on a plurality of substrates by dipping the plurality of substrates into a solution...
5525539 Method for forming a light emitting diode for use as an efficient emitter or detector of light at a common wavelength  
An infrared LED can function efficiently as both an emitter and a detector at a common wavelength without undesirable characteristics found in avalanche diodes. The LED comprises a graded-bandgap...
5234534 Liquid-phase growth process of compound semiconductor  
A liquid-phase growth process of a compound semiconductor which is capable of effectively controlling the generation of a surface defect and improve the product quality and production yield is...
5223079 Forming thin liquid phase epitaxial layers  
A thin layer of liquid phase epitaxial melt material (26) is formed on a wafer (15,16). The thin melt layer (26) is held in contact with the wafer (15,16) while the temperature of the thin melt...
5185288 Epitaxial growth method  
An electro-optical device with a transparent substrate is produced by epitaxially first growing the device layers, followed by that of the transparent substrate layer on an opaque wafer. The...
5098867 Heat treatment for compound semiconductor wafer  
A compound semiconductor wafer wherein arsenide deposit is included with uniform size and distribution in such a manner that a compound reagent of gallium and polycrystal gallium arsenide is...
4920067 Process for II-VI compound epitaxy  
Hg1-x Cdx Te, Hg1-x Znx Te and other related II-VI ternary semiconductor compounds are important strategic materials for photovoltaic infrared detector applications. Liquid phase epitaxy employing...
4906325 Method of making single-crystal mercury cadmium telluride layers  
A method of making symmetrical mercury cadmium telluride layers by epitaxial growth on a cadmium telluride substrate, performed inside a reactor with two communicating zones, kept at different and...
4872943 Process for making monocrystalline HGCDTE layers  
A process for making single-crystal mercury cadmium telluride layers by epitaxial growth on a cadmium telluride substrate, performed inside a reactor with two communication zones, kept at...
4798812 Method for liquid phase epitaxial growth  
A method of fabricating a solid state device having chemically bound arsenic and phosphorous includes carrying out liquid phase epitaxial growth in the presence of partial pressures of arsenic and...
4778478 Method of making thin film photovoltaic solar cell  
Solar cell quality semiconductors are grown using a constant temperature sliding boat liquid phase process in a continuous or semi-continuous mode. The growth is driven by applying a temperature...
4706604 Wipe-off apparatus of liquid phase epitaxy of mercury cadmium telluride  
In a covered graphite slider apparatus for the liquid phase epitaxial growth of mercury cadmium telluride, this invention shows the addition of an improved wipe-off arrangement positioned in...
4702781 Liquid phase epitaxial growth method  
Disclosed is a liquid phase epitaxial growth method using a slider having a recess which receives a semiconductor substrate, and a growth boat having a solution holder which holds plural kinds of...
4697543 Liquid phase epitaxy slider/stator assembly having non-wetting growth well liners  
A slider/stator device for the growth of thin film material, such as mercury cadmium telluride, in which the substrate, thin film and growth solution are kept free from impurities by use of...
4692194 Method of performing solution growth of a GaAs compound semiconductor crystal layer under control of conductivity type thereof  
In a solution growth method to perform an epitaxial growth by doping an amphoteric impurity into a Group III-V compound semiconductor crystal, vapor of a crystal-constituting Group V element is...
4642142 Process for making mercury cadmium telluride  
Mercury cadmium telluride (Hg1-x Cdx Te) is formed from an atmosphere of mercury vapor maintained at a temperature of within about 1° C. of a desired temperature which contacts a liquid...
4629519 Forming magnesium-doped Group III-V semiconductor layers by liquid phase epitaxy  
A method of manufacturing a semiconductor device, in which an epitaxial layer doped with magnesium compounds of elements from the groups III and V of the periodic system of elements is deposited...
4620897 Method for growing multicomponent compound semiconductor crystals  
A method and apparatus for growing crystals of a more than three multicomponents compound semiconductor from its growth solution in which a source material containing at least one solute element...
4609411 Liquid-phase epitaxial growth method of a IIIb-Vb group compound  
The reproducibility of Te doping in III-V group compounds is improved by using as the dopant a III-V group compound containing Te at a concentration of at least 1×1017 cm-3.
4594126 Growth of thin epitaxial films on moving substrates from flowing solutions  
An apparatus and method for the growth of thin epitaxial layers on crystalline substrates. A portion of the growth surface of a substrate held at temperature T2 is contacted with a solution with a...
4578126 Liquid phase epitaxial growth process  
A liquid phase epitaxial growth process for particular use in growing semi-insulating epitaxial layers of III-V semiconductor compounds such as indium phosphide, indium gallium arsenide, and...
4566934 Cleaning technique for LPE melt ingots  
In the liquid phase epitaxy growth of Group III-V compound semiconductors using boat-slider apparatus, melt-carry-over is essentially eliminated by prebaking the metallic solvent (e.g., In shot)...
4565156 Apparatus for performing solution growth relying on temperature difference technique  
A solution growth apparatus for conducting an epitaxial growth of a compound semiconductor crystal from solution by relying on the temperature difference technique at a constant growth temperature...
4561915 Process for epitaxial growth on a corrugated wafer  
A process for epitaxial growth which effects epitaxial growth while suppressing thermal deformation of surface corrugations of an InGaAsP/InP system semiconductor substrate. Deformation of surface...
4547230 LPE Semiconductor material transfer method  
A method for liquid phase epitaxy maskless deposition of a III-V compound on a substrate in a pre-determined pattern includes the steps of contacting a growth wafer having a patterned mask thereon...
4540450 InP:Te Protective layer process for reducing substrate dissociation  
In order to prevent the formation of indium droplets upon the surface of an indium phosphide wafer during liquid phase epitaxial growth, a doped protective layer is deposited by LPE upon said...
4500367 LPE Growth on group III-V compound semiconductor substrates containing phosphorus  
Liquid phase epitaxy (LPE) growth of a Group III-V semiconductor compound layer upon a Group III-V semiconductor compound substrate containing phosphorus is accomplished in a graphite meltholder...
4498937 Liquid phase epitaxial growth method  
During liquid phase epitaxial growth of a compound semiconductor layer on a substrate, an unsaturated solution is brought into contact with a solute source crystalline plate. The plate dissolves...
4468258 Method of controlling the partial pressure of at least one substance mixture or mixture of substances  
A method of controlling the partial pressure of at least one substance or substance mixture comprising arranging the substance or mixture of substances in a chamber, arranging at least one element...
4465527 Method for producing a group IIB-VIB compound semiconductor crystal  
A method for producing a Group II-VI compound semiconductor crystal containing a Group VI element other than Te by a temperature-difference method for growing the crystal from a solution...
4427464 Liquid phase epitaxy  
A method of liquid phase epitaxy is disclosed for growing a plurality of different layers on each of a plurality of semiconductor wafers during a single heating cycle. Each of a series of melts,...
4390379 Elimination of edge growth in liquid phase epitaxy  
A method of growing a semiconductor layer by liquid phase epitaxy utilizing a slide type apparatus comprising a substrate carrier having a recess for holding a substrate and a source material...
4389274 Electrochemical deoxygenation for liquid phase epitaxial growth  
A method for removing residual oxygen from a growth solution prior to liq phase epitaxial crystal growth comprising the steps of disposing the materials in a containment vessel of a solid oxide...
4373989 Controlled in situ etch-back  
A controlled in situ etch-back technique is disclosed in which an etch melt 17 and a growth melt 18 are first saturated by a source-seed crystal 15 and thereafter etch-back of a substrate 14 takes...
4371420 Method for controlling impurities in liquid phase epitaxial growth  
In a process for growth of a layer of semiconductor material by precipitation from a solution of the semiconductor material in a solvent by liquid phase epitaxial growth (LPE), the improvement is...
4366771 Mercury containment for liquid phase growth of mercury cadmium telluride from tellurium-rich solution  
Hg1-x Cdx Te is an important semiconductor for use in photovoltaic and photoconductive infrared photon detectors. Hg1-x Cdx Te can be grown by liquid phase epitaxy at atmospheric pressure from a...
4366009 Method of manufacturing semiconductor structures by epitaxial growth from the liquid phase  
In manufacturing a semiconductor device by epitaxial growth from the liquid phase on a substrate of layers of gallium arsenide or gallium aluminum arsenide doped with elements such as germanium,...
4357897 Device for epitaxially providing a layer of semiconductor material  
A liquid-phase epitaxial growth device has a reservoir holder (1), a slider (14) movably mounted below the reservoir holder to enable each reservoir (2, 3, 4, 5) to be selectively uncovered so as...
4342148 Contemporaneous fabrication of double heterostructure light emitting diodes and laser diodes using liquid phase epitaxy  
In the manufacture of double heterostructure laser diodes using liquid phase epitaxy a source crystal precedes the laser substrate crystal through the process to ensure saturation of the various...
4339302 Semiconductor materials  
A Group III element Q selected from gallium, indium and thallium containing a Group VI element X selected from oxygen, sulphur, selenium and tellurium as an impurity can be purified by adding, to...
4315796 Crystal growth of compound semiconductor mixed crystals under controlled vapor pressure  
A compound semiconductor mixed crystal is grown by causing semiconductor-constituent material to travel, in dissolved liquid phase, through a solution having a portion contacting the source...
4307680 Growth of semiconductor compounds  
Semiconductor compounds which are alloys of group III-V compounds are grown by a liquid phase epitaxy method which includes heating growth apparatus in a reducing atmosphere while maintaining a...
4263064 Method of liquid phase epitaxial growth  
An improved method of liquid phase epitaxial growth of III-V compound on an nP substrate by growing the epitaxial layer in an atmosphere of H2 with 10-5 to 10-4 mole fraction PH3.
4261770 Process for producing epitaxial semiconductor material layers on monocrystalline substrates via liquid phase shift epitaxy  
A process for producing epitaxial semiconductor material layers on monocrystalline substrates via liquid phase shift epitaxy wherein, in order to avoid bead-growth on a substrate, at least the...
4227962 Prevention of decomposition of phosphorous containing substrates during an epitaxial growth sequence  
Loss of phosphorous from a phosphorous containing substrate is eliminated by maintaining a partial pressure of phosphorous in the vicinity of the substrate higher than the inherent partial...
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