Matches 51 - 97 out of 97 < 1 2


Match Document Document Title
4203785 Method of epitaxially depositing cadmium sulfide  
A single crystal layer of either cadmium sulfide or an alloy of cadmium sulfide and indium phosphide is epitaxially deposited on a substrate of cadmium sulfide by liquid phase epitaxy using indium...
4201623 Method for making epitaxial silicon crystals with uniform doping levels  
A crystal substrate of <111> silicon is doped by being exposed to a liquid etal solvent. The substrate is carried in a cavity in a refractory boat, and the solvent is carried in a perforation of a...
4179317 Method for producing compound semiconductor crystals  
A method for producing III-V compound semiconductor crystals using a liquid phase epitaxial growth, in which the crystal growth is achieved in a state in which a single crystal of the same...
4159694 Apparatus for depositing epitaxial semiconductor from the liquid phase  
A furnace boat has a plurality of wells therein. A first slide movably extends through the boat along and across the bottom of the wells. The first slide carries a substrate on which layers of...
4149914 Method for depositing epitaxial monocrystalline semiconductive layers via sliding liquid phase epitaxy  
A method of depositing a plurality of epitaxial monocrystalline layers of semiconductive materials onto an individual substrate of a plurality of substrates via the sliding liquid phase epitaxy...
4142924 Fast-sweep growth method for growing layers using liquid phase epitaxy  
A uniform and thin layer of a semiconductor is grown on a semiconductor substrate by an improved liquid phase epitaxy growth method. The growth solution is supercooled and is pushed rapidly over...
4126930 Magnesium doping of AlGaAs  
Aluminum gallium arsenide is used as a transparent, conducting contact layer on the exposed surface of a gallium arsenide photovoltaic cell. Increased conductivity for the high current generated...
4123302 Method for depositing epitaxial semiconductor from the liquid phase  
A furnace boat has a plurality of wells therein. A first slide movably extends through the boat along and across the bottom of the wells. The first slide carries a substrate on which layers of...
4115162 Process for the production of epitaxial layers on monocrystalline substrates by liquid-phase-slide epitaxy  
A process or method for the production of epitaxial layers on a monocrystalline substrate by moving a melt on a surface of the substrate, depositing the layer and then removing the remaining melt...
4110133 Growth of semiconductor compounds by liquid phase epitaxy  
A method of growing semiconductor compounds which are formed from elements of group III with elements of group V by liquid phase epitaxy. A suitable solvent is provided in contact with a source of...
4088514 Method for epitaxial growth of thin semiconductor layer from solution  
Thin epitaxial layers of Group III-V semiconductor materials are grown from solution with improved thickness reproducibility and surface smoothness by a method including the steps of preparing an...
4063972 Method for growing epitaxial layers on multiple semiconductor wafers from liquid phase  
A plurality of single-crystal epitaxial layers of semiconductors are simultaneously grown on a plurality of suitable substrates from the liquid phase by a method which includes the step of...
4052252 Liquid phase epitaxial growth with interfacial temperature difference  
A thin layer of semiconductor material with an extremely smooth surface can be grown on a substrate by liquid phase epitaxy. When the growing solution contacts the surface of the substrate, the...
4050964 Growing smooth epitaxial layers on misoriented substrates  
A process for improving the smoothness of semiconductor layers grown by epitaxy is described. Smooth epitaxial layers, free of crystal terraces, are attained by misorienting the growth surface of...
4030949 Method of effecting liquid phase epitaxial growth of group III-V semiconductors  
Disclosed is a method of yielding a multilayer-liquid phase epitaxial growth of Alx Ga1-x As and GaAs for manufacturing a double heterostructure laser, light emitting diode, etc., which is...
4028146 LPE Technique for fabricating tapered optical couplers  
Described is a double heterostructure junction laser in which the active region tapers to zero thickness within the structure, causing light to couple into an adjacent, underlying passive...
4028148 Method of epitaxially growing a laminate semiconductor layer in liquid phase  
A method of epitaxially growing a laminate semiconductor layer in liquid phase on the crystalline surface of a substrate by successively bringing different kinds of liquid phase epitaxial growth...
4026240 Liquid phase epitaxial reactor apparatus  
A liquid phase epitaxial reactor is provided in which a simple cycling mechanism sequentially feeds semiconductor wafers from an input stack into a deposition region and thence to an output stack....
3990392 Epitaxial growth apparatus  
Method of and device for the epitaxial deposition of a layer of a semiconductor material on a substantially flat side of a crystalline substrate from a melt which contains the semiconductor...
3981764 III-V Compound semi-conductor crystal growth from a liquid phase on a substract including filtering liquid phase  
In an epitaxial growth method in liquid phase for III-V compound semiconductor crystals a solution for crystal growth is at first heated to a temperature which is higher than the temperature of...
3963536 Method of making electroluminescent semiconductor devices  
In making electroluminescent devices comprised of layers of semiconductor material of different conductivity types, the layers are formed by a liquid phase epitaxy process in which the layer...
3960618 Epitaxial growth process for compound semiconductor crystals in liquid phase  
In an epitaxial growth process for compound semiconductor crystals in a liquid phase, a substrate crystal is brought into contact with an etching solution containing as solute a predetermined...
3950195 LPE technique for reducing edge growth  
Described is a liquid phase epitaxy technique using conventional slider apparatus in which, after heating the source solution to saturation, the solution temperature is rapidly reduced so that...
3940296 Method for growing epitaxial layers from the liquid phase  
In a method of providing a layer of semiconductor material on a flat side of a substrate from a solution which contains the semiconductor material, the substrate is provided in a recess of a...
3933538 Method and apparatus for production of liquid phase epitaxial layers of semiconductors  
Single-crystal epitaxial layers of compound semiconductors or mixed semiconductors are grown on suitable substrates from the liquid phase, which consists of a molten metallic solvent dissolving a...
3899371 Method of forming PN junctions by liquid phase epitaxy  
Two layers of a semiconductor material composed of three or more elements are deposited in succession by liquid phase epitaxy on a substrate. The layers may be of different conductivity types to...
3897281 Method for epitaxially growing a semiconductor material on a substrate from the liquid phase  
A metal solvent is melted and a semiconductor material is added to the molten metal solvent when the metal solvent is at approximately the temperature at which the deposition is to start. When the...
3896765 Apparatus for liquid-phase epitaxial growth  
An apparatus for liquid-phase epitaxial growth of a semiconductor including a crucible comprising an outer member having a cylindrical large bore at the upper end thereof and at least one...
3881037 Isothermal solution mixing growth of solids  
It has been discovered for the practice of this invention that when two melts at the same temperature which were separately and simultaneously saturated are mixed, the combined melt is...
3879235 Method of growing from solution materials exhibiting a peltier effect at the solid-melt interface  
A method of growing epitaxial layers from a solution in a solution-substrate system. An electrically conductive solution, consisting of one or more materials to be deposited upon the substrate, is...
3859178 MULTIPLE ANODIZATION SCHEME FOR PRODUCING GaAs LAYERS OF NONUNIFORM THICKNESS  
A multiple anodization technique is described for producing GaAs layers of nonuniform thickness; that is, GaAs layers having substantially rectangular steps or grooves of the type capable of...
3854447 APPARATUS FOR DEPOSITION OF SEMICONDUCTOR THIN LAYERS  
An apparatus for crystal growth is originally provided with at least one cavity arranged axially thereof for storing a solution containing material to be epitaxially grown on a plurality of...
3853643 EPITAXIAL GROWTH OF GROUP III-V SEMICONDUCTORS FROM SOLUTION  
Epitaxial layers of Group III-V compound semiconductors are grown from solution, simultaneously on several substrate wafers. The solution is produced in bulk at an elevated temperature. The mass...
3825449 METHOD OF DEPOSITING EPITAXIAL LAYERS ON A SUBSTRATE FROM THE LIQUID PHASE  
3785884 METHOD FOR DEPOSITING A SEMICONDUCTOR MATERIAL ON THE SUBSTRATE FROM THE LIQUID PHASE  
A layer of a semiconductor material is epitaxially deposited on a substrate by liquid phase epitaxy wherein a heated solution of the semiconductor material dissolved in a molten solvent is brought...
3765959 METHOD FOR THE LIQUID PHASE EPITAXIAL GROWTH OF SEMICONDUCTOR CRYSTALS  
A method for the liquid phase epitaxial growth of semiconductor crystals is performed using apparatus that comprises a dis-shaped vessel provided with a plurality of receptacles of a source...
3764408 METHOD OF OBTAINING GALLIUM ALUMINUM ARSENIDE FOR AN ELECTROLUMINESCENT DIODE  
3753801 METHOD OF DEPOSITING EXPITAXIAL SEMICONDUCTOR LAYERS FROM THE LIQUID PHASE  
One or more epitaxial layers of a semiconductor material are deposited on a substrate by providing for each epitaxial layer to be deposited a separate solution of a semiconductor material...
3747562 SLIDING FURNACE BOAT APPARATUS  
An improved furnace boat has been developed for the epitaxial solution growth of III-V compounds. The boat comprises one or more closed compartments wherein the growth solution or solutions are...
3741825 METHOD OF DEPOSITING AN EPITAXIAL SEMICONDUCTOR LAYER FROM THE LIQUIDPHASE  
3725149 LIQUID PHASE DIFFUSION TECHNIQUE  
3713900 METHOD FOR MAKING UNIFORM SINGLE CRYSTAL SEMICONDUCTORS EPITAXIALLY  
A liquid epitaxial method for growing single crystal semiconductors, such as gallium arsenide, having a substantially uniform three-dimensional impurity distribution. A melt of the epitaxial...
3692593 METHOD OF FORMING SEMICONDUCTOR DEVICE WITH SMOOTH FLAT SURFACE  
3692594 METHOD OF FORMING AN EPITAXIAL SEMICONDUCTIVE LAYER WITH A SMOOTH SURFACE  
3690965 SEMICONDUCTOR EPITAXIAL GROWTH FROM SOLUTION  
3664294 PUSH-PULL STRUCTURE FOR SOLUTION EPITAXIAL GROWTH OF III-V COMPOUNDS  
Epitaxial layers of III-V compounds are grown on the facing surfaces of a pair of parallel, spaced-apart wafers by forcing a small quantity of a solution saturated with a III-V compound between...
3631836 FIXED GRADIENT LIQUID EPITAXY APPARATUS  
A method and apparatus for growing an epitaxial layer on a semiconductor substrate by the use of liquid phase transport and a fixed temperature gradient are disclosed. The apparatus consists of a...

Matches 51 - 97 out of 97 < 1 2