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8460462 Method and an apparatus for growing a silicon single crystal from a melt  
Silicon single crystals are grown from the melt by providing the melt in a crucible; imposing a horizontal magnetic field on the melt; directing a gas between the single crystal and a heat shield...
7988784 Method for manufacturing III metal nitride single crystal  
It is used a substrate main body 1 having a side face 1b and a pair of main faces 1a and an underlying film 2 of a single crystal of a nitride of a metal belonging to the group III formed at least...
7799158 Method for producing crystallographically-oriented ceramic  
A method for producing a crystallographically-oriented ceramic includes the steps of forming a first sheet with a thickness of 10 μm or less containing a first inorganic material in which grain...
7351283 System and method for fabricating a crystalline thin structure  
A crystalline thin structure (104, 204, 404) is grown on a surface (108, 228) of a substrate (112, 208, 400) by depositing molecules (136, 220) from a molecular precursor to a lateral growth front...
7326294 Preparation of small crystals  
Small crystals are made by mixing a solution of a desired substance with an anti-solvent in a fluidic vortex mixer in which the residence time is less than 1s, for example 10 ms. The liquid within...
7118625 Liquid phase growth method for silicon crystal, manufacturing method for solar cell and liquid phase growth apparatus for silicon crystal  
With respect to a liquid phase growth method for a silicon crystal in which the silicon crystal is grown on a substrate by immersing the substrate in a solvent or allowing the substrate to contact...
7048797 Liquid-phase growth process and liquid-phase growth apparatus  
A liquid-phase growth process for continuously growing a crystal film on a plurality of substrates with respect to their one side surfaces, characterized in that said plurality of substrates are...
7022181 Liquid phase growth process, liquid phase growth system and substrate member production method  
In a liquid phase growth process comprising immersing a substrate in a melt held in a crucible, a crystal material having been dissolved in the melt, and growing a crystal on the substrate, at...
6946029 Sheet manufacturing method, sheet, sheet manufacturing apparatus, and solar cell  
An inexpensive sheet with excellent evenness and a desired uniform thickness can be obtained by cooling a base having protrusions, dipping the surfaces of the protrusions of the cooled base into a...
6273946 Method for production of multi-layered epitaxially grown crystal and apparatus therefor  
A used melt receptacle 40, a holder 60 for the alignment of crystalline substrates and a melt receptacle 20 are piled up in this order along a vertically extending central axis. A plurality of...
5907767 Backside-illuminated charge-coupled device imager and method for making the same  
Disclosed is a backside-illuminated charge-coupled device imager, which has: a silicon substrate which includes a light-receiving region which is formed on the frontside of the silicon substrate...
5683506 Method of manufacturing a bismuth-substituted rare earth iron garnet single crystal film for short wavelength  
A method of manufacturing a bismuth-substituted rare-earth iron garnet single crystal film used for short wavelengths, includes the steps of: manufacturing a BIG-grown substrate in an LPE furnace...
5603761 Liquid phase epitaxial growth method for carrying out the same  
In an improved liquid phase epitaxial growth method and apparatus in which a plurality of substrates are placed in a deposition chamber having at least one first vent hole; a solution for liquid...
5503103 Method and apparatus for producing crystalline layers  
A method for the formation of a layer on at least one substrate. A liquid, which contains the material for forming the layer, flows over the surface of the substrate of the substrate to be coated....
5385116 Method for producing organic crystal film  
A method for producing a crystal film of an organic compound from a molten liquid or solution of the organic compound on a substrate or between a pair of substrates, the substrate or at least one...
5366552 Apparatus for liquid-phase epitaxial growth  
A method and an apparatus capable of efficiently producing an epitaxial layer grown at one time on a multiplicity of substrates with uniform thickness and quality are disclosed, in which a...
5234534 Liquid-phase growth process of compound semiconductor  
A liquid-phase growth process of a compound semiconductor which is capable of effectively controlling the generation of a surface defect and improve the product quality and production yield is...
4968491 Apparatus for performing epitaxial growth of ZNSE crystal from melt thereof  
In conducting a liquid phase epitaxial growth of a Zn crystal on a substrate wherein a batch of Se melt serving as a solvent is used and relying on a vapor pressure controlling technique and a...
4906325 Method of making single-crystal mercury cadmium telluride layers  
A method of making symmetrical mercury cadmium telluride layers by epitaxial growth on a cadmium telluride substrate, performed inside a reactor with two communicating zones, kept at different and...
4828648 Liquid phase epitaxy apparatus and method  
An apparatus and method for performing liquid phase epitaxy, mercury containment, substrate leveling, in situ annealing/doping and gas flushing in a liquid phase epitaxy growth of HgCdTe. The...
4824520 Liquid encapsulated crystal growth  
Low-defect crystals are grown in a closed ampoule under a layer of encapsulant. After crystal growth, the crystal is separated from the melt and moved into the layer of encapsulant and cooled to a...
4572763 Method and apparatus for performing epitaxial growth of ZnSe crystal from a melt thereof  
In conducting a liquid phase epitaxial growth of a Zn crystal on a substrate wherein a batch of Se melt serving as a solvent is used and relying on a vapor pressure controlling technique and a...
4389274 Electrochemical deoxygenation for liquid phase epitaxial growth  
A method for removing residual oxygen from a growth solution prior to liq phase epitaxial crystal growth comprising the steps of disposing the materials in a containment vessel of a solid oxide...
4386975 Method for the manufacture of epitaxial Ga1-x Alx As:Si film  
The invention relates to a method and apparatus for manufacturing epitaxial Ga1-x Alx As:Si films via liquid-phase epitaxy, using a boat in a quartz tube. The Ga, which is contained in a graphite...
4300960 Method of making a light emitting diode  
A method of making a light emitting diode by a liquid phase epitaxial growth is disclosed, the method comprising the steps ofgrowing a first p-type epitaxial layer from a gallium melt containing...
4004953 Method for growing crystals of III-V compound semiconductors  
This invention relates to a method for growing semi-insulating III-V compound semiconductor crystals on a substrate by means of an epitaxially crystallizing process in the liquid state, which...
3997377 Method of making a liquid phase epitaxial-layers of gallium phosphide on multiple wafers  
A method of making a liquid phase epitaxial layer of gallium phosphide on each of two semiconductor wafers which are disposed above and below each other in parallel, and at a predetermined distance.
3936328 Process of manufacturing semiconductor devices  
A cylindrical substrate of semiconductive material is repeatedly incised by a saw to be formed with many parallel grooves while it has one portion of the peripheral portion remaining uncut...
3929525 Method of forming ohmic contacts  
A contact of an indium gallium arsenide alloy forms an ohmic contact with a body of n-type or p-type single crystal gallium arsenide of a resistivity of 1 ohm-cm or greater. The method for forming...
3915661 Process and apparatus for growth of crystals  
Process and apparatus are provided for the growth of large, defect-free crystals from a flux comprising a solvent saturated with dissolved crystal-producing material. The large, defect-free...
3893875 Method of making a luminescent diode  
A method of making a luminescent diode comprising providing gallium phosphide substrate having an impurity donor which can be sulfur or tellurium with a melt of gallium-gallium phosphide solution,...
3870575 FABRICATING A GALLIUM PHOSPHIDE DEVICE  
With the method of this invention a layer of gallium phosphide is formed of liquid phase epitaxy. In this invention an N-type gallium phosphide substrate and a melt of gallium-gallium phosphide...
3859148 EPITAXIAL CRYSTAL GROWTH OF GROUP III-V COMPOUND SEMICONDUCTORS FROM SOLUTION  
Epitaxial layers of Group III-V compound semiconductor materials are grown from solution simultaneously on several substrate wafers. The wafers are held in the growth vessel in pairs, contacting...
3837911 MAGNETIC DEVICES UTILIZING GARNET EPITAXIAL MATERIALS AND METHOD OF PRODUCTION  
Magnetic garnet compositions grown by liquid phase epitaxy have appropriate magnetic properties for use in bubble domain devices - a class of magnetic devices in which information is represented...
3791887 LIQUID-PHASE EPITAXIAL GROWTH UNDER TRANSIENT THERMAL CONDITIONS  
Thin epitaxial layers of material are grown on a substrate from a saturated solution of a solute dissolved in a metal solvent. The solute and solvent are first mixed and then heated to produce the...
3785884 METHOD FOR DEPOSITING A SEMICONDUCTOR MATERIAL ON THE SUBSTRATE FROM THE LIQUID PHASE  
A layer of a semiconductor material is epitaxially deposited on a substrate by liquid phase epitaxy wherein a heated solution of the semiconductor material dissolved in a molten solvent is brought...
3762943 PROCEDURE AND PREPARATION FOR THE PRODUCTION OF HOMOGENEOUS AND PLANE PARALLEL EPITACTIC GROWTH LAYERS OF SEMICONDUCTING COMPOUNDS BY MELT EPITAXY  
Process and apparatus for preparing doped plane parallel epitactic growth layers of semiconducting compounds, especially GaAs, by melt epitaxy, using a non-stoichiomecric metal melt. A thick...
3755013 LIQUID SOLUTION METHOD OF EPITAXIALLY DEPOSITING A SEMICONDUCTOR COMPOUND  
The invention relates to a method of epitaxially depositing a semiconductor compound from a saturated solution on a substrate. The temperature at the interface substrate-saturated solution is...
3713900 METHOD FOR MAKING UNIFORM SINGLE CRYSTAL SEMICONDUCTORS EPITAXIALLY  
A liquid epitaxial method for growing single crystal semiconductors, such as gallium arsenide, having a substantially uniform three-dimensional impurity distribution. A melt of the epitaxial...
3632431 METHOD OF CRYSTALLIZING A BINARY SEMICONDUCTOR COMPOUND  
A method of crystallizing a binary semiconductor compound from a liquid solution of the compound in one of its components, e.g. gallium arsenide in gallium. A small quantity of an element of the...
3619304 METHOD OF MANUFACTURING GALLIUM PHOSPHIDE ELECTRO LUMINESCENT DIODES  
A gallium phosphide electro luminescent diode is fabricated by contacting molten gallium containing gallium phosphide, an N-type impurity and oxygen with a P-type gallium phosphide substrate and...
3615856 GERMANIUM-TIN ALLOY INFRARED DETECTOR  
An infrared radiation detector useful at room temperature includes an epitaxial, germanium-tin alloy grown by liquid phase epitaxy with a concentration of tin greater than 2.5 atomic percent.
3607463 METHOD FOR GROWING TIN-DOPED N-TYPE EPITAXIAL GALLIUM ARSENIDE FROM THE LIQUID STATE  
A charge consisting of gallium, gallium arsenide, and tin was heated to produce a liquid molten solution of gallium, arsenic, and tin with the atom fraction of tin being below 80 percent in the...
3551219 EPITAXIAL GROWTH TECHNIQUE  
3549401 METHOD OF MAKING ELECTROLUMINESCENT GALLIUM PHOSPHIDE DIODES  
3536538 CRYSTAL GROWTH TECHNIQUE  
3705825 GROWTH LAYER OF SEMICONDUCTOR COMPOUNDS PRODUCED BY MELT EPITAXY  
3697330 LIQUID EPITAXY METHOD AND APPARATUS  
3692592 METHOD AND APPARATUS FOR DEPOSITING EPITAXIAL SEMICONDUCTIVE LAYERS FROM THE LIQUID PHASE  
3810794 PREPARATION OF GAP-SI HETEROJUNCTION BY LIQUID PHASE EPITAXY  

Matches 1 - 50 out of 63 1 2 >