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8940095 Apparatus for growth of single crystals including a solute feeder  
An apparatus for growth of uniform multi-component single crystals is provided. The single crystal material has at least three elements and has a diameter of at least 50 mm, a dislocation density...
8540035 Extendable cutting tools for use in a wellbore  
Embodiments of the present invention generally relate to extendable cutting tools for use in a wellbore. In one embodiment, a tool for use in a wellbore includes a tubular body having a bore...
7615115 Liquid-phase growth apparatus and method  
A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a raw material for forming the crystal, and a substrate holder for...
7351283 System and method for fabricating a crystalline thin structure  
A crystalline thin structure (104, 204, 404) is grown on a surface (108, 228) of a substrate (112, 208, 400) by depositing molecules (136, 220) from a molecular precursor to a lateral growth front...
7048797 Liquid-phase growth process and liquid-phase growth apparatus  
A liquid-phase growth process for continuously growing a crystal film on a plurality of substrates with respect to their one side surfaces, characterized in that said plurality of substrates are...
7022181 Liquid phase growth process, liquid phase growth system and substrate member production method  
In a liquid phase growth process comprising immersing a substrate in a melt held in a crucible, a crystal material having been dissolved in the melt, and growing a crystal on the substrate, at...
6902619 Liquid phase epitaxy  
The invention provides a method of growing semiconductor epitaxial layers on a substrate comprising the steps of providing a substrate,providing at least a first growth solution and optionally one...
6197110 Mass production of silicon dioxide film by liquid phase deposition method  
A liquid phase deposition method of mass producing substantially uniform silicon dioxide films on wafers by forming wafer sets from at least four wafers. The wafer sets are placed in a slotted...
5985023 Method for growth of a nitrogen-doped gallium phosphide epitaxial layer  
While a nitrogen-doped gallium phosphide epitaxial layer in an epitaxial wafer as a material of light-emitting diodes is desired to have a high concentration of nitrogen in order to enhance the...
5922126 Semiconductor liquid phase epitaxial growth method and apparatus, and its wafer holder  
The disclosed semiconductor liquid phase epitaxial growth method and apparatus and the wafer holder used therefor can improve the deposition of polycrystal, the non-uniformity of film thickness,...
5603761 Liquid phase epitaxial growth method for carrying out the same  
In an improved liquid phase epitaxial growth method and apparatus in which a plurality of substrates are placed in a deposition chamber having at least one first vent hole; a solution for liquid...
5525539 Method for forming a light emitting diode for use as an efficient emitter or detector of light at a common wavelength  
An infrared LED can function efficiently as both an emitter and a detector at a common wavelength without undesirable characteristics found in avalanche diodes. The LED comprises a graded-bandgap...
5482555 Liquid-phase epitaxy growth system and method for growing epitaxial layer  
A liquid-phase epitaxy system having an LPE boat which consists of a slider section, a source holder section, and a contacting well section, in which the distance between the first two contacting...
5401684 Method of manufacturing a light-emitting semiconductor device substrate  
Disclosed are a light-emitting semiconductor device substrate and a method of manufacturing the same. The substrate is prepared by causing a Ga1-x Alx As compound semiconductor single crystalline...
5130270 Hetero-epitaxial liquid phase growth method  
A hetero-epitaxial liquid phase growth method for growing a compound semiconductor by liquid phase epitaxy includes placing a melt in a closed melt boat on a substrate and epitaxially growing a...
5064780 Method of obtaining a ternary monocrystalline layer by means of hetero-epitaxy on a binary layer and a crucible suitable for putting the method into effect  
The invention relates to a method of obtaining by heteroepitaxy a monocrystalline layer of a ternary compound on a monocrystalline substrate of a binary composition, in which a saturated solution...
4918029 Method for liquid-phase thin film epitaxy  
A device and method for liquid-phase thin film epitaxial growth are disclosed wherein yield and quality of semiconductors in the fabrication sequences are improved. The device comprises an...
4906325 Method of making single-crystal mercury cadmium telluride layers  
A method of making symmetrical mercury cadmium telluride layers by epitaxial growth on a cadmium telluride substrate, performed inside a reactor with two communicating zones, kept at different and...
4872943 Process for making monocrystalline HGCDTE layers  
A process for making single-crystal mercury cadmium telluride layers by epitaxial growth on a cadmium telluride substrate, performed inside a reactor with two communication zones, kept at...
4859628 Interrupted liquid phase epitaxy process  
An interrupted liquid phase epitaxy process for producing distributed feedback laser wafers involves epitaxial growth at a first temperature range followed by epitaxial growth at a second higher...
4778478 Method of making thin film photovoltaic solar cell  
Solar cell quality semiconductors are grown using a constant temperature sliding boat liquid phase process in a continuous or semi-continuous mode. The growth is driven by applying a temperature...
4702781 Liquid phase epitaxial growth method  
Disclosed is a liquid phase epitaxial growth method using a slider having a recess which receives a semiconductor substrate, and a growth boat having a solution holder which holds plural kinds of...
4642142 Process for making mercury cadmium telluride  
Mercury cadmium telluride (Hg1-x Cdx Te) is formed from an atmosphere of mercury vapor maintained at a temperature of within about 1° C. of a desired temperature which contacts a liquid...
4620897 Method for growing multicomponent compound semiconductor crystals  
A method and apparatus for growing crystals of a more than three multicomponents compound semiconductor from its growth solution in which a source material containing at least one solute element...
4609411 Liquid-phase epitaxial growth method of a IIIb-Vb group compound  
The reproducibility of Te doping in III-V group compounds is improved by using as the dopant a III-V group compound containing Te at a concentration of at least 1×1017 cm-3.
4594126 Growth of thin epitaxial films on moving substrates from flowing solutions  
An apparatus and method for the growth of thin epitaxial layers on crystalline substrates. A portion of the growth surface of a substrate held at temperature T2 is contacted with a solution with a...
4575742 Epitaxial wafer for use in the production of an infrared LED  
The present invention relates to a wafer for use in the production of an infrared LED. Conventionally, infrared LEDs are produced by using an epitaxial wafer comprising P- and N-type GaAs...
4566934 Cleaning technique for LPE melt ingots  
In the liquid phase epitaxy growth of Group III-V compound semiconductors using boat-slider apparatus, melt-carry-over is essentially eliminated by prebaking the metallic solvent (e.g., In shot)...
4565156 Apparatus for performing solution growth relying on temperature difference technique  
A solution growth apparatus for conducting an epitaxial growth of a compound semiconductor crystal from solution by relying on the temperature difference technique at a constant growth temperature...
4504328 Liquid phase epitaxial growth technique  
A first growth melting solution which has been used for the growth of a first layer is first replaced with a third melting solution and then with a second growth melting solution for the growth of...
4470368 LPE Apparatus with improved thermal geometry  
In LPE boat-slider apparatus the boat, which carries the melts, is made of lower thermal conductivity material than the slider, which carries the substrate. Illustratively, the boat comprises...
4427464 Liquid phase epitaxy  
A method of liquid phase epitaxy is disclosed for growing a plurality of different layers on each of a plurality of semiconductor wafers during a single heating cycle. Each of a series of melts,...
4366009 Method of manufacturing semiconductor structures by epitaxial growth from the liquid phase  
In manufacturing a semiconductor device by epitaxial growth from the liquid phase on a substrate of layers of gallium arsenide or gallium aluminum arsenide doped with elements such as germanium,...
4357897 Device for epitaxially providing a layer of semiconductor material  
A liquid-phase epitaxial growth device has a reservoir holder (1), a slider (14) movably mounted below the reservoir holder to enable each reservoir (2, 3, 4, 5) to be selectively uncovered so as...
4347097 Method and apparatus for producing a multilayer semiconductor device utilizing liquid growth  
A method for performing successive mass production of identical semiconductor devices each having a multi-layer structure consisting of a plurality of epitaxial layers successively deposited on a...
4342148 Contemporaneous fabrication of double heterostructure light emitting diodes and laser diodes using liquid phase epitaxy  
In the manufacture of double heterostructure laser diodes using liquid phase epitaxy a source crystal precedes the laser substrate crystal through the process to ensure saturation of the various...
4339302 Semiconductor materials  
A Group III element Q selected from gallium, indium and thallium containing a Group VI element X selected from oxygen, sulphur, selenium and tellurium as an impurity can be purified by adding, to...
4315796 Crystal growth of compound semiconductor mixed crystals under controlled vapor pressure  
A compound semiconductor mixed crystal is grown by causing semiconductor-constituent material to travel, in dissolved liquid phase, through a solution having a portion contacting the source...
4298410 Method for growing a liquid phase epitaxial layer on a semiconductor substrate  
A method for selectively growing a liquid phase epitaxial layer on a semiconductor substrate comprises a first step of supplying a liquid phase epitaxial solution in a chamber of an upper body and...
4274890 Method for the epitaxial manufacture of a semiconductor device having a multi-layer structure  
A method is provided of manufacturing, on a substrate of a binary compound, layers of ternary or quaternary compounds in which epitaxial intermediate layers separate the substrate from the end...
4268327 Method for growing semiconductor epitaxial layers  
A method for growing semiconductor epitaxial layers for manufacturing semiconductor devices such as light emitting diodes, characterized by using a single tub for containing a solution comprising...
4261770 Process for producing epitaxial semiconductor material layers on monocrystalline substrates via liquid phase shift epitaxy  
A process for producing epitaxial semiconductor material layers on monocrystalline substrates via liquid phase shift epitaxy wherein, in order to avoid bead-growth on a substrate, at least the...
4235191 Apparatus for depositing materials on stacked semiconductor wafers  
In certain manufacturing operations materials are deposited onto semiconductor wafers. For example, in liquid-phase epitaxial melt deposition, wafers are exposed to a melt having constituents...
4218269 Method for the epitaxial deposition of several layers  
A method of manufacturing a semiconductor device having a monocrystalline substrate and a plurality of epitaxial layers successively deposited on the substrate is disclosed. The device is...
4179317 Method for producing compound semiconductor crystals  
A method for producing III-V compound semiconductor crystals using a liquid phase epitaxial growth, in which the crystal growth is achieved in a state in which a single crystal of the same...
4159694 Apparatus for depositing epitaxial semiconductor from the liquid phase  
A furnace boat has a plurality of wells therein. A first slide movably extends through the boat along and across the bottom of the wells. The first slide carries a substrate on which layers of...
4149914 Method for depositing epitaxial monocrystalline semiconductive layers via sliding liquid phase epitaxy  
A method of depositing a plurality of epitaxial monocrystalline layers of semiconductive materials onto an individual substrate of a plurality of substrates via the sliding liquid phase epitaxy...
4131904 Degradation resistance of semiconductor electroluminescent devices  
The P type conductivity layer or layers of an electroluminescent device includes zinc as the primary conductivity modifier, and germanium as the secondary conductivity modifier. The combination of...
4126930 Magnesium doping of AlGaAs  
Aluminum gallium arsenide is used as a transparent, conducting contact layer on the exposed surface of a gallium arsenide photovoltaic cell. Increased conductivity for the high current generated...
4123302 Method for depositing epitaxial semiconductor from the liquid phase  
A furnace boat has a plurality of wells therein. A first slide movably extends through the boat along and across the bottom of the wells. The first slide carries a substrate on which layers of...

Matches 1 - 50 out of 88 1 2 >