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8052793 Method for producing silicon carbide single crystal  
A method for producing a silicon carbide single crystal, which comprises bringing a silicon carbide single crystal substrate into contact with a melt prepared by melting a raw material containing...
8002893 Apparatus for pulling single crystal by CZ method  
In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are...
7875115 Epitaxial wafer and method for producing epitaxial wafers  
This disclosure is aimed at providing a method for producing an epitaxial wafer allowing uniform occurrence of oxygen precipitate in a substrate plane in the radial direction in a base plate and...
7704318 Silicon wafer, SOI substrate, method for growing silicon single crystal, method for manufacturing silicon wafer, and method for manufacturing SOI substrate  
When growing a silicon single crystal free of grown-in defects based on the CZ method, the crystal is pulled out at a critical pulling rate at which a ring-shaped OSF occurrence region vanishes in...
7605062 Doped nanoparticle-based semiconductor junction  
A doped semiconductor junction for use in an electronic device and a method for making such junction is disclosed. The junction includes a first polycrystalline semiconductor layer doped with...
7517406 Magnetic garnet material, faraday rotator, optical device, bismuth-substituted rare earth-iron-garnet single-crystal film and method for producing the same and crucible for producing the same  
Proposed is a technique of producing a magnetic garnet material of which the light absorption characteristics worsen little even though it is produced through LPE. The crucible for LPE is formed of...
7494903 Doped nanoparticle semiconductor charge transport layer  
A method is disclosed for making a doped semiconductor transport layer for use in an electronic device comprising: growing in-situ doped semiconductor nanoparticles in a colloidal solution;...
7375011 Ex-situ doped semiconductor transport layer  
A method of making an ex-situ doped semiconductor transport layer for use in an electronic device includes: growing a first set of semiconductor nanoparticles having surface organic ligands in a...
7351283 System and method for fabricating a crystalline thin structure  
A crystalline thin structure (104, 204, 404) is grown on a surface (108, 228) of a substrate (112, 208, 400) by depositing molecules (136, 220) from a molecular precursor to a lateral growth front...
7294200 Method for producing nitride semiconductor crystal, and nitride semiconductor wafer and nitride semiconductor device  
A method for producing a nitride semiconductor crystal comprising steps (a), (b) and (c), which steps follow in sequence as follows: a step (a) for forming fine crystal particles made of a nitride...
7077901 Process for producing single crystal silicon wafers  
A process for producing a single crystal silicon wafer, comprising the steps of forming a porous layer on a single crystal silicon substrate comprising a silicon whose concentration of mass number...
7048797 Liquid-phase growth process and liquid-phase growth apparatus  
A liquid-phase growth process for continuously growing a crystal film on a plurality of substrates with respect to their one side surfaces, characterized in that said plurality of substrates are...
6951585 Liquid-phase growth method and liquid-phase growth apparatus  
A liquid-phase growth method for immersing a polycrystalline substrate in a melt in a crucible wherein crystal ingredients are dissolved, thereby growing poly crystals upon the substrate, comprises...
6902619 Liquid phase epitaxy  
The invention provides a method of growing semiconductor epitaxial layers on a substrate comprising the steps of providing a substrate,providing at least a first growth solution and optionally one...
6875270 Magnetic garnet single-crystal film and method of producing the same, and Faraday rotator comprising the same  
The invention relates to a Bi-substituted rare earth-iron garnet single-crystal film and a method for producing it, and also to a Faraday rotator comprising it. Its object is to provide a magnetic...
6542299 Material for bismuth substituted garnet thick film and a manufacturing method thereof  
A material for a bismuth substituted garnet thick film comprising Gd, Yb, Bi, Fe and Al as the main ingredient grown by a liquid phase growing method on a garnet substrate in which the composition...
6440212 Low cost method for making thermoelectric coolers  
A process of making thermoelectric coolers by direct printing of n- and p-type semiconductor materials suitable for making thermoelectric coolers is disclosed. Micro Jet Printing of arrays on n and...
6059878 Method of manufacturing a bismuth-substituted rare-earth iron garnet single crystal film  
A method is used when manufacturing a bismuth-substituted rare-earth iron garnet single crystal (BIG) film by the LPE method. The BIG film is grown on one side of a non-magnetic garnet substrate...
5985023 Method for growth of a nitrogen-doped gallium phosphide epitaxial layer  
While a nitrogen-doped gallium phosphide epitaxial layer in an epitaxial wafer as a material of light-emitting diodes is desired to have a high concentration of nitrogen in order to enhance the...
5817530 Use of conductive lines on the back side of wafers and dice for semiconductor interconnects  
An apparatus and a method for increasing integrated circuit density comprising semiconductor wafers, wafer portions or dice ("semiconductor elements") having conductive traces on the back side...
5725658 Heat-treatment method of groups III-V compound semiconductor materials  
When a film is formed on a wafer of groups III-V compound semiconductors by heating, slips are formed in the periphery of the wafer because of residual inner stress of the wafer. The quality of an...
5707891 Method of manufacturing a light emitting diode  
A method of manufacturing a light emitting diode, which includes the steps of bringing a semiconductor substrate of p-type or n-type into contact with a growth solution at a high temperature and...
5654229 Method for replicating periodic nonlinear coefficient patterning during and after growth of epitaxial ferroelectric oxide films  
A method for providing an nonlinear, frequency converting optical QPM waveguide device by growing a first ferroelectric oxide film or layer on a second ferroelectric layer or medium wherein, in...
5650006 Process for producing a lithium niobate-lithium tantalate single crystal substrate  
A film made of lithium niobate-lithium tantalate solid solution may be formed on a single crystal substrate having a composition of LiNb1-z Taz O3 (0≤z<0.8) by the liquid phase epitaxial process. T...
5643827 GaP light emitting substrate and a method of manufacturing it  
A GaP light emitting element substrate comprising an n-type GaP layer, a nitrogen-doped n-type GaP layer and a p-type GaP layer layered one after another on a multi-layer GaP substrate built by...
5603761 Liquid phase epitaxial growth method for carrying out the same  
In an improved liquid phase epitaxial growth method and apparatus in which a plurality of substrates are placed in a deposition chamber having at least one first vent hole; a solution for liquid...
5571321 Method for producing a gallium phosphide epitaxial wafer  
This disclosure herein pertains to a method for producing a GaP epitaxial wafer used for fabrication of light emitting diodes having higher brightness than light emitting diodes fabricated from a...
5529938 Method for producing light-emitting diode  
A method for producing a light-emitting diode provided with a pn junction of GaP containing nitrogen on an n-type GaP substrate, includes the steps of: forming an n-type GaP layer on the n-type GaP...
5518934 Method of fabricating multiwavelength infrared focal plane array detector  
A multiwavelength local plane array infrared detector is included on a common substrate having formed on its top face a plurality of Inx Ga1-x As (x≤0.53) absorption layers, between each pair of w...
5513593 Liquid-phase heteroepitaxy method  
To produce a layer by liquid-phase heteroepitaxy a molten metal serving as the solvent is saturated at a first temperature with substrate material and compounded with layer material. The solution...
5512511 Process for growing HgCdTe base and contact layer in one operation  
A method for fabricating a two layer epitaxial structure by a liquid phase epitaxy (LPE) process, the structure being comprised of a Group II-VI semiconductor material. The method includes the...
5503103 Method and apparatus for producing crystalline layers  
A method for the formation of a layer on at least one substrate. A liquid, which contains the material for forming the layer, flows over the surface of the substrate of the substrate to be coated....
5407858 Method of making gap red light emitting element substrate by LPE  
To provide a GaP red light emitting element substrate which a large amount of oxygen is doped in the p-type GaP layer, and which very few Ga2 O3 precipitates develop on and/or in p-type GaP layer,...
5397736 Liquid epitaxial process for producing three-dimensional semiconductor structures  
By a liquid epitaxial process monocrystalline semiconductor layers are produced having a high degree of crystal perfection in a multi-layer arrangement on intermediate layers of an insulating...
5356509 Hetero-epitaxial growth of non-lattice matched semiconductors  
A method for growing a compound semiconductor, such as GaAs or InP, on a non-lattice matched substrate, such as Si, utilizes close-spaced vapor transport to deposit nucleation enhancing interlayer...
5332451 Epitaxially grown compound-semiconductor crystal  
An epitaxially grown compound-semiconductor crystal comprising a substrate, a buffer layer formed directly or indirectly on the substrate, and an active layer formed on the buffer layer. The buffer...
5326716 Liquid phase epitaxial process for producing three-dimensional semiconductor structures by liquid phase expitaxy  
The present invention relates to a new application of the liquid epitaxial method, especially the manufacturing of epitaxial monocrystalline semiconductor layers having high crystalline perfection...
5209917 Lithium niobate single crystal thin film and production method thereof  
A lithium niobate single crystal thin film formed on a lithium tantalate substrate, in which the a-axis lattice constant of the lithium tantalate substrate and the a-axis lattice constant of the...
5185288 Epitaxial growth method  
An electro-optical device with a transparent substrate is produced by epitaxially first growing the device layers, followed by that of the transparent substrate layer on an opaque wafer. The opaque...
5141894 Method for the manufacture, by epitaxy, of monocrystalline layers of materials with different lattice parameters  
A method for the manufacturing, by epitaxy, of monocrystalline layers of materials with different lattice parameters that includes: a first step for the epitaxial deposition, on a first layer made...
5139998 Controlled thallous oxide evaporation for thallium superconductor films and reactor design  
Methods and reactors are described for the production of thallium cuprate based high temperature superconductor films on a variety of substrates. The reactors provide for low volume cavities, means...
5134091 Quantum effective device and process for its production  
A quantum effective device and its method of manufacture are disclosed, wherein said device comprises quantum well boxes composes of a semiconductor substrate and a compound semiconductor on the...
5064780 Method of obtaining a ternary monocrystalline layer by means of hetero-epitaxy on a binary layer and a crucible suitable for putting the method into effect  
The invention relates to a method of obtaining by heteroepitaxy a monocrystalline layer of a ternary compound on a monocrystalline substrate of a binary composition, in which a saturated solution...
4960720 Method of growing compound semiconductor thin film using multichamber smoothing process  
In molecular beam epitaxial growth of GaAs substrate, a compound semiconductor thin film having Ga and As is grown by Ga beam and As beam in MBE chamber and then the substrate is transferred to an...
4938166 Device for growing multi-layer crystals employing set of masking elements with different aperature configurations  
Disclosed is a device for making multi-layer crystals. It includes a holder and a plurality of masking elements adapted to be secured successively to the holder. The masking elements have cover...
4921817 Substrate for high-intensity led, and method of epitaxially growing same  
A substrate for a high-intensity LED and the method of epitaxially growing the substrate according to the invention are based on the fact that, in using an AuZn alloy or the like as the ohmic...
4902356 Epitaxial substrate for high-intensity led, and method of manufacturing same  
An epitaxial layer having a double-hetero structure is forming using an MOCVD process or an MBE process, and an epitaxial substrate is formed using an LPE process, thereby forming a substrate which...
4804639 Method of making a DH laser with strained layers by MBE  
A method of making a semiconductor laser from a gallium arsenide substrate of a first conductivity type by depositing a first layer of semiconductor material having the composition Alx Ga1-x As of...
4716129 Method for the production of semiconductor devices  
A method for the production of semiconductor devices, using liquid phase epitaxy of semiconductors of Groups III to V of the periodic table, in which on a Te-doped first layer, a second layer...
4695332 Method of making a semiconductor laser CRT  
Room temperature laser action is achieved in a cathode ray tube (CRT) in which the target includes a plurality of semiconductor layers: a thin, wide bandgap buffer layer; a thicker, narrow bandgap...
Matches 1 - 50 out of 146 1 2 3 >