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7591897 Method for the rapid synthesis of large quantities of metal oxide nanowires at low temperatures  
A process for the rapid synthesis of metal oxide nanoparticles at low temperatures and methods which facilitate the fabrication of long metal oxide nanowires. The method is based on treatment of...
7445671 Formation of metal oxide nanowire networks (nanowebs) of low-melting metals  
A method of producing networks of low melting metal oxides such as crystalline gallium oxide comprised of one-dimensional nanostructures. Because of the unique arrangement of wires, these...
7431766 Crystal-structure-processed devices, methods and systems for making  
Processing and systems to create, and resulting products related to, very small-dimension singular, or monolithically arrayed, mechanical devices. Processing is laser-performed in relation to a...
7422632 Epitaxial growth of structures with nano-dimensional features from liquid phase by pulse cooling of substrate  
The features with size at least in one direction 1 μm growth method was developed by modifying liquid phase epitaxy. Number of processes was developed where duration and amplitude of the cooling...
7384476 Method for crystallizing silicon  
A method for crystallizing silicon is provided. The method includes: forming an amorphous silicon layer on a substrate; aligning a mask above the substrate, the mask being divided into a plurality...
7326294 Preparation of small crystals  
Small crystals are made by mixing a solution of a desired substance with an anti-solvent in a fluidic vortex mixer in which the residence time is less than 1s, for example 10 ms. The liquid within...
7300518 Apparatus and method for producing single crystal, and silicon single crystal  
The invention provides an apparatus for producing a single crystal, and a method for producing a silicon single crystal using the same. An apparatus for producing a single crystal includes a...
7288152 Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the same  
The present invention provides a manufacturing method in which high quality GaN crystals and GaN crystal substrates can be manufactured under mild conditions of low pressure and low temperature. In...
7192481 Radiation detector  
A radiation detector made from a compound, or alloy, comprising CdxZn1−xTe (0=x=1), Pb in a concentration between 10 and 10,000 atomic parts per billion and at least one element selected from the...
7153359 Crystalline semiconductor film and production method thereof, and semiconductor device and production method thereof  
A crystalline semiconductor film, the crystalline semiconductor film being formed over an insulative substrate, and including semiconductor crystal grains laterally grown along a surface of the...
7135070 Monolithic stacked/layered crystal-structure-processed mechanical, and combined mechanical and electrical, devices and methods and systems for making  
Monolithic stacked/layered room-temperature-processed materials whose internal crystalline structures are laser modification to create arrays of mechanical, and combined mechanical and electrical,...
7128783 Thin-film crystal-structure-processed mechanical devices, and methods and systems for making  
Thin-film laser-effected internal crystalline structure modified materials suitable for the creation of various small-dimension mechanical devices, either singly or in monolithic arrays, such as...
7125451 Crystal-structure-processed mechanical devices and methods and systems for making  
Laser processing of various materials to create mechanical devices whose internal mechanical properties are provided in final useable form by adjustments made in internal crystalline structure.
7105048 Laser irradiation apparatus  
Each region, which should be left on a substrate after patterning, of a semiconductor film is grasped in accordance with a mask. Then, each region to be scanned with laser light is determined so...
6860939 Semiconductor crystal-structure-processed mechanical devices, and methods and systems for making  
Processing and systems to create, and resulting products related to, very small-dimension singular, or monolithically arrayed, semiconductor mechanical devices. Processing is laser performed on...
6113685 Method for relieving stress in GaN devices  
An improved method for growing a first layer on a second layer in which the first and second layers have different thermal indices of expansion and/or a mismatch of the lattice constants and the...
5893948 Method for forming single silicon crystals using nucleation sites  
The invention provides a method for forming a plurality of single silicon crystals over a substrate. The method forms a plurality of nucleation sites over the substrate. An amorphous silicon layer...
5741359 Method and apparatus for zone-melting recrystallization of semiconductor layer  
An apparatus for zone-melting recrystallization of a semiconductor layer includes a first heater, on which a semiconductor wafer including the semiconductor layer and upper and lower insulating...
5733641 Buffered substrate for semiconductor devices  
The invention provides a buffered substrate that includes a substrate, a buffer layer and a silicon layer. The buffer layer is disposed between the substrate and the silicon layer. The buffer layer...
5467731 Method of producing a semiconductor structure including a recrystallized film  
A method for producing a semiconductor structure including a semiconductor film formed on a semiconductor substrate body via an insulating film includes: laminating a first insulating film, a first...
5431126 Method of forming semiconductor crystal and semiconductor device  
A thin semiconductor film having at least one an edge is formed on a base whose material is different from the material of the thin semiconductor film. A laser beam, for example, is applied to the...
5409867 Method of producing polycrystalline semiconductor thin film  
After partially crystallizing an amorphous semiconductor deposited on a substrate, the irradition of infrared ray is conducted to grow a polycrystalline semiconductor layer on the crystallized...
5397735 Process for hardening active electronic components against ionizing radiations, and hardened components of large dimensions  
The invention relates to the "hardening" (resistance to ionizing radiations) of MOS-type components. In order to avoid the effects of these radiations (creation of electron-hole pairs), there is...
5186785 Zone melted recrystallized silicon on diamond  
In silicon-on-diamond (SOD) technology, diamond replaces the silicon-dioxide in the silicon-on-insulator structure. Diamond is good thermal conductor unlike silicon dioxide and a good electrical...
5094714 Wafer structure for forming a semiconductor single crystal film  
A wafer structure for forming a semiconductor single crystal film comprises a semiconductor single crystal substrate, a plurality of recesses formed in a grooved shape to one main surface of the...
5061655 Method of producing SOI structures  
A method of producing so-called SOI structures according to this invention includes the step of forming an opening for seeding after an insulating layer of predetermined thickness has been formed...
5057452 Method of manufacturing a semiconductor device  
The invention relates to a method of manufacturing a semiconductor device in which a polycrystalline or amorphous silicon oxide layer 3, which is provided on a silicon oxide layer 2 on a...
5032538 Semiconductor embedded layer technology utilizing selective epitaxial growth methods  
A permeable base transistor (30) including a metal base layer (34) embedded in a semiconductor crystal (32) to separate collector (38) and emitter (40) regions and form a Schottky barrier with each...
4944835 Seeding process in zone recrystallization  
An improved method of forming seed openings for zone-melting and recrystallization of polysilicon film on an insulator over silicon (SOI) is described. This method comprises forming a narrow...
RE33096 Semiconductor substrate  
A semiconductor substrate including a single-crystal mono-crystalline film on an insulating film and methods of fabrication are provided. The insulating film has an opening to expose the...
4855014 Method for manufacturing semiconductor devices  
Disclosed is a method of manufacturing semiconductor devices, in which a monocrystalline thin film is formed by dissolving and recrystallizing either amorphous or polycrystalline thin film by...
4801351 Method of manufacturing monocrystalline thin-film  
Improvements in a method for performing a monocrystallizing operation through the application of energy beams upon a non-monocrystalline thin-film of non-crystalline or polycrystalline material...
4773964 Process for the production of an oriented monocrystalline silicon film with localized defects on an insulating support  
This process consists of producing in the insulating support a periodic configuration which, in the form of regularly spaced parallel insulating strips, has overhanging and recessed parts, the...
4751193 Method of making SOI recrystallized layers by short spatially uniform light pulses  
Method is provided for manufacturing large crystalline and monocrystalline semiconductor-on-insulator devices.
4707217 Single crystal thin films  
A system and techniques are disclosed for forming single crystal films with the use of energy sources that can create shaped hot zones. The energy may be from any source provided that it can be...
4678538 Process for the production of an insulating support on an oriented monocrystalline silicon film with localized defects  
Process for the production of an oriented monocrystalline silicon film with localized defects on an insulating support. This process consists of covering a monocrystalline silicon support of...
4670088 Lateral epitaxial growth by seeded solidification  
An improved method and apparatus for crystallizing amorphous or polycrystalline material is disclosed. In this invention, a material which is to be crystallized is formed on a substrate and single...
4670086 Process for the growth of structures based on group IV semiconductor materials  
Single crystal layers of Group IV semiconductor materials, such as silicon, are grown on insulating substrates. The fabrication of this structure is achieved by forming on a single crystal...
4659422 Process for producing monocrystalline layer on insulator  
A process for producing a monocrystalline layer on an insulator, particularly in a semiconductor wafer adapted for use to produce large-scale integrated circuits, comprising the steps of providing...
4632723 Orientation filtering for crystalline films  
A substrate is coated with a film to be recrystallized. A pattern of crystallization barriers is created in the film, for example, by etching voids in the film. An encapsulation layer is generally...
4604159 Method of forming a large number of monocrystalline semiconductor regions on the surface of an insulator  
Disclosed is a method of forming a large number of monocrystalline silicon regions, of uniform orientation, on the surface of an insulator material. Initially, a large number of island regions of...
4599133 Method of producing single-crystal silicon film  
On a semiconductor substrate surface, a plurality of polycrystalline or amorphous silicon films and a plurality of insulator films which are substantially transparent to an irradiating energy beam...
4592799 Method of recrystallizing a polycrystalline, amorphous or small grain material  
For recrystallizing a layer of polysilicon extending over a layer of silicon dioxide on a substrate of silicon single crystal, the silicon dioxide layer is interrupted at seeding locations which...
4578143 Method for forming a single crystal silicon layer  
Disclosed herein is a process for forming a single crystal silicon layer by heating a wafer, which is made of a single crystal silicon substrate and a starting silicon layer made of amorphous or...
4578144 Method for forming a single crystal silicon layer  
Disclosed herein is a process for forming a singlecrystalline silicon layer by heating a wafer having a starting silicon layer of amorphous or polycrystalline silicon on the singlecrystalline...
4576676 Thick crystalline films on foreign substrates  
To achieve a uniform texture, large crystalline grains or, in some cases, a single crystalline orientation in a thick (>1 μm) film on a foreign substrate, the film is formed so as to be thin...
4569700 Method of manufacturing a stacked semiconductor device  
The invention provides a stacked semiconductor device having a plurality of monocrystalline semiconductor films of the same material which are formed on a monocrystalline semiconductor substrate...
4564403 Single-crystal semiconductor devices and method for making them  
A large, single-crystal semiconductor device is made from a substrate having a layer of polycrystalline or amorphous material thereon by exposing a region of the layer to a beam of electrons to...
4560420 Method for reducing temperature variations across a semiconductor wafer during heating  
Temperature variations across the surface of a semiconductor wafer (12), having at least one major surface thereof exposed to a source of radiant heat energy (18), are reduced by positioning a...
4555301 Formation of heterostructures by pulsed melting of precursor material  
A method for forming heterostructures comprising multiconstituent epitaxial material, on a substrate comprises formation of a layer of "precursor" material on the substrate, and momentarily melting...
Matches 1 - 50 out of 59 1 2 >