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7611577 |
Semiconductor thin film manufacturing method and device, beam-shaping mask, and thin film transistor
A manufacturing method of a semiconductor thin film decreases the number of and controls the direction of crystal grain boundaries. A first beam irradiated onto amorphous silicon produces a radial...
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7473622 |
Laser annealing method and manufacturing method of a semiconductor device
To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid...
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7431766 |
Crystal-structure-processed devices, methods and systems for making
Processing and systems to create, and resulting products related to, very small-dimension singular, or monolithically arrayed, mechanical devices. Processing is laser-performed in relation to a...
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7384476 |
Method for crystallizing silicon
A method for crystallizing silicon is provided. The method includes: forming an amorphous silicon layer on a substrate; aligning a mask above the substrate, the mask being divided into a plurality...
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7341928 |
System and process for processing a plurality of semiconductor thin films which are crystallized using sequential lateral solidification techniques
A process and system are provided for processing at least one section of each of a plurality of semiconductor film samples. In these process and system, the irradiation beam source is controlled to...
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7294197 |
Formation of a silicon sheet by cold surface casting
Metallurgical grade silicon or high purity silicon beads developed from a fluidized bed process are melted in a cooled aluminum crucible, such that a non wetted interface is created between the...
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7261773 |
Melting crucible
The invention relates to producing a melt that is as homogeneous as possible, to which fresh material in the form of granulate is continuously supplied. Since the granulate is cooler than the melt,...
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7192479 |
Laser annealing mask and method for smoothing an annealed surface
A mask with sub-resolution aperture features and a method for smoothing an annealed surface using a sub-resolution mask pattern are provided. The method comprises: supplying a laser beam having a...
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7153359 |
Crystalline semiconductor film and production method thereof, and semiconductor device and production method thereof
A crystalline semiconductor film, the crystalline semiconductor film being formed over an insulative substrate, and including semiconductor crystal grains laterally grown along a surface of the...
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7135070 |
Monolithic stacked/layered crystal-structure-processed mechanical, and combined mechanical and electrical, devices and methods and systems for making
Monolithic stacked/layered room-temperature-processed materials whose internal crystalline structures are laser modification to create arrays of mechanical, and combined mechanical and electrical,...
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7128783 |
Thin-film crystal-structure-processed mechanical devices, and methods and systems for making
Thin-film laser-effected internal crystalline structure modified materials suitable for the creation of various small-dimension mechanical devices, either singly or in monolithic arrays, such as...
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7125451 |
Crystal-structure-processed mechanical devices and methods and systems for making
Laser processing of various materials to create mechanical devices whose internal mechanical properties are provided in final useable form by adjustments made in internal crystalline structure.
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7105048 |
Laser irradiation apparatus
Each region, which should be left on a substrate after patterning, of a semiconductor film is grasped in accordance with a mask. Then, each region to be scanned with laser light is determined so...
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7056382 |
Excimer laser crystallization of amorphous silicon film
A method of crystallizing an amorphous silicon layer includes the steps of generating an excimer laser beam having a first energy density and a second energy density, irradiating an amorphous...
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6989300 |
Method for forming semiconductor films at desired positions on a substrate
A semiconductor film formation method allowing a single-crystal semiconductor film to be formed at a desired position on a substrate with reliability is disclosed. After preparing the substrate...
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6932865 |
System and method of making single-crystal structures through free-form fabrication techniques
A single-crystal structure is grown using free-form fabrication through principles of directional solidification and direct-deposition techniques. The structure is formed from a metallic alloy by...
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6921434 |
Regulated growth method for laser irradiating silicon films
A method is provided for maintaining a planar surface as crystal grains are laterally grown in the fabrication of crystallized silicon films. The method comprises: forming a film of amorphous...
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6860939 |
Semiconductor crystal-structure-processed mechanical devices, and methods and systems for making
Processing and systems to create, and resulting products related to, very small-dimension singular, or monolithically arrayed, semiconductor mechanical devices. Processing is laser performed on...
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6656270 |
Excimer laser crystallization of amorphous silicon film
A method of crystallizing an amorphous silicon layer includes the steps of generating an excimer laser beam having a first energy density and a second energy density, irradiating an amorphous...
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6645454 |
System and method for regulating lateral growth in laser irradiated silicon films
A method is provided for maintaining a planar surface as crystal grains are laterally grown in the fabrication of crystallized silicon films. The method comprises: forming a film of amorphous...
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6387178 |
Single crystal producing method and apparatus
A single crystal producing method for growing a single crystal, comprises the steps of: placing a material at one focal point in a light-condensing and heating furnace having an ellipse in section;...
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6340392 |
Pulling methods for manufacturing monocrystalline silicone ingots by controlling temperature at the center and edge of an ingot-melt interface
Czochralski pullers are modified to grow perfect monocrystalline silicon ingots that are free of vacancy agglomerates and interstitial agglomerates, by modifying components of the Czochralski...
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6322625 |
Crystallization processing of semiconductor film regions on a substrate, and devices made therewith
Semiconductor integrated devices such as transistors are formed in a film of semiconductor material formed on a substrate. For improved device characteristics, the semiconductor material has...
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6235110 |
Method of producing recrystallized-material-member, and apparatus and heating method therefor
The present invention relates to a method of producing a recrystallized-material-member by melting a given zone of a crystalline-material-member and moving the molten zone continuously along the...
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6165263 |
Method for growing single crystal
A method for growing a single crystal by allowing a seed crystal to contact a molten zone formed by melting a polycrystalline material, followed by moving the molten zone away from the seed,...
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6126742 |
Method of drawing single crystals
In a method of drawing single crystals from a body of highly pure polycrystalline material molten by inductive heating, a solid body of the polycrystalline material is first heated by direct...
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6096581 |
Method for operating an active matrix display device with limited variation in threshold voltages
A method for operating an active matrix display device having an active matrix circuit, a column driver circuit and a scan driver circuit including driving the active matrix circuit by the column...
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6039802 |
Single crystal growth method
There is provided a single crystal growth method which allows single crystal of an incongruent melting compound to be grown stable while controlling its growth orientation. The single crystal...
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6033470 |
Method of producing a cerium-containing magnetic garnet single crystal
The present invention provides a cerium-containing magnetic garnet single crystal having a size large enough to use as a material for optical communication of an isolator and for an electronic...
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5916364 |
Method and apparatus for pulling a single crystal
Methods and apparatuses for pulling a single crystal. In a conventional method for pulling a single crystal, a neck having a smaller diameter has been formed in order to exclude dislocation induced...
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5776818 |
Method of fabricating silicon-on-insulator pressure detecting device
A method of fabricating a silicon structure including forming an insulating layer having an opening on single crystal semiconductor substrate; forming a polycrystalline semiconductor layer on the...
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5741359 |
Method and apparatus for zone-melting recrystallization of semiconductor layer
An apparatus for zone-melting recrystallization of a semiconductor layer includes a first heater, on which a semiconductor wafer including the semiconductor layer and upper and lower insulating...
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5702565 |
Process for laser scribing a pattern in a planar laminate
An improved dielectric layer of an electroluminescent laminate, and method of preparation are provided. The dielectric layer is formed as a thick layer from a ceramic material to provide: a...
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5591668 |
Laser annealing method for a semiconductor thin film
A laser annealing method for a semiconductor thin film for irradiating the semiconductor thin film with a laser beam having a section whose outline includes a straight-line portion, so as to change...
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5467731 |
Method of producing a semiconductor structure including a recrystallized film
A method for producing a semiconductor structure including a semiconductor film formed on a semiconductor substrate body via an insulating film includes: laminating a first insulating film, a first...
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5463975 |
Process for producing crystal
A process for producing a crystal comprises the step of applying crystal forming treatment on a light-transmissive substrate having a non-nucleation surface (S NDS ) of a small nucleation density...
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5431126 |
Method of forming semiconductor crystal and semiconductor device
A thin semiconductor film having at least one an edge is formed on a base whose material is different from the material of the thin semiconductor film. A laser beam, for example, is applied to the...
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5338388 |
Method of forming single-crystal semiconductor films
A method of forming single-crystal semiconductor films, in which a single-crystal semiconductor substrate having a crystal axis transferred from a single-crystal semiconductor substrate is formed...
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5322589 |
Process and apparatus for recrystallization of semiconductor layer
A process for recrystallizing a semiconductor layer including the steps of forming a polycrystalline or amorphous semiconductor layer on a substrate and scanning energy beam on the semiconductor...
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5221411 |
Method for synthesis and processing of continuous monocrystalline diamond thin films
Disclosed is a method for the development of diamond thin films on a non-diamond substrate. The method comprises implanting carbon ions in a lattice-plane matched or lattice matched substrate. The...
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5208187 |
Metal film forming method
A metal film forming method comprises steps of: forming a non-monocrystalline metal film principally composed of aluminum, in contact, at least in a part thereof, with a monocrystalline metal...
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5145808 |
Method of crystallizing a semiconductor thin film
A method of crystallizing a semiconductor thin film moves a laser beam emitted by a pulse laser in a first direction to irradiate the semiconductor tin film with the laser beam for scanning. The...
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5122223 |
Graphoepitaxy using energy beams
Improvements to graphoepitaxy include use of irradiation by electrons, ions or electromagnetic or acoustic radiation to induce or enhance the influence of artificial defects on crystallographic...
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4915772 |
Capping layer for recrystallization process
An improved method for crystallizing amorphous or polycrystalline material is disclosed, which method employs a novel intermediate product. A film of material to be crystallized is formed on a...
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4888302 |
Method of reduced stress recrystallization
A defect free monocrystalline layer of silicon on an insulator is produced by forming a thin layer of silicon dioxide on a monocrystalline silicon substrate, forming a thin layer of polycrystalline...
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4861418 |
Method of manufacturing semiconductor crystalline layer
A method of manufacturing a semiconductor crystalline layer comprising the following steps: a step of forming, on a single crystalline substrate composed of a semiconductor having a main face on...
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4752590 |
Method of producing SOI devices
Disclosed are methods that result in substantial improvement of silicon-on-insulator (SOI) device manufacture. We have discovered that carbon can be advantageously used as a wetting agent in the...
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4751193 |
Method of making SOI recrystallized layers by short spatially uniform light pulses
Method is provided for manufacturing large crystalline and monocrystalline semiconductor-on-insulator devices.
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4743567 |
Method of forming thin, defect-free, monocrystalline layers of semiconductor materials on insulators
A structure comprising thin defect-free monocrystalline layer of a silicon of an insulating layer is produced from a structure comprising a thin recrystallizable layer of silicon on an insulating...
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4737233 |
Method for making semiconductor crystal films
Semiconductor crystal films on a dielectric substrate are advantageously made by a zone melting method. Single-crystal structure is initiated at a seed surface, and made to extend across a...
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