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8138066 |
Dislocation engineering using a scanned laser
A method for generating patterned strained regions in a semiconductor device is provided. The method includes directing a light-emitting beam locally onto a surface portion of a semiconductor body;...
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8114215 |
2-dimensional line-defects controlled silicon ingot, wafer and epitaxial wafer, and manufacturing process and apparatus therefor
The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the...
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8110041 |
Coloured diamond
A method of producing a single crystal CVD diamond of a desired color which includes the steps of providing single crystal CVD diamond which is colored and heat treating the diamond under...
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8105434 |
Si ribbon, SiO2 ribbon and ultra pure ribbons of other substances
A method of purifying substances is described herein, particularly suitable for purifying silica and forming it into silicon oxide sheets or ribbons, or silicon sheets or ribbons. The method...
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8101019 |
Method for producing a monocrystalline or polycrystalline semiconductor material
In the method of making a monocrystalline or polycrystalline semiconductor material semiconductor raw material is introduced into a melting crucible and directionally solidified using a vertical...
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8097524 |
Lightly doped silicon carbide wafer and use thereof in high power devices
A method for manufacturing a silicon carbide single crystal. A silicon carbide single crystal is grown. The crystal has a boron concentration less than 5×1014 cm−3, and a concentration of tr...
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8023180 |
Fluoroberyllium borate non-linear optical crystals and their growth and applications
A fluoroberyllium borate non-linear optical single crystal is represented by a molecular formula of MBe2BO3F2, wherein M is Rb or Cs. The crystal can be grown by the flux method comprising the...
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8016940 |
Processing method for organic crystal, processing device for organic crystal, and observing device for organic crystal
The short-pulse laser light 9 emitted from the short-pulse laser light source 1 is focused on and caused to irradiate an organic crystal 8 contained in a sample container 6 via a shutter 2,...
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7993452 |
Method of manufacturing epitaxial silicon wafer
A role of a bottom face of a silicon wafer is identified in a manufacturing process of the silicon wafer. And preferable characteristic feature is also identified. In order to obtain the above...
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7993454 |
Surface modified quartz glass crucible, and its modification process
A surface modified quartz glass crucible and a process for modifying the crucible includes a layer of a metal oxide on the whole or a part of the inside and/or outside of the crucible, and baking...
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7985294 |
Optical device and method of manufacturing the same
An optical device and a method of manufacturing the optical device, with the method including the steps of forming a dopant layer on a stoichiometric lithium niobate single crystal substrate with...
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7972437 |
Hollow nanocrystals and method of making
Described herein are hollow nanocrystals having various shapes that can be produced by a simple chemical process. The hollow nanocrystals described herein may have a shell as thin as 0.5 nm and...
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7968074 |
Method for making low-stress large-volume crystals with reduced stress birefringence and more uniform refractive index and crystals made thereby
The method produces low-stress, large-volume crystals with low birefringence and uniform index of refraction. The method includes growing the crystal with larger than desired dimensions including...
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7964275 |
Silicon wafer having good intrinsic getterability and method for its production
Silicon wafers in the entire volume of which crystal lattice vacancies are the prevalent point defect type, have a rotationally symmetric region whose width is at least 80% of the wafer radius,...
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7955433 |
Method and system for forming a silicon ingot using a low-grade silicon feedstock
Techniques for the formation of a silicon ingot using a low-grade silicon feedstock include forming within a crucible device a molten silicon from a low-grade silicon feedstock and performing a...
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7905957 |
Method of obtaining bulk single crystals by seeded growth
The present invention is related to a process for obtaining a larger area substrate of mono-crystalline gallium-containing nitride by making selective crystallization of gallium containing nitride...
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7892354 |
Process for the parallel detection of crystalline forms of molecular solids
A process for the detection of polymorphic or pseudopolymorphic forms of solid, molecular and crystallizing compounds, or of molecular, cocrystalline compounds or of solid solutions which consist...
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7887631 |
System and high pressure, high temperature apparatus for producing synthetic diamonds
An apparatus for growing a synthetic diamond comprises a growth chamber, at least one manifold allowing access to the growth chamber, and a plurality of safety clamps positioned on opposite sides...
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7883645 |
Method for increasing the conversion of group III metals to group III nitrides in a fused metal containing group III elements
The present invention relates to a method for increasing the conversion of group III metal to group III nitride in a fused metal containing group III elements, with the introduction of nitrogen...
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7878205 |
Manufacturing method for QPM wavelength converter elements, QPM wavelength converter element, and medical laser apparatus using it
A manufacturing method for quasi phase matching (QPM) wavelength converter elements using crystal quartz as a base material in which twins are periodically induced, comprises a step of periodically...
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7838121 |
Highly anisotropic ceramic thermal barrier coating materials and related composites
High temperature composites and thermal barrier coatings, and related methods, using anisotropic ceramic materials, such materials as can be modified to reduce substrate thermal mismatch.
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7837789 |
***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Method of SiC single crystal growth and SiC single crystal
A method of epitaxial growth of a 4H—SiC single crystal enabling growth of an SiC single crystal with low defects and low impurities able to be used for a semiconductor material at a practical g...
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7833345 |
Treatment of crystals in order to avoid light-induced modifications of the refractive index
A method for the treatment of a crystal, such as a lithium niobate crystal or lithium tantalate crystal, having nonlinear optical properties. The crystal comprises foreign atoms which bring about...
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7828893 |
Silicon wafer and process for the heat treatment of a silicon wafer
A silicon wafer having no epitaxially deposited layer or layer produced by joining to the silicon wafer, with a nitrogen concentration of 1·1013-8·1014 atoms/cm3, an oxygen concentration of 5...
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7824493 |
Silicon wafer and method for manufacturing the same
A method for manufacturing a silicon wafer includes a step of annealing a silicon wafer which is sliced from a silicon single crystal ingot, thereby forming a DZ layer in a first surface and in a...
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7794538 |
Self-assembly method, opal, photonic band gap, and light source
A suspension of particles is rapidly self-assembled with a minimal number of defects into a three-dimensional array of particles onto a substrate under simultaneous sedimentating and annealing...
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7785706 |
Semiconductor wafer and process for its production
A layered semiconductor wafer contains the following layers in the given order: a monocrystalline substrate wafer (1) containing substantially silicon,a first amorphous intermediate layer (2) of an...
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7771849 |
Method of reducing dislocations in group III nitride crystal, and substrate for epitaxial growth
An epitaxial substrate including a single-crystal base material and an upper layer of a group III nitride crystal film which is epitaxially formed on a main surface of the base material undergoes...
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7763112 |
Methods and systems for co-crystal synthesis
The present invention comprises methods and apparatuses for the production or formation of co-crystals. The methods and apparatuses can be used to grind two or more co-crystal components resulting...
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7754011 |
Method of manufacturing a calcium fluoride single crystal
A method of manufacturing calcium fluoride single crystal includes cooling the calcium fluoride single crystal with variable cooling rates so that throughout a temperature range in the cooling...
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7754585 |
Method of heat treatment of silicon wafer doped with boron
A method of subjecting a silicon wafer doped with boron to a heat treatment in an argon atmosphere, wherein the argon atmosphere is replaced with a hydrogen atmosphere or a mixed gas of an argon...
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7754012 |
Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride
A method for manufacturing Group III nitride crystals with high quality is provided. By the method, a crystal raw material solution and gas containing nitrogen are introduced into a reactor vessel,...
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7732352 |
Silicon wafers and method of fabricating the same
By using a two-step RTP (rapid thermal processing) process, the wafer is provided which has an ideal semiconductor device region secured by controlling fine oxygen precipitates and OiSFs (Oxidation...
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7713848 |
Method for re-crystallization of layer structures by means of zone melting, a device for this purpose and use thereof
The invention relates to a method for re-crystallization of layer structures by means of zone melting, in which, as a result of convenient arrangement of a plurality of heat sources, a significant...
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7628853 |
Lithium tantalate substrate and process for its manufacture
A lithium tantalate substrate obtained by working in the state of a substrate a lithium tantalate crystal grown by the Czochralski method is buried in a mixed powder of Al and Al2O3, followed by...
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7618491 |
Scintillator single crystal and production method of same
A scintillator single crystal of a specific cerium-doped silicate compound that contains 0.00005 to 0.1 wt % of one or more types of element selected from the group consisting of elements belonging...
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7604696 |
Method of making a solar grade silicon wafer
A method of making a solar grade silicon wafer is disclosed. In at least some embodiments of this invention, the method includes the follow steps: providing a slurry including a liquid that...
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7591894 |
LuAP scintillator
An LuAP scintillation detector and a method for improving the light output and uniformity of an LuAP scintillator crystal is provided, wherein the method includes disposing the scintillator crystal...
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7569433 |
Semiconductor device and method of manufacturing the same
In order to obtain a thin-film transistor having high characteristics using a metal element for accelerating the crystallization of silicon, a nickel element is selectively added to the surface of...
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7563320 |
Hydrothermal method for preparing large single crystals of scandium, yttrium, and lanthanide sesquioxides
Scandium, yttrium, and lanthanide sesquioxide crystals having the formula Ln2O3, wherein Ln is selected from Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, with or without...
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7563319 |
Manufacturing method of silicon wafer
An active layer side silicon wafer is heat-treated in an oxidizing atmosphere to thereby form a buried oxide film therein. The active layer side silicon wafer is then bonded to a supporting side...
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7544345 |
Magnesium oxide single crystal having controlled crystallinity and method for producing the same
A magnesium oxide single crystal having controlled crystallinity has a subboundary, and ranges of variation of diffraction line positions, as measured for reciprocal lattice maps with respect to a...
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7534296 |
Electrically conductive diamond electrodes
An electrically conductive diamond electrode and process for preparation thereof is described. The electrode comprises diamond particles coated with electrically conductive doped diamond preferably...
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7531036 |
Single crystal heat treatment method
The present invention provides a single crystal heat treatment method, having a step of heating a single crystal of a cerium-doped silicate compound represented by any of general formulas (1) to...
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7527690 |
Ferroelectric ceramic compound, a ferroelectric ceramic single crystal, and preparation processes thereof
The present invention relates to a ferroelectric ceramic compound having the composition of the following formula: s[L]−x[P]y[M]z[N]p[T], a ferroelectric ceramic single crystal, and preparation p...
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7527755 |
Method for increasing bulk conductivity of a ferroelectric material such as lithium tantalate
In one embodiment, a ferroelectric material is processed by placing the material in an environment including metal vapor and heating the material to a temperature below the Curie temperature of the...
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7524370 |
Nanostructure and manufacturing method for same
The invention relates to nanostructure and its manufacturing method. In the manufacturing method of a nanostructure, first anisotropic crystalline particles, connectors having an end to be...
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7507293 |
Photonic crystals with nanowire-based fabrication
Fabrication of a photonic crystal is described. A patterned array of nanowires is formed, the nanowires extending outward from a surface, the nanowires comprising a catalytically grown nanowire...
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7507289 |
Electroconductive 12CaO—7Al2O3 and compound of same type, and method for preparation thereof
In a solid solution system of Al2O3 and CAO or SrO, it has been difficult to obtain a material having a high electrical conductivity (>10−4 S·cm−) at room temperature. A compound is provided in w...
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7488384 |
Direct pyrolysis route to GaN quantum dots
Colloidal nanocrystals or “quantum dots” of GaN are directly produced by heating amidogallium dimer, i.e., (Ga2[N(CH3)2]6), in the presence of a functional amine. The GaN quantum dots obtained, whi...
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