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8940092 Hybrid fibers, devices using hybrid fibers, and methods for making hybrid fibers  
The present invention relates generally to nanocomposite materials. The present invention relates more particularly to hybrid fibers as well as devices including them and methods for making them....
8927376 Semiconductor device and method of forming epitaxial layer  
A method for forming epitaxial layer is disclosed. The method includes the steps of providing a semiconductor substrate, and forming an undoped first epitaxial layer in the semiconductor...
8754448 Semiconductor device having epitaxial layer  
A semiconductor device includes a semiconductor substrate and a plurality of transistors. The semiconductor substrate includes at least an iso region (namely an open region) and at least a dense...
8475590 Method and apparatus for the production of crystalline silicon substrates  
An apparatus and method for producing a crystalline ribbon continuously from a melt pool of liquid feed material, e.g. silicon. The silicon is melted and flowed into a growth tray to provide a...
8236104 Single-crystal manufacturing apparatus and single-crystal manufacturing method  
A single-crystal manufacturing apparatus comprising at least: a main chamber configured to accommodate a crucible; a pulling chamber continuously provided above the main chamber, the pulling...
7901968 Heteroepitaxial deposition over an oxidized surface  
Some embodiments of the invention are related to manufacturing semiconductors. Methods and apparatuses are disclosed that provide thin and fully relaxed SiGe layers. In some embodiments, the...
7846253 Silicon semiconductor substrate and production method thereof  
The present invention can provide a silicon semiconductor substrate used for and epitaxial wafer, in which uniform and high-level gettering ability is obtained irrespective of slicing positions...
7736433 BaTiO3—PbTiO3 series single crystal and method of manufacturing the same, piezoelectric type actuator and liquid discharge head using such piezoelectric type actuator  
BaTiO3—PbTiO3 series single crystal is single-crystallized by heating BaTiO3—PbTiO3 compact powder member or sintered member having a smaller Pb-containing mol number than Ba-containing mol...
7641733 Method and apparatus for growth of multi-component single crystals  
A method and apparatus for growth of uniform multi-component single crystals is provided. The single crystal material has at least three elements and has a diameter of at least 50 mm, a...
5888293 Material supplied for fabricating single-crystal semiconductor  
A low-cost and high productivity charging material is provided for use in the recharge or additional charge fabrication of single-crystal semiconductor by means of the CZ method. Common...
5785753 Single crystal manufacturing method  
In a single-crystal manufacturing method, after a single crystal is grown, the crystal is separated from the molten melt and gradually cooled while suspended immediately above the surface of the...
5073229 Semiconductor crystal pulling method  
A crystal pulling method includes the steps of disposing a separation wall concentrically with an in a semiconductor crystal pulling crucible to divide the crucible into an inner chamber and an...
4778478 Method of making thin film photovoltaic solar cell  
Solar cell quality semiconductors are grown using a constant temperature sliding boat liquid phase process in a continuous or semi-continuous mode. The growth is driven by applying a temperature...
4428783 Process for the manufacture of vertical P-N junctions in the pulling of silicon from a silicon melt  
The invention makes it possible to manufacture silicon wafers having vertical p-n junctions as the basic material for solar cells. As a result of simultaneously adding certain dopants that act in...
4330359 Electromigration process for the purification of molten silicon during crystal growth  
A process for the purification of molten materials during crystal growth by electromigration of impurities to localized dirty zones. The process has particular applications for silicon crystal...
4233338 Processes for deposition of thin films of crystalline silicon on graphite  
Processes for the continuous deposition of crystalline silicon on graphite substrates, the silicon being undoped or N- or P-doped and the substrates being useful for photovoltaic cells and other...
4022652 Method of growing multiple monocrystalline layers  
A method of growing multiple monocrystalline layers from melts comprising growing a first monocrystalline layer from the first melt, and growing a second monocrystalline layer on the first...
4023118 Superheterojunction laser  
A superheterojunction (SHJ) laser constructed from periodic structural semiconductor materials. The SHJ laser has approximately a thousand junctions which are planar and layered to provide gain in...
3915660 Preparing oriented semiconductor monocrystalline rods  
A process for preparing oriented semiconductor monocrystalline rods with a specific resistance which drops towards the center of the rod. The process utilizes rapid non-crucible moving zone...
3470039 CONTINUOUS JUNCTION GROWTH  
3394994 Method of varying the thickness of dendrites by addition of an impurity which controls growith in the <111> direction  
3341376 Method of producing crystalline semiconductor material on a dendritic substrate  
3293001 Process and apparatus for producing elongated, particularly tape-shaped semiconductor bodies from a semiconductor melt  
3228753 Orbital-spin crystal pulling  
3226268 Semiconductor structures for microwave parametric amplifiers  
3198671 Method of manufacturing monocrystalline bodies of semi-conductive material  
3192082 Process for the production of npn or pnp junction  
3152022 Epitaxial deposition on the surface of a freshly grown dendrite  
3150017 Doping a pulled semiconductor crystal with impurities having different diffusion coefficients  
3141848 Process for the doping of silicon  
3129061 Process for producing an elongated unitary body of semiconductor material crystallizing in the diamond cubic lattice structure and the product so produced  
3106764 Continuous process for producing semiconductor devices  
3084078 High frequency germanium transistor  
3082131 Versatile transistor structure  
3070465 Method of manufacturing a grown type semiconductor device  
3065115 Method for fabricating transistors having desired current-transfer ratios  
2999776 Method of producing differentiated doping zones in semiconductor crystals  
2998335 Method and apparatusfor growing single crystals from molten bodies  
2993818 Method for growing semiconductor crystals  
2973290 Production of semi-conductor bodies by impurity diffusion through station ary interface  
2950219 Method of manufacturing semiconductor crystals  
2879189 Method for growing junction semi-conductive devices  
2854363 Method of producing semiconductor crystals containing p-n junctions  
2851341 Method and equipment for growing crystals  
2849343 Method of manufacturing semi-conductive bodies having adjoining zones of different conductivity properties  
2845372 Grown junction type transistors and method of making same  
2841860 Semiconductor devices and methods  
2842467 Method of growing semi-conductors  
2839436 Method and apparatus for growing semiconductor crystals  
2822308 Semiconductor p-n junction units and method of making the same  

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