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7635413 |
Method for preparing silicon carbide single crystal
A SiC single crystal is produced by the solution growth method in which a seed crystal attached to a seed shaft is immersed in a solution of SiC dissolved in a melt of Si or a Si alloy and a SiC...
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7635414 |
System for continuous growing of monocrystalline silicon
An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an...
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7615115 |
Liquid-phase growth apparatus and method
A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a raw material for forming the crystal, and a substrate holder for...
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7611580 |
Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field
System for controlling crystal growth in a Czochralski crystal growing apparatus. A magnetic field is applied within the crystal growing apparatus and varied to control a shape of the melt-solid...
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7611586 |
Reactor for extended duration growth of gallium containing single crystals
An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic...
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7608146 |
Method and apparatus for the production of crystalline silicon substrates
An apparatus and method for producing a crystalline ribbon continuously from a melt pool of liquid feed material, e.g. silicon. The silicon is melted and flowed into a growth tray to provide a melt...
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7608148 |
Crystallization apparatus and crystallization method
A crystallization apparatus includes an illumination system which illuminates a phase shifter having a phase shift portion, and irradiates a polycrystal semiconductor film or an amorphous...
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7604698 |
Cooling structure for body of crystal-growing furnace
A cooling structure for the body of a crystal-growing furnace includes an upper body and a lower body. The upper body includes an outer upper shell and an inner upper shell, wherein an upper...
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7588638 |
Single crystal pulling apparatus
A single crystal pulling apparatus having a heater 4 melting material silicon by thermal radiation from a cylindrical exothermic part 4 a which surrounds a crucible 3 inside a furnace body 2...
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7582162 |
Semiconductor device and semiconductor device production system
A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain...
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7572335 |
Crystallization apparatus and crystallization method
A crystallization apparatus includes an illumination system which illuminates a phase-shift mask and an image-forming optical system arranged in an optical path between the phase-shift mask and a...
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7572334 |
Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application
A method and apparatus for forming a semiconductor sheet suitable for use as a solar cell by depositing an array of solidified drops of a feed material on a sheet support. The desired properties of...
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7553468 |
Method for producing solid product
Provided is a production method for producing a solid product by a reaction of gaseous raw materials with a plurality of components including a step of conducting the reaction using a reactor...
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7540921 |
Crystallization apparatus, crystallization method, phase modulation element, device and display apparatus
A phase modulation element according to the present invention has a first area having a first phase value based on a phase modulation unit having a predetermined size and a second area having a...
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7524376 |
Method and apparatus for aluminum nitride monocrystal boule growth
A crystal growth setup within a physical vapor transport growth furnace system for producing AlN monocrystal boules at high temperatures includes a crucible effective to contain an AlN source...
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7524374 |
Method and apparatus for generating a precursor for a semiconductor processing system
Embodiments of the present invention are directed to an apparatus for generating a precursor for a semiconductor processing system ( 320 ). The apparatus includes a canister ( 300 ) having a...
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7524375 |
Growth of uniform crystals
The invention provides for growing semiconductor and other crystals by loading a vessel in its lower portion with a seed crystal, loading a charge thereon in the vessel, heating the charge to a...
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7501024 |
Carbon nanohorn producing device and carbon nanohorn producing method
A plume ( 109 ) is generated by irradiating a side face of a graphite rod ( 101 ) with a laser beam ( 103 ) to vaporize carbon. The vaporized carbon is introduced to a carbon nanohorn recovery...
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7497906 |
Seed crystal fixing apparatus and a method for fixing the seed crystal
A seed crystal fixing apparatus for fixing the seed crystal on the seed crystal setting part of a reaction vessel with interposition of the adhesive, has a chamber configured to place the seed...
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7497907 |
Partially devitrified crucible
A vitreous crucible for holding semiconductor material during a moncrystalline ingot growing process has a sidewall. Part of the sidewall is coated with a devitrification promoter and part of the...
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7491270 |
Heat shield member and single crystal pulling device
A heat shielding member 20 that thermally shields the periphery of a single crystal 16 used in a Czochralski single crystal pulling device that pulls the single crystal 16 from a melt 15 ...
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7473317 |
Crystal growth crucible
A crystal growth crucible made of boron nitride includes a cylindrical tip portion for accommodating a seed crystal, and a cylindrical straight-body portion for growing a crystal, which is formed...
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7470326 |
Apparatus for manufacturing silicon single crystal, method for manufacturing silicon single crystal, and silicon single crystal
The apparatus for manufacturing a silicon single crystal includes: a crucible for storing molten silicon; a pulling-up device for pulling up a silicon single crystal from the molten silicon in the...
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7462238 |
Crystal growth apparatus and method of producing a crystal
A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal in a vessel space thereof, a porous member holding a metal melt by a...
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7462237 |
Systems and methods for generating images of crystals
The present invention provides computer-implementable systems and methods for generating images of crystals. The systems each include (a) a light source; (b) a rotatable first polarizing material;...
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7449066 |
Apparatus for fabrication of GaN bulk single crystal and fabrication method of GaN single crystal ingot using the same
An apparatus for fabricating a GaN single crystal and a fabrication method for producing GaN single crystal ingot are provided. The apparatus includes: a reactor including a ceiling, a floor and a...
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7442255 |
Crucible for a device for producing a block of crystalline material and method for producing same
The bottom of the crucible has much greater thermal transfer properties, parallel to an axis substantially perpendicular to the bottom, than those of the side walls. The bottom and side walls are...
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7427327 |
Silica glass crucible with barium-doped inner wall
A silica glass crucible includes a thin barium-doped inner layer, a stable, bubble-free intermediate layer, and a stable opaque outer layer. The fusion process of the present invention controls the...
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7422634 |
Three inch silicon carbide wafer with low warp, bow, and TTV
A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches, a warp of less than about 5 μm, a bow less than about 5 μm, and a total thickness...
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7419547 |
Method for marking a crystalline material using cathodoluminescence
In a first exemplary embodiment of the present invention, a method is provided for marking a sample of a doped crystalline material. According to a feature of the present invention, the method...
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7413718 |
Reaction apparatus for producing silicon
A silicon production reactor including a reaction vessel and heating element, the reaction vessel has a vertically extending wall and a space surrounded by the wall, the heating element being...
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7407550 |
Method and apparatus for crystal growth
A method and apparatus for growing a crystalline or poly-crystalline body from a melt is described, wherein the melt is retained by capillary attachment to edge features of a mesa crucible. The...
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7402208 |
Method and equipment for producing biopolymer crystal
The invention provides a crystallizing method and an apparatus for producing a biopolymer capable of simplifying operations for taking out a produced crystal and mounting the crystal onto a crystal...
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7396411 |
Apparatus for manufacturing single crystal
A method for manufacturing a single crystal includes the steps of: flowing a raw material gas toward a seed crystal in a reactive chamber so that the single crystal grows from the seed crystal;...
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7383696 |
Silica glass crucible with bubble-free and reduced bubble growth wall
A silica glass crucible includes a stable, bubble-free inner layer and an opaque outer layer, both layers demonstrating reduced bubble growth during a Czochralski process. When used in the CZ...
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7377977 |
High-purity crystal growth
A method of growing a crystal on a substrate disposed in a reactor, that provides a reactor chamber in which the substrate is disposed, includes flowing reactive gases inside the reactor chamber...
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7378128 |
Crucible for the crystallization of silicon
The invention relates to a crucible for the crystallization of silicon and to the preparation and application of release coatings for crucibles used in the handling of molten materials that are...
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7361223 |
Method and apparatus for eliminating a display defect in a liquid crystal display device
A method for eliminating a display defect in a liquid crystal display device includes disposing a liquid crystal panel adhered with a polarizer into a first buffer chamber, increasing pressure of...
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7357839 |
SOI wafer and a method of producing the same
The present invention provides an SOI wafer having at least an SOI layer, in which a plain orientation of the SOI layer is off-angled from {110} only in a direction to <100>, and an off-angle...
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7344597 |
Vapor-phase growth apparatus
A vapor-phase growth apparatus includes: at least a reaction furnace which is hermetically closable, a wafer container which is disposed in the reaction furnace, for disposing a wafer at a...
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7335260 |
Laser annealing apparatus
A laser annealing apparatus for sequential lateral solidification (SLS) to uniformly crystallize silicon on an entire silicon substrate by minimizing the dislocation of the silicon substrate during...
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7335262 |
Apparatus for obtaining a bulk single crystal using supercritical ammonia
An apparatus includes an autoclave for preparing a supercritical solvent, a convection controller for establishing a convection flow, a dissolution zone where a feedstock is located above the...
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7332029 |
Crystal forming apparatus and method for using same
A crystal forming apparatus and method for using the apparatus, the method including depositing a precipitant solution in a site, incubating the site, during which time volatile vapor evaporates...
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7326296 |
High throughput screening of crystallization of materials
High throughput screening of crystallization of a target material is accomplished by simultaneously introducing a solution of the target material into a plurality of chambers of a microfabricated...
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7323052 |
Apparatus and method for the production of bulk silicon carbide single crystals
An apparatus and method for growing bulk single crystals of silicon carbide is provided. The apparatus includes a sublimation chamber with a silicon vapor species phase outlet that allows the...
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7318865 |
Crystallization apparatus and method; manufacturing method of electronic device, electronic device, and optical modulation element
A manufacturing method of an electronic device includes positioning a processed substrate with respect to a substrate stage of a crystallization apparatus and supporting it with at least one...
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7318866 |
Systems and methods for inducing crystallization of thin films using multiple optical paths
The present invention is directed to systems and methods for irradiating regions of a thin film sample(s) with laser beam pulses having different energy beam characteristics that are generated and...
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7311778 |
Single scan irradiation for crystallization of thin films
A method of processing a polycrystalline film on a substrate includes generating a plurality of laser beam pulses, positioning the film on a support capable of movement in at least one direction,...
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7311773 |
Biopolymer crystal mounting device and manufacturing method thereof
The invention provides a biopolymer crystal mounting device with which a biopolymer crystal having been grown in a solution containing a biopolymer can be taken out of the solution. The device can...
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7299658 |
Quartz glass crucible for the pulling up of silicon single crystal
A quartz glass crucible for use in pulling up a silicon single crystal, wherein it has, at least in the curved portion thereof, a three-layer structure comprising a transparent inner layer being...
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