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7384477 Method for producing a single crystal and a single crystal  
The present invention is a method for producing a single crystal with pulling the single crystal from a raw material melt in a chamber by CZ method, wherein when growing the single crystal, where a...
7378071 Silicon wafer and method for producing silicon single crystal  
A method for growing a silicon single crystal ingot by a Czochralski method, which is capable of providing silicon wafers having very uniform in-plane quality and which results in improvement of...
7374741 Method for growing silicon single crystal and silicon wafer  
In this method for growing a silicon single crystal, an ambient gas where a single crystal is grown contains a gas hydrogen-containing substance, and a silicon single crystal is grown at a pull...
7364618 Silicon wafer, method for manufacturing the same and method for growing silicon single crystals  
This silicon wafer is obtained from a silicon single crystal grown by the CZ method in a hydrogen-containing inert gas atmosphere, and is a completely grown-in defect-free wafer containing no COPs...
7361218 Method and apparatus for fabricating a crystal fiber  
The present invention relates to a method for fabricating a crystal fiber having different regions of polarization inversion, comprising the following steps: (a) providing a source material; (b)...
7351282 Cutting method and apparatus for ingot, wafer, and manufacturing method of solar cell  
Cutting method of ingot into wafers along cleavage plane. Onto surface of single crystal ingot 10 is implanted ion beam 23 to generate lattice defects in a direction defined by the crystal axes...
7344689 Silicon wafer for IGBT and method for producing same  
A silicon wafer for an IGBT is produced by forming an ingot having an interstitial oxygen concentration [Oi] of not more than 7.0×10 17 atoms/cm 3 by the Czochralski method; doping phosphorus in...
7329317 Method for producing silicon wafer  
The present invention is to produce a silicon crystal wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that the boron concentration in the...
7326658 Method for preparing nitrogen-doped annealed wafer and nitrogen-doped and annealed wafer  
The present invention provides a method for producing a nitrogen-doped annealed wafer, wherein before a wafer sliced from a silicon single crystal doped with at least nitrogen and polished is...
7326395 Method for producing a single crystal and silicon single crystal wafer  
The present invention is a method for producing a single crystal in accordance with Czochralski method by flowing an inert gas downward in a chamber 1 of a single crystal-pulling apparatus 11 ...
7323048 Method for producing a single crystal and a single crystal  
A method for producing a single crystal in which when the single crystal is grown by Czochralski method, V/G is controlled by controlling a fluctuation of a temperature gradient G of the crystal...
7320731 Process for growing silicon single crystal and process for producing silicon wafer  
A process for growing a silicon single crystal which is capable of growing a silicon single crystal at a pulling rate which is not lower than the critical pulling rate at which an OSF-generating...
7316745 High-resistance silicon wafer and process for producing the same  
A high-resistance silicon wafer is manufactured, in which a gettering ability and economical efficiency is excellent and an oxygen thermal donor is effectively prevented from being generated in a...
7311888 Annealed wafer and method for manufacturing the same  
The present invention provides an annealed wafer which has a wafer surface layer serving as a device fabricating region and having an excellent oxide film dielectric breakdown characteristic, and a...
7300517 Manufacturing method of hydrogen-doped silicon single crystal  
A manufacturing method of a hydrogen-doped silicon single crystal. A silicon single crystal is grown under an inert atmosphere containing hydrogen in a CZ pulling furnace comprising a pull chamber...
7294196 Silicon single crystal wafer, an epitaxial wafer and a method for producing a silicon single crystal  
In a method for producing a silicon single crystal by Czochralski method, the single crystal is grown with controlling a growth rate between a growth rate at a boundary where a defect region...
7291220 Process of producing silicon wafer  
A silicon wafer made by the Czochralski method, including a ring-shaped OSF region and having nitrogen concentration ranging from 2.9×10 14 to 5.0×10 15 atoms/cm 3 and oxygen concentration of...
7282094 Method of simulation with respect to density distribution and size distribution of void defect within single crystal and oxygen precipitation nucleus within single crystal  
To precisely predict the distribution of densities and sizes of void defects comprising voids and inner wall oxide membranes in a single crystal. The computer-based simulation determines, at steps ...
7270706 Roll crusher to produce high purity polycrystalline silicon chips  
A single roll crusher for comminuting high purity materials includes a roll with teeth spaced around the circumference of the roll. The roll is rotatably mounted inside a housing. The housing has a...
7258744 Graphite heater for producing single crystal, apparatus for producing single crystal, and method for producing single crystal  
The present invention discloses a graphite heater for producing a single crystal used when producing a single crystal by the Czochralski method which comprises at least a terminal part to which...
7258739 Process for producing epitaxial silicon wafer and silicon wafer produced by process thereof  
Firstly, a silicon ingot in which boron and germanium were doped is sliced to prepare a silicon wafer and then the wafer is thermally processed by oxidation to form the thermal oxidation film on...
7255740 Method of growing hexagonal single crystals and use of same as substrates for semiconductor elements  
A method is described for making low-stress single crystals with a hexagonal crystal structure, which has a crystallographic c-axis perpendicular to a [0001] surface. A single crystal maintained at...
7244306 Method for measuring point defect distribution of silicon single crystal ingot  
A single crystal ingot is cut to an axial direction so as to including the central axis, a sample for measurement including regions [V], [Pv], [Pi] and [I] is prepared, and a first sample and...
7232484 Method and apparatus for doping semiconductors  
Semiconductor materials such as silicon particles are doped by mixing the semiconductor material with a solution having a dopan and a solvent. The solvent is removed from the wetted surface of the...
7229496 Process for producing silicon single crystal layer and silicon single crystal layer  
A thermal processing operation is performed for a silicon wafer W (silicon single-crystal layer) in an atmosphere gas which is formed by a hydrogen gas or an inert gas or a mixture gas of these...
7229495 Silicon wafer and method for producing silicon single crystal  
A method for growing a silicon single crystal ingot by a Czochralski method, which is capable of providing silicon wafers having very uniform in-plane quality and which results in improvement of...
7226571 High resistivity silicon wafer and method for fabricating the same  
A high resistivity p type silicon wafer with a resistivity of 100 Ωcm or more, in the vicinity of the surface being formed denuded zone, wherein when a heat treatment in the device fabrication...
7226507 Method for producing single crystal and single crystal  
The present invention is a method for producing a single crystal of which a whole plane in a radial direction is a defect-free region with pulling the single crystal from a raw material melt in a...
7226505 Method for vanishing defects in single crystal silicon and single crystal silicon  
A method for eliminating defects in single crystal silicon, which comprises subjecting single crystal silicon prepared by the CZ method to an oxidation treatment and then to an ultra high...
7220308 Manufacturing method of high resistivity silicon single crystal  
To suppress a fluctuation in resistivity around a target value to thereby stably manufacture high resistivity silicon single crystals having almost the same resistivity values in a manufacturing...
7217320 Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults  
The present invention relates to a process for preparing a single crystal silicon ingot, as well as to the ingot or wafer resulting therefrom. The process comprises controlling (i) a growth...
7214268 Method of producing P-doped silicon single crystal and P-doped N-type silicon single crystal wafer  
The present invention is a method of producing a P(phosphorus)-doped silicon single crystal by Czochralski method, wherein, at least, a growth of the single crystal is performed so that an Al...
7214267 Silicon single crystal and method for growing silicon single crystal  
A silicon single crystal and a method for growing a silicon single crystal are provided. A p-type silicon single crystal is grown with a uniform resistivity value in a pulling direction. Pulling is...
7211141 Method for producing a wafer  
The present invention is a method for producing a wafer comprising, at least, a BMD forming step of subjecting a silicon single crystal in a state of an ingot to heat treatment thereby to form bulk...
7208043 Silicon semiconductor substrate and preparation thereof  
A silicon semiconductor substrate has a structure possessing oxygen precipitate defects fated to form gettering sites in a high density directly below the defect-free region of void type crystals....
7208042 Method of manufacturing silicon single crystal and silicon single crystal manufactured by the method  
A silicon single crystal ingot is pulled at a pull rate so that the interior of the ingot results in a perfect region in which agglomerates of interstitial silicon-type point defects and...
7204881 Silicon wafer for epitaxial growth, an epitaxial wafer, and a method for producing it  
There are disclosed a silicon wafer for epitaxial growth wherein the wafer is produced by slicing a silicon single crystal grown with doping nitrogen according to the Czochralski method (CZ method)...
7201800 Process for making silicon wafers with stabilized oxygen precipitate nucleation centers  
A process for imparting controlled oxygen precipitation behavior to a single crystal silicon wafer. Specifically, prior to formation of the oxygen precipitates, the wafer bulk comprises dopant...
7195669 Method of producing silicon monocrystal  
A silicon single crystal rod ( 24 ) is pulled from a silicon melt ( 13 ) made molten by a heater ( 17 ), and a change in diameter of the silicon single crystal rod every predetermined time is fed...
7182809 Nitrogen-doped silicon substantially free of oxidation induced stacking faults  
A single crystal silicon, ingot or wafer form, which contains an axially symmetric region in which vacancies are the predominant intrinsic point defect, is substantially free of oxidation induced...
7160387 High purity silica crucible by electrolytic refining, and its production method and pulling method  
This invention provides a high purity silica crucible having low impurity concentration in its inner portion, and its production method. The crucible, in which at least each content of Na and Li...
7147710 Method of manufacturing epitaxial silicon wafer  
There is described a method which enables stable manufacture of a high-quality, ultra-thin epitaxial silicon wafer, as well as an epitaxial silicon wafer capable of bearing shipment manufactured by...
7141113 Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon crystal wafer  
A method for growing a silicon crystal by a Czochralsky method, wherein, let a pulling speed be V (mm/min) and an average value of an in-crystal temperature gradient in a pulling axis direction...
7125450 Process for preparing single crystal silicon using crucible rotation to control temperature gradient  
The present invention is directed to a process for preparing single crystal silicon, in ingot or wafer form, wherein crucible rotation is utilized to control the average axial temperature gradient...
7122082 Silicon wafer and manufacturing method thereof  
A silicon wafer wherein stacking fault (SF) nuclei are distributed throughout the entire in-plane direction, and the density of the stacking fault nuclei is set to a range of between 0.5×10 8 cm...
7105050 Method for the production of low defect density silicon  
A process for the preparation of a silicon single ingot in accordance with the Czochralski method. The process for growing the single crystal silicon ingot comprises controlling (i) a growth...
7097718 Single crystal silicon wafer having an epitaxial layer substantially free from grown-in defects  
Epitaxial wafers comprising a single crystal silicon substrate comprising agglomerated vacancy defects and having an axially symmetric region in which silicon self-interstitials are the predominant...
7097707 GaN boule grown from liquid melt using GaN seed wafers  
A method of making a single crystal GaN boule, comprising contacting a GaN seed wafer with a GaN source environment under process conditions including a thermal gradient in the GaN source...
7083677 Silicon seed crystal and method for manufacturing silicon single crystal  
Using a seed crystal comprising a silicon single crystal not including a vacancy excess region, a neck comprising a silicon single crystal not including a vacancy excess region is grown with a...
RE39173 Silicon single crystal wafer  
A method of making silicon single crystal wafers free of grown-in defects is provided. These wafers are formed from silicon single crystal manufactured by the Czochralski method. Careful control of...
Matches 1 - 50 out of 172 1 2 3 4 >