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8177910 System and method for crystal growing  
To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled...
8142565 Vitreous silica crucible for pulling single-crystal silicon  
A vitreous silica crucible for pulling single-crystal silicon, which is formed of vitreous silica and has a bottomed cylindrical shape, wherein, in a liquid-level movement range in the inner...
8110042 Method for manufacturing single crystal  
Using a pulling-up apparatus, an oxygen concentration of the monocrystal at a predetermined position in a pulling-up direction is controlled based on a relationship in which the oxygen...
8105436 Single crystal silicon wafer for insulated gate bipolar transistors and process for producing the same  
A single crystal silicon wafer for use in the production of insulated gate bipolar transistors is made of single crystal silicon grown by the Czochralski method and has a gate oxide with a film...
8088219 Monocrystalline semiconductor wafer comprising defect-reduced regions and method for producing it  
Monocrystalline semiconductor wafers have defect-reduced regions, the defect-reduced regions having a density of GOI-relevant defects within the range of 0/cm2 to 0.1/cm2 and occupy overall an...
8043427 Semiconductor wafers of silicon and method for their production  
Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein...
7972438 High-index UV optical materials for immersion lithography  
This invention is related to material for use as an ultraviolet (UV) optical element and particularly for use as a 193 nm immersion lens element. The material for use as a UV optical element...
7918934 Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot  
A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as...
7906443 Controlling oxygen precipitates in silicon wafers using infrared irradiation and heating  
A wafer processing method is provided that includes the steps of heating a silicon wafer containing oxygen and irradiating an infrared ray having a wavelength within a range of 7-25 μm on the ...
7875116 Silicon single crystal producing method, annealed wafer, and method of producing annealed wafer  
A method in which SSDs are reliably reduced while reducing void defects other than the SSDs on a wafer surface, which is essential for an annealed wafer, and ensuring that BMDs serving as gettering...
7862656 Apparatus and method for growing a crystal and heating an annular channel circumscribing the crystal  
An apparatus and method is provided for pulling a crystal seed from melt for growing a single crystal. The method includes the steps of providing a crucible and providing within the crucible an...
7846252 Silicon wafer for IGBT and method for producing same  
A silicon wafer for an IGBT is produced by forming an ingot having an interstitial oxygen concentration [Oi] of not more than 7.0×1017 atoms/cm3 by the Czochralski method; doping phosphorus in the ...
7842133 Single crystal growing method  
In a method of growing a single crystal by melting a raw material within a vessel under a nitrogenous and non-oxidizing atmosphere, the vessel is oscillated and the melted raw material is contacted...
7837791 Silicon single crystal wafer for particle monitor  
A silicon single crystal wafer for a particle monitor is presented, which wafer has an extremely small amount in the surface density of light point defects and is capable of still maintaining a...
7803228 Process for producing high-resistance silicon wafers and process for producing epitaxial wafers and SOI wafers  
By using oxygen-containing silicon wafers obtained by the CZ method and by combining the first heat treatment comprising controlled heat-up operation (ramping) with the second heat treatment...
7799130 Silicon single crystal ingot and wafer, growing apparatus and method thereof  
A silicon single crystal ingot growing apparatus for growing a silicon single crystal ingot based on a Czochralski method The silicon single crystal ingot growing apparatus includes a chamber; a...
7740702 Silicon wafer and method for manufacturing the same  
A silicon wafer and a method for manufacturing the same are provided, wherein the silicon wafer has no crystal defects in the vicinity of the surface and provides excellent gettering efficiency in...
7708831 Process for producing ZnO single crystal according to method of liquid phase growth  
A method for producing a ZnO single crystal by a liquid phase growth technique, comprising the steps of: mixing and melting ZnO as a solute and PbF2 and PbO as solvents; and putting a seed crystal...
7641736 Method of manufacturing SiC single crystal wafer  
A method of manufacturing an SiC single crystal wafer according to the present invention includes the steps of: (a) preparing an SiC single crystal wafer 10 with a mirror-polished surface; (b)...
7641734 Method for producing silicon single crystal  
A method of growing silicon single crystals with a [110] crystallographic axis orientation by the Czochralski method is provided according to which a silicon seed crystal doped with a high...
7632349 Silicon wafer surface defect evaluation method  
There is provided a silicon wafer surface defect evaluation method capable of readily detecting a region where small crystal defects exist, the evaluation method comprising: a rapid heat treatment...
7628854 Process for producing silicon single crystal  
A process for producing a silicon single crystal includes the steps of bringing a seed crystal into contact with a silicon melt, gradually pulling the seed crystal from the melt so as to form a...
7621996 Silicon wafer and method for producing same  
A method for producing a silicon wafer that has a carbon concentration of 5×1015 to 5×1017 atoms/cm3, interstitial oxygen concentration of 6.5×1017 to 13.5×1017 atoms/cm3, and a resistivity of 100...
7594966 Method for producing a single crystal  
A method for producing a single crystal by pulling a single crystal from a raw material melt in a chamber according to the Czochralski method, including pulling a single crystal having a...
7582160 Silicone single crystal production process  
In silicon single crystal growth by the Czochralski method using a quartz crucible, a silicon single crystals with a uniform distribution of oxygen concentration can be produced in high yield...
7563319 Manufacturing method of silicon wafer  
An active layer side silicon wafer is heat-treated in an oxidizing atmosphere to thereby form a buried oxide film therein. The active layer side silicon wafer is then bonded to a supporting side...
7544247 Lithium tantalate substrate and method of manufacturing same  
In a process for manufacturing a LT substrate from a LT crystal, after growing the crystal, a LT substrate in ingot form is imbedded in carbon power, or is place in a carbon vessel, and heat...
7537658 Method for producing epitaxial silicon wafer  
An oxide film 13 on the surface of the substrate 11 and an inner wall oxide film 112 in a COP 111 exposed to the surface of the substrate 11 are removed by cleaning the surface of the substrate 11...
7473314 Method for growing silicon single crystal  
A silicon single crystal is grown using the Czochralski method. During the crystal growth, a thermal stress is applied to at least a portion of the silicon single crystal. A gaseous substance...
7470323 Process for producing p-doped and epitaxially coated semiconductor wafers from silicon  
The Czochralski method is used for producing p−-doped and epitaxially coated semiconductor wafers from silicon, wherein a silicon single crystal is pulled, and during the pulling is doped with b...
7442253 Process for forming low defect density, ideal oxygen precipitating silicon  
The present invention is directed to a process for producing a silicon wafer which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, may form...
7435294 Method for manufacturing silicon single crystal, and silicon wafer  
A silicon single crystal is manufactured by growing said crystal composed of a defect-free area free from the Grown-in defects by the CZ process, adding a gas of a hydrogen atom-containing...
7431764 Method for pulling up single crystal  
The axial temperature gradient G at the vicinity of the solid-liquid interface 24 in an ingot is calculated in consideration of the heating value of a heater 18, the dimensions and physical...
7431765 Process for preparing single crystal silicon having improved gate oxide integrity  
A process for producing a single crystal silicon wafer comprising a front surface, a back surface, a lateral surface joining the front and back surfaces, a central axis perpendicular to the front...
7404856 Nitrogen-doped silicon substantially free of oxidation induced stacking faults  
The present invention relates to a process for forming single crystal silicon ingots or wafers that contain an axially symmetric region in which vacancies are the predominant intrinsic point...
7384477 Method for producing a single crystal and a single crystal  
The present invention is a method for producing a single crystal with pulling the single crystal from a raw material melt in a chamber by CZ method, wherein when growing the single crystal, where a...
7378071 Silicon wafer and method for producing silicon single crystal  
A method for growing a silicon single crystal ingot by a Czochralski method, which is capable of providing silicon wafers having very uniform in-plane quality and which results in improvement of...
7364618 Silicon wafer, method for manufacturing the same and method for growing silicon single crystals  
This silicon wafer is obtained from a silicon single crystal grown by the CZ method in a hydrogen-containing inert gas atmosphere, and is a completely grown-in defect-free wafer containing no COPs...
7361218 Method and apparatus for fabricating a crystal fiber  
The present invention relates to a method for fabricating a crystal fiber having different regions of polarization inversion, comprising the following steps: (a) providing a source material; (b)...
7351282 Cutting method and apparatus for ingot, wafer, and manufacturing method of solar cell  
Cutting method of ingot into wafers along cleavage plane. Onto surface of single crystal ingot 10 is implanted ion beam 23 to generate lattice defects in a direction defined by the crystal axes...
7344689 Silicon wafer for IGBT and method for producing same  
A silicon wafer for an IGBT is produced by forming an ingot having an interstitial oxygen concentration [Oi] of not more than 7.0×1017 atoms/cm3 by the Czochralski method; doping phosphorus in the ...
7329317 Method for producing silicon wafer  
The present invention is to produce a silicon crystal wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that the boron concentration in the...
7326658 Method for preparing nitrogen-doped annealed wafer and nitrogen-doped and annealed wafer  
The present invention provides a method for producing a nitrogen-doped annealed wafer, wherein before a wafer sliced from a silicon single crystal doped with at least nitrogen and polished is...
7326395 Method for producing a single crystal and silicon single crystal wafer  
The present invention is a method for producing a single crystal in accordance with Czochralski method by flowing an inert gas downward in a chamber 1 of a single crystal-pulling apparatus 11 and...
7320731 Process for growing silicon single crystal and process for producing silicon wafer  
A process for growing a silicon single crystal which is capable of growing a silicon single crystal at a pulling rate which is not lower than the critical pulling rate at which an OSF-generating...
7316745 High-resistance silicon wafer and process for producing the same  
A high-resistance silicon wafer is manufactured, in which a gettering ability and economical efficiency is excellent and an oxygen thermal donor is effectively prevented from being generated in a...
7311888 Annealed wafer and method for manufacturing the same  
The present invention provides an annealed wafer which has a wafer surface layer serving as a device fabricating region and having an excellent oxide film dielectric breakdown characteristic, and a...
7300517 Manufacturing method of hydrogen-doped silicon single crystal  
A manufacturing method of a hydrogen-doped silicon single crystal. A silicon single crystal is grown under an inert atmosphere containing hydrogen in a CZ pulling furnace comprising a pull chamber...
7294196 Silicon single crystal wafer, an epitaxial wafer and a method for producing a silicon single crystal  
In a method for producing a silicon single crystal by Czochralski method, the single crystal is grown with controlling a growth rate between a growth rate at a boundary where a defect region...
7291220 Process of producing silicon wafer  
A silicon wafer made by the Czochralski method, including a ring-shaped OSF region and having nitrogen concentration ranging from 2.9×1014 to 5.0×1015 atoms/cm3 and oxygen concentration of 1...
Matches 1 - 50 out of 192 1 2 3 4 >