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7582160 Silicone single crystal production process  
In silicon single crystal growth by the Czochralski method using a quartz crucible, a silicon single crystals with a uniform distribution of oxygen concentration can be produced in high yield...
7537658 Method for producing epitaxial silicon wafer  
An oxide film 13 on the surface of the substrate 11 and an inner wall oxide film 112 in a COP 111 exposed to the surface of the substrate 11 are removed by cleaning the surface of the...
7537657 Silicon wafer and process for producing it  
A process for producing a single-crystal silicon wafer, comprises the following steps: producing a layer on the front surface of the silicon wafer by epitaxial deposition or production of a...
7482068 Lightly doped silicon carbide wafer and use thereof in high power devices  
A uniform silicon carbide single crystal with either an n-type or a p-type conductivity. The crystal has a net carrier concentration less than 10 15 cm −3 and a carrier lifetime of at least 50...
7473314 Method for growing silicon single crystal  
A silicon single crystal is grown using the Czochralski method. During the crystal growth, a thermal stress is applied to at least a portion of the silicon single crystal. A gaseous substance...
7470323 Process for producing p-doped and epitaxially coated semiconductor wafers from silicon  
The Czochralski method is used for producing p − -doped and epitaxially coated semiconductor wafers from silicon, wherein a silicon single crystal is pulled, and during the pulling is doped with...
7442253 Process for forming low defect density, ideal oxygen precipitating silicon  
The present invention is directed to a process for producing a silicon wafer which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, may form...
7435294 Method for manufacturing silicon single crystal, and silicon wafer  
A silicon single crystal is manufactured by growing said crystal composed of a defect-free area free from the Grown-in defects by the CZ process, adding a gas of a hydrogen atom-containing...
7431765 Process for preparing single crystal silicon having improved gate oxide integrity  
A process for producing a single crystal silicon wafer comprising a front surface, a back surface, a lateral surface joining the front and back surfaces, a central axis perpendicular to the front...
7404856 Nitrogen-doped silicon substantially free of oxidation induced stacking faults  
The present invention relates to a process for forming single crystal silicon ingots or wafers that contain an axially symmetric region in which vacancies are the predominant intrinsic point...
7399428 Compositions comprising high light-output yellow phosphors and their methods of preparation  
Embodiments of the present invention are directed to compositions and processing methods of rare-earth vanadate based materials that have high emission efficiency in a wavelength range of 480 to...
7384477 Method for producing a single crystal and a single crystal  
The present invention is a method for producing a single crystal with pulling the single crystal from a raw material melt in a chamber by CZ method, wherein when growing the single crystal, where a...
7378071 Silicon wafer and method for producing silicon single crystal  
A method for growing a silicon single crystal ingot by a Czochralski method, which is capable of providing silicon wafers having very uniform in-plane quality and which results in improvement of...
7364618 Silicon wafer, method for manufacturing the same and method for growing silicon single crystals  
This silicon wafer is obtained from a silicon single crystal grown by the CZ method in a hydrogen-containing inert gas atmosphere, and is a completely grown-in defect-free wafer containing no COPs...
7344689 Silicon wafer for IGBT and method for producing same  
A silicon wafer for an IGBT is produced by forming an ingot having an interstitial oxygen concentration [Oi] of not more than 7.0×10 17 atoms/cm 3 by the Czochralski method; doping phosphorus in...
7341787 Process for producing highly doped semiconductor wafers, and dislocation-free highly doped semiconductor wafers  
The invention relates to a process for producing highly doped semiconductor wafers, in which at least two dopants which are electrically active and belong to the same group of the periodic system...
7329317 Method for producing silicon wafer  
The present invention is to produce a silicon crystal wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that the boron concentration in the...
7326395 Method for producing a single crystal and silicon single crystal wafer  
The present invention is a method for producing a single crystal in accordance with Czochralski method by flowing an inert gas downward in a chamber 1 of a single crystal-pulling apparatus 11 ...
7320731 Process for growing silicon single crystal and process for producing silicon wafer  
A process for growing a silicon single crystal which is capable of growing a silicon single crystal at a pulling rate which is not lower than the critical pulling rate at which an OSF-generating...
7311888 Annealed wafer and method for manufacturing the same  
The present invention provides an annealed wafer which has a wafer surface layer serving as a device fabricating region and having an excellent oxide film dielectric breakdown characteristic, and a...
7309393 High resistivity aluminum antimonide radiation detector  
Bulk Aluminum Antimonide (AlSb)-based single crystal materials have been prepared for use as ambient (room) temperature X-ray and Gamma-ray radiation detection.
7300517 Manufacturing method of hydrogen-doped silicon single crystal  
A manufacturing method of a hydrogen-doped silicon single crystal. A silicon single crystal is grown under an inert atmosphere containing hydrogen in a CZ pulling furnace comprising a pull chamber...
7294196 Silicon single crystal wafer, an epitaxial wafer and a method for producing a silicon single crystal  
In a method for producing a silicon single crystal by Czochralski method, the single crystal is grown with controlling a growth rate between a growth rate at a boundary where a defect region...
7291220 Process of producing silicon wafer  
A silicon wafer made by the Czochralski method, including a ring-shaped OSF region and having nitrogen concentration ranging from 2.9×10 14 to 5.0×10 15 atoms/cm 3 and oxygen concentration of...
7270706 Roll crusher to produce high purity polycrystalline silicon chips  
A single roll crusher for comminuting high purity materials includes a roll with teeth spaced around the circumference of the roll. The roll is rotatably mounted inside a housing. The housing has a...
7258744 Graphite heater for producing single crystal, apparatus for producing single crystal, and method for producing single crystal  
The present invention discloses a graphite heater for producing a single crystal used when producing a single crystal by the Czochralski method which comprises at least a terminal part to which...
7258739 Process for producing epitaxial silicon wafer and silicon wafer produced by process thereof  
Firstly, a silicon ingot in which boron and germanium were doped is sliced to prepare a silicon wafer and then the wafer is thermally processed by oxidation to form the thermal oxidation film on...
7232484 Method and apparatus for doping semiconductors  
Semiconductor materials such as silicon particles are doped by mixing the semiconductor material with a solution having a dopan and a solvent. The solvent is removed from the wetted surface of the...
7229496 Process for producing silicon single crystal layer and silicon single crystal layer  
A thermal processing operation is performed for a silicon wafer W (silicon single-crystal layer) in an atmosphere gas which is formed by a hydrogen gas or an inert gas or a mixture gas of these...
7226571 High resistivity silicon wafer and method for fabricating the same  
A high resistivity p type silicon wafer with a resistivity of 100 Ωcm or more, in the vicinity of the surface being formed denuded zone, wherein when a heat treatment in the device fabrication...
7226508 Quartz glass crucible and method for the production thereof  
A known quartz glass crucible for crystal pulling consists of a crucible wall, having an outer layer which is provided in an external area thereof with a crystallisation promoter which results in...
7226507 Method for producing single crystal and single crystal  
The present invention is a method for producing a single crystal of which a whole plane in a radial direction is a defect-free region with pulling the single crystal from a raw material melt in a...
7226505 Method for vanishing defects in single crystal silicon and single crystal silicon  
A method for eliminating defects in single crystal silicon, which comprises subjecting single crystal silicon prepared by the CZ method to an oxidation treatment and then to an ultra high...
7217320 Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults  
The present invention relates to a process for preparing a single crystal silicon ingot, as well as to the ingot or wafer resulting therefrom. The process comprises controlling (i) a growth...
7214268 Method of producing P-doped silicon single crystal and P-doped N-type silicon single crystal wafer  
The present invention is a method of producing a P(phosphorus)-doped silicon single crystal by Czochralski method, wherein, at least, a growth of the single crystal is performed so that an Al...
7211141 Method for producing a wafer  
The present invention is a method for producing a wafer comprising, at least, a BMD forming step of subjecting a silicon single crystal in a state of an ingot to heat treatment thereby to form bulk...
7208043 Silicon semiconductor substrate and preparation thereof  
A silicon semiconductor substrate has a structure possessing oxygen precipitate defects fated to form gettering sites in a high density directly below the defect-free region of void type crystals....
7208042 Method of manufacturing silicon single crystal and silicon single crystal manufactured by the method  
A silicon single crystal ingot is pulled at a pull rate so that the interior of the ingot results in a perfect region in which agglomerates of interstitial silicon-type point defects and...
7204881 Silicon wafer for epitaxial growth, an epitaxial wafer, and a method for producing it  
There are disclosed a silicon wafer for epitaxial growth wherein the wafer is produced by slicing a silicon single crystal grown with doping nitrogen according to the Czochralski method (CZ method)...
7201800 Process for making silicon wafers with stabilized oxygen precipitate nucleation centers  
A process for imparting controlled oxygen precipitation behavior to a single crystal silicon wafer. Specifically, prior to formation of the oxygen precipitates, the wafer bulk comprises dopant...
7195669 Method of producing silicon monocrystal  
A silicon single crystal rod ( 24 ) is pulled from a silicon melt ( 13 ) made molten by a heater ( 17 ), and a change in diameter of the silicon single crystal rod every predetermined time is fed...
7160386 Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot  
A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as...
7135069 Coating silicon pellets with dopant for addition of dopant in crystal growth  
An inexpensive method of coating silicon shot with boron atoms comprises (1) immersing silicon shot in an aqueous solution comprising a boric acid and polyvinyl alcohol, and (2) heating the...
7132091 Single crystal silicon ingot having a high arsenic concentration  
A single crystal silicon ingot having a constant diameter portion that contains arsenic dopant atoms at a concentration which results in the silicon having a resistivity that is less than about...
7105050 Method for the production of low defect density silicon  
A process for the preparation of a silicon single ingot in accordance with the Czochralski method. The process for growing the single crystal silicon ingot comprises controlling (i) a growth...
7083677 Silicon seed crystal and method for manufacturing silicon single crystal  
Using a seed crystal comprising a silicon single crystal not including a vacancy excess region, a neck comprising a silicon single crystal not including a vacancy excess region is grown with a...
7074270 Method for predicting the behavior of dopant and defect components  
Techniques for predicting the behavior of dopant and defect components in a substrate lattice formed from a substrate material can be implemented in hardware or software. Fundamental data for a set...
7070649 Process for producing a silicon single crystal which is doped with highly volatile foreign substances  
A process for producing a doped silicon single crystal, comprising after-doping the melt during the pulling process with a quantity of volatile dopant ΔN(t), calculated according to the equation ...
7067008 Process for the production of Cd XTe semiconductor crystals with high resistivity and resulting crystalline material  
Process for the production of semiconductor crystals with high resistivity of the CdXTe type, wherein X=Zn, Se, ZnSe or 0, characterized in that it consists in carrying out a multiple doping with...
7048796 Silicon single crystal wafer fabricating method and silicon single crystal wafer  
At the time of fabricating a silicon single crystal wafer from a nitrogen-doped silicon single crystal grown according to the Czochralski method, a silicon single crystal wafer covered with a...
Matches 1 - 50 out of 149 1 2 3 >