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6113687 |
Method for making a silicon single crystal wafer
A silicon single crystal wafer having good device characteristics can be manufactured according to the Czochralski method without formation of any dislocation cluster within a crystal surface....
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6080237 |
Method for production of dislocation-free silicon single crystal
This invention is directed to a method for the production of a dislocation-free silicon single crystal by the Czochralski method. This method attains growth of the main body part of the...
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6059875 |
Method of effecting nitrogen doping in Czochralski grown silicon crystal
A method of introducing nitrogen into a melt for use in producing a nitrogen-doped silicon single crystal by the Czochralski method includes adding a silicon material to a vessel, such as a quartz...
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6059876 |
Method and apparatus for growing crystals
the present invention provides an improved method and apparatus for doping silicon and other crystals made by the Czochralski process wherein the surface of the melt is partially enclosed or...
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6019838 |
Crystal growing apparatus with melt-doping facility
A crystal growing apparatus is able to provide dopant to a melt in the apparatus. A hopper is carrying dopant is integrated into a pull shaft of the apparatus so that dopant can be added to the...
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6013129 |
Production of heavily-doped silicon
Provided is a method for the production of a heavily-doped silicon wherein an element X whose ionic radius is larger than Si and an element Y whose ionic radius is smaller than Si are added to a Si...
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5985022 |
Optoelectric articles and a process for producing the same
Optoelectric article includes a substrate made of an optoelectric single crystal and a film of a single crystal of lithium niobate formed on the substrate by a liquid phase epitaxial process,...
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5986288 |
Epitaxial wafer for a light-emitting diode and a light-emitting diode
An epitaxial wafer for a light-emitting diode includes an n-type GaP single-crystal substrate, and at least an n-type semiconductor epitaxial layer and a p-type semiconductor epitaxial layer formed...
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5976245 |
Czochralski crystal growing system
A Czochralski crystal growing system includes components for adding dopants to semiconductor materials and for growing single crystals. The components comprise a portion formed of a material that...
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5904767 |
Neutron transmutation doping of silicon single crystals
A working recipe for NTD CZ and MCZ silicon wafer production is provided. It teaches that a neutron-enhanced S-curve can be constructed by noting that a silicon interstitial (Si I ), emitted due to...
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5840115 |
Single crystal growth method
A method of growing a single crystal of semiconductor using a CZ growth technique, having a step (0<t<t1) wherein a single crystal of semiconductor is pulled while a source material is...
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5728213 |
Method of growing a rare earth silicate single crystal
A method of growing a rare earth silicate single crystal from a melt of a starting material containing a rare earth oxide and a silicon oxide, wherein the starting material in which a density of Fe...
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5728212 |
Method of preparing compound semiconductor crystal
A compound semiconductor crystal has a reduced dislocation density. The compound semiconductor crystal doped with an impurity satisfies the following relations, wherein c.c. represents its carrier...
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5707879 |
Neutron detector based on semiconductor materials
A neutron radiation detector is described. A semiconductor material is populated with helium three ( 3 He) atoms to increase its overall neutron capture efficiency. Upon capture of a neutron by a ...
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5704974 |
Growth of silicon crystal from melt having extraordinary eddy flows on its surface
When a Si single crystal 8 is pulled up from a melt 6 received in a crucible 2, the state of eddy flows generated in the melt 6 is judged from the temperature distribution of the melt at the...
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5700320 |
Growth of silicon single crystal having uniform impurity distribution along lengthwise or radial direction
When a B or P-doped Si single crystal is pulled up from a B or P-doped melt by the Czochralski method, an element such as Ga, Sb or In having the effect to reduce the heat expansion coefficient of...
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5700321 |
Method of feeding a dopant in a continuously charging method
The object of the present invention affords a method of feeding dopant and a dopant composition used therein for easily preparing single crystals having a desired doping concentration during...
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5660627 |
Method of growing lutetium oxyorthosilicate crystals
A method for producing lutetium oxyorthosilicate crystals includes maintaining the interface between a crystal and the melt from which it is pulled substantially flat as the crystal is grown. In a...
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5609682 |
Method for the preparation of silicon single crystal
An improved method is proposed for the preparation of a semiconductor silicon single crystal of N-type by the Czochralski process, which is free from the problem of occurrence of delayed OSFs as...
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5492078 |
Process for the controlled feeding of a melting crucible with particles during the drawing of crystals by the czochralski method
In a process and a device for the controlled feeding of a melting crucible (13) with doped particles (2, 2a) during the drawing of a crystal (16) by the Czochralski method by the control of a flow...
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5462011 |
Method for pulling single crystals
A method and apparatus for pulling single crystals from a melt of semicontor material, in which a monocrystalline seed crystal grows to form a single crystal, the seed crystal being dipped into the...
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5423283 |
Method for growing antimony-doped silicon single crystal
A method for growing an antimony-doped silicon single crystal having an oxygen concentration of 12 ppma or more is employed wherein the pressure of an atmospheric inert gas within the furnace is...
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5408951 |
Method for growing silicon crystal
In an improved Czochralski process for growing silicon crystals, wherein a single-crystal silicon seed is pulled from a molten silicon source to grow the crystal therefrom, a pre-oxidized arsenic...
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5406905 |
Cast dopant for crystal growing
A dopant (76), such as antimony, is cast around a seed crystal (10) to form a seed-dopant assembly (14) that facilitates doping of a molten semiconductor (36), such as silicon, in a crystal-growing...
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5402747 |
Method of growing crystal
A single crystal material is filled in a crucible, and the whole of the single crystal material is melted to contain doping impurities. A solid layer coagulated upward from the bottom of the...
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5394828 |
Apparatus for the solidification of a doped electricity conducting material and the continuous checking of its dopant content
An apparatus for use in solidification of a doped electrically conducting material and for use in monitoring said solidification is provided. The apparatus includes a first forming means for...
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5174853 |
Forsterite single crystal and method for the manufacture of the same
In a method for manufacturing forsterite single crystals containing tetravalent chromium as luminescent ions, the method which comprises the use of chromium dioxide or comprises the use of a...
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5171400 |
Method of producing crystalline rods having regions of reversed dominant ferroelectric polarity and method for clarifying such a rod
A method of growing a single crystal rod with regions of reversed dominant ferroelectric polarities (poling the same) is described. It is a variation of laser-heated pedestal growth. The...
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5164041 |
Method of growing rare earth doped orthosilicates(LN2-XREXSIO5)
The invention is a technique for the growth of single crystals of rare earth doped rare-earth orthosilicate crystals which may be used as the laser medium in solid-state non-semiconductor lasers....
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5160401 |
Method of growing mixed crystals from melts of oxidic multicomponent systems
A method of growing mixed crystals having two lattice sites, each of which having a different number of adjoining oxygen ions, from melts of oxidic multicomponent systems, homogeneous mixed...
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5034200 |
Crystal pulling apparatus and crystal pulling method
A crystal pulling apparatus of double structure crucible has a crucible body which is divided into inner and outer chambers by a cylindrical partition wall coaxially disposed in the crucible body....
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4970060 |
Pure or mixed monocrystalline boules of lanthanum orthogallate
Monocrystalline lanthanum orthogallate compositions grown along a predetermined crystallographic direction in the form of a single crystal of a size greater than 1 cm in diameter/width and at least...
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4631234 |
Germanium hardened silicon substrate
Disclosed is a substitutionally strengthened silicon semiconductor material. A high concentration of germanium atoms is added to a silicon melt to thereby substitutionally displace various silicon...
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4591409 |
Control of nitrogen and/or oxygen in silicon via nitride oxide pressure during crystal growth
The disclosure relates to a method for producing single crystal silicon from a polycrystalline silicon melt wherein dopants such as oxygen and nitrogen are uniformly distributed in the crystal both...
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4483734 |
Method for the preparation of single crystals of gadolinium gallium garnet
In the crystal growing of GGG (gadolinium gallium garnet) by the Czochralski technique from a melt of the oxide mixture of gadolinium and gallium, zinc is added to the oxide melt as a dopant...
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4302280 |
Growing gadolinium gallium garnet with calcium ions
Monocrystalline gadolinium gallium garnet is prepared by the Czochralski growth process from a melt composed of the oxides of gadolinium and gallium. In order for this process to produce uniform...
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4224099 |
Method for producing R-plane single crystal alpha alumina
Method for producing massive unicrystalline R-plane alpha alumina of circular cross-section from an alumina melt containing additions of chromium, iron or magnesium oxides.
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4199396 |
Method for producing single crystal gadolinium gallium garnet
Method for producing virtually perfect massive unicrystalline gadolinium gallium garnet from a melt of gadolinium and gallium oxides containing an addition of calcium, magnesium or strontium ions.
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4060401 |
Method for making aligned fibrous crystals
The invention relates to siliceous materials in the form of elements of aligned elongated individual crystals and more particularly to methods of forming such elements, said methods comprising...
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4040890 |
Neodymium oxide doped yttrium aluminum garnet optical fiber
There is disclosed a technique for growing, from a melt, doped single-crystal fibers for use as lasers or other active or passive optical devices of a size that is compatible with proposed optical...
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3883313 |
MODIFIED CZOCHRALSKI-GROWN MAGNESIUM ALUMINATE SPINEL AND METHOD OF MAKING SAME
A modified, Czochralski-grown, single-crystalline spinel has a nominal composition (MgO)(Al 2 O 3 ) x , where x can be between 1 and 2.3. The spinel has an (OH) ion content in its lattice that is...
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3837911 |
MAGNETIC DEVICES UTILIZING GARNET EPITAXIAL MATERIALS AND METHOD OF PRODUCTION
Magnetic garnet compositions grown by liquid phase epitaxy have appropriate magnetic properties for use in bubble domain devices - a class of magnetic devices in which information is represented by...
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3655415 |
ASTERIATED SYNTHETIC CORUNDUM GEM STONES AND METHOD AND APPARATUS FOR THEIR PRODUCTION
Asteriated synthetic corundum gem stones are provided which have their asteriating compounds as well as coloring compounds uniformly distributed throughout the body and which are free of the heavy...
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3607752 |
PROCESS FOR THE CULTURE OF LARGE MONOCRYSTALS OF LITHIUM NIOBATE
The present invention relates to a process for cultivating larger unstressed single-domain crystals containing niobium and an alkali metal, preferably lithium. The process is conducted by the...
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3346344 |
Growth of lithium niobate crystals
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3257327 |
Process for growing neodymium doped single crystal divalent metal ion tungstates
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3053635 |
Method of growing silicon carbide crystals
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2892739 |
Crystal growing procedure
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2822308 |
Semiconductor p-n junction units and method of making the same
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3761295 |
Title is not available
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