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7628854 Process for producing silicon single crystal  
A process for producing a silicon single crystal includes the steps of bringing a seed crystal into contact with a silicon melt, gradually pulling the seed crystal from the melt so as to form a...
7608145 Method and apparatus of growing silicon single crystal and silicon wafer fabricated thereby  
Disclosed is a method of fabrication of high quality silicon single crystal at high growth rate. The method grows silicon single crystal from silicon melt by Czochralski method, wherein the silicon...
7594966 Method for producing a single crystal  
A method for producing a single crystal by pulling a single crystal from a raw material melt in a chamber according to the Czochralski method, including pulling a single crystal having a...
7582160 Silicone single crystal production process  
In silicon single crystal growth by the Czochralski method using a quartz crucible, a silicon single crystals with a uniform distribution of oxygen concentration can be produced in high yield...
7582159 Method for producing a single crystal  
A method for producing a single crystal by Czochralski method with pulling a seed crystal from a raw material melt, wherein in which a range of a pulling rate of pulling a single crystal, a...
7537658 Method for producing epitaxial silicon wafer  
An oxide film 13 on the surface of the substrate 11 and an inner wall oxide film 112 in a COP 111 exposed to the surface of the substrate 11 are removed by cleaning the surface of the...
7537657 Silicon wafer and process for producing it  
A process for producing a single-crystal silicon wafer, comprises the following steps: producing a layer on the front surface of the silicon wafer by epitaxial deposition or production of a...
7476274 Method and apparatus for making a highly uniform low-stress single crystal by drawing from a melt and uses of said crystal  
The method provides a uniform low-stress single crystal in a predetermined crystal orientation. The method of making it includes immersing a single crystal held at a temperature under its melting...
7470326 Apparatus for manufacturing silicon single crystal, method for manufacturing silicon single crystal, and silicon single crystal  
The apparatus for manufacturing a silicon single crystal includes: a crucible for storing molten silicon; a pulling-up device for pulling up a silicon single crystal from the molten silicon in the...
7442251 Method for producing silicon single crystals and silicon single crystal produced thereby  
This method for producing silicon single crystals includes: growing a silicon single crystal by the Czochralski method while cooling at least part of the silicon single crystal under growth with a...
7431764 Method for pulling up single crystal  
The axial temperature gradient G at the vicinity of the solid-liquid interface 24 in an ingot is calculated in consideration of the heating value of a heater 18 , the dimensions and physical...
7427325 Method for producing high quality silicon single crystal ingot and silicon single crystal wafer made thereby  
In a method for producing a high quality silicon single crystal by the Czochralski method, a lower portion of a solid-liquid interface of a single crystal growth is divided into a central part and...
7419545 Method for producing silicon carbide (SiC) single crystal and silicon carbide (SiC) single crystal obtained by such method  
The present invention provides a producing method with which large silicon carbide (SiC) single crystal can be produced at low cost. Silicon carbide single crystal is produced or grown by...
7361219 Method for producing silicon wafer and silicon wafer  
The present invention are a method for producing a silicon wafer having a crystal orientation <110> from a silicon single crystal ingot grown by a Floating Zone method (FZ method), wherein,...
7351282 Cutting method and apparatus for ingot, wafer, and manufacturing method of solar cell  
Cutting method of ingot into wafers along cleavage plane. Onto surface of single crystal ingot 10 is implanted ion beam 23 to generate lattice defects in a direction defined by the crystal axes...
7329317 Method for producing silicon wafer  
The present invention is to produce a silicon crystal wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that the boron concentration in the...
7326292 Quality evaluation method for single crystal ingot  
The inventive quality evaluation method for a single crystal ingot generally includes a step of determining cropping and sampling positions and a step of evaluating a sample. The step of...
7314523 Manufacturing equipment of SiC single crystal and method for manufacturing SiC single crystal  
A method for manufacturing a SiC single crystal from a SiC seed crystal is provided. The method includes the steps of: measuring a diameter of the SiC single crystal during a crystal growth of the...
7309393 High resistivity aluminum antimonide radiation detector  
Bulk Aluminum Antimonide (AlSb)-based single crystal materials have been prepared for use as ambient (room) temperature X-ray and Gamma-ray radiation detection.
7291221 Electromagnetic pumping of liquid silicon in a crystal growing process  
A method and system for use in combination with a crystal growing apparatus for growing a monocrystalline ingot according to a Czochralski process. The crystal growing apparatus has a heated...
7282094 Method of simulation with respect to density distribution and size distribution of void defect within single crystal and oxygen precipitation nucleus within single crystal  
To precisely predict the distribution of densities and sizes of void defects comprising voids and inner wall oxide membranes in a single crystal. The computer-based simulation determines, at steps ...
7264674 Method for pulling a single crystal  
An apparatus is used to pull a single crystal, wherein a flow of an inert gas to the single crystal to be grown, a pressure in an apparatus body, and a temperature environment are always kept...
7244306 Method for measuring point defect distribution of silicon single crystal ingot  
A single crystal ingot is cut to an axial direction so as to including the central axis, a sample for measurement including regions [V], [Pv], [Pi] and [I] is prepared, and a first sample and...
7235133 Method for growing single crystal of semiconductor  
By utilizing a crystal pulling apparatus for producing a single crystal according to the Czochralski method comprising at least a crucible to be charged with a raw material, a heater surrounding...
7220308 Manufacturing method of high resistivity silicon single crystal  
To suppress a fluctuation in resistivity around a target value to thereby stably manufacture high resistivity silicon single crystals having almost the same resistivity values in a manufacturing...
7214267 Silicon single crystal and method for growing silicon single crystal  
A silicon single crystal and a method for growing a silicon single crystal are provided. A p-type silicon single crystal is grown with a uniform resistivity value in a pulling direction. Pulling is...
7201800 Process for making silicon wafers with stabilized oxygen precipitate nucleation centers  
A process for imparting controlled oxygen precipitation behavior to a single crystal silicon wafer. Specifically, prior to formation of the oxygen precipitates, the wafer bulk comprises dopant...
7172656 Device and method for measuring position of liquid surface or melt in single-crystal-growing apparatus  
In a device and a method for measuring the position of the liquid surface of a melt while a single crystal is being pulled, two measuring-lines are defined in an image of a fusion ring which is...
7160386 Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot  
A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as...
7147710 Method of manufacturing epitaxial silicon wafer  
There is described a method which enables stable manufacture of a high-quality, ultra-thin epitaxial silicon wafer, as well as an epitaxial silicon wafer capable of bearing shipment manufactured by...
7125450 Process for preparing single crystal silicon using crucible rotation to control temperature gradient  
The present invention is directed to a process for preparing single crystal silicon, in ingot or wafer form, wherein crucible rotation is utilized to control the average axial temperature gradient...
7122082 Silicon wafer and manufacturing method thereof  
A silicon wafer wherein stacking fault (SF) nuclei are distributed throughout the entire in-plane direction, and the density of the stacking fault nuclei is set to a range of between 0.5×10 8 cm...
7105050 Method for the production of low defect density silicon  
A process for the preparation of a silicon single ingot in accordance with the Czochralski method. The process for growing the single crystal silicon ingot comprises controlling (i) a growth...
7074271 Method of identifying defect distribution in silicon single crystal ingot  
A surface of a reference sample is contaminated with a transition metal, and a heat treatment is performed to diffuse the transition metal in the sample. A concentration of recombination centers...
7067007 Process and device for growing single crystals  
The process for growing single crystals, wherein crystal material is melted in a crucible and a crystal nucleus is immersed in the molten crystal material and slowly pulled out, wherein the crystal...
7014704 Method for growing silicon single crystal  
A method for growing a silicon single crystal used for semiconductor integrated circuit devices, wherein the single crystal is grown by the CZ method at a nitrogen concentration of 1×10 13 ...
6997986 Method for preparing single crystal  
A method for preparing a high-quality garnet single crystal represented by the composition formula Ca x Nb y Ga z O 12 (2.9<x<3.1, 1.6<y<1.8, 3.1<z<3.3) is provided. The single...
6960254 Method to monitor and control the crystal cooling or quenching rate by measuring crystal surface temperature  
A method and apparatus for controlling the quenching rate of a monocrystalline ingot pulled from a melt by adjusting one or more post growth processing parameter. A temperature model generates a...
6942733 Fluid sealing system for a crystal puller  
A fluid sealing system is provided for use in a crystal puller for growing a monocrystalline ingot. The crystal puller has a housing, a fluid flow path contained in the housing, and a fluid passage...
6913647 Process for cooling a silicon ingot having a vacancy dominated region to produce defect free silicon  
A process for producing silicon which is substantially free of agglomerated intrinsic point defects in an ingot having a vacancy dominated region. An ingot is grown generally in accordance with the...
6913646 Silicon single crystal wafer and method for producing silicon single crystal  
There can be provided a silicon single crystal wafer grown according to Czochralski method wherein the whole plane of the wafer is occupied by N region on the outside of OSF generated in a shape of...
6896727 Method of determining nitrogen concentration within a wafer  
An improved method of determining the concentration of nitrogen within a wafer is provided. At least a portion of the nitrogen within the wafer is initially gettered to a gettering site. In order...
6869477 Controlled neck growth process for single crystal silicon  
A process for preparing a single crystal silicon in accordance with the Czochralski method, is provided. More specifically, by quickly reducing the pull rate at least once during the growth of the...
6869478 Method for producing silicon single crystal having no flaw  
A method for producing a silicon ingot having no defect over a wide range of region with stability and good reproducibility, wherein when a silicon single crystal ( 11 ) is pulled up form a silicon...
6858076 Method and apparatus for manufacturing single-crystal ingot  
There are provided a system for manufacturing a single-crystal ingot which is equipped with a cooler for cooling the single-crystal ingot being pulled and is capable of forming a tail without...
6815605 Silicon single crystal and wafer doped with gallium and method for producing them  
There can be provided according to the present invention a silicon single crystal produced according to Czochralski method to which Ga (gallium) is added as a dopant characterized in that a...
6802899 Silicon single crystal wafer and manufacturing process therefor  
There is provided a manufacturing process for a CZ silicon single crystal wafer which is subjected to heat treatment wherein slip resistance of a portion of the CZ silicon single crystal wafer in...
6800132 Silicon wafer and method for manufacture thereof, and method for evaluation of silicon wafer  
A method for producing a silicon ingot through pulling up a silicon single crystal according to the Czochralski method, wherein the silicon single crystal is pulled up while being doped with...
6776840 Method and apparatus for controlling diameter of a silicon crystal in a locked seed lift growth process  
A method and apparatus for controlling the diameter of a monocrystalline ingot as it is being pulled from a melt by changing the temperature of the melt. The ingot is pulled from the melt at a...
6767400 Crystal growth method  
In the CZ process using a cooling member surrounding a single crystal, the cooling member is permitted to effectively serve to increase a pulling speed. Cracks of the single crystal due to...
Matches 1 - 50 out of 202 1 2 3 4 5 >