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8163086 |
Halogen assisted physical vapor transport method for silicon carbide growth
A physical vapor transport growth technique for silicon carbide is disclosed. The method includes the steps of introducing a silicon carbide powder and a silicon carbide seed crystal into a...
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8137461 |
Piezoelectric substrate, piezoelectric element, liquid discharge head and liquid discharge apparatus
A piezoelectric substrate of a perovskite-type oxide is expressed by a general formula of ABO3 having a laminate structure of a single crystal structure or a uniaxial crystal structure expressed by...
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8137458 |
Epitaxial growth of ZnO with controlled atmosphere
A ZnO crystal growth method has the steps of (a) preparing a substrate having a surface capable of growing ZnO crystal exposing a Zn polarity plane; (b) supplying Zn and O above the surface of the...
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8137459 |
Method for producing nanoparticles for magnetic fluids by electron-beam evaporation and condensation in vacuum, a magnetic fluid producing method and magnetic fluid produced according to said method
The inventive method for producing nanoparticles for ferrofluids by electron-beam evaporation and condensation in vacuum, consists in evaporating an initial solid material and in fixing...
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8123859 |
Method and apparatus for producing large, single-crystals of aluminum nitride
A method and apparatus for producing bulk single crystals of AlN having low dislocation densities of about 10,000 cm−2 or less includes a crystal growth enclosure with Al and N2 source material t...
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8092596 |
Bulk GaN and AlGaN single crystals
Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with...
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8071466 |
Zinc sulfide crystals for optical components
Zinc sulfide (ZnS) single crystals and multi-grain ZnS crystals are suitable for many applications. The disclosed method produces ZnS single crystals or multi-grain ZnS crystals. More specifically,...
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7989325 |
Method for manufacturing crystalline semiconductor film and method for manufacturing thin film transistor
A crystalline semiconductor film is manufactured by a first step in which a crystalline semiconductor film is formed on and in contact with an insulating film and a second step in which the...
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7976899 |
Methods for selective deposition of graded materials on continuously fed objects
Embodiments of the invention include a selective deposition method that allows for coating of selective portions of an object, such as an electronic device, and inhibits coating of other selective...
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7931748 |
Systems and methods for the production of highly tetrahedral amorphous carbon coatings
The invention provides systems and methods for the deposition of an improved diamond-like carbon material, particularly for the production of magnetic recording media. The diamond-like carbon...
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7781032 |
Method for depositing a thin film
A method of depositing a thin film may include providing a wafer into a thin film apparatus, rotating the wafer, flowing a plasma across the wafer from edge to edge, depositing a first thin film on...
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7776152 |
Method for continuous, in situ evaluation of entire wafers for macroscopic features during epitaxial growth
Apparatus and method for growing and observing the growth of epitaxial layers on a wafer. The apparatus includes: epitaxial growth apparatus; a source of light mounted to illuminate an entire...
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7767022 |
Method of annealing a sublimation grown crystal
A crystal is sublimation grown in a crucible by way of a temperature gradient in the presence of between 1 and 200 Torr of inert gas. The pressure of the inert gas is then increased to between 300...
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7736446 |
Method for manufacturing a lanthanum oxide compound
A method for manufacturing a lanthanum oxide compound on a substrate includes: setting the number of H2O molecule, the number of CO molecule and the number of CO2 molecule to one-half or less,...
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7727332 |
Process for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices, and products obtained thereby
In a process for forming a mask material on a III-N layer, wherein III denotes an element of the group III of the Periodic Table of Elements, selected from Al, Ga and In, a III-N layer having a...
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7695564 |
Thermal management substrate
The present invention is directed to a method for fabricating a thermal management substrate having a Silicon (Si) layer on a polycrystalline diamond film, or on a diamond-like-carbon (DLC) film....
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7687798 |
Epitaxy with compliant layers of group-V species
The present invention relates a method for epitaxial growth of a second group III-V crystal having a second lattice constant over a first group III-V crystal having a first lattice constant,...
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7682670 |
Method for controlling the volume of a molecular beam
A molecular beam source for use in thin-film accumulation, which enables the adjustment of the volume of a molecular beam, which is discharged per hour by using a needle valve, to be constant...
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7648577 |
MBE growth of p-type nitride semiconductor materials
A method of growing a p-type nitride semiconductor material by molecular beam epitaxy (MBE) uses bis(cyclopentadienyl)magnesium (Cp2Mg) as the source of magnesium dopant atoms. Ammonia gas is used...
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7641998 |
Conductive mono atomic layer coatings for fuel cell bipolar plates
An electrically conductive separator element and assembly for a fuel cell which comprises an electrically conductive substrate having a monoatomic layer coating overlying the substrate. The...
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7625447 |
Method of growing semiconductor crystal
SiC is a very stable substance, and it is difficult to control the condition of a SiC surface to be suitable for crystal growth in conventional Group III nitride crystal growing apparatuses. This...
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7591897 |
Method for the rapid synthesis of large quantities of metal oxide nanowires at low temperatures
A process for the rapid synthesis of metal oxide nanoparticles at low temperatures and methods which facilitate the fabrication of long metal oxide nanowires. The method is based on treatment of...
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7556688 |
Method for achieving low defect density AlGaN single crystal boules
A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic...
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7553368 |
Process for manufacturing a gallium rich gallium nitride film
A process for the manufacture of a gallium rich gallium nitride film is described. The process comprises (a) preparing a reaction mixture containing a gallium species and a nitrogen species, the...
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7544398 |
Controlled nano-doping of ultra thin films
The invention relates to methods for producing doped thin layers on substrates comprising the steps of depositing a dopant precursor on the substrate via an atomic layer deposition technique; and...
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7504643 |
Method for cleaning a lithographic apparatus module, a cleaning arrangement and a lithographic apparatus comprising the cleaning arrangement
A cleaning arrangement for a lithographic apparatus module may be provided in a collector. The cleaning arrangement includes a hydrogen radical source configured to provide a hydrogen radical...
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7485349 |
Thin film forming method
A method for forming thin films of a semiconductor device is provided. The thin film formation method presented here is based upon a time-divisional process gas supply in a chemical vapor...
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7449065 |
Method for the growth of large low-defect single crystals
A method and the benefits resulting from the product thereof are disclosed for the growth of large, low-defect single-crystals of tetrahedrally-bonded crystal materials. The process utilizes a...
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7435297 |
Molten-salt-based growth of group III nitrides
A method for growing Group III nitride materials using a molten halide salt as a solvent to solubilize the Group-III ions and nitride ions that react to form the Group III nitride material. The...
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7419546 |
Gas diffusion electrodes, membrane-electrode assemblies and method for the production thereof
A method for forming a noble metal coating on a gas diffusion medium substantially free of ionomeric components comprising subjecting an electrically conductive web to a first ion beam having an...
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7402206 |
Method of synthesizing a compound of the formula Mn+1AXn, film of the compound and its use
A method of synthesizing or growing a compound having the general formula Mn+1AXn(16) where M is a transition metal, n is 1, 2, 3 or higher, A is an A-group element and X is carbon, nitrogen or...
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7399357 |
Atomic layer deposition using multilayers
A method for the controlled growth of thin films by atomic layer deposition by making use of multilayers and using energetic radicals to facilitate the process is described in this invention. In...
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7368067 |
P-type zinc oxide semiconductor film and process for preparation thereof
A p-type ZnO semiconductor film comprised mainly of Zn and O elements is disclosed. The film is characterized as containing an alkali metal and nitrogen. Preferably, the alkali metal is contained...
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7341628 |
Method to reduce crystal defects particularly in group III-nitride layers and substrates
Gallium Nitride layers grown as single crystals by epitaxy such as Hydride Vapor Phase Epitaxy (HVPE) contain large numbers of crystal defects such as hexagonal pits, which limit the yield and...
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7338582 |
Method for manufacturing manganese oxide nanostructure and oxygen reduction electrode using said manganese oxide nanostructure
It is an object of the present invention to provide an oxygen reduction electrode having excellent oxygen reduction catalysis ability. In a method of manufacturing a manganese oxide nanostructure...
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7279041 |
Atomic layer deposition methods and atomic layer deposition tools
An atomic layer deposition method includes positioning a plurality of semiconductor wafers into an atomic layer deposition chamber. Deposition precursor is emitted from individual gas inlets...
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7276121 |
Forming improved metal nitrides
Method and apparatus are provided for forming metal nitride (MN), wherein M is contacted with iodine vapor or hydrogen iodide (HI) vapor to form metal iodide (MI) and then contacting MI with...
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7273664 |
Preparation method of a coating of gallium nitride
The invention concerns a monocrystalline coating crack-free coating of gallium nitride or mixed gallium nitride and another metal, on a substrate likely to cause extensive stresses in the coating,...
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H002193 |
Method of growing homoepitaxial silicon carbide
A method of growing a SiC film within an MBE system is disclosed. The method includes charging a first crucible with a quality of C60, and coating a second crucible with a layer of SiC. The second...
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7182812 |
Direct synthesis of oxide nanostructures of low-melting metals
The bulk synthesis of highly crystalline noncatalytic low melting metals such as β-gallium oxide tubes, nanowires, and nanopaintbrushes is accomplished using molten gallium and microwave plasma ...
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7160529 |
Diamondoid-containing field emission devices
Novel uses of diamondoid-containing materials in the field of microelectronics are disclosed. Embodiments include, but are not limited to, thermally conductive films in integrated circuit...
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7087113 |
Textured substrate tape and devices thereof
A method for forming a sharply biaxially textured substrate, such as a single crystal substrate, includes the steps of providing a deformed metal substrate, followed by heating above the secondary...
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7077904 |
Method for atomic layer deposition (ALD) of silicon oxide film
The present invention relates to a method for forming silicon oxide films on substrates using an atomic layer deposition process. Specifically, the silicon oxide films are formed at low temperature...
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7037371 |
Method for fabricating semiconductor device
After distributing a nonmetal element in a region in the vicinity of a surface portion of a semiconductor layer, a metal film is deposited on the semiconductor layer. Next, a semiconductor-metal...
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7022182 |
Ferromagnetic p-type single-crystal zinc oxide material and manufacturing method thereof
The present invention provides a single-crystal ZnO thin film having a high ferromagnetic transition temperature. In one aspect of the present invention, the ZnO thin film comprises a ferromagnetic...
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7001459 |
Spinel-structured metal oxide on a substrate and method of making same by molecular beam epitaxy
A method of making a spinel-structured metal oxide on a substrate by molecular beam epitaxy, comprising the step of supplying activated oxygen, a first metal atom flux, and at least one other metal...
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6962624 |
Method and device for depositing in particular organic layers using organic vapor phase deposition
The invention relates to a method and a device for depositing especially, organic layers. In a heated reactor, a non-gaseous starting material that is stored in a source in the form of a container...
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6902620 |
Atomic layer deposition systems and methods
Atomic layer deposition systems and methods are disclosed utilizing a multi-wafer sequential processing chamber. The process gases are sequentially rotated among the wafer stations to deposit a...
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6899928 |
Dual ion beam assisted deposition of biaxially textured template layers
The present invention is directed towards a process and apparatus for epitaxial deposition of a material, e.g., a layer of MgO, onto a substrate such as a flexible metal substrate, using dual ion...
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6896731 |
P-type single crystal zinc-oxide having low resistivity and method for preparation thereof
The present invention provides a low-resistivity p-type single-crystal zinc oxide. An n-type dopant and p-type dopant are doped into zinc oxide with higher concentration of the p-type dopant than...
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