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7601216 |
Gas diffusion electrodes, membrane-electrode assemblies and method for the production thereof
A method for forming a patterned noble metal coating on a gas diffusion medium substantially free of ionomeric components comprising subjecting an electrically conductive web with a patterned mask...
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7591897 |
Method for the rapid synthesis of large quantities of metal oxide nanowires at low temperatures
A process for the rapid synthesis of metal oxide nanoparticles at low temperatures and methods which facilitate the fabrication of long metal oxide nanowires. The method is based on treatment of...
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7556688 |
Method for achieving low defect density AlGaN single crystal boules
A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic...
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7553372 |
Method of growing semiconductor crystal
SiC is a very stable substance, and it is difficult to control the condition of a SiC surface to be suitable for crystal growth in conventional Group III nitride crystal growing apparatuses. This...
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7553368 |
Process for manufacturing a gallium rich gallium nitride film
A process for the manufacture of a gallium rich gallium nitride film is described. The process comprises (a) preparing a reaction mixture containing a gallium species and a nitrogen species, the...
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7544398 |
Controlled nano-doping of ultra thin films
The invention relates to methods for producing doped thin layers on substrates comprising the steps of depositing a dopant precursor on the substrate via an atomic layer deposition technique; and...
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7504643 |
Method for cleaning a lithographic apparatus module, a cleaning arrangement and a lithographic apparatus comprising the cleaning arrangement
A cleaning arrangement for a lithographic apparatus module may be provided in a collector. The cleaning arrangement includes a hydrogen radical source configured to provide a hydrogen radical...
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7485349 |
Thin film forming method
A method for forming thin films of a semiconductor device is provided. The thin film formation method presented here is based upon a time-divisional process gas supply in a chemical vapor...
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7449065 |
Method for the growth of large low-defect single crystals
A method and the benefits resulting from the product thereof are disclosed for the growth of large, low-defect single-crystals of tetrahedrally-bonded crystal materials. The process utilizes a...
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7435297 |
Molten-salt-based growth of group III nitrides
A method for growing Group III nitride materials using a molten halide salt as a solvent to solubilize the Group-III ions and nitride ions that react to form the Group III nitride material. The...
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7419546 |
Gas diffusion electrodes, membrane-electrode assemblies and method for the production thereof
A method for forming a noble metal coating on a gas diffusion medium substantially free of ionomeric components comprising subjecting an electrically conductive web to a first ion beam having an...
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7402206 |
Method of synthesizing a compound of the formula Mn+1AXn, film of the compound and its use
A method of synthesizing or growing a compound having the general formula M n+1 AX n ( 16 ) where M is a transition metal, n is 1, 2, 3 or higher, A is an A-group element and X is carbon, nitrogen...
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7399357 |
Atomic layer deposition using multilayers
A method for the controlled growth of thin films by atomic layer deposition by making use of multilayers and using energetic radicals to facilitate the process is described in this invention. In...
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7368067 |
P-type zinc oxide semiconductor film and process for preparation thereof
A p-type ZnO semiconductor film comprised mainly of Zn and O elements is disclosed. The film is characterized as containing an alkali metal and nitrogen. Preferably, the alkali metal is contained...
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7341628 |
Method to reduce crystal defects particularly in group III-nitride layers and substrates
Gallium Nitride layers grown as single crystals by epitaxy such as Hydride Vapor Phase Epitaxy (HVPE) contain large numbers of crystal defects such as hexagonal pits, which limit the yield and...
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7338582 |
Method for manufacturing manganese oxide nanostructure and oxygen reduction electrode using said manganese oxide nanostructure
It is an object of the present invention to provide an oxygen reduction electrode having excellent oxygen reduction catalysis ability. In a method of manufacturing a manganese oxide nanostructure...
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7279041 |
Atomic layer deposition methods and atomic layer deposition tools
An atomic layer deposition method includes positioning a plurality of semiconductor wafers into an atomic layer deposition chamber. Deposition precursor is emitted from individual gas inlets...
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7276121 |
Forming improved metal nitrides
Method and apparatus are provided for forming metal nitride (MN), wherein M is contacted with iodine vapor or hydrogen iodide (HI) vapor to form metal iodide (MI) and then contacting MI with...
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7273664 |
Preparation method of a coating of gallium nitride
The invention concerns a monocrystalline coating crack-free coating of gallium nitride or mixed gallium nitride and another metal, on a substrate likely to cause extensive stresses in the coating,...
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H002193 |
Method of growing homoepitaxial silicon carbide
A method of growing a SiC film within an MBE system is disclosed. The method includes charging a first crucible with a quality of C 60 , and coating a second crucible with a layer of SiC. The...
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7189287 |
Atomic layer deposition using electron bombardment
Formation of a layer of material on a surface by atomic layer deposition methods and systems includes using electron bombardment of the chemisorbed precursor.
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7182812 |
Direct synthesis of oxide nanostructures of low-melting metals
The bulk synthesis of highly crystalline noncatalytic low melting metals such as β-gallium oxide tubes, nanowires, and nanopaintbrushes is accomplished using molten gallium and microwave plasma...
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7160529 |
Diamondoid-containing field emission devices
Novel uses of diamondoid-containing materials in the field of microelectronics are disclosed. Embodiments include, but are not limited to, thermally conductive films in integrated circuit...
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7087113 |
Textured substrate tape and devices thereof
A method for forming a sharply biaxially textured substrate, such as a single crystal substrate, includes the steps of providing a deformed metal substrate, followed by heating above the secondary...
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7077904 |
Method for atomic layer deposition (ALD) of silicon oxide film
The present invention relates to a method for forming silicon oxide films on substrates using an atomic layer deposition process. Specifically, the silicon oxide films are formed at low temperature...
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7060131 |
Epitaxy with compliant layers of group-V species
The present invention relates a method for epitaxial growth of a second group III-V crystal having a second lattice constant over a first group III-V crystal having a first lattice constant,...
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7048798 |
Silicon carbide single crystal and method and apparatus for producing the same
A method of producing a silicon carbide single crystal in which a sublimation raw material 40 is accommodated at the side of vessel body 12 in a graphite crucible 10, placing a seed crystal...
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7037371 |
Method for fabricating semiconductor device
After distributing a nonmetal element in a region in the vicinity of a surface portion of a semiconductor layer, a metal film is deposited on the semiconductor layer. Next, a semiconductor-metal...
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7022182 |
Ferromagnetic p-type single-crystal zinc oxide material and manufacturing method thereof
The present invention provides a single-crystal ZnO thin film having a high ferromagnetic transition temperature. In one aspect of the present invention, the ZnO thin film comprises a ferromagnetic...
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7001459 |
Spinel-structured metal oxide on a substrate and method of making same by molecular beam epitaxy
A method of making a spinel-structured metal oxide on a substrate by molecular beam epitaxy, comprising the step of supplying activated oxygen, a first metal atom flux, and at least one other metal...
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6962624 |
Method and device for depositing in particular organic layers using organic vapor phase deposition
The invention relates to a method and a device for depositing especially, organic layers. In a heated reactor, a non-gaseous starting material that is stored in a source in the form of a container...
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6902620 |
Atomic layer deposition systems and methods
Atomic layer deposition systems and methods are disclosed utilizing a multi-wafer sequential processing chamber. The process gases are sequentially rotated among the wafer stations to deposit a...
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6899928 |
Dual ion beam assisted deposition of biaxially textured template layers
The present invention is directed towards a process and apparatus for epitaxial deposition of a material, e.g., a layer of MgO, onto a substrate such as a flexible metal substrate, using dual ion...
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6896731 |
P-type single crystal zinc-oxide having low resistivity and method for preparation thereof
The present invention provides a low-resistivity p-type single-crystal zinc oxide. An n-type dopant and p-type dopant are doped into zinc oxide with higher concentration of the p-type dopant than...
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6863728 |
Apparatus for growing low defect density silicon carbide
A low defect (e.g., dislocation and micropipe) density silicon carbide (SiC) is provided as well as an apparatus and method for growing the same. The SiC crystal, grown using sublimation...
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6841003 |
Method for forming carbon nanotubes with intermediate purification steps
Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a purification step is performed on the newly formed...
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6841002 |
Method for forming carbon nanotubes with post-treatment step
Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a post-treatment step is performed on the newly formed...
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6811611 |
Esrf source for ion plating epitaxial deposition
A method and system for growing a crystalline layer on a substrate. Using an electrically-shielded RF (ESRF) source, a plasma is created and directed to a substrate inside the ESRF source. The...
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6800135 |
ZnO/sapphire substrate and method for manufacturing the same
A ZnO/sapphire substrate includes an R-plane sapphire substrate whose (0 1-1 2) planes are parallel to the surface thereof and a ZnO epitaxial film formed on the R-plane sapphire substrate. The (1...
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6790278 |
Method for preparing low-resistant p-type SrTiO3
The present invention provides a method for preparing a novel low-resistance p-type SrTiO 3 capable of opening the way for oxide electronics in combination with an already developed low-resistance...
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6758900 |
Micro three-dimensional structure, production method therefor and production device therefor
A micro three-dimensional structure capable of producing a micro three-dimensional structure (micrometer-to nanometer-order outer shape) having a complicated structure, a production method therefor...
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6743292 |
Oriented conductive oxide electrodes on SiO2/Si and glass
A thin film structure is provided including a silicon substrate with a layer of silicon dioxide on a surface thereof, and a layer of cubic oxide material deposited upon the layer of silicon dioxide...
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6720260 |
Sequential electron induced chemical vapor deposition
Ion-induced, UV-induced, and electron-induced sequential chemical vapor deposition (CVD) processes are disclosed where an ion flux, a flux of ultra-violet radiation, or an electron flux,...
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6709989 |
Method for fabricating a semiconductor structure including a metal oxide interface with silicon
A method of fabricating a semiconductor structure including the steps of: providing a silicon substrate having a surface; forming by atomic layer deposition a monocrystalline seed layer on the...
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6656573 |
Method to grow self-assembled epitaxial nanowires
Self-assembled nanowires are provided, comprising nanowires of a first crystalline composition formed on a substrate of a second crystalline composition. The two crystalline materials are...
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6638838 |
Semiconductor structure including a partially annealed layer and method of forming the same
High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating...
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6627268 |
Sequential ion, UV, and electron induced chemical vapor deposition
Ion-induced, UV-induced, and electron-induced sequential chemical vapor deposition (CVD) processes are disclosed where an ion flux, a flux of ultra-violet radiation, or an electron flux,...
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6623559 |
Method for the production of semiconductor quantum particles
A method for producing compound semiconductor quantum particles from at least a metallic element selected from Groups IIA, IIB, IIIA, IVA, and VA of the Periodic Table and at least a non-oxygen...
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6605151 |
Oxide thin films and composites and related methods of deposition
Thin oxide films are deposited on substrates by metal-organic molecular beam epitaxy (MOMBE) and can be incorporated into a variety of composite materials. The composites/films are characterized by...
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6602558 |
Non-linear optical silica thin film manufacturing method and non-linear optical silica element
A non-linear optical silica thin film ( 22 ) whose main material is SiO 2 —GeO 2 is formed by irradiating positive or negative polar particles and polarization orientation is carried out in the...
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