Matches 151 - 200 out of 343 < 1 2 3 4 5 6 7 >
Match Document Document Title
5603766 Method for producing uniaxial tetragonal thin films of ternary intermetallic compounds  
A method for making oriented thin films of a ternary intermetallic compound and such films having a tetragonal structure and generally uniaxial magnetic, optical, electronic, and mechanical...
5599389 Compound semiconductor and method of manufacturing the same  
According to this invention, there is provided a compound semiconductor substrate including, on a compound semiconductor base containing a high-concentration impurity, a high-resistance...
5588995 System for monitoring the growth of crystalline films on stationary substrates  
A system for monitoring the growth of crystalline films on stationary or rotating substrates includes a combination of some or all of the elements including a photodiode sensor for detecting the...
5565030 Method for the preparation of a superlattice multilayered film  
A novel method is proposed for the preparation of a superlattice multilayered film, which has a multilayered structure alternately consisting of epitaxially grown layers of a metal and layers of a...
5561088 Heating method and manufacturing method for semiconductor device  
In a heating method for semiconductor devices, gas is filled in a heat chamber in which a heat target (semiconductor device) is mounted, and then the gas is compressed to produce heat. The heat...
5558711 Electrode forming method for surface acoustic wave device  
An electrode forming method for a surface acoustic wave device is adapted to form a film of an electrode material on a piezoelectric substrate to be crystallographically oriented in a constant...
5554415 Substrate coating techniques, including fabricating materials on a surface of a substrate  
Energy, such as from one or more lasers, is directed at the surface of a substrate to mobilize and vaporize a constituent element (e.g., carbide) within the substrate (e.g., steel). The vaporized...
5544618 Apparatus for depositing a coating on a substrate  
An apparatus for depositing a coating on a substrate substantially eliminates the occurrence of oval defects by creating a heated tortuous path through which the source material vapors must travel...
5537951 Crystal growth method and apparatus therefor  
A crystal growth method is based on a molecular beam epitaxy method. The crystal growth method includes the steps of opening/closing a shutter member provided between a deposition source and a...
5531184 Method for producing synthetic diamond thin film, the thin film and device using it  
The present invention provides a method for producing a synthetic diamond thin film which comprises decomposing with microwave a raw material gas containing at least one compound selected from the...
5529949 Process of making thin film 2H α-sic by laser ablation  
Thin films of 2H α-silicon carbide are produced by pulsed laser ablation.
5527731 Surface treating method and apparatus therefor  
A surface treating method of the invention comprises the steps of generating mixed chemical species containing an intended chemical species of ions necessary for surface treatment by ionization of...
5512541 Method of producing an oxide superconductor single crystal film  
The present invention is directed to a method for growing a superconductive film on a superconductive substrate in order to produce a bulk single crystal. According to a preferred embodiment, an...
5510011 Method for forming a functional deposited film by bias sputtering process at a relatively low substrate temperature  
In a bias sputtering method comprising generating a plasma of a sputtering gas between a target electrode having a target thereon and a substrate electrode having a substrate for film formation...
5509189 Method for making an electrochemical cell  
An electrochemical device including a solid electrolyte and solid electrode composed of materials having different chemical compositions and characterized by different electrical properties but...
5505159 Epitaxial growth method of semiconductor crystal and molecular beam epitaxy apparatus for the same  
In an epitaxial growth of a group III-V compound semiconductor crystal, there is provided a substrate on which group III element halide molecules are adsorbed. A beam of group V element hydride...
5501175 Process for preparing high crystallinity oxide thin film  
A process for preparing an oxide thin film which has a crystalline, clean and smooth surface on a substrate. The process is conducted by using an apparatus comprising a vacuum chamber in which an...
5499599 Method for continuous control of composition and doping of pulsed laser deposited films by pressure control  
A method for growing a deposit upon a substrate of semiconductor material involves the utilization of pulsed laser deposition techniques within a low-pressure gas environment. The substrate and a...
5492080 Crystal-growth method and semiconductor device production method using the crystal-growth method  
A crystal-growth method includes a process of filling three materials separately, one being selected from a group consisting of elemental Mg, MgS and MgSe compounds, and the other two being ZnSe...
5483920 Method of forming cubic boron nitride films  
A novel method of forming large area single crystal cubic boron nitride films on a silicon substrate by first treating the surface of the substrate with atomic hydrogen and then depositing a cubic...
5482892 Method of producing white phosphorus for molecular beam epitaxy  
A phosphorus effusion cell for molecular beam epitaxy is disclosed. It consists of a vessel in which, by sublimation of red phosphorus, the vapor of this element is produced, the vessel being...
5482003 Process for depositing epitaxial alkaline earth oxide onto a substrate and structures prepared with the process  
A process and structure involving a silicon substrate utilize molecular beam epitaxy (MBE) and/or electron beam evaporation methods and an ultra-high vacuum facility to grow a layup of epitaxial...
5477809 Method of growth of CdTe on silicon by molecular beam epitaxy  
The invention provides an epitaxial growth method of CdTe on silicon by molecular beam epitaxy in which a Si(221) tilted by 6° or less toward [-1 -1 4] is used, whose surface is rinsed in an ultra...
5476811 Method of growing epitaxial layers  
A method of growing a plurality of epitaxial layers each having a property which is different from each other simultaneously on a common substrate comprises steps of forming at least a first...
5474659 Process and apparatus for generating precursor gases used in the manufacture of semiconductor devices  
Many devices, such as those based on III-V semiconductor materials, are produced utilizing gases such as arsine that require careful handling of compressed gas cylinders. This care has engendered a...
5471948 Method of making a compound semiconductor having metallic inclusions  
A doped or undoped photoresponsive material having metallic precipitates, and a PiN photodiode utilizing the material for detecting light having a wavelength of 1.3 micrometers. The PiN photodiode...
5463977 Method of and apparatus for epitaxially growing chemical compound crystal  
In a method of and an apparatus for epitaxially growing a chemical-compound crystal, a plurality of raw-material gasses are alternately introduced into a closed chamber of a crystal growing device...
5458084 X-ray wave diffraction optics constructed by atomic layer epitaxy  
X-ray wave diffraction devices are constructed using atomic layer epetaxy. A crystalline substrate is prepared with one or more surface areas on which multiple pairs of layers of material are to be...
5450813 Method for manufacturing nitrogen-doped group II-VI compound semiconductor thin films  
Nitrogen-doped group II-VI compound semiconductor thin film manufacturing method and apparatus which are applicable to an MOVPE process. The group II-VI compound semiconductor thin film...
5443033 Semiconductor crystal growth method  
A substrate is heated in a crystal growth vessel evacuated to a ultrahigh vacuum, and gases containing component elements of a crystal to be grown on the substrate are introduced into the vessel...
5439876 Method of making artificial layered high T.sub.c superconductors  
A method for making layered structures of artificial high T c superconductor compounds by which on top of a seed crystal having a lattice structure matching the lattice structure of the...
5438037 Method for depositing another thin film on an oxide thin film having perovskite crystal structure  
A method for depositing a thin film of a material on an oxide thin film having a perovskite type crystal structure formed on a substrate comprising steps of depositing a seed layer of a single...
5432124 Method of manufacturing compound semiconductor  
There is provide a method of manufacturing a compound semiconductor (MBE) that can make the substrate surface of the semiconductor highly clean and plane so that no impurity may be left between the...
5422304 Method for producing a thin film, and a semiconductor device having the thin film  
Chalcopyrite compound semiconductor thin films represented by I-III-VI 2 -x V x or I-III-VI 2 -x VII x , and semiconductor devices having a I-III-VI 2 /I-III-VI 2 -x V x or I-III-VI 2 /I-III-VI...
5415128 Rotation induced superlattice  
This invention describes a multi-deposition system, whereby directing elemental or molecular source fluxes across a substrate in an asymmetrical manner and rotating the substrate at low rotation...
5403819 MBE method for preparing high Tc superconducting thin films  
A method for preparing a thin film formed of an oxide superconductor on a substrate by emitting molecular beams of constituent elements of the oxide superconductor to the substrate under high...
5399521 Method of semiconductor layer growth by MBE  
Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of integrated mass spectormeter (204) signals. Examples include III-V compound structures with multiple AlAs,...
5384152 Method for forming capacitors with roughened single crystal plates  
A capacitor is provided having a substrate and a first capacitor plate including a lattice mismatched crystalline material is formed over and supported by a surface of the substrate. A layer of...
5379719 Method of deposition by molecular beam epitaxy  
A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a...
5372658 Disordered crystalline semiconductor  
A semiconductor material having a disordered structure consists of a semiconductor material on which epitaxial growth is possible. The semiconductor material has an energy band structure...
5367980 Method of producing defect-free perfect surfaces  
A basic sample having a surface is set in an ultrahigh vacuum chamber. Atoms constituting the sample are deposited on the surface of the sample to remove vacancy-type defects. A laser beam having a...
5365054 Optical detector having a plurality of matrix layers with cobalt disilicide particles embedded therein  
Silicon and metal are coevaporated onto a silicon substrate in a molecular beam epitaxy system with a larger than stoichiometric amount of silicon so as to epitaxially grow particles of metal...
5362672 Method of forming a monocrystalline film having a closed loop step portion on the substrate  
A method of manufacturing a semiconductor device, and particularly a method of forming a monocrystalline film on a substrate. The method includes the step of forming a conductor layer having a step...
5360764 Method of fabricating laser controlled nanolithography  
A method of depositing atoms on a substrate in which a beam of atoms is optically focused utilizing a laser beam. The laser beam is used to form a standing wave above the surface of a substrate. As...
5356831 Method of making a monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate  
A semiconductor device and processing technique is provided for monolithic integration of a single crystal compound element semiconductor on a ceramic substrate. A high resistivity semi-insulating...
5354708 Method of nitrogen doping of II-VI semiconductor compounds during epitaxial growth using an amine  
The concentration of N acceptors in an as-grown epitaxial layer of a II-VI semiconductor compound is enhanced by the use of tertiary butyl amine as the dopant carrier, and is further enhanced by...
5352330 Process for producing nanometer-size structures on surfaces using electron beam induced chemistry through electron stimulated desorption  
The process of using electron beam induced stimulated desorption chemistry to produce structures of nanometer order size on surfaces. By passivating a reconstructed surface and selectively removing...
5336361 Method of manufacturing an MIS-type semiconductor device  
Disclosed is a method of manufacturing an MIS-type semiconductor device having a greatly reduced interface state density. In this method, before the formation of a gate insulating film, the surface...
5330611 Cubic boron nitride carbide films  
Thin films of cubic boron nitride carbide are provided on an underlying silicon substrate. The cubic boron nitride carbide films are deposited using laser ablation methods. The boron nitride film...
5326424 Cubic boron nitride phosphide films  
Thin films of single crystal, cubic boron nitride phosphide are provided on, and in crystallographic registry with, an underlying silicon substrate which is oriented along a single crystallographic...
Matches 151 - 200 out of 343 < 1 2 3 4 5 6 7 >