Matches 101 - 150 out of 342 < 1 2 3 4 5 6 7 >
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5989339 MBE system and semiconductor device fabricated, using same  
A molecular beam epitaxy system having a plurality of chambers which contain at least a first chamber and a second chamber. The first chamber is used to form II-VI column compound semiconductor...
5980631 Method for manufacturing III-V semiconductor layers containing nitrogen  
A method for manufacturing III-V semiconductor layers containing nitrogen whereby during the growth of the layers, the setting of the material sources for Al, In and Ga remains fixed. During the...
5976958 Method for growth of in situ p-type semiconductor films using a group V flux  
A method of growing a p-type doped Group II-VI semiconductor film includes the steps of forming a lattice comprising a Group II material and a Group VI material and generating a first Group V flux...
5935374 Electronic device fabrication apparatus  
An electronic device fabrication apparatus a reaction chamber; a cathode electrode and an anode electrode opposed to each other in the reaction chamber; a gas introduction pipe introduced into the...
5932006 BaF.sub.2 /GaAs electronic components  
Metal insulator semiconductor field effect transistors (MISFETs), charge coupled devices (CCDs), and capacitors based on an epitaxial barium fluoride (BF 2 ) insulator layer deposited directly onto...
5907792 Method of forming a silicon nitride layer  
A method of forming a silicon nitride layer or film on a semiconductor wafer structure includes forming a silicon nitride layer on the surface of a wafer structure using a molecular beam of high...
5900057 Planar waveguide and a process for its fabrication  
A planar waveguide and a process for making a planar waveguide is disclosed. The waveguide has a layer of dope host material formed on a substrate. The host material is a trivalent material such as...
5891241 Synthesis of diamond single crystal from hydrogenated amorphous carbon  
Hydrogenated amorphous carbon mainly composed of sp 3 structure is prepared by adding hydrogen to carbon or decomposing hydrogenated carbon gas, and then rapidly cooling the mixed or decomposed...
5891243 Production of heavy doped ZnSe crystal  
In a process for growing a ZnSe crystal by an MBE or MOCVD process, N 2 gas dissociated by electromagnetic waves and vapor In are prepared at a ratio of N:In being 2:1. The atomic gases may be...
5888294 Epitaxial growth rate varying method for side surface of semiconductor pattern  
An improved epitaxial growth rate varying method for a side surface of a semiconductor pattern capable of controlling a growth rate of a side surface of a semiconductor pattern by controlling the...
5885665 VO.sub.2 precipitates for self-protected optical surfaces  
A method for forming crystallographically coherent precipitates of vanadium dioxide in the near-surface region of sapphire and the resulting product is disclosed. Ions of vanadium and oxygen are...
5879450 Method of heteroepitaxial growth of beta silicon carbide on silicon  
A method and an apparatus have been developed to deposit heteroepitaxial beta-silicon carbide films on silicon using bias-assisted hot filament chemical vapor deposition (BA-HFCVD). The apparatus...
5855669 Method for fabricating grating coupler  
A grating coupler is formed by growing an optical waveguide layer on a substrate by an epitaxial growing process such as a metalorganic chemical vapor deposition and a molecular beam deposition....
5849079 Diamond film growth argon-carbon plasmas  
A method and system for manufacturing diamond film. The method involves forming a carbonaceous vapor, providing a gas stream of argon, hydrogen and hydrocarbon and combining the gas with the...
5830270 CaTiO.sub.3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class  
A structure including a film of a desired perovskite oxide which overlies and is fully commensurate with the material surface of a semiconductor-based substrate and an associated process for...
5827802 Method of depositing monomolecular layers  
Method of vacuum depositing a monomolecular layer on a surface, the monomolecular layer comprising at least one element selected from groups IIa, IIIa, IVa, VIIIa, Ib, IIb, IIIb, Vb of the periodic...
5814149 Methods for manufacturing monocrystalline diamond films  
A method is related to grow monocrystalline diamond films by chemical vapor deposition on large area at low cost. The substrate materials are either bulk single crystals of Pt or its alloys, or...
5792270 Apparatus for forming a pattern of nucleation sites  
A method and apparatus for producing a pattern of nucleation sites is disclosed. The method enables the growth of single crystal layers of a desired orientation on a suitable amorphous and/or...
5788767 Method for forming single sin layer as passivation film  
The present invention is a method for using a single SiN layer as a passivation film. The single layer SiN can be strengthened to withstand stress by adjusting the process parameters during...
5785756 Process for fabricating structurally robust optical coatings  
A novel molecular beam epitaxy deposition process for precisely growing structurally robust films and coatings containing germanium and various fluoride compounds for use as an optical filter. The...
5772759 Process for producing p-type doped layers, in particular, in II-VI semiconductors  
Disclosed is a process for producing p-type doped layers, in particular, in II-VI semiconductors, in which the p-type doped layer is produced in a CVD-step by means of plasma activation of...
5773085 Method of manufacturing ternary compound thin films  
One kind of element belonging to I group or II group and one kind of binary compound including one kind of element belonging to III group and one kind of element selected from the group consisting...
5772760 Method for the preparation of nanocrystalline diamond thin films  
A method and system for manufacturing nanocrystalline diamond film on a substrate such as field emission tips. The method involves forming a carbonaceous vapor, providing a gas stream of argon,...
5772758 Near real-time extraction of deposition and pre-deposition characteristics from rotating substrates and control of a deposition apparatus in near real-time  
Methods and apparatus are provided for monitoring deposition and pre-deposition characteristics such as the growth rates, oxide desorption, surface reconstruction, anion surface exchange reaction...
5766345 Epitaxial growth method of semiconductor  
An epitaxial growth method of semiconductor can reliably avoid irregularities from being produced when a II-VI compound semiconductor is grown epitaxially. When this method is applied to a method...
5762706 Method of forming compound semiconductor device  
The present invention includes a process of growing a compound semiconductor layer locally, after applying radical particles that do not become an etchant of a compound semiconductor layer to an...
5759266 Method for growing a CdTe layer on a Si substrate by a molecular beam epitaxy  
In a method for growing a CdTe layer on a clean surface of a Si substrate, the clean surface of the Si substrate is subjected to an irradiation of As at a temperature in the range of about 650° C....
5753040 Method for the growth of epitaxial metal-insulator-metal-semiconductor structures  
In one form of the invention, a method for the growth of an epitaxial insulator-metal structure on a semiconductor surface comprising the steps of maintaining the semiconductor surface at a...
5733370 Method of manufacturing a bicrystal cluster magnetic recording medium  
A magnetic recording medium comprising a magnetic alloy layer having a bicrystal cluster microstructure and, hence, reduced medium noise, is formed by depositing a seed layer on a glass or a...
5714008 Molecular beam epitaxy source cell  
Apparati and methods for varying the flux of a molecular beam emanating from an effusion cell are disclosed. The apparatus includes a means for controllably adjusting the angular distribution of a...
5714006 Method of growing compound semiconductor layer  
A method of growing a compound semiconductor layer includes epitaxially growing a III-V compound semiconductor layer including nitrogen (N) for as the Group V element on a front surface of a...
5705224 Vapor depositing method  
A vapor deposition apparatus and method in which pulse waveform light is applied to a sample sealed in a reaction chamber. The sample is exposed to gaseous material while the pulse waveform light...
5690737 Process for forming epitaxial BaF.sub.2 on GaAs  
A process for growing single crystal epitaxial BaF 2 layers on gallium rsenide substrates by slowly reacting Ba, BaCl 2 , Bal 2 , BaBr 2 , BaF 2 BaCl 2 , BaF 2 BaBr 2 , BaF 2 BaI 2 ,...
5660628 Method of manufacturing semiconductor epitaxial wafer  
There is provided a method for suppressing generation of cracks or damages on a compound semiconductor epitaxial wafer during an epitaxial growth due to growth of an epitaxial layer on the rear...
5660697 Electroluminescent display device and method of manufacturing same  
An electroluminescent display device with decreased voltage requirements comprises: (a) a substrate having a major surface; (b) a first electrode disposed over the major surface of the...
5656538 Halide dopant process for producing semi-insulating group III-V regions for semiconductor devices  
A process for growing semi-insulating layers of indium phosphide and other group III-V materials through the use of halide dopant or etchant introduction during growth. Gas phase epitaxial growth...
5657335 P-type gallium nitride  
Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type...
5648127 Method of applying, sculpting, and texturing a coating on a substrate and for forming a heteroepitaxial coating on a surface of a substrate  
Energy, such as from one or more lasers, is directed at the surface of a substrate to mobilize and vaporize a constituent element (e.g., carbide) within the substrate (e.g., steel). The vaporized...
5637530 II-VI compound semiconductor epitaxial layers having low defects, method for producing and devices utilizing same  
Epitaxial layers of II-VI semiconductor compounds having low incidence of lattice defects such as stacking faults are produced by first depositing a fraction of a monolayer of the cation species of...
5637146 Method for the growth of nitride based semiconductors and its apparatus  
A method for the growth of semiconducting nitrides, such as GaN, InN, AlN, and their alloys, in an ultra-high vacuum chamber, wherein low energy atomic nitrogen is generated by a plasma-excited...
5635243 Method of coating an organic substrate  
Energy, such as from one or more lasers, is directed at the surface of a substrate to mobilize and vaporize a constituent element (e.g., carbide) within the substrate (e.g., steel). The vaporized...
5633194 Low temperature ion-beam assisted deposition methods for realizing SiGe/Si heterostructure  
A low temperature ion-beam assisted deposition process, comprising the steps of cleaning at least one substrate, subjecting the substrate to a vacuum of at least 2×10 -4 Torr, heating the...
5633193 Method of making an InP-based device comprising semiconductor growth on a non-planar surface  
Heteroepitaxial growth of phosphorus-containing III/V semiconductor material (e.g., InGaAsP) on a non-planar surface of a different phosphorus-containing III/V semiconductor material (e.g., InP) is...
5633192 Method for epitaxially growing gallium nitride layers  
An epitaxial growth system comprises a housing around an epitaxial growth chamber. A substrate support is located within the growth chamber. A gallium source introduces gallium into the growth...
5620512 Diamond film growth from fullerene precursors  
A method and system for manufacturing diamond film. The method involves forming a fullerene vapor, providing a noble gas stream and combining the gas with the fullerene vapor, passing the combined...
5616177 Group II-VI semiconductor laser and method for the manufacture thereof  
In a Group II-VI semiconductor laser based on MgZnSSe, CdZnSSe, and MgCdZnSSe, adsorption layers containing crystal structure elements and doping impurities are successively grown as crystals on an...
5616179 Process for deposition of diamondlike, electrically conductive and electron-emissive carbon-based films  
A process for depositing amorphous or nanophase diamondlike carbon (DLC) and a-C:H carbon/hydrogen films with variable and controllable properties on the surface of a substrate is disclosed. The...
5607560 Diamond crystal forming method  
A diamond crystal forming method with which a diamond crystal is formed on a substrate by a sputtering process uses high-frequency energy in the frequency range of 40 MHz to 250 MHz to form plasma.
5603765 Method of growing high breakdown voltage allnas layers in InP devices by low temperature molecular beam epitaxy  
High breakdown voltages for AlInAs layers in InP-based devices, such as a gate layer in an InP HEMT or a collector layer in a heterojunction bipolar transistor, are achieved by growing the AlInAs...
5603766 Method for producing uniaxial tetragonal thin films of ternary intermetallic compounds  
A method for making oriented thin films of a ternary intermetallic compound and such films having a tetragonal structure and generally uniaxial magnetic, optical, electronic, and mechanical...
Matches 101 - 150 out of 342 < 1 2 3 4 5 6 7 >