Matches 51 - 100 out of 342 < 1 2 3 4 5 6 7 >
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6602558 Non-linear optical silica thin film manufacturing method and non-linear optical silica element  
A non-linear optical silica thin film ( 22 ) whose main material is SiO 2 —GeO 2 is formed by irradiating positive or negative polar particles and polarization orientation is carried out in the...
6599361 GaN selective growth on SiC substrates by ammonia-source MBE  
A method is described for selectively depositing a GaN epitaxial layer on a substrate. The substrate is first patterned with a seed layer, preferably of AlN, and then the GaN epitxial layer is...
6592831 Vaporization and cracker cell method and apparatus  
A method and apparatus for vaporizing and cracking chemical elements for use in a deposition process. The apparatus includes a vaporization cell integrally connected with a thermal cracker cell....
6579359 Method of crystal growth and resulted structures  
A method is disclosed for fabricating monocrystal material with the bandgap width exceeding 1.8 eV. The method comprises the steps of processing a monocrystal semiconductor wafer to develop a...
6569534 Optical material and optical element using the same  
An optical material including a crystalline silicon and Fe x Si 2 in the form of dots, islands, or a film is provided. The Fe x Si 2 has a symmetrical monoclinic crystalline structure belonging...
6562124 Method of manufacturing GaN ingots  
A novel method for growing semiconductor material including GaN is disclosed. The method involves placing a first substance into a growth reactor, supplying a second gaseous substance into the...
6527858 P-type ZnO single crystal and method for producing the same  
A p-type ZnO single crystal having a low resistance; and a method for producing the same providing a substrate ( 2 ) in a vacuum chamber ( 1 ), supplying to the substrate ( 2 ) atomic gases of Zn,...
6524643 Method for preparing layered structure including oxide superconductor thin film  
The invention provides a method for preparing a layered structure comprising a lower thin film composed of an oxide superconductor and an upper thin film composed of a material different from the...
6524651 Oxidized film structure and method of making epitaxial metal oxide structure  
A stable oxidized structure and an improved method of making such a structure, including an improved method of making an interfacial template for growing a crystalline metal oxide structure, are...
6503610 Group III-V compound semiconductor and method of producing the same  
Provided is a method of producing a group III-V compound semiconductor having a low dislocation density without increasing the thickness of a re-grown layer, the method includes a re-growing...
6475277 Group III-V nitride semiconductor growth method and vapor phase growth apparatus  
A vapor phase growth apparatus 1 for growing a group III-V nitride semiconductor (GaN) comprises a reaction ampoule 3 having a container 11 disposed therein for containing a group III element...
6475278 Molecular beam source and molecular beam epitaxy apparatus  
A molecular beam source comprising a crucible having an opening, and a heater mounted to the crucible for evaporating by heating a molecular beam generating material accommodated in the crucible to...
6454855 Method for producing coated workpieces, uses and installation for the method  
The method is characterized in that layers of sufficient quality for epitaxy are placed on workpieces, at a considerably increased deposition rate. To this end, instead of a UHV-CVD or ECR-CVD...
6447606 Method for producing a single-crystalline film of KLN or KLNT  
A method for producing a single-crystalline film made of a single crystal of lithium potassium niobate-lithium potassium tantalate solid solution or a single crystal of lithium potassium niobate,...
6428621 Method for growing low defect density silicon carbide  
A low defect (e.g., dislocation and micropipe) density silicon carbide (SiC) is provided as well as an apparatus and method for growing the same. The SiC crystal, growing using sublimation...
6406539 Process for producing silicon carbide single crystal and production apparatus therefor  
A process for producing a silicon carbide single crystal and a production apparatus therefor which enable, under stable conditions, continuous production of a silicon carbide single crystal which...
6383288 Method of forming diamond film  
A method of forming a diamond film includes synthesizing a diamond film on a surface of a substrate, where the surface of the substrate has trenches. The trenches inhibit delamination of the...
6379472 Group III-nitride thin films grown using MBE and bismuth  
The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium...
6368406 Nanocrystalline intermetallic powders made by laser evaporation  
A method of making intermetallic nanoparticles comprising subjecting a starting material to laser energy so as to form a vapor and condensing the vapor so as to form intermetallic nanoparticles....
6368983 Multi-layer wafer fabrication  
The invention provides a method of fabricating a wafer including growing a single crystal layer comprising a III-V compound in a first chamber at a temperature above 350° C. A temperature of a...
6358822 Method of epitaxially growing III-V compound semiconductor containing nitrogen and at least another group V element utilizing MBE  
A method of manufacturing a compound semiconductor is provided which can produce a mixed crystal layer with high nitrogen content without lowering the crystallinity when a III-V compound...
6344084 Combinatorial molecular layer epitaxy device  
A combinatorial molecular layer epitaxy apparatus is provided which includes a common chamber ( 22 ) having pressure therein controllable; one or more conveyable substrate heating units ( 36 )...
6306212 Gallium arsenide semiconductor devices fabricated with insulator layer  
An insulator layer for single crystal gallium arsenide substrates in which the insulator layer is compliantly matched with the substrate and the insulator layer is free of defects causing surface...
6270568 Method for fabricating a semiconductor structure with reduced leakage current density  
A method for fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12); forming an interface including a seed layer (18) adjacent to the...
6241821 Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon  
A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14)...
6238482 Method of producing a wafer with an epitaxial quality layer and device with epitaxial quality layer  
A method of making a wafer is provided. A first semiconductor film is formed onto a semiconductor substrate. An epitaxial film is formed onto an epitaxial wafer. The epitaxial wafer is placed with...
6224669 Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon  
A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14)...
6206962 Semiconductor light emitting device and method of manufacturing same  
An n-type cladding layer, the first guiding layer, an active layer, the second guiding layer, a p-type cladding layer, a backing layer, a contact layer, a superlattice layer and a cap layer are...
6194353 Process for preparing superconducting thin film formed of oxide superconductor material  
A process for preparing an oxide superconductor thin film which has a high crystalline, clean and excellent superconductive surface on a substrate by MBE. The MBE is effected under a condition that...
6183552 Crystal growth method for thin films of BiSrCaCuO oxides  
A crystal growth method for thin films of oxides wherein a vapor-phase deposition method is used to grow crystals for Bi 2 Sr 2 Ca n Cu n +1 O 6 +2n oxide thin film 304, where n is an integer...
6176926 Laser processing method  
A laser irradiating apparatus includes a cylindrical lens group that divides a laser beam and a cylindrical lens that re-couples a laser beam as divided. The cylindrical lens is shaped in a...
6172008 Process for preparing high crystallinity oxide thin film  
A process for preparing an oxide thin film which has a crystalline, clean and smooth surface on a substrate. The process is conducted by using an apparatus comprising a vacuum chamber in which an...
6146458 Molecular beam epitaxy method  
A method of growing a layer of Group III nitride material on a substrate by molecular beam epitaxy includes the steps of (i) disposing a substrate in a vacuum chamber, (ii) reducing the pressure in...
6113691 Ultra-low pressure metal-organic vapor phase epitaxy (MOVPE) method of producing II-IV semiconductor compounds and II-VI semiconductor compounds thus produced  
Semiconductor compounds and a method for producing the same are provided wherein a method for growing at least one epitaxial layer of a II-VI semiconductor compound using MOVPE is used, the method...
6113690 Method of preparing crystalline alkaline earth metal oxides on a Si substrate  
A method of preparing crystalline alkaline earth metal oxides on a Si substrate wherein a Si substrate with amorphous silicon dioxide on a surface is provided. The substrate is heated to a...
6110840 Method of passivating the surface of a Si substrate  
A method of passivating the surface of a Si wafer is disclosed including the steps of cleaning the surface of the Si wafer and depositing an alkaline earth metal on the clean surface at a wafer...
6106615 Method of forming biaxially textured alloy substrates and devices thereon  
Specific alloys, in particular Ni-based alloys, that can be biaxially textured, with a well-developed, single component texture are disclosed. These alloys have a significantly reduced Curie point,...
6106613 Semiconductor substrate having compound semiconductor layer, process for its production, and electronic device fabricated on semiconductor substrate  
In a semiconductor substrate comprising a silicon substrate having a porous region, and a semiconductor layer provided on the porous region, the semiconductor layer comprises a single-crystal...
6103010 Method of depositing a ferromagnetic film on a waveguide and a magneto-optic component comprising a thin ferromagnetic film deposited by the method  
A thin ferromagnetic film is deposited directly onto the surface of a waveguide. The crystalline orientation of the ferromagnetic film is restricted to a predetermined orientation by pulverizing...
6099640 Molecular beam epitaxial growth method  
A method of promoting evaporation of excess indium from a surface of an indium containing compound semiconductor single crystal layer during a discontinuation of a molecular beam epitaxial growth....
6090358 Crystalline Si.sub.x C.sub.y N.sub.z and method for synthesis  
A novel material Si X C y N z , having a crystal structure similar to that of a.Si 3 N 4 with carbon atoms substituting most of the Si sites, is synthesized in crystalline form onto crystalline...
6068739 Method of manufacturing data recording medium made of ordered alloy thin film  
A method of manufacturing a data recording medium for recording and reproducing data by use of a magnetic field or light and formed of an ordered alloy thin film comprising the steps of forming at...
6054063 Method for plasma treatment and apparatus for plasma treatment  
The high-frequency electric field is subjected to pulse modulation for 10 to 100 μsec; the rise time of pulse is controlled to be not shorter than 2 μsec but not longer than 50 μsec; and the...
6037614 Methods for manufacturing group IV element alloy semiconductor materials and devices that include such materials  
Sn x Ge 1 -x alloys that are substantially free of compositional inhomogeneities and Sn segregation, and have a measurable direct band gap. Methods for making the Sn x Ge 1 -x alloys are also...
6033471 Metallic thin flim and method of manufacturing the same, and surface acoustic wave device using the metallic thin film and the method thereof  
By using a dual ion-beam sputtering apparatus, an aluminum thin-film is formed on a glass substrate made of an amorphous material. While radiating an ion beam for assisting the film formation from...
6022410 Alkaline-earth metal silicides on silicon  
A method of forming a thin silicide layer on a silicon substrate 12 including heating the surface of the substrate to a temperature of approximately 500° C. to 750° C. and directing an atomic...
6013129 Production of heavily-doped silicon  
Provided is a method for the production of a heavily-doped silicon wherein an element X whose ionic radius is larger than Si and an element Y whose ionic radius is smaller than Si are added to a Si...
6007623 Method for making horizontal magnetic recording media having grains of chemically-ordered FePt or CoPt  
A method for producing a horizontal magnetic recording medium that has as its magnetic film a granular film with grains of a chemically-ordered FePt or FePtX (or CoPt or CoPtX) alloy in the...
5993542 Method for growing nitride III-V compound semiconductor layers and method for fabricating a nitride III-V compound semiconductor substrate  
A method for fabricating nitride III-V compound semiconductor layers of substrate, of GaN for example, comprises the steps of: growing a first B w Al x Ga y In z N layer 2 (where 0≤w≤1,...
5989511 Smooth diamond films as low friction, long wear surfaces  
An article and method of manufacture of a nanocrystalline diamond film. The nanocrystalline film is prepared by forming a carbonaceous vapor, providing an inert gas containing gas stream and...
Matches 51 - 100 out of 342 < 1 2 3 4 5 6 7 >