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7615203 |
Single crystal diamond
A single crystal diamond grown by vapor phase synthesis, wherein when one main surface is irradiated with a linearly polarized light considered to be the synthesis of two mutually perpendicular...
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7611579 |
Systems and methods for synthesis of extended length nanostructures
A system for synthesizing nanostructures using chemical vapor deposition (CVD) is provided. The system includes a housing, a porous substrate within the housing, and on a downstream surface of the...
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7608539 |
ALD method and apparatus
A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low...
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7601215 |
Method for rapid, controllable growth and thickness, of epitaxial silicon films
A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the...
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7582161 |
Atomic layer deposited titanium-doped indium oxide films
An apparatus and methods of forming the apparatus include a film of transparent conductive titanium-doped indium oxide for use in a variety of configurations and systems. The film of transparent...
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7553373 |
Silicon carbide single crystal and production thereof
A method of producing a silicon carbide single crystal, having:
fixing a seed crystal, including setting a seed crystal on a seed crystal fixing part with interposition of an adhesive;...
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7553372 |
Method of growing semiconductor crystal
SiC is a very stable substance, and it is difficult to control the condition of a SiC surface to be suitable for crystal growth in conventional Group III nitride crystal growing apparatuses. This...
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7553370 |
Crystal growth method for nitride semiconductor and formation method for semiconductor device
Methods of crystal growth for semiconductor materials, such as nitride semiconductors, and methods of manufacturing semiconductor devices are provided. The method of crystal growth includes forming...
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7547359 |
Method of altering crystal structure of group 13 element nitride, group 13 element nitride and structure material containing cubic nitride
An aerosol of a powder composed of helium carrier gas and particles of a hexagonal aluminum nitride is charged through a transfer pipe 3 into a film deposition chamber 4 whose interior is...
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7540920 |
Silicon-containing layer deposition with silicon compounds
Embodiments of the invention generally provide a composition of silicon compounds and methods for using the silicon compounds to deposit a silicon-containing film. The processes employ introducing...
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7537660 |
Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, manufacturing method of thin film transistor, and manufacturing method of matrix circuit substrate of display
A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a...
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7534412 |
Large-volume CaF2 single crystals with reduced scattering and improved laser stability, and uses thereof
Single crystals with low scattering, small refractive index differences and few small angle grain boundaries have a bi-directional scattering distribution function value (BSDF) of less than 1.5*10...
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7524372 |
Method for manufacturing diamond single crystal substrate
A method for manufacturing a diamond single crystal substrate, in which a single crystal is grown from a diamond single crystal serving as a seed substrate by vapor phase synthesis, said method...
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7517406 |
Magnetic garnet material, faraday rotator, optical device, bismuth-substituted rare earth-iron-garnet single-crystal film and method for producing the same and crucible for producing the same
Proposed is a technique of producing a magnetic garnet material of which the light absorption characteristics worsen little even though it is produced through LPE. The crucible for LPE is formed of...
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7514342 |
Method and apparatus for forming deposited film
A method of forming a deposited film according to the present invention includes: introducing a starting gas into a discharge space in a reaction vessel; and applying electric power to generate...
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7504643 |
Method for cleaning a lithographic apparatus module, a cleaning arrangement and a lithographic apparatus comprising the cleaning arrangement
A cleaning arrangement for a lithographic apparatus module may be provided in a collector. The cleaning arrangement includes a hydrogen radical source configured to provide a hydrogen radical...
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7501024 |
Carbon nanohorn producing device and carbon nanohorn producing method
A plume ( 109 ) is generated by irradiating a side face of a graphite rod ( 101 ) with a laser beam ( 103 ) to vaporize carbon. The vaporized carbon is introduced to a carbon nanohorn recovery...
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7491269 |
Method for catalytic growth of nanotubes or nanofibers comprising a NiSi alloy diffusion barrier
The invention relates to a process for the growth of nanotubes or nanofibers on a substrate comprising at least an upper layer made of a first material, wherein: the formation, on the surface of...
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7482235 |
Semiconductor device and method of manufacturing the same
A semiconductor device with an elevated source/drain structure provided in each predetermined position defined by the oxide film and gate wiring on a semiconductor silicon substrate, where an...
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7481879 |
Diamond single crystal substrate manufacturing method and diamond single crystal substrate
A diamond single crystal substrate manufacturing method for growing by vapor-phase synthesis a single crystal from a diamond single crystal seed substrate, comprising etching away by reactive ion...
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7479443 |
Germanium deposition
A method comprises, in a reaction chamber, depositing a seed layer of germanium over a silicon-containing surface at a first temperature. The seed layer has a thickness between about one monolayer...
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7465499 |
Boron phosphide-based semiconductor device, production method thereof, light-emitting diode and boron phosphide-based semiconductor layer
A boron phosphide-based semiconductor device enhanced in properties includes a substrate ( 11 ) composed of a {111}-Si single crystal having a surface {111} crystal plane and a boron...
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7435297 |
Molten-salt-based growth of group III nitrides
A method for growing Group III nitride materials using a molten halide salt as a solvent to solubilize the Group-III ions and nitride ions that react to form the Group III nitride material. The...
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7427326 |
Minimizing degradation of SiC bipolar semiconductor devices
A method of forming a bipolar device includes forming at least one p-type layer of single crystal silicon carbide and at least one n-type layer of single crystal silicon carbide on a substrate....
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7416606 |
Method of forming a layer of silicon carbide on a silicon wafer
The invention relates to a method of forming a layer of silicon carbide on a silicone wafer. The method includes the following steps: depositing an anti-carburation mask on the wafer using an...
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7393412 |
Method for manufacturing compound semiconductor epitaxial substrate
A method for manufacturing a compound semiconductor epitaxial substrate with few concave defects is provided. The method for manufacturing a compound semiconductor epitaxial substrate comprises a...
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7384481 |
Method of forming a rare-earth dielectric layer
Methods for forming compositions comprising a single-phase rare-earth dielectric disposed on a substrate are disclosed. In some embodiments, the method forms a semiconductor-on-insulator structure....
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7384477 |
Method for producing a single crystal and a single crystal
The present invention is a method for producing a single crystal with pulling the single crystal from a raw material melt in a chamber by CZ method, wherein when growing the single crystal, where a...
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7377978 |
Method for producing silicon epitaxial wafer and silicon epitaxial wafer
It is to provide a method for producing a silicon epitaxial wafer, which can prevent fine unevenness from occurring on a rear main surface of a silicon epitaxial wafer and which suppresses the haze...
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7374617 |
Atomic layer deposition methods and chemical vapor deposition methods
The invention includes atomic layer deposition methods and chemical vapor deposition methods. In a particular aspect of the invention, a source of microwave radiation is provided proximate a...
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7371281 |
Silicon carbide single crystal and method and apparatus for producing the same
A growth crucible ( 2 ) for depositing on a seed crystal substrate ( 5 ) a silicon carbide single crystal ( 6 ) using a sublimate gas of a silicon carbide raw material ( 11 ) is disposed inside of...
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7361220 |
Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method
The present invention provides a method of manufacturing a gallium nitride single crystal that can suppress the decomposition of gallium nitride and improve production efficiency in a sublimation...
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7309394 |
Ultraviolet light-emitting device in which p-type semiconductor is used
An object is to provide an ultraviolet light-emitting device in which a p-type semiconductor which has high conductivity and an emission peak in ultraviolet region, and emits light efficiently is...
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7303632 |
Vapor assisted growth of gallium nitride
A vapor transport growth process for bulk growth of high quality gallium nitride for semiconductor applications is disclosed. The method includes the steps of heating a gallium nitride source...
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7294360 |
Conformal coatings for micro-optical elements, and method for making the same
A micro-optical element is produced through vapor deposition techniques, such as atomic layer deposition. An optical structure having a surface with uneven structures is exposed to one or more...
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7279041 |
Atomic layer deposition methods and atomic layer deposition tools
An atomic layer deposition method includes positioning a plurality of semiconductor wafers into an atomic layer deposition chamber. Deposition precursor is emitted from individual gas inlets...
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7276117 |
Method of forming semi-insulating silicon carbide single crystal
Embodiments related to a method of forming semi-insulating silicon carbide (SiC) single crystal are disclosed in which shallow donor levels originating, at least in part, from residual nitrogen...
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7258742 |
Method of manufacturing potassium niobate single crystal thin film, surface acoustic wave element, frequency filter, frequency oscillator, electronic circuit, and electronic apparatus
A method of manufacturing KNbO 3 single crystal thin film having single-phase high quality and excellent morphology on each of single crystal substrates. A surface acoustic wave element, frequency...
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7255744 |
Low-resistivity n-type semiconductor diamond and method of its manufacture
Concerns lithium-doped diamond: Low-resistivity n-type semiconductor diamond doped with lithium and nitrogen, and a method of manufacturing such diamond are provided. Low-resistivity n-type...
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7250083 |
ALD method and apparatus
A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low...
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7232487 |
Method for making an epitaxial germanium temperature sensor
A method of making a highly sensitive epitaxial germanium low temperature sensor that is superior in the method of production and performance than those currently available. The geometry and...
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7229498 |
Nanostructures produced by phase-separation during growth of (III-V)1-x(IV2)x alloys
Nanostructures ( 18 ) and methods for production thereof by phase separation during metal organic vapor-phase epitaxy (MOVPE). An embodiment of one of the methods may comprise providing a growth...
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7220313 |
Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient
The invention herein relates to controlling the nitrogen content in silicon carbide crystals and in particular relates to reducing the incorporation of nitrogen during sublimation growth of silicon...
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7217322 |
Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer
A method of fabricating an epitaxial silicon-germanium layer for an integrated semiconductor device comprises the step of depositing an arsenic in-situ doped silicon-germanium layer, wherein...
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7211144 |
Pulsed nucleation deposition of tungsten layers
A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing...
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7208044 |
Topotactic anion exchange oxide films and method of producing the same
This invention disclosure describes methods for the fabrication metal oxide films on surfaces by topotactic anion exchange, and laminate structures enabled by the method. A precursor metal-nonmetal...
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7192483 |
Method for diamond coating substrates
The present invention relates to a method for diamond coating of substrates in which the substrate is exposed in a vacuum atmosphere to a reactive gas mixture excited by means of a plasma...
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7169227 |
Method for making free-standing AIGaN wafer, wafer produced thereby, and associated methods and devices using the wafer
A method for making a free-standing, single crystal, aluminum gallium nitride (AlGaN) wafer includes forming a single crystal AlGaN layer directly on a single crystal LiAlO 2 substrate using an...
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7153363 |
Atomic layer deposition
Substrates are charged with a material by introducing the substrates into an evacuated vacuum container and exposing the surface of the substrates to a reactive gas which is adsorbed on the...
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7147715 |
Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen
A method is disclosed for producing semi-insulating silicon carbide crystal with a controlled nitrogen content. The method includes the steps of introducing an ambient gas containing hydrogen into...
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