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7608539 |
ALD method and apparatus
A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low...
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7556688 |
Method for achieving low defect density AlGaN single crystal boules
A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic...
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7553370 |
Crystal growth method for nitride semiconductor and formation method for semiconductor device
Methods of crystal growth for semiconductor materials, such as nitride semiconductors, and methods of manufacturing semiconductor devices are provided. The method of crystal growth includes forming...
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7481880 |
Mask and method for crystallizing amorphous silicon
A method of crystallizing amorphous silicon includes forming an amorphous silicon layer on a substrate, placing a mask over the substrate including the amorphous silicon layer, and applying a laser...
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7473316 |
Method of growing nitrogenous semiconductor crystal materials
What is described here is a process for the initial growth of nitrogenous semiconductor crystal materials in the form A X B Y C Z N V M W wherein A, B, C is an element of group II or III, N is...
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7465353 |
Method for growing epitaxial crystal
It is to provide a method for growing an epitaxial crystal in which the doping conditions are set when an epitaxial crystal having a desired carrier concentration is grown. A method for growing an...
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7438760 |
Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition
Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels...
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7416605 |
Anneal of epitaxial layer in a semiconductor device
An anneal of an epitaxially grown crystalline semiconductor layer comprising a combination of group-IV elements. The layer contains at least one of the group of carbon and tin. The layer of...
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7416604 |
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement...
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7393412 |
Method for manufacturing compound semiconductor epitaxial substrate
A method for manufacturing a compound semiconductor epitaxial substrate with few concave defects is provided. The method for manufacturing a compound semiconductor epitaxial substrate comprises a...
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7374617 |
Atomic layer deposition methods and chemical vapor deposition methods
The invention includes atomic layer deposition methods and chemical vapor deposition methods. In a particular aspect of the invention, a source of microwave radiation is provided proximate a...
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7250083 |
ALD method and apparatus
A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low...
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7229498 |
Nanostructures produced by phase-separation during growth of (III-V)1-x(IV2)x alloys
Nanostructures ( 18 ) and methods for production thereof by phase separation during metal organic vapor-phase epitaxy (MOVPE). An embodiment of one of the methods may comprise providing a growth...
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7217322 |
Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer
A method of fabricating an epitaxial silicon-germanium layer for an integrated semiconductor device comprises the step of depositing an arsenic in-situ doped silicon-germanium layer, wherein...
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7211144 |
Pulsed nucleation deposition of tungsten layers
A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing...
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7153361 |
Production method of opto-electronic device array
An opto-electronic device array is made from a multilayer epitaxial film by the following steps. The multilayer epitaxial film is separated into a plurality of segments. The segments are...
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7150789 |
Atomic layer deposition methods
An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer...
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7141115 |
Method of producing silicon-germanium-on-insulator material using unstrained Ge-containing source layers
A method of fabricating a high-quality relaxed SiGe-on-insulator substrate material is provided in which a prefabricated silicon-on-insulator substrate is first exposed to an unstrained...
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7128787 |
Atomic layer deposition method
An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer...
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7128785 |
Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates
The invention relates to a device and to a method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates. The device comprises a heated reaction...
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7105054 |
Method and apparatus of growing a thin film onto a substrate
A method and an apparatus for growing a thin film onto a substrate by the ALD process. The apparatus comprises a reaction chamber into which the substrate can be disposed; a plurality of inlet...
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7094289 |
Method for manufacturing highly-crystallized oxide powder
A method for manufacturing a highly-crystallized oxide powder, wherein an oxide powder is produced by ejecting a starting material powder containing at least one metal element and/or semimetal...
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7084049 |
Manufacturing method for buried insulating layer-type semiconductor silicon carbide substrate
A manufacturing method for a buried insulating layer-type semiconductor silicon carbide substrate comprises the step of placing an SOI substrate 100 , which has a surface silicon layer 130 of a...
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7083679 |
Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective...
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7077902 |
Atomic layer deposition methods
An aluminum-containing material deposition method includes depositing a first precursor on a substrate in the substantial absence of a second precursor. The first precursor can contain a chelate of...
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7060132 |
Method and apparatus of growing a thin film
A method and apparatus for growing a thin film onto a substrate is disclosed. According to one embodiment, a plurality of substrates, each having a width and a length, are placed in a reaction...
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7041170 |
Method of producing high quality relaxed silicon germanium layers
A method for minimizing particle generation during deposition of a graded Si 1-x Ge x layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and...
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7037372 |
Method of growing a thin film onto a substrate
The present invention relates to the production of thin films. In particular, the invention concerns a method of growing a thin film onto a substrate, in which method the substrate is placed in a...
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7018469 |
Atomic layer deposition methods of forming silicon dioxide comprising layers
A substrate is positioned within a deposition chamber. Trimethylsilane is flowed to the chamber and a first inert gas is flowed to the chamber under conditions effective to chemisorb a first...
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7014710 |
Method of growing single crystal Gallium Nitride on silicon substrate
A method of growing single crystal Gallium Nitride on silicon substrate is disclosed including: removing oxide layer of silicon substrate, growing buffer layer of Silicon Carbon Nitride (SiCN), and...
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RE38937 |
Susceptor for vapor-phase growth apparatus
It was an objective of the present invention to provide a susceptor which can prevent a increasing phenomenon of the dopant concentration of the epitaxial layer at the peripheral portion of the...
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6972050 |
Method for depositing in particular crystalline layers, and device for carrying out the method
The invention relates to a method for depositing especially, crystalline layers onto especially, crystalline substrates, in a process chamber of a CVD reactor. At least one first and one second...
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6962624 |
Method and device for depositing in particular organic layers using organic vapor phase deposition
The invention relates to a method and a device for depositing especially, organic layers. In a heated reactor, a non-gaseous starting material that is stored in a source in the form of a container...
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6942731 |
Method for improving the efficiency of epitaxially produced quantum dot semiconductor components
The invention relates to a method for improving the efficiency of epitaxially grown quantum dot semiconductor components having at least one quantum dot layer. The efficiency of semiconductor...
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6936103 |
Low indium content quantum well structures
A method of suppression of Indium carry-over in the MOCVD growth of thin InGaAsP quantum wells, with low Indium content, on top of thick GaInAsP, with high Indium content. These quantum wells are...
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6932866 |
Method for depositing in particular crystalline layers
The invention relates to a method and a device for depositing especially crystalline layers on especially crystalline substrates in a process chamber of a reactor housing having a water-cooled...
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6923860 |
Oxidation of material for tunnel magneto-resistive sensors
The present invention is a tunneling magnetoresistive (TMR) stack configured to operate in a current-perpendicular-to-plane (CPP) mode, wherein a sense current flows substantially perpendicular to...
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6902620 |
Atomic layer deposition systems and methods
Atomic layer deposition systems and methods are disclosed utilizing a multi-wafer sequential processing chamber. The process gases are sequentially rotated among the wafer stations to deposit a...
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6896730 |
Atomic layer deposition apparatus and methods
An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A fixed volume first precursor gas charge is provided within a gas flow...
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6875272 |
Method for preparing GaN based compound semiconductor crystal
In a method for growing a GaN based compound semiconductor on a front surface of a substrate to obtain the GaN based compound semiconductor crystal in one body, because the gas for reducing and...
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6869481 |
Method and device for regulating the differential pressure in epitaxy reactors
A method and a device for regulating a pressure in an epitaxy reactor, wherein the epitaxy reactor has a wafer handling chamber WHC, a process chamber PC, and a gate valve GV connecting the two...
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6863727 |
Method of depositing transition metal nitride thin films
This invention concerns a method for depositing transition metal nitride thin films by an Atomic Layer Deposition (ALD) type process. According to the method vapor-phase pulse of a source material,...
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6863726 |
Vapor phase growth method of oxide dielectric film
A vapor phase growth method of an oxide dielectric film for forming an oxide dielectric film having a perovskite crystal structure expressed by ABO 3 on a substrate according to the present...
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6849241 |
Device and method for depositing one or more layers on a substrate
The invention relates to a device and method for depositing one or more layers onto at least one substrate placed inside a reaction chamber. The layers are deposited while using a liquid or solid...
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6841003 |
Method for forming carbon nanotubes with intermediate purification steps
Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a purification step is performed on the newly formed...
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6841002 |
Method for forming carbon nanotubes with post-treatment step
Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a post-treatment step is performed on the newly formed...
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6828218 |
Method of forming a thin film using atomic layer deposition
The present invention provides a method of forming a thin film using atomic layer deposition (ALD). An ALD reactor having a single reaction space is provided. A batch of substrates is concurrently...
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6821340 |
Method of manufacturing silicon carbide, silicon carbide, composite material, and semiconductor element
To provide a method of manufacturing silicon carbide by forming silicon carbide on a substrate surface from an atmosphere containing a silicon carbide feedstock gas comprising at least a silicon...
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6810897 |
Process gas supply mechanism for ALCVD systems
To provide a process gas supply mechanism for ALCVD systems that enables the high speed switching of process gases without accompanying particulate contamination of the treatment substrate. The...
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6780241 |
Monolithic optical device manufacturing and integration methods
The present invention provides methods of manufacturing and integrating optical devices. In one embodiment, a method of integrating an optical device may include forming a first device over a...
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