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7393411 β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method  
A method for growing a β-Ga 2 O 3 single crystal hardly cracking and having a weakened twinning tendency and an improved crystallinity, a method for growing a thin-film single crystal with high...
7390581 Vicinal gallium nitride substrate for high quality homoepitaxy  
A III-V nitride, e.g., GaN, substrate including a (0001) surface offcut from the <0001> direction predominantly toward a direction selected from the group consisting of <10-10> and...
7384481 Method of forming a rare-earth dielectric layer  
Methods for forming compositions comprising a single-phase rare-earth dielectric disposed on a substrate are disclosed. In some embodiments, the method forms a semiconductor-on-insulator structure....
7381267 Heteroatomic single-crystal layers  
A method for forming, by epitaxy, a heteroatomic single-crystal semiconductor layer on a single-crystal semiconductor wafer, the crystal lattices of the layer and of the wafer being different,...
7368014 Variable temperature deposition methods  
A deposition method may include, at a first temperature, contacting a substrate with a first precursor and chemisorbing a first layer at least one monolayer thick over the substrate. At a second...
7357837 GaN single crystal substrate and method of making the same  
The method of making a GaN single crystal substrate comprises a mask layer forming step of forming on a GaAs substrate 2 a mask layer 8 having a plurality of opening windows 10 disposed...
7354477 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate  
A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a...
7341883 Silicon germanium semiconductive alloy and method of fabricating same  
A silicon germanium (SiGe) semiconductive alloy is grown on a substrate of single crystalline Al 2 O 3 . A {111} crystal plane of a cubic diamond structure SiGe is grown on the substrate's {0001}...
7320732 Method for preparing atomistically straight boundary junctions in high temperature superconducting oxides  
A method for preparing film oxides deposited on a substrate with a resulting grain boundary junction that is atomistically straight. A bicrystal substrate having a straight grain boundary is...
7303632 Vapor assisted growth of gallium nitride  
A vapor transport growth process for bulk growth of high quality gallium nitride for semiconductor applications is disclosed. The method includes the steps of heating a gallium nitride source...
7303630 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate  
Dotted seeds are implanted in a regular pattern upon an undersubstrate. A GaN crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above...
7288153 Method of fabricating orientation film for crystal display device  
A method of fabricating an orientation film for a liquid crystal display device is provided. The orientation film is formed on a substrate. An ion-beam irradiation apparatus having an ion generator...
7279041 Atomic layer deposition methods and atomic layer deposition tools  
An atomic layer deposition method includes positioning a plurality of semiconductor wafers into an atomic layer deposition chamber. Deposition precursor is emitted from individual gas inlets...
7270708 Susceptor, vapor phase growth apparatus, epitaxial wafer manufacturing apparatus, epitaxial wafer manufacturing method, and epitaxial wafer  
A susceptor ( 10 ) supporting a semiconductor substrate (W) in a vapor phase growth, wherein a pocket ( 11 ) is formed on an upper surface of the susceptor to arrange the semiconductor substrate...
7258743 Composite structure with a uniform crystal orientation and the method of controlling the crystal orientation of one such structure  
This invention relates to a process for controlling the orientation of secondary structures (A 1 , A 2 ) with at least a crystalline part during the transfer of secondary structures from a primary...
7217323 Equipment and method for manufacturing silicon carbide single crystal  
A method for manufacturing a silicon carbide single crystal includes the steps of: setting a substrate as a seed crystal in a reactive chamber; introducing a raw material gas into the reactive...
7217322 Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer  
A method of fabricating an epitaxial silicon-germanium layer for an integrated semiconductor device comprises the step of depositing an arsenic in-situ doped silicon-germanium layer, wherein...
7211144 Pulsed nucleation deposition of tungsten layers  
A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing...
7208044 Topotactic anion exchange oxide films and method of producing the same  
This invention disclosure describes methods for the fabrication metal oxide films on surfaces by topotactic anion exchange, and laminate structures enabled by the method. A precursor metal-nonmetal...
7198671 Layered substrates for epitaxial processing, and device  
A substrate comprising at least two layers which have different thermal expansion coefficients (TECs) is used for subsequent epitaxial growth of semiconductors. A typical example is an epitaxial...
7175709 Epitaxy layer and method of forming the same  
A method of forming an epitaxial layer of uniform thickness is provided to improve surface flatness. A substrate is first provided and a Si base layer is then formed on the substrate by epitaxy. A...
7169227 Method for making free-standing AIGaN wafer, wafer produced thereby, and associated methods and devices using the wafer  
A method for making a free-standing, single crystal, aluminum gallium nitride (AlGaN) wafer includes forming a single crystal AlGaN layer directly on a single crystal LiAlO 2 substrate using an...
7161148 Tip structures, devices on their basis, and methods for their preparation  
New designs of electron devices such as scanning probes and field emitters based on tip structures are proposed. The tips are prepared from whiskers that are grown from the vapor phase by the...
7135074 Method for manufacturing silicon carbide single crystal from dislocation control seed crystal  
A method for manufacturing a silicon carbide single crystal includes the steps of: preparing a seed crystal with a screw dislocation generation region; and growing the single crystal on a growth...
7128889 Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries  
An ultrananocrystalline diamond (UNCD) having an average grain size between 3 and 5 nanometers (nm) with not more than about 8% by volume diamond having an average grain size larger than 10 nm. A...
7128785 Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates  
The invention relates to a device and to a method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates. The device comprises a heated reaction...
7118813 Vicinal gallium nitride substrate for high quality homoepitaxy  
A III–V nitride, e.g., GaN, substrate including a (0001) surface offcut from the <0001> direction predominantly toward a direction selected from the group consisting of <10-10> and...
7083679 Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device  
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective...
7063742 N-type semiconductor diamond and its fabrication method  
A substrate is polished and made an inclined substrate, which is exposed to a hydrogen plasma and is thereby smoothened. The substrate is then heated controlledly until it surface temperature...
7037372 Method of growing a thin film onto a substrate  
The present invention relates to the production of thin films. In particular, the invention concerns a method of growing a thin film onto a substrate, in which method the substrate is placed in a...
7033858 Method for making Group III nitride devices and devices produced thereby  
A method is for making at least one semiconductor device including providing a sacrificial growth substrate of Lithium Aluminate (LiAlO 2 ); forming at least one semiconductor layer including a...
7033438 Growth of a single-crystal region of a III-V compound on a single-crystal silicon substrate  
A method for growing a single-crystal region of a III-V compound on a surface corresponding to a crystallographic plane of a single-crystal silicon substrate, including the steps of growing by...
6994750 Film evaluating method, temperature measuring method, and semiconductor device manufacturing method  
Reference infrared-absorption spectrum patterns are prepared in advance as a database. The infrared-absorption spectrum pattern of a film targeted for measurement is measured using FT-IR...
6958093 Free-standing (Al, Ga, In)N and parting method for forming same  
A method of forming a free-standing (Al, Ga, In)N article, by the steps including: providing an expitaxially compatible sacrificial template; depositing single crystal (Al, Ga, In)N material on the...
6942731 Method for improving the efficiency of epitaxially produced quantum dot semiconductor components  
The invention relates to a method for improving the efficiency of epitaxially grown quantum dot semiconductor components having at least one quantum dot layer. The efficiency of semiconductor...
6940103 Nitride semiconductor growth method, nitride semiconductor substrate and nitride semiconductor device  
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective...
6936102 SiC material, semiconductor processing equipment and method of preparing SiC material therefor  
A highly corrosion-resistant SiC material is formed on a base body by a CVD process. The SiC material contains β-SiC crystals so oriented that the ratio of the sum of peak intensities of x-ray...
6932867 Method for growing thin oxide films  
A method is provided for growing thin oxide films on the surface of a substrate by alternatively reacting the surface of the substrate with a metal source material and an oxygen source material....
6932866 Method for depositing in particular crystalline layers  
The invention relates to a method and a device for depositing especially crystalline layers on especially crystalline substrates in a process chamber of a reactor housing having a water-cooled...
6916374 Atomic layer deposition methods and atomic layer deposition tools  
An atomic layer deposition method includes positioning a plurality of semiconductor wafers into an atomic layer deposition chamber. Deposition precursor is emitted from individual gas inlets...
6916373 Semiconductor manufacturing method  
A method for manufacturing a semiconductor using a wafer carrier, wherein the temperature of a wafer can be made uniform with few differences in surface composition distribution. A plurality of...
6893503 Method of manufacturing a semiconductor device  
A method of producing a semiconductor device which removes catalyst elements from a silicon-containing semiconductor film while maintaining the advantage of low temperature process is provided. The...
6881263 Method of growing a thin film onto a substrate  
The present invention relates to the production of thin films. In particular, the invention concerns a method of growing a thin film onto a substrate, in which method the substrate is placed in a...
6881260 Process for direct deposition of ALD RhO2  
The present invention provides methods of performing atomic layer deposition to form conductive, oxidation-resistant rhodium oxide films and films comprising metals, such as platinum, alloyed with...
6875271 Simultaneous cyclical deposition in different processing regions  
A method for simultaneous deposition of multiple compounds on a substrate is provided. In one aspect, a gas stream is introduced into a processing chamber and flows across a substrate surface...
6869480 Method for the production of nanometer scale step height reference specimens  
Methods are disclosed that provide for structures and techniques for the fabrication of ordered arrangements of crystallographically determined nanometer scale steps on single crystal substrates,...
6844074 Crystal thin film and production method therefor  
A single crystal of quartz thin film and a production method therefor are provided. A method for producing a quartz epitaxial thin film comprises the steps of vaporizing a silicon alkoxide as a...
6811612 Patterning of nanocrystalline diamond films for diamond microstructures useful in MEMS and other devices  
MEMS structure and a method of fabricating them from ultrananocrystalline diamond films having average grain sizes of less than about 10 nm and feature resolution of less than about one micron ....
6805744 Method of producing device quality (Al)InGaP alloys on lattice-mismatched substrates  
A method of forming a semiconductor structure including providing a single crystal semiconductor substrate of GaP, and fabricating a graded composition buffer including a plurality of epitaxial...
6800135 ZnO/sapphire substrate and method for manufacturing the same  
A ZnO/sapphire substrate includes an R-plane sapphire substrate whose (0 1-1 2) planes are parallel to the surface thereof and a ZnO epitaxial film formed on the R-plane sapphire substrate. The (1...
Matches 1 - 50 out of 314 1 2 3 4 5 6 7 >