Matches 201 - 250 out of 314 < 1 2 3 4 5 6 7 >
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4664743 Growth of semi-conductors and apparatus for use therein  
A method for the growth of a semi-conductor material on a substrate by vapour phase epitaxy, comprises establishing a gas flow in each of a plurality of ducts, and moving the substrate, in a single...
4661176 Process for improving the quality of epitaxial silicon films grown on insulating substrates utilizing oxygen ion conductor substrates  
The present invention accomplishes the thermal oxidation of the silicon side of the interface present in epitaxial silicon films grown on yttria-stabilized cubic zirconia, <Si>/<YSZ>,...
4623426 Low temperature process for depositing epitaxial layers  
The specification discloses a low temperature process for depositing an epitaxial layer of a selected oxide or a selected sulfide material on a chosen substrate. The substrate is exposed to a...
4557794 Method for forming a void-free monocrystalline epitaxial layer on a mask  
A method for forming a layer of monocrystalline diamond cubic material on a mask comprises initially providing a substrate having a monocrystalline surface which is parallel to a {100}-type...
4548658 Growth of lattice-graded epilayers  
A method is disclosed for growing an epitaxial layer composed of semiconductor material belonging to the cubic crystal system on a substrate, where the lattice constant of the epitaxial layer is...
4533410 Process of vapor phase epitaxy of compound semiconductors  
A layer of a compound semiconductor having good quality is formed by disposing a substrate in an epitaxial growth layer, feeding a second reactant gas through a guide member extending from the...
4512825 Recovery of fragile layers produced on substrates by chemical vapor deposition  
A method of recovering intact at room temperature a layer of a first material, such as silicon carbide, produced by depositing it from the gas phase at a deposition temperature above room...
4510177 Method and apparatus for vapor phase deposition  
A plurality of wafers on which semiconductor films having a uniform thickness and specific resistivity are obtained by a horizontal type low pressure vapor phase deposition system, i.e., a system...
4482422 Method for growing a low defect monocrystalline layer on a mask  
An apertured mask layer is disposed on a substrate having a monocrystalline portion at a surface thereof. Essentially all edges of the mask apertures are parallel to a predetermined...
4447497 CVD Process for producing monocrystalline silicon-on-cubic zirconia and article produced thereby  
A method for producing monocrystalline semiconductor-on-insulator structures and article produced thereby, by the steps of heat treating a polished substrate of cubic zirconia to approximately...
4445965 Method for making thin film cadmium telluride and related semiconductors for solar cells  
A thin cadmium-telluride semiconductor film for use in solar cells is grown epitaxially on a second semiconductor film, typically tellurium, which may be epitaxial on a substrate semiconductor,...
4444812 Combination gas curtains for continuous chemical vapor deposition production of silicon bodies  
A process for producing electronic-grade silicon bodies is disclosed wherein continuously-pulled slim rods which can be formed in situ from the reaction of a seed crystal and a molten silicon...
4431475 Process for making doped semiconductors  
A process for making doped semiconductor bodies in thick sheets by epitaxial growth of a doped monocrystalline semiconductor layer on a substrate body by means of a transfer reaction, the transfer...
4422888 Method for successfully depositing doped II-VI epitaxial layers by organometallic chemical vapor deposition  
A low-pressure, low-temperature organometallic chemical vapor deposition (OM-CVD) method for depositing a doped epitaxial layer of a II-VI compound, such as, n-ZnSe, on a substrate in the...
4421786 Chemical vapor deposition reactor for silicon epitaxial processes  
A chemical vapor deposition reactor (40) is disclosed. The reactor (40) has a vertically mounted tube (43), axially disposed within a chamber (41). A plurality of spaced, planar, wafer holders...
4419178 Continuous ribbon epitaxy  
A process for growing an epitaxial ribbon of mono-crystalline material involves formation of an endless belt of monocrystalline composition. The belt is driven about a closed path to bring portions...
4411729 Method for a vapor phase growth of a compound semiconductor  
In the vapor phase epitaxy (VPE) method employed for growth of a compound semiconductor, a high resistivity GaAs buffer layer and a low resistivity GaAs active layer are successively grown on a...
4389273 Method of manufacturing a semiconductor device  
A method of manufacturing a semiconductor device in which a monocrystalline material is epitaxially grown on a disc-shaped monocrystalline substrate. The substrate is placed in an elongate reactor...
4382837 Epitaxial crystal fabrication of SiC:AlN  
Crystals of silicon carbide and aluminum nitride, substrates containing same, and the fabrication thereof.
4368098 Epitaxial composite and method of making  
An epitaxial composite comprising a thin film of single crystal Group III-V wide band-gap compound semiconductor or semiconductor alloy on single crystal, electrically insulating oxide substrates...
4352713 Vapor growth method  
A vapor growth method of forming deposition film on a plurality of substrates disposed within a cylindrical reaction vessel by causing flow of reaction gas under a reduced pressure through the...
4336099 Method for producing gallium arsenide single crystal ribbons  
The single crystal growth of GaAs is highly anisotropic under certain conditions. A wafer of GaAs is masked and exposed to the vapor only through a long, narrow slot in the <110> direction. A...
4314873 Method for depositing heteroepitaxially InP on GaAs semi-insulating substrates  
A method for depositing high quality indium phosphide layers heteroepitaxly on GaAs substrates by controlling the growth between them of an interfacial quaternary alloy of In y Ga 1 -y As x P 1 -x.
4309240 Process for chemical vapor deposition of films on silicon wafers  
A process for depositing films of uniform thickness on silicon wafers at a uniform deposition rate among all wafers processed at the same time. The wafers are vertically oriented and arranged in a...
4293370 Method for the epitaxial growth of boron phosphorous semiconductors  
The epitaxial growth of boron-phosphorous semiconductors can be accomplished by chemically reacting the gas materials diborane and phosphorous trichloride. The preferable temperature of the...
4279669 Method for epitaxial deposition  
A method of epitaxial deposition comprises arranging semi-conductor discs and source material in two spaced planes in a reaction vessel, controlling the temperatures of the source material and the...
4263087 Process for producing epitaxial layers  
Epitaxial layers are formed by introducing a reaction gas mixture into a reaction vessel in which semiconductor substrates are located, under a pressure of not higher than 1333 Pa (10 Torr), and...
4235662 Layer of crystalline silicon having (111) orientation on (111) surface of lithium aluminum  
Low strain heteroepitaxy of (111) silicon on (111) lithium aluminum between the reconstructed 7×7 surface of (111) silicon and a 6×6 array of aluminum atoms on the surface of the (111) lithium...
4232063 Chemical vapor deposition reactor and process  
Apparatus and process for depositing materials such as Si 3 N 4 and SiO 2 on semiconductor wafers in a hot-wall reactor. A perforated distribution tube is positioned in the reaction chamber, and...
4214926 Method of doping IIb or VIb group elements into a boron phosphide semiconductor  
A method of doping IIb or VIb group elements into a phosphide semiconductor comprising the steps of adding organic compounds of IIb group elements or hydrides of VIb group elements to a gas...
4204893 Process for depositing chrome doped epitaxial layers of gallium arsenide utilizing a preliminary formed chemical vapor-deposited chromium oxide dopant source  
A method for reliably producing epitaxial layers of chrome doped gallium arsenide having excellent physical and electrical characteristics is disclosed. The process relies on the use of a specific...
4179326 Process for the vapor growth of a thin film  
Disclosed herewith is an improvement of the conventional process for the vapor growth of a thin film, such as the films of SiO 2 , Si 3 N 4 , Al 2 O 3 and polycrystalline Si, on a plurality of...
4177321 Single crystal of semiconductive material on crystal of insulating material  
A grown crystal structure comprises a single crystal of semiconductive material having a given lattice constant grown on a spinel crystal substrate having a different lattice constant. A substance...
4171235 Process for fabricating heterojunction structures utilizing a double chamber vacuum deposition system  
The specification describes a gallium aluminum arsenide-gallium arsenide-germanium solar cell and fabrication process therefor wherein the deposition of a layer of gallium aluminum arsenide...
4168998 Process for manufacturing a vapor phase epitaxial wafer of compound semiconductor without causing breaking of wafer by utilizing a pre-coating of carbonaceous powder  
Semiconductor epitaxial wafers consisting of an epitaxial film and its substrate can be removed, in accordance with the present invention, from a substrate supporting component, without breaking...
4147584 Method for providing low cost wafers for use as substrates for integrated circuits  
The method of manufacture of the present invention provides a wafer that is better than a bulk monocrystalline silicon wafer and equivalent to silicon on sapphire (SOS) wafers for use as substrates...
4120706 Heteroepitaxial deposition of gap on silicon substrates  
A crack free layer of GaP is epitaxially deposited on a silicon phosphide surface of a silicon substrate having an (III) orientation. The silicon substrate is prebaked on a carbide coated susceptor...
4108106 Cross-flow reactor  
A cross-flow reactor for single pass reaction of a plurality of semiconductor wafers with process gas at spaced locations within a heated reactor chamber. The process gas flows along a heated...
4066482 Selective epitaxial growth technique for fabricating waveguides for integrated optics  
This disclosure concerns optical waveguides of semiconductor material through which light is adapted to be propagated. The optical waveguides comprise respective first and second layers of...
4050964 Growing smooth epitaxial layers on misoriented substrates  
A process for improving the smoothness of semiconductor layers grown by epitaxy is described. Smooth epitaxial layers, free of crystal terraces, are attained by misorienting the growth surface of...
4042447 Crystallizing a layer of silicon on a sodium thallium type crystalline alloy substrate  
Relates to a method for producing a product comprising crystalline silicon on a sodium thallium type substrate by application of silicon atoms gradually to that substrate whereby oriented...
4000019 Method of retaining substrate profiles during epitaxial deposition  
A method of manufacturing a semiconductor device, in particular a monolithic integrated circuit, in which highly doped zones are provided according to a given pattern on one side of a...
T951008 Title is not available  
3956032 Process for fabricating SiC semiconductor devices  
Sections are cut from a SiC platelet such that the sections have a-faces parallel to the c-axis of the SiC platelet. The sections serve as substrates for the growth of SiC layers by attaching the...
3945864 Method of growing thick expitaxial layers of silicon  
Epitaxial layers of silicon, having thicknesses of at least about 25 μm, are grown on the (100) or (111) planar surfaces of silicon substrates by the vapor deposition of silicon from the reaction...
3922467 Vapour-phase deposition method  
A method of forming a deposit from a gas mixture on a large number of flat substrates in a tubular space. The substrates are arranged along the gas flow with increasing spaces between substrates...
3888705 Vapor phase growth of groups III-V compounds by hydrogen chloride transport of the elements  
A method of forming binary, ternary, and quaternary compounds derived from elements of Groups III-V wherein a hydrogen chloride-hydrogen carrier gas is separately contacted with the desired...
3808674 EPITAXIAL GROWTH OF THERMICALLY EXPANDABLE FILMS AND PARTICULARLY ANISOTROPIC FERRO-ELECTRIC FILMS  
A coherent, preferably thick film is epitaxially grown on a substrate with a different coefficient of expansion from the film by straining the substrate by bending, epitaxially growing the film on...
3753775 CHEMICAL POLISHING OF SAPPHIRE  
The [1102] crystallographic oriented surface of a sapphire body is chemically polished by heating the body to a temperature of between 1,000°C and 1,200°C and contacting the surface of the body...
3661676 PRODUCTION OF SINGLE CRYSTAL ALUMINUM OXIDE  
A method for the production of large single-crystals of Al 2 O 3 prising the positioning of several small single-crystals of Al 2 O 3 on a substrate in a chamber, the catalytic oxidation of...
Matches 201 - 250 out of 314 < 1 2 3 4 5 6 7 >