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7332735 |
Phase change memory cell and method of formation
A phase change memory element and methods for forming the same are provided. The memory element includes a first electrode and a chalcogenide comprising phase change material layer over the first...
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7332703 |
Imaging structure including a pixel with multiple signal readout circuits and methods of operation for imaging structure
A pixel cell allows both correlated double sampling (CDS) and automatic light control (ALC) operations through a non-destructive, parallel readout. An image sensor may include an array of pixel...
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7332442 |
Systems and methods for forming metal oxide layers
A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor...
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7332419 |
Structure and method of fabricating a transistor having a trench gate
An integrated circuit transistor is fabricated with a trench gate having nonconductive sidewalls. The transistor is surrounded by an isolation trench filled with a nonconductive material. The...
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7332418 |
High-density single transistor vertical memory gain cell
A memory cell which is formed on a substrate of a first conductivity type. A pillar of the first conductivity type extends vertically upward from the substrate. A source region of a second...
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7332413 |
Semiconductor wafers including one or more reinforcement structures and methods of forming the same
Methods of forming semiconductor devices include thinning a region of a semiconductor wafer and forming at least one semiconductor die laterally within a thinned region of the wafer. One or more...
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7332408 |
Isolation trenches for memory devices
Methods and apparatus are provided. A first dielectric plug is formed in a portion of a trench that extends into a substrate of a memory device so that an upper surface of the first dielectric plug...
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7332401 |
Method of fabricating an electrode structure for use in an integrated circuit
An electrode structure includes a first layer of conductive material and a dielectric layer formed on a surface of the first layer. An opening is formed in the dielectric layer to expose a portion...
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7332389 |
Selective polysilicon stud growth
A memory cell having a bit line contact is provided. The memory cell may be a 6F 2 memory cell. The bit line contact may have a contact hole bounded by insulating sidewalls, and the contact hole...
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7332388 |
Method to simultaneously form both fully silicided and partially silicided dual work function transistor gates during the manufacture of a semiconductor device, semiconductor devices, and systems including same
A method for forming transistor gates having two different work functions comprises forming a first polysilicon layer which may be doped with n-type dopants. The first polysilicon layer comprises...
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7332376 |
Method of encapsulating packaged microelectronic devices with a barrier
Methods and apparatuses for encapsulating a microelectronic die or other components in the fabrication of packaged microelectronic devices. In one aspect of the invention, a packaged...
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7332372 |
Methods for forming assemblies and packages that include stacked semiconductor devices separated a distance defined by adhesive material interposed therebetween
A method for assembling semiconductor devices includes providing a first semiconductor device, applying a volume of adhesive material to at least a surface of the first semiconductor device, and...
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7332032 |
Precursor mixtures for use in preparing layers on substrates
Methods of forming a layer on a substrate using complexes of Formula I. The complexes and methods are particularly suitable for the preparation of semiconductor structures. The complexes are of the...
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RE40061 |
Multi-chip stacked devices
A multiple stacked die device is disclosed that contains up to four dies and does not exceed the height of current single die packages. Close-tolerance stacking is made possible by a...
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7330992 |
System and method for read synchronization of memory modules
A memory module includes several memory devices coupled to a memory hub. The memory hub includes several link interfaces coupled to respective processors, several memory controller coupled to...
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7330929 |
CAM modified to be used for statistic calculation in network switches and routers
A content addressable memory (CAM) device includes a plurality of entries each having an associated counter. When a CAM entry matches a search word stored in the comparand register of the CAM...
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7330869 |
Hybrid arithmetic logic unit
Methods and apparatus for improving the efficiency of an arithmetic logic unit (ALU) are provided. The ALU of the invention combines the operation of a single-cycle ALU with the processing speed of...
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7330393 |
Memory array decoder
An apparatus and method for selecting a storage location in a memory device including receiving at least one of a pre-decoded location address signal, a match signal, and a redundant location...
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7330390 |
Noise resistant small signal sensing circuit for a memory device
Apparatus and method for data sensing circuitry that uses averaging to sense small differences in signal levels representing data states. The apparatus periodically switches the coupling of input...
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7330382 |
Programmable DQS preamble
A method and apparatus for programming a data strobe (DQS) preamble in a memory by loading a defined set of bits into one or more registers of the memory, where one or more bits are formatted...
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7330367 |
Stacked 1T-nMTJ MRAM structure
This invention relates to MRAM technology and new variations on MRAM array architecture to incorporate certain advantages from both cross-point and 1T-1MTJ architectures. The fast read-time and...
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7330211 |
Camera module with focus adjustment structure and systems and methods of making the same
Camera modules with focus adjustment structures and systems and methods of making the same are described. In one aspect, a sensor housing having an image sensor, a lens holder comprising a lens,...
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7330146 |
Minimized SAR-type column-wide ADC for image sensors
An improved analog-to-digital converter wherein a minimal amount of circuitry is provided for conversion of an analog signal to a series of digital bits. A comparator is provided for generating...
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7330036 |
Engagement Probes
An engagement probe for engaging electrically conductive test pads on a semiconductor substrate having integrated circuitry for operability testing thereof includes an outer surface comprising a...
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7329949 |
Packaged microelectronic devices and methods for packaging microelectronic devices
Packaged microelectronic devices and methods for packaging microelectronic devices are disclosed herein. In one embodiment, a method of packaging a microelectronic device including a...
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7329945 |
Flip-chip adaptor package for bare die
A board for connecting a bare semiconductor die with a bond pad arrangement which does not conform to a master printed circuit board with a specific or standardized pin out, connector pad, or lead...
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7329943 |
Microelectronic devices and methods for forming interconnects in microelectronic devices
Microelectronic devices, methods for packaging microelectronic devices, and methods for forming interconnects in microelectronic devices are disclosed herein. In one embodiment, a method comprises...
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7329924 |
Integrated circuits and methods of forming a field effect transistor
Integrated circuits and methods of forming field effect transistors are disclosed. In one aspect, an integrated circuit includes a semiconductor substrate comprising bulk semiconductive material....
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7329920 |
Trench corner effect bidirectional flash memory cell
A non-volatile memory cell structure that is capable of holding two data bits. The structure includes a trench in a substrate with two sides of the trench being lined with a trapping material. The...
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7329917 |
Permeable capacitor electrode
The present teachings describe a container capacitor that utilizes an etchant permeable lower electrode for the formation of single or double-sided capacitors without excessive etching back of the...
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7329910 |
Semiconductor substrates and field effect transistor constructions
The invention includes methods of forming field effect transistor gates. In one implementation, a series of layers is formed proximate a semiconductive material channel region. The layers comprise...
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7329899 |
Wafer-level redistribution circuit
A semiconductor component configured for wafer-level testing includes a semiconductor die having at least one die contact electrically exposed for coupling with a redistribution circuit that...
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7329861 |
Integrally packaged imaging module
An integrally packaged imaging module includes an integrated circuit (IC), including an image sensing device formed on a semiconductor substrate, and wafer level packaging enclosing the IC. The...
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7329856 |
Image sensor having integrated infrared-filtering optical device and related method
An image sensing device is disclosed having a die formed with an array of photosensing sites and a structure of optical material having infrared absorbing characteristics formed over the...
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7329618 |
Ion implanting methods
An ion implanting method includes forming a pair of spaced and adjacent features projecting outwardly from a substrate. At least outermost portions of the pair of spaced features are laterally...
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7329615 |
Atomic layer deposition method of forming an oxide comprising layer on a substrate
This invention includes atomic layer deposition methods of depositing oxide comprising layers on substrates. In one implementation, a substrate is positioned within a deposition chamber. A first...
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7329607 |
Conductive connection forming methods, oxidation reducing methods, and integrated circuits formed thereby
A conductive connection forming method includes forming a first layer comprising a first metal on a substrate and forming a second layer comprising a second metal different from the first metal on...
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7329576 |
Double-sided container capacitors using a sacrificial layer
Double-sided container capacitors are formed using sacrificial layers. A sacrificial layer is formed within a recess in a structural layer. A lower electrode is formed within the recess. The...
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7329573 |
Methods of forming capacitors
A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The...
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7329558 |
Differential negative resistance memory
The invention relates to a DNR (differential negative resistance) exhibiting device that can be programmed to store information as readable current amplitudes and to methods of making such a...
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7329552 |
Field effect transistor fabrication methods, field emission device fabrication methods, and field emission device operational methods
The present invention includes field effect transistors, field emission apparatuses, thin film transistors, and methods of forming field effect transistors. According to one embodiment, a field...
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7329292 |
Process byproduct trap and system including same
A trap device including at least one substance delivery element for introducing a substance therein is disclosed. The delivered substance may influence the nature of deposits that have formed...
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7329168 |
Extended Kalman filter incorporating offline metrology
An algorithm uses offline metrology to control a process by passing information from an outer control loop to an inner control loop, extended Kalman filter estimator. The inner control loop...
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7328517 |
Method and apparatus for measurement of thickness and warpage of substrates
An apparatus comprises one or more pairs of mutually coaxial and opposing linear measuring devices including movable, biased fingers for simultaneously determining the thickness and warpage of a...
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7328381 |
Testing system and method for memory modules having a memory hub architecture
A testing method and system is used to test memory modules each of which has a memory hub coupled to a plurality of memory devices. The testing system and method includes a test interface circuit...
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7328379 |
Look-up table for use with redundant memory
A redundancy scheme for a memory is disclosed that is programmable both before and after the memory device is packaged and/or installed in a system. This is preferably accomplished by using...
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7327629 |
Circuit and method for reading an antifuse
An antifuse circuit and antifuse reading method for determining whether an antifuse is programmed or un-programmed. An antifuse circuit includes a sensing circuit having a sense node coupled to the...
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7327628 |
Circuit and method for reading an antifuse
An antifuse circuit and antifuse reading method for determining whether an antifuse is programmed or un-programmed. An antifuse circuit includes a sensing circuit having a sense node coupled to the...
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7327618 |
Semiconductor memory with wordline timing
A semiconductor memory with wordline timing, which links activating a wordline to an isolation signal. The isolation signal is applied to a memory section adjacent the memory section containing the...
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7327592 |
Self-identifying stacked die semiconductor components
A semiconductor die having a functional circuit (e.g., a memory array) and a decode circuit suitable for use in a stacked die semiconductor component (e.g., a random access memory component) is...
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