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US20110086518 |
POST CHROMIUM ALLOY PLASMA ETCH ASHING PROCESS
A method for ashing hardened resist from a photoresist patterned chromium alloy post etch using a plasma ashing chemistry which contains no gaseous source of hydrogen and contains a gaseous source...
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US20060021570 |
Reduction in size of hemispherical grains of hemispherical grained film
A hemispherical grained (HSG) film is oxidized to form an oxidized layer at the surface part of the HSG film, and then the oxidized layer is etched to be removed. The size of the hemispherical...
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US20110248386 |
METHOD OF FORMATION OF COHERENT WAVY NANOSTRUCTURES (VARIANTS)
The method for forming wavelike coherent nanostructures by irradiating a surface of a material by a homogeneous flow of ions is disclosed. The rate of coherency is increased by applying preliminary...
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US20110129988 |
METHOD OF MAKING MULTIPLE IMPLANTATIONS IN A SUBSTRATE
A method of implanting atoms and/or ions into a substrate, including: a) a first implantation of ions or atoms at a first depth in the substrate, to form a first implantation plane, b) at least one...
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US20070293012 |
REDUCTION OF SLIP AND PLASTIC DEFORMATIONS DURING ANNEALING BY THE USE OF ULTRA-FAST THERMAL SPIKES
Exemplary embodiments provide methods for reducing and/or removing slip and plastic deformations in semiconductor materials by use of one or more ultra-fast thermal spike anneals. The ultra-fast...
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US20070293057 |
Method of direct coulomb explosion in laser ablation of semiconductor structures
A new technique and Method of Direct Coulomb Explosion in Laser Ablation of Semiconductor Structures in semiconductor materials is disclosed. The Method of Direct Coulomb Explosion in Laser...
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US20120083136 |
METHOD AND SYSTEM FOR MODIFYING PATTERNED PHOTORESIST USING MULTI-STEP ION IMPLANTATION
A method of reducing the roughness profile in a plurality of patterned resist features. Each patterned resist feature includes a first sidewall and a second sidewall opposite the first sidewall,...
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US20100055882 |
Junction Termination Extension with Controllable Doping Profile and Controllable Width for High-Voltage Electronic Devices
Methods for producing a junction termination extension surrounding the edge of a cathode or anode junction in a semiconductor substrate, where the junction termination extension has a controlled...
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US20120058649 |
PLASMA PROCESSING APPARATUS AND METHOD THEREOF
In a plasma torch unit, copper rods forming a coil as a whole are disposed inside copper rod inserting holes formed in a quartz block so that the quartz block is cooled by water flowing inside the...
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US20100159712 |
Method of determining a target mesa configuration of an electrostatic chuck
A method of modifying the heat transfer coefficient profile of an electrostatic chuck by configuring the areal density of a mesa configuration of an insulating layer of the chuck is provided. A...
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US20090011615 |
Advanced Processing Technique and System for Preserving Tungsten in a Device Structure
Removing photoresist from a workpiece is described when a region of tungsten is exposed. A plasma is generated from a gas input consisting essentially of hydrogen gas and oxygen gas in a...
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US20070059942 |
PLASMA CVD PROCESS FOR MANUFACTURING MULTILAYER ANTI-REFLECTION COATINGS
A plasma chemical vapor deposition (CVD) process for the production of a multilayer anti-reflection coating on substrates (especially on substrates with curved or uneven surface) is disclosed. The...
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US20110300711 |
METHOD AND SYSTEM FOR PATTERNING A SUBSTRATE
A method of patterning a substrate comprises providing an array of resist features defined by a first pitch and a first gap width between adjacent resist features. Particles are introduced into the...
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US20060128165 |
Method for patterning surface modification
A method of patterning surface modification by (a) positioning a repositionable aperture mask in proximity to a substrate, and (b) selectively exposing a portion of the substrate to a surface...
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US20080121819 |
Substrate with Marker, Manufacturing Method Thereof, Laser Irradiation Apparatus, Laser Irradiation Method, Light Exposure Apparatus, and Manufacturing Method of Semiconductor Device
To provide a laser irradiation apparatus which performs alignment of an irradiated object and emits a laser beam precisely, a laser irradiation method, and a manufacturing method of a TFT with high...
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US20100159618 |
Assembly of ordered carbon shells on semiconducting nanomaterials
In some embodiments of the invention, encapsulated semiconducting nanomaterials are described. In certain embodiments the nanostructures described are semiconducting nanomaterials encapsulated with...
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US20080214021 |
METHOD OF CRYSTALLIZING SEMICONDUCTOR FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
It is an object of the present invention to align the plane orientations of crystal grains of a semiconductor film crystallized by irradiation with a linear laser beam with a width of less than or...
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US20060019493 |
Methods of metallization for microelectronic devices utilizing metal oxide
A metal oxide is deposited on a substrate in a semiconductor fabrication metallization process is patterned and subsequently reduced to a more conductive form, such as elemental metal. The metal...
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US20060199399 |
Surface manipulation and selective deposition processes using adsorbed halogen atoms
The present invention provides a surface preparation process using adsorbed halogen. The halogen is applied in a gas phase with UV light. The adsorbed halogen is subsequently modified in another...
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US20070049034 |
High aspect ratio gap fill application using high density plasma chemical vapor deposition
A high density plasma chemical vapor deposition process including exciting gas mixture to create a plasma including ions, and directing the plasma into a dense region above the upper surface of the...
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US20110097902 |
METHOD AND APPARATUS OF HALOGEN REMOVAL
A wafer is provided into an entrance load lock chamber. A vacuum is created in the entrance load lock chamber. The wafer is transported to a processing tool. The wafer is processed in a process...
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US20080008222 |
Laser Irradiation Method and Apparatus, Method for Annealing Non-Single Cyrstal, and Method for Manufacturing Semiconductor Device
It is an object of the present invention to provide a laser irradiation technique which can keep the stability of the laser oscillator high and which can perform laser process homogeneously by...
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US20060145303 |
Impurity doped UV protection layer
An ultra-violet (UV) protection layer is formed over a semiconductor workpiece before depositing a UV curable dielectric layer. The UV protection layer prevents UV light from reaching and damaging...
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US20070224840 |
Method of Plasma Processing with In-Situ Monitoring and Process Parameter Tuning
A method of selecting plasma doping process parameters includes determining a recipe parameter database for achieving at least one plasma doping condition. The initial recipe parameters are...
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US20090258507 |
Substrate Treatment Device and Substrate Treatment Method
In order to solve the problem of contamination caused by static electricity on the surface of a substrate after plasma treatment, the invention provides a substrate treatment device comprising a...
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US20100041216 |
METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE
The present invention relates to a method of forming a nitride semiconductor substrate. This method includes steps of providing a substrate and then forming an epitaxy layer on the substrate. A...
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US20070227665 |
PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
A plasma processing method performs a desired plasma process on substrates by using a plasma generated in a processing space. A first and a second electrode are disposed in parallel in a processing...
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US20080248656 |
METHODS FOR STRIPPING PHOTORESIST AND/OR CLEANING METAL REGIONS
Methods are provided for cleaning metal regions overlying semiconductor substrates. A method for removing material from a metal region comprises heating the metal region, forming a plasma from a...
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US20110318919 |
SURFACE TREATMENT FOR A FLUOROCARBON FILM
A method for manufacturing semiconductor devices includes the steps of annealing an insulating layer and forming a barrier layer including a metal element over the insulating layer. The insulating...
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US20070243700 |
Method of photoresist strip for plasma doping process of semiconductor manufacturing
A method of forming an intermediate semiconductor device is disclosed that comprises providing a semiconductor substrate, forming a photoresist layer on the semiconductor substrate, implanting a...
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US20110111533 |
UV AND REDUCING TREATMENT FOR K RECOVERY AND SURFACE CLEAN IN SEMICONDUCTOR PROCESSING
Treatment of carbon-containing low-k dielectric with UV radiation and a reducing agent enables process-induced damage repair. Also, treatment with a reducing agent and UV radiation is effective to...
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US20060281301 |
Method for manufacturing dual damascene pattern
Normal+Times New Roman, Justified, Line spacing: 1.5 lines A method for forming a dual damascene pattern is provided. According to the method, a diffusion barrier layer and an interlayer insulation...
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US20070281497 |
METHOD TO MITIGATE IMPACT OF UV AND E-BEAM EXPOSURE ON SEMICONDUCTOR DEVICE FILM PROPERTIES BY USE OF A BILAYER FILM
Methods are provided for processing a substrate comprising a bilayer barrier film thereon. In one aspect, a method comprises depositing a first barrier layer, depositing a second barrier layer on...
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US20060019501 |
Methods of forming a thin layer including hafnium silicon oxide using atomic layer deposition and methods of forming a gate structure and a capacitor including the same
Methods of forming a thin film include applying a first reactant to a substrate, chemisorbing a first portion of the first reactant and physisorbing a second portion of the first reactant on the...
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US20070066085 |
METHOD OF FABRICATING DIELECTRIC LAYER
A method of fabricating a dielectric layer is described. A twelve-inch wafer having at least three metallic layers thereon is provided. A dielectric layer is formed over the twelve-inch wafer by...
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US20100240199 |
Scalable Light-Induced Metallic to Semiconducting Conversion of Carbon Nanotubes and Applications to Field-Effect Transistor Devices
Among others, techniques are described for forming nanotubes. In one aspect, a method includes forming a base layer of a transition metal on a substrate. The method also includes heating the...
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US20090203190 |
Method of forming a mask stack pattern and method of manufacturing a flash memory device including an active area having rounded corners
A method of forming a mask stack pattern and a method of manufacturing a flash memory device including an active area having rounded corners are provided. The method of manufacture including...
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US20100273277 |
RAPID THERMAL PROCESSING SYSTEMS AND METHODS FOR TREATING MICROELECTRONIC SUBSTRATES
Rapid thermal processing systems and associated methods are disclosed herein. In one embodiment, a method for heating a microelectronic substrate include generating a plasma, applying the generated...
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US20100009550 |
METHOD AND APPARATUS FOR MODIFYING INTEGRATED CIRCUIT BY LASER
[PROBLEMS] To provide a method and an apparatus for cutting a conductive link of a redundant circuit in a semiconductor circuit. [MEANS FOR SOLVING PROBLEMS] A method is provided for selectively...
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US20070190809 |
Wafer processing method, semiconductor device manufacturing method, and wafer processing apparatus
A wafer processing method is provided that includes the steps of heating a silicon wafer containing oxygen and irradiating an infrared ray having a wavelength within a range of 7-25 μm on the ...
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US20060264028 |
Energy beam treatment to improve the hermeticity of a hermetic layer
The present invention provides a process for increasing the hermeticity of a hermetic layer, a method for manufacturing an interconnect structure, and a method for manufacturing an integrated...
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US20060252283 |
Substrate processing apparatus and sustrate processing method
To effectively prevent a micro arc causing damage to an apparatus and a substrate, by detecting a generation of the micro arc. A substrate processing apparatus is constituted so as to generate a...
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US20070155185 |
Electrical sensor for real-time feedback control of plasma nitridation
A device (101) for controlling the treatment of a substrate (102) with a plasma (103) is provided which comprises (a) a plasma chamber (104) adapted to generate a plasma (103); (b) a sensor (113)...
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US20090149034 |
SEMICONDUCTOR MODULE AND METHOD OF MANUFACTURING THE SAME
In a semiconductor module, adhesion between an insulating base material and an insulator provided on the insulating base material, for example a sealing resin of the semiconductor element, is to be...
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US20060124934 |
Thin film transistor, production method and production apparatus therefor
A thin film transistor produced through flattening a gate insulating film acquires the high mobility of a carrier, but has a problem of occasionally showing low resistivity, low withstanding...
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US20100200953 |
ON-CHIP HEATER AND METHODS FOR FABRICATION THEREOF AND USE THEREOF
An on-chip heater and methods for fabrication thereof and use thereof provide that the heater is located within an isolation region that in turn is located within a semiconductor substrate. The...
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US20080268655 |
Method for Manufacturing Semiconductor Device
The present invention is a method of manufacturing a semiconductor device from a layered body including: a semiconductor substrate; a high dielectric film formed on the semiconductor substrate; and...
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US20100221905 |
MATERIAL INFUSION IN A TRAP LAYER STRUCTURE USING GAS CLUSTER ION BEAM PROCESSING
A method of preparing a floating trap type device on a substrate is described. The method comprises forming a trap layer structure on a substrate, and modifying a composition of one or more layers...
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US20090159881 |
SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING THE SAME
The present invention is a method for manufacturing a semiconductor apparatus including a chip which is fabricated in large numbers on a wafer and has a plurality of information blocks. In the...
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US20090093135 |
SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR CURING MATERIAL WITH UV LIGHT
Low dielectric constant materials are cured in a process chamber during semiconductor processing. The low dielectric constant materials are cured by irradiation with UV light. The atmosphere in the...
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