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US20090291569 |
LASER IRRADIATION METHOD AND LASER IRRADIATION APPARATUS
The present invention is to provide a laser irradiation technique for irradiating the irradiation surface with the laser beam having homogeneous intensity distribution using a cylindrical lens...
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US20090291549 |
METAL FILM DECARBONIZING METHOD, FILM FORMING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
On a Si substrate 1, i.e., a semiconductor substrate, a gate insulating film 2 is formed, and then a W-based film 3 a is formed on the gate insulating film 2 by CVD using a film forming gas...
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US20090289350 |
SEMICONDUCTOR PACKAGE, SUBSTRATE, ELECTRONIC DEVICE USING SUCH SEMICONDUCTOR PACKAGE OR SUBSTRATE, AND METHOD FOR CORRECTING WARPING OF SEMICONDUCTOR PACKAGE
Disclosed is a semiconductor package wherein a semiconductor chip is mounted on one surface of a substrate. In this semiconductor package, an inflection point forming portion made of a material...
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US20090289301 |
LASER ANNEALING OF METAL OXIDE SEMICONDUCTORON TEMPERATURE SENSITIVE SUBSTRATE FORMATIONS
A method of annealing a metal oxide on a temperature sensitive substrate formation includes the steps of providing a temperature sensitive substrate formation and forming a spacer layer on a...
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US20090286407 |
BAKING APPARATUS, BAKING MEHOD AND METHOD OF REDUCING GAP WIDTH
A baking apparatus including a hot plate and a substrate rotation member is provided. The hot plate has a heating surface. The substrate rotation member includes a rotation ring and a plurality of...
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US20090286401 |
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
A method of fabricating a semiconductor device according to one embodiment includes: forming a core material on a workpiece; forming a coating film comprising an amorphous material so as to cover...
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US20090286383 |
TREATMENT OF WHISKERS
A photo-curing or photosintering process is utilized to modify, reduce or eliminate whiskers or nanowires growing on a material surface.
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US20090275215 |
SUITABLY SHORT WAVELENGTH LIGHT FOR LASER ANNEALING OF SILICON IN DSA TYPE SYSTEMS
The present invention generally relates to a thermal processing apparatus and method that permits a user to index one or more preselected light sources capable of emitting one or more wavelengths...
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US20090269916 |
METHODS FOR FABRICATING MEMORY CELLS HAVING FIN STRUCTURES WITH SEMICIRCULAR TOP SURFACES AND ROUNDED TOP CORNERS AND EDGES
Methods for fabricating a FIN structure with a semicircular top surface and rounded top surface corners and edges are disclosed. As a part of a disclosed method, a FIN structure is formed in a...
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US20090269906 |
METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
A semiconductor substrate is provided by a method suitable for mass production. Further, a semiconductor substrate having an excellent characteristic with effective use of resources is provided. A...
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US20090269892 |
THIN FILM SEMICONDUCTOR DEVICE, POLYCRYSTALLINE SEMICONDUCTOR THIN FILM PRODUCTION PROCESS AND PRODUCTION APPARATUS
A process for producing an image display device using a thin film semiconductor device is provided which includes forming a polycrystalline semiconductor thin film on a substrate. A substantially...
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US20090263978 |
LASER MASK AND CRYSTALLIZATION METHOD USING THE SAME
An embodiment of a laser crystallization method includes providing a substrate on which an amorphous silicon thin film is deposited, positioning a laser mask over the substrate, the laser mask...
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US20090256172 |
METHOD OF LASER ANNEALING SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICES PRODUCED THEREBY
A laser annealing method includes forming a nitrogen-doped layer on a semiconductor layer, the nitrogen-doped layer having a nitrogen concentration of at least 3×10 20 atoms/cc, irradiating a...
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US20090253273 |
METHOD OF HEAT-TREATING SEMICONDUCTOR
The present invention relates to a method of heat-treating a semiconductor, and the object is to enable heat-treating to a semiconductor or semiconductor device in a short period time and to obtain...
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US20090250590 |
LASER IRRADIATION METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
The present invention is to provide a laser irradiation method for performing homogeneous laser irradiation to the irradiation object even when the thickness of the irradiation object is not even....
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US20090246975 |
MULTIPLE TECHNOLOGY NODE MASK
A multiple technology node mask (MTM) is provided. An MTM includes a pattern associated with a first technology node and a pattern associated with a second technology node. The first technology...
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US20090246904 |
Method for manufacturing a photovoltaic module
For manufacturing a photovoltaic module ( 1 ) having on a transparent substrate ( 2 ) a transparent front electrode layer ( 3 ), a semiconductor layer ( 4 ) and a back electrode layer ( 5 ) as...
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US20090239371 |
Method For Applying Selectively A Layer To A Structured Substrate By The Usage Of A Temperature Gradient In The Substrate
A semiconductor wafer ( 10 ) is structured such that fine structures ( 3 ), such as membranes, bridges or tongues, with a thickness d<<D are formed, wherein D designates the thickness of the...
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US20090233456 |
IRRADIATION OPTICAL SYSTEM, IRRADIATION APPARATUS AND FABRICATION METHOD FOR SEMICONDUCTOR DEVICE
An irradiation optical system includes: a first projection optical system for mixing a plurality of luminous fluxes outputted from a laser light source having a plurality of linearly arrayed light...
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US20090233455 |
SEMICONDUCTOR DEVICES HAVING TENSILE AND/OR COMPRESSIVE STRESS AND METHODS OF MANUFACTURING
A semiconductor device having a tensile and/or compressive strain applied thereto and methods of manufacturing the semiconductor devices to enhance channel strain. The method includes relaxing a...
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US20090233413 |
Method for fabricating semiconductor device
A method for fabricating a semiconductor device using a SOI substrate, includes the steps of: preparing a SOI substrate, comprises a semiconductor support layer; an insulating layer formed on the...
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US20090227121 |
Semiconductor device manufacturing method and semiconductor device manufacturing system
A semiconductor device manufacturing method and a semiconductor device manufacturing system for irradiating a first laser light ( 50 ) and a second laser light ( 52 ) with a wavelength different...
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US20090227119 |
METHOD FOR CURING A POROUS LOW DIELECTRIC CONSTANT DIELECTRIC FILM
A method of curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately...
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US20090221141 |
METHOD FOR PATTERNING CRYSTALLINE INDIUM TIN OXIDE USING FEMTOSECOND LASER
A method for patterning crystalline indium tin oxide (ITO) using femtosecond laser is disclosed, which comprises steps of: (a) providing a substrate with an amorphous ITO layer thereon; (b)...
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US20090218577 |
HIGH THROUGHPUT CRYSTALLIZATION OF THIN FILMS
Under one aspect, a method of processing a film includes defining a plurality of spaced-apart regions to be crystallized within a film, the film being disposed on a substrate and capable of...
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US20090215282 |
PROCESSES FOR CURING SILICON BASED LOW-K DIELECTRIC MATERIALS
Processes for curing silicon based low k dielectric materials generally includes exposing the exposing the silicon based low k dielectric material to ultraviolet radiation in an inert atmosphere...
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US20090212397 |
Ultrathin integrated circuit and method of manufacturing an ultrathin integrated circuit
A method of manufacturing an ultra thin integrated circuit comprises providing a substrate having a front side, a back side, and an edge extending from the front side to the back side; creating a...
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US20090209113 |
SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND CEILING INSULATING PART
Provided is a substrate processing apparatus. The substrate processing apparatus comprises a reaction vessel configured to process a substrate, and a heating device. The heating device comprises at...
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US20090209112 |
MILLISECOND ANNEALING (DSA) EDGE PROTECTION
A method and apparatus for thermally processing a substrate is provided. A substrate is disposed within a processing chamber configured for thermal processing by directing electromagnetic energy...
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US20090209111 |
Method for fabricating semiconductor device
A method for fabricating a semiconductor device, according to the present invention includes the steps of: preparing an SOI substrate, which comprises a semiconductor supporting layer, an oxide...
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US20090204252 |
SUBSTRATE PROCESSING METHOD AND APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND STORAGE MEDIUM
A substrate processing method includes a first step of forming a metal complex by allowing a processing gas containing an organic compound to be adsorbed by a metal layer formed on a target...
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US20090203231 |
CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, PHASE MODULATION ELEMENT, DEVICE AND DISPLAY APPARATUS
A phase modulation element according to the present invention has a first area having a first phase value based on a phase modulation unit having a predetermined size and a second area having a...
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US20090203230 |
Mask for crystallizing a semiconductor layer and method of crystallizing a semiconductor layer using the same
A mask for crystallizing a semiconductor layer includes a plurality of first main-slit portions, a plurality of second main-slit portions, upper slit portion and lower slit portion. The first...
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US20090203229 |
Substrate Processing Apparatus and Semiconductor Device Manufacturing Method
Provided is a substrate processing apparatus comprising: a process chamber for processing a substrate; a heater for heating an interior of the process chamber; a holder for sustaining the substrate...
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US20090203201 |
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
A method for fabricating a semiconductor device includes forming a dielectric film containing a porogen material above a substrate; removing a portion of the porogen material contained in the...
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US20090203191 |
METHOD FOR MANUFACTURING SOI SUBSTRATE
A semiconductor substrate and a base substrate made from an insulator are prepared; an oxide film containing a chlorine atom is formed over the semiconductor substrate; the semiconductor substrate...
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US20090203185 |
METHOD FOR FABRICATING DEVICE STRUCTURES HAVING A VARIATION IN ELECTRICAL CONDUCTIVITY
A method for forming device structures having a variation in electrical conductivity includes forming a device structure and a radiation absorbing layer overlying the device structure. The...
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US20090197427 |
IMPURITY-ACTIVATING THERMAL PROCESS METHOD AND THERMAL PROCESS APPARTUS
A thermal cycle includes: increasing a temperature from an initial temperature to a temperature T 1 at an arbitrary rate R 1 (° C./sec); holding the temperature at the temperature T 1 for an...
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US20090191723 |
METHOD OF PERFORMING LITHOGRAPHIC PROCESSES
Method of performing lithographic processes on a wafer in a lithographic apparatus having multiple stages. First, a lithographic apparatus including a first wafer chuck and a second wafer chuck is...
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US20090191694 |
MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE
A surface of a single crystal semiconductor substrate is irradiated with ions to form a damaged region, an insulating layer is formed over the surface of the single crystal semiconductor substrate,...
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US20090186431 |
LIGHT-EMITTING DEVICE AND ITS MANUFACTURING METHOD
In a light-emitting device and its manufacturing method, mounting by batch process with surface-mount technology, high light extraction efficiency, and low manufacturing cost are realized. The...
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US20090184399 |
SYSTEM FOR AND METHOD OF MICROWAVE ANNEALING SEMICONDUCTOR MATERIAL
A system for and method of processing, i.e., annealing semiconductor materials. By controlling the time, frequency, variance of frequency, microwave power density, wafer boundary conditions,...
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US20090184382 |
METHOD TO REDUCE DISLOCATION DENSITY IN SILICON
A crystalline material structure is provided. The crystalline material structure includes a semiconductor structure being annealed at temperatures above the brittle-to-ductile transition...
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US20090181552 |
LASER PROCESSING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
An SOI substrate having a single crystal semiconductor layer the surface of which has high planarity is manufactured. A semiconductor substrate is doped with hydrogen to form a damaged region...
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US20090181551 |
INTEGRATED CIRCUIT SYSTEM EMPLOYING MULTIPLE EXPOSURE DUMMY PATTERNING TECHNOLOGY
An integrated circuit system that includes: providing a substrate coated with a photoresist material; exposing the photoresist material to an energy source through a first mask to form a first...
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US20090179308 |
Method of Manufacturing a Semiconductor Device
According to one embodiment of the present invention, a method of manufacturing a semiconductor device is provided. The method includes: forming a semiconductor structure; forming a stress liner...
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US20090179208 |
Organic Luminescence Transistor Device and Manufacturing Method Thereof
The invention is an organic luminescence transistor device including: a substrate; an assistance electrode layer provided on an upper surface of the substrate; an insulation film provided on an...
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US20090176381 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS
There are provided a method of manufacturing a semiconductor device and a substrate processing apparatus that are designed to suppress a popping phenomenon and reduce residues remaining on a...
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US20090175606 |
METHOD AND STRUCTURE TO CONTROL THERMAL GRADIENTS IN SEMICONDUCTOR WAFERS DURING RAPID THERMAL PROCESSING
An article supports a workpiece during thermal processing. At least three elongated support members, e.g., support pins, extend upwardly from an element such as support arms for supporting the...
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US20090163042 |
THERMAL REACTOR WITH IMPROVED GAS FLOW DISTRIBUTION
Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for...
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