|
Match
|
Document |
Document Title |
|
|
US20090325393 |
HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS
Disclosed is a heat treatment method including a step of placing a wafer W provided with a low-k film and a metal layer in a heat treatment furnace 41, a step of supplying gaseous acetic anhydride...
|
|
|
US20110115057 |
DESIGN STRUCTURE FOR INTEGRATED CIRCUIT ALIGNMENT
A method and device for pattern alignment are disclosed. The device can include an exposure field; a die within the exposure field, wherein the die comprises an integrated circuit region, a seal...
|
|
|
US20080241968 |
MANUFACTURING METHOD, REMANUFACTURING METHOD AND RESHIPPING METHOD FOR A SEMICONDUCTOR MEMORY DEVICE
A manufacturing method, remanufacturing method and reshipping method for a semiconductor memory device capable of preventing the charge hold characteristic from deteriorating even if information...
|
|
|
US20110212630 |
METHOD FOR PREPARING A SELF-SUPPORTING CRYSTALLIZED SILICON THIN FILM
The invention relates to a method for preparing a self-supporting crystallized silicon thin film having a grain size of more than 1 mm. The invention also relates to the use of said method for...
|
|
|
US20100009548 |
METHOD FOR HEAT-TREATING SILICON WAFER
Provided is a heat treatment method wherein generation of slip dislocation in silicon wafer RTP is suppressed, in order to solve a problem of not sufficiently suppressing generation of slip...
|
|
|
US20070269993 |
Method for forming poly-silicon film
A method for forming a poly-silicon film, using sequential lateral solidification (SLS) by laser irradiation through an optical device to pattern the laser beam and provide a periodic energy...
|
|
|
US20070128889 |
SUBSTRATE HEAT TREATMENT APPARATUS
A heat-treating plate has, arranged on the upper surface thereof, support elements for supporting a substrate, and a first sealer for closing lateral areas of a first space formed between the...
|
|
|
US20090203185 |
METHOD FOR FABRICATING DEVICE STRUCTURES HAVING A VARIATION IN ELECTRICAL CONDUCTIVITY
A method for forming device structures having a variation in electrical conductivity includes forming a device structure and a radiation absorbing layer overlying the device structure. The...
|
|
|
US20080191121 |
FOCUSED LASER BEAM PROCESSING
Methods and systems for processing semiconductor materials with a focused laser beam. Laser light may be focused on a sample to alter material properties at the sample surface. The laser beam has a...
|
|
|
US20060116000 |
Manufacturing method of insulating film and semiconductor device
The invention provides a manufacturing method of an insulating film having a plurality of pores, as well as a manufacturing method of a highly integrated semiconductor device with high yield....
|
|
|
US20080057740 |
DOPANT ACTIVATION IN DOPED SEMICONDUCTOR SUBSTRATES
Methods are disclosed for activating dopants in a doped semiconductor substrate. A carbon precursor is flowed into a substrate processing chamber within which the doped semiconductor substrate is...
|
|
|
US20120184112 |
MASK FOR CRYSTALLIZING A SEMICONDUCTOR LAYER AND METHOD OF CRYSTALLIZING A SEMICONDUCTOR LAYER USING THE SAME
A mask for crystallizing a semiconductor layer includes a plurality of first main-slit portions, a plurality of second main-slit portions, upper slit portion and lower slit portion. The first...
|
|
|
US20090008346 |
Vertical Boat for Heat Treatment and a Method for Heat Treatment
The present invention is a vertical boat 8 for heat treatment by which a plurality of wafer-like objects to be treated are supported with an interval in a vertical direction by a column having...
|
|
|
US20090179308 |
Method of Manufacturing a Semiconductor Device
According to one embodiment of the present invention, a method of manufacturing a semiconductor device is provided. The method includes: forming a semiconductor structure; forming a stress liner...
|
|
|
US20080011735 |
HEAT TREATMENT EQUIPMENT
In an embodiment, heat treatment equipment comprises a process tube, an exhaust duct connected to the process tube, and, during operation, exhausting gases present within the process tube. The heat...
|
|
|
US20100238149 |
DISPLAY DEVICE ADN METHOD FOR MANUFACTURING THE SAME
A pixel circuit (Aij) has a capacitor (Cs) having one of ends connected with a gate terminal of a DTFT (driving TFT) and the other end connected with a capacitance feedback line (CSi), a...
|
|
|
US20090311880 |
Method of Annealing Using Two Wavelengths of Continuous Wave Laser Radiation
A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for ...
|
|
|
US20090121157 |
PULSE TRAIN ANNEALING METHOD AND APPARATUS
The present invention generally describes apparatuses and methods used to perform an annealing process on desired regions of a substrate. In one embodiment, pulses of electromagnetic energy are...
|
|
|
US20100027273 |
COATINGS FOR REFLECTIVE SURFACES
Systems and methods of coatings for reflective surfaces. An optical system includes a reflective surface for reflecting optical energy and a transparent coating disposed upon the reflective...
|
|
|
US20070249128 |
Ultraviolet (UV) Radiation Treatment Methods for Subatmospheric Chemical Vapor Deposition (SACVD) of Ozone-Tetraethoxysilane (O3-TEOS)
Dielectric layers are formed on a substrate by performing Subatmospheric Chemical Vapor Deposition (SACVD) of ozone-tetraethoxysilane (O3-TEOS) to form a layer of O3-TEOS on the substrate, and...
|
|
|
US20120138136 |
SEMICONDUCTOR MATERIAL AND ITS APPLICATION AS AN ABSORBER MATERIAL FOR SOLAR CELLS
This invention describes a semiconductor material of general formula (I) Me12Me21-xMe3xMe4(C11-yC2y)4, in which x stands for a numeric value from 0 to 1, and y stands for a numeric value of 0 to 1,...
|
|
|
US20090256172 |
METHOD OF LASER ANNEALING SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICES PRODUCED THEREBY
A laser annealing method includes forming a nitrogen-doped layer on a semiconductor layer, the nitrogen-doped layer having a nitrogen concentration of at least 3×1020 atoms/cc, irradiating a first ...
|
|
|
US20080268659 |
HIGH TEMPERATURE METHODS FOR ENHANCING RETENTION CHARACTERISTICS OF MEMORY DEVICES
Methods are described for improving the retention of a memory device by execution of a retention improvement procedure. The retention improvement procedure comprises a baking process of the memory...
|
|
|
US20050123288 |
Gas injection head, method for manufacturing the same, semiconductor manufacturing device with the gas injection head and anti-corrosion product
A gas injection head which is configured to jet a reactive gas includes a head surface. The gas injection head includes a nitride ceramic containing a rare earth compound which is present on the...
|
|
|
US20130105801 |
DISPLAY SUBSTRATE METHOD OF REPAIRING A DISPLAY SUBSTRATE, AND DISPLAY DEVICE INCLUDING THE DISPLAY SUBSTRATE
Display substrates including a capacitor, methods of repairing a display substrate, and display devices including the display substrate are disclosed. In one embodiment, the capacitor includes a...
|
|
|
US20090136780 |
METHOD OF REDUCING DISLOCATIONS IN GROUP III NITRIDE CRYSTAL, AND SUBSTRATE FOR EPITAXIAL GROWTH
An epitaxial substrate 10 including a single-crystal base material 1 and an upper layer 2 of a group III nitride crystal film which is epitaxially formed on a main surface of the base material...
|
|
|
US20120100649 |
METHOD FOR MANUFACTURING A FILM STRUCTURE
Provided is a method for manufacturing a film structure. The method for manufacturing the film structure n includes forming a layer of a precursor material on a substrate, preheating the precursor...
|
|
|
US20090163042 |
THERMAL REACTOR WITH IMPROVED GAS FLOW DISTRIBUTION
Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for...
|
|
|
US20050287824 |
ECR-plasma source and methods for treatment of semiconductor structures
The invention relates to microelectronics, more particularly, to methods of manufacturing solid-state devices and integrated circuits utilizing microwave plasma enhancement under conditions of...
|
|
|
US20130029473 |
METHOD OF CLEAVING SUBSTRATE AND METHOD OF MANUFACTURING BONDED SUBSTRATE USING THE SAME
A method of cleaving a substrate and a method of manufacturing a bonded substrate using the same, in which warping in a cleaved substrate is reduced. The method includes the following steps of:...
|
|
|
US20110217852 |
SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Provided is technology for preventing breakage of an induction target part of a substrate processing apparatus using an induction heating method. The substrate processing apparatus including a...
|
|
|
US20090298299 |
LASER ABLATION OF ELECTRONIC DEVICES
The present invention relates to methods of fabricating electronic devices using laser ablation and to devices fabricated thereby. Embodiments of the methods are particularly suitable for defining...
|
|
|
US20080207008 |
Microwave hybrid and plasma rapid thermal processing of semiconductor wafers
Microwave energy is used as a radiation source for rapid thermal processing of semiconductor wafers. In one aspect, a hybrid material formed from a microwave modulator material is used to provide...
|
|
|
US20100330815 |
APPARATUS AND METHOD FOR HEATING SUBSTRATE AND COATING AND DEVELOPING SYSTEM
A substrate heating apparatus includes a top plate arranged above a hot plate so that a vertical space is formed between the hot plate and the top plate. The top plate has an evacuated internal...
|
|
|
US20080160788 |
METHODS FOR PRODUCING SMOOTH WAFERS
Methods for reducing the surface roughness of semiconductor wafers through a combination of rough polishing and thermally annealing the wafer.
|
|
|
US20080296628 |
SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING SAME
A semiconductor integrated circuit includes at least one first circuit portion and at least one second circuit portion. The first circuit portion includes a first interconnect or a diffusion layer...
|
|
|
US20060040512 |
Single-shot semiconductor processing system and method having various irradiation patterns
High throughput systems and processes for recrystallizing thin film semiconductors that have been deposited at low temperatures on a substrate are provided. A thin film semiconductor workpiece is...
|
|
|
US20080176145 |
Method for manufacturing holographic recording medium and method for manufacturing semiconductor device
To provide a method for manufacturing a holographic recording medium and a method for manufacturing a semiconductor device, by which effects of distortion or irregularities of the surface of an...
|
|
|
US20120074575 |
COPPER LINE HAVING SELF-ASSEMBLED MONOLAYER FOR ULSI SEMICONDUCTOR DEVICES, AND A METHOD OF FORMING SAME
A copper line having self assembled monolayer for use in ULSI semiconductor devices and methods of making the same are presented. The copper line includes an interlayer dielectric, a self-assembled...
|
|
|
US20100009547 |
LASER WORKING METHOD
An object to be processed is restrained from warping at the time of laser processing. A modified region M2 is formed within a wafer 11, and fractures a2, b2 extending in directions parallel to the...
|
|
|
US20090233455 |
SEMICONDUCTOR DEVICES HAVING TENSILE AND/OR COMPRESSIVE STRESS AND METHODS OF MANUFACTURING
A semiconductor device having a tensile and/or compressive strain applied thereto and methods of manufacturing the semiconductor devices to enhance channel strain. The method includes relaxing a...
|
|
|
US20060154495 |
Device for cleaning the surface of a component
A detached particle capture means by laser (4) allows them to be attracted and prevented from dropping back better than a traditional blow-off flushing means would. Various categories of attractive...
|
|
|
US20080220550 |
METHOD OF PRODUCING N-TYPE GROUP-13 NITRIDE SEMICONDUCTOR, METHOD OF FORMING CURRENT CONFINEMENT LAYER, METHOD OF PRODUCING SURFACE EMITTING LASER, METHOD OF CHANGING RESISTANCE OF NITRIDE SEMICONDUCTOR AND METHOD OF PRODUCING SEMICONDUCTOR LASER
The object of the present invention is to provide a method of producing an n-type group-13 nitride semiconductor which enables resistance of the n-type group-13 nitride semiconductor to be changed,...
|
|
|
US20050101160 |
Silicon thin film transistors and solar cells on plastic substrates
Method for fabricating a silicon-containing film which comprises depositing a thin film of amorphous silicon on a substrate by a plasma-enhanced chemical vapor deposition process in a reaction...
|
|
|
US20080166891 |
HEAT TREATMENT METHOD FOR SILICON WAFER
The present invention provides a heat treatment method for a silicon wafer in which, with respect to a surface of the silicon wafer made flat at an atomic level by a high-temperature heat-treatment...
|
|
|
US20090212397 |
Ultrathin integrated circuit and method of manufacturing an ultrathin integrated circuit
A method of manufacturing an ultra thin integrated circuit comprises providing a substrate having a front side, a back side, and an edge extending from the front side to the back side; creating a...
|
|
|
US20070032097 |
Method and apparatus for processing semiconductor work pieces
A processing apparatus for semiconductor work pieces and related methodology is disclosed and which includes a processing chamber having an internal cavity, and which has a plurality of rotatable...
|
|
|
US20110028004 |
Inspection Method and Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Device Manufacturing Method
A mark used in the determination of overlay error comprises sub-features, the sub-features having a smallest pitch approximately equal to the smallest pitch of the product features. The sensitivity...
|
|
|
US20090215282 |
PROCESSES FOR CURING SILICON BASED LOW-K DIELECTRIC MATERIALS
Processes for curing silicon based low k dielectric materials generally includes exposing the exposing the silicon based low k dielectric material to ultraviolet radiation in an inert atmosphere...
|
|
|
US20090095962 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING DISPLAY APPARATUS, APPARATUS OF MANUFACTURING SEMICONDUCTOR DEVICE, AND DISPLAY APPARATUS
A method of manufacturing a semiconductor device includes the steps of: modifying a semiconductor film by applying a laser beam; and forming a semiconductor device on the modified semiconductor...
|