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US20100273334 MILLISECOND ANNEALING (DSA) EDGE PROTECTION  
A method and apparatus for thermally processing a substrate is provided. A substrate is disposed within a processing chamber configured for thermal processing by directing electromagnetic energy...
US20140113458 MINIMAL CONTACT EDGE RING FOR RAPID THERMAL PROCESSING  
Embodiments of the disclosure generally relate to a support ring that supports a substrate in a process chamber. In one embodiment, the support ring comprises an inner ring, an outer ring...
US20050142817 Surface planarization method of sequential lateral solidification crystallized poly-silicon thin film  
Provided is a method for planarizing a polysilicon surface grown by means of a sequential lateral solidification method, which comprises the steps of: crystallizing an amorphous silicon having a...
US20070161133 Method for implanting carbon nanotube  
The present invention relates to a method of implanting carbon nanotube (CNT), which is especially being adopted for forming CNTs in carbon nanotube field emitting displays (CNT-FEDs). The method...
US20070020785 Systems and methods for alignment of laser beam(s) for semiconductor link processing  
A method makes a discrete adjustment to static alignment of a laser beam in a machine for selectively irradiating conductive links on or within a semiconductor substrate using the laser beam. The...
US20110003484 MASK FOR CRYSTALLIZING SILICON, APPARATUS HAVING THE MASK AND METHOD OF CRYSTALLIZING WITH THE MASK  
A mask for crystallizing silicon includes a first, a second, and a third pattern part arranged in a longitudinal direction, each of the first, second, and third pattern parts including a plurality...
US20100009549 WAFER TREATING METHOD  
A wafer treating method includes the steps of irradiating a wafer, provided with devices on the face side, from the back side with a laser beam capable of being transmitted through the wafer, while...
US20100210117 SELECTIVE REMOVAL OF OXYGEN FROM METAL-CONTAINING MATERIALS  
Oxygen is selectively removed from metal-containing materials in a partially-fabricated integrated circuit. In some embodiments, the partially-fabricated integrated circuit has exposed silicon and...
US20090286407 BAKING APPARATUS, BAKING MEHOD AND METHOD OF REDUCING GAP WIDTH  
A baking apparatus including a hot plate and a substrate rotation member is provided. The hot plate has a heating surface. The substrate rotation member includes a rotation ring and a plurality of...
US20100041220 METHODS FOR UNIFORMLY OPTICALLY ANNEALING REGIONS OF A SEMICONDUCTOR SUBSTRATE  
Methods for uniformly optically annealing regions of a semiconductor substrate and methods for fabricating semiconductor substrates using uniform optical annealing are provided. In accordance with...
US20100015817 VERTICAL HEAT TREATMENT BOAT AND HEAT TREATMENT METHOD FOR SEMICONDUCTOR WAFER  
The present invention provides a vertical heat treatment boat that has at least four or more support portions per processing target substrate to be supported, the support portions horizontally...
US20090325393 HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS  
Disclosed is a heat treatment method including a step of placing a wafer W provided with a low-k film and a metal layer in a heat treatment furnace 41, a step of supplying gaseous acetic anhydride...
US20110115057 DESIGN STRUCTURE FOR INTEGRATED CIRCUIT ALIGNMENT  
A method and device for pattern alignment are disclosed. The device can include an exposure field; a die within the exposure field, wherein the die comprises an integrated circuit region, a seal...
US20080241968 MANUFACTURING METHOD, REMANUFACTURING METHOD AND RESHIPPING METHOD FOR A SEMICONDUCTOR MEMORY DEVICE  
A manufacturing method, remanufacturing method and reshipping method for a semiconductor memory device capable of preventing the charge hold characteristic from deteriorating even if information...
US20140239390 LATERAL DEVICES CONTAINING PERMANENT CHARGE  
A lateral device includes a gate region connected to a drain region by a drift layer. An insulation region adjoins the drift layer between the gate region and the drain region. Permanent charges...
US20110212630 METHOD FOR PREPARING A SELF-SUPPORTING CRYSTALLIZED SILICON THIN FILM  
The invention relates to a method for preparing a self-supporting crystallized silicon thin film having a grain size of more than 1 mm. The invention also relates to the use of said method for...
US20100009548 METHOD FOR HEAT-TREATING SILICON WAFER  
Provided is a heat treatment method wherein generation of slip dislocation in silicon wafer RTP is suppressed, in order to solve a problem of not sufficiently suppressing generation of slip...
US20130288488 OZONE PLENUM AS UV SHUTTER OR TUNABLE UV FILTER FOR CLEANING SEMICONDUCTOR SUBSTRATES  
A quartz window with an interior plenum is operable as a shutter or UV filter in a degas chamber by supplying the plenum with an ozone-containing gas. Pressure in the plenum can be adjusted to...
US20070269993 Method for forming poly-silicon film  
A method for forming a poly-silicon film, using sequential lateral solidification (SLS) by laser irradiation through an optical device to pattern the laser beam and provide a periodic energy...
US20070128889 SUBSTRATE HEAT TREATMENT APPARATUS  
A heat-treating plate has, arranged on the upper surface thereof, support elements for supporting a substrate, and a first sealer for closing lateral areas of a first space formed between the...
US20090203185 METHOD FOR FABRICATING DEVICE STRUCTURES HAVING A VARIATION IN ELECTRICAL CONDUCTIVITY  
A method for forming device structures having a variation in electrical conductivity includes forming a device structure and a radiation absorbing layer overlying the device structure. The...
US20080191121 FOCUSED LASER BEAM PROCESSING  
Methods and systems for processing semiconductor materials with a focused laser beam. Laser light may be focused on a sample to alter material properties at the sample surface. The laser beam has a...
US20060116000 Manufacturing method of insulating film and semiconductor device  
The invention provides a manufacturing method of an insulating film having a plurality of pores, as well as a manufacturing method of a highly integrated semiconductor device with high yield....
US20080057740 DOPANT ACTIVATION IN DOPED SEMICONDUCTOR SUBSTRATES  
Methods are disclosed for activating dopants in a doped semiconductor substrate. A carbon precursor is flowed into a substrate processing chamber within which the doped semiconductor substrate is...
US20120184112 MASK FOR CRYSTALLIZING A SEMICONDUCTOR LAYER AND METHOD OF CRYSTALLIZING A SEMICONDUCTOR LAYER USING THE SAME  
A mask for crystallizing a semiconductor layer includes a plurality of first main-slit portions, a plurality of second main-slit portions, upper slit portion and lower slit portion. The first...
US20090008346 Vertical Boat for Heat Treatment and a Method for Heat Treatment  
The present invention is a vertical boat 8 for heat treatment by which a plurality of wafer-like objects to be treated are supported with an interval in a vertical direction by a column having...
US20090179308 Method of Manufacturing a Semiconductor Device  
According to one embodiment of the present invention, a method of manufacturing a semiconductor device is provided. The method includes: forming a semiconductor structure; forming a stress liner...
US20080011735 HEAT TREATMENT EQUIPMENT  
In an embodiment, heat treatment equipment comprises a process tube, an exhaust duct connected to the process tube, and, during operation, exhausting gases present within the process tube. The heat...
US20100238149 DISPLAY DEVICE ADN METHOD FOR MANUFACTURING THE SAME  
A pixel circuit (Aij) has a capacitor (Cs) having one of ends connected with a gate terminal of a DTFT (driving TFT) and the other end connected with a capacitance feedback line (CSi), a...
US20140092384 DIFFRACTION GRATING MANUFACTURING METHOD, SPECTROPHOTOMETER, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD  
The present invention has been made in view of the above, and an object thereof is to provide a manufacturing technique capable of manufacturing a diffraction grating which is suitable for use in a...
US20090311880 Method of Annealing Using Two Wavelengths of Continuous Wave Laser Radiation  
A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for ...
US20090121157 PULSE TRAIN ANNEALING METHOD AND APPARATUS  
The present invention generally describes apparatuses and methods used to perform an annealing process on desired regions of a substrate. In one embodiment, pulses of electromagnetic energy are...
US20100027273 COATINGS FOR REFLECTIVE SURFACES  
Systems and methods of coatings for reflective surfaces. An optical system includes a reflective surface for reflecting optical energy and a transparent coating disposed upon the reflective...
US20070249128 Ultraviolet (UV) Radiation Treatment Methods for Subatmospheric Chemical Vapor Deposition (SACVD) of Ozone-Tetraethoxysilane (O3-TEOS)  
Dielectric layers are formed on a substrate by performing Subatmospheric Chemical Vapor Deposition (SACVD) of ozone-tetraethoxysilane (O3-TEOS) to form a layer of O3-TEOS on the substrate, and...
US20120138136 SEMICONDUCTOR MATERIAL AND ITS APPLICATION AS AN ABSORBER MATERIAL FOR SOLAR CELLS  
This invention describes a semiconductor material of general formula (I) Me12Me21-xMe3xMe4(C11-yC2y)4, in which x stands for a numeric value from 0 to 1, and y stands for a numeric value of 0 to 1,...
US20090256172 METHOD OF LASER ANNEALING SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICES PRODUCED THEREBY  
A laser annealing method includes forming a nitrogen-doped layer on a semiconductor layer, the nitrogen-doped layer having a nitrogen concentration of at least 3×1020 atoms/cc, irradiating a first ...
US20080268659 HIGH TEMPERATURE METHODS FOR ENHANCING RETENTION CHARACTERISTICS OF MEMORY DEVICES  
Methods are described for improving the retention of a memory device by execution of a retention improvement procedure. The retention improvement procedure comprises a baking process of the memory...
US20050123288 Gas injection head, method for manufacturing the same, semiconductor manufacturing device with the gas injection head and anti-corrosion product  
A gas injection head which is configured to jet a reactive gas includes a head surface. The gas injection head includes a nitride ceramic containing a rare earth compound which is present on the...
US20130105801 DISPLAY SUBSTRATE METHOD OF REPAIRING A DISPLAY SUBSTRATE, AND DISPLAY DEVICE INCLUDING THE DISPLAY SUBSTRATE  
Display substrates including a capacitor, methods of repairing a display substrate, and display devices including the display substrate are disclosed. In one embodiment, the capacitor includes a...
US20090136780 METHOD OF REDUCING DISLOCATIONS IN GROUP III NITRIDE CRYSTAL, AND SUBSTRATE FOR EPITAXIAL GROWTH  
An epitaxial substrate 10 including a single-crystal base material 1 and an upper layer 2 of a group III nitride crystal film which is epitaxially formed on a main surface of the base material...
US20120100649 METHOD FOR MANUFACTURING A FILM STRUCTURE  
Provided is a method for manufacturing a film structure. The method for manufacturing the film structure n includes forming a layer of a precursor material on a substrate, preheating the precursor...
US20090163042 THERMAL REACTOR WITH IMPROVED GAS FLOW DISTRIBUTION  
Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for...
US20050287824 ECR-plasma source and methods for treatment of semiconductor structures  
The invention relates to microelectronics, more particularly, to methods of manufacturing solid-state devices and integrated circuits utilizing microwave plasma enhancement under conditions of...
US20130029473 METHOD OF CLEAVING SUBSTRATE AND METHOD OF MANUFACTURING BONDED SUBSTRATE USING THE SAME  
A method of cleaving a substrate and a method of manufacturing a bonded substrate using the same, in which warping in a cleaved substrate is reduced. The method includes the following steps of:...
US20110217852 SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE  
Provided is technology for preventing breakage of an induction target part of a substrate processing apparatus using an induction heating method. The substrate processing apparatus including a...
US20090298299 LASER ABLATION OF ELECTRONIC DEVICES  
The present invention relates to methods of fabricating electronic devices using laser ablation and to devices fabricated thereby. Embodiments of the methods are particularly suitable for defining...
US20080207008 Microwave hybrid and plasma rapid thermal processing of semiconductor wafers  
Microwave energy is used as a radiation source for rapid thermal processing of semiconductor wafers. In one aspect, a hybrid material formed from a microwave modulator material is used to provide...
US20100330815 APPARATUS AND METHOD FOR HEATING SUBSTRATE AND COATING AND DEVELOPING SYSTEM  
A substrate heating apparatus includes a top plate arranged above a hot plate so that a vertical space is formed between the hot plate and the top plate. The top plate has an evacuated internal...
US20080160788 METHODS FOR PRODUCING SMOOTH WAFERS  
Methods for reducing the surface roughness of semiconductor wafers through a combination of rough polishing and thermally annealing the wafer.
US20080296628 SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING SAME  
A semiconductor integrated circuit includes at least one first circuit portion and at least one second circuit portion. The first circuit portion includes a first interconnect or a diffusion layer...