Matches 1 - 26 out of 26
Match Document Document Title
US20090283874 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE  
Disclosed is a semiconductor device manufacturing method in which a silicon nitride film is formed to cover an n-channel transistor formed on a semiconductor substrate and to apply a tensile stress...
US20090246974 METHOD OF FORMING A STRESSED PASSIVATION FILM USING A MICROWAVE-ASSISTED OXIDATION PROCESS  
A method for forming a stressed passivation film. In one embodiment, the method includes depositing a silicon nitride film over an integrated circuit structure on a substrate and embedding oxygen...
US20090246973 METHOD OF FORMING A STRESSED PASSIVATION FILM USING A NON-IONIZING ELECTROMAGNETIC RADIATION-ASSISTED OXIDATION PROCESS  
A method for forming a stressed passivation film. In one embodiment, the method includes depositing a silicon nitride film over an integrated circuit structure on a substrate and embedding oxygen...
US20090218629 ETCH STOP LAYER OF REDUCED THICKNESS FOR PATTERNING A DIELECTRIC MATERIAL IN A CONTACT LEVEL OF CLOSELY SPACED TRANSISTORS  
In a dual stress liner approach, an intermediate etch stop material may be provided on the basis of a plasma-assisted oxidation process rather than by deposition so the corresponding thickness of...
US20090203228 PLASMA CVD METHOD, METHOD FOR FORMING SILICON NITRIDE FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND PLASMA CVD METHOD  
A plasma processing apparatus includes a process chamber configured to be vacuum-exhausted; a worktable configured to place a target substrate thereon inside the process chamber; a microwave...
US20090197376 PLASMA CVD METHOD, METHOD FOR FORMING SILICON NITRIDE FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE  
A plasma processing apparatus generates plasma by introducing microwaves into a processing chamber by using a planar antenna having a plurality of slots. By using the plasma processing apparatus, a...
US20090176380 PLASMA TREATMENT METHOD AND PLASMA TREATMENT DEVICE  
Provided are a plasma treatment method and a plasma treatment device capable of forming a silicon nitride film having high compressive stress. In the plasma treatment method for depositing the...
US20090163041 LOW WET ETCH RATE SILICON NITRIDE FILM  
The present invention pertains to methods of depositing low wet etch rate silicon nitride films on substrates using high-density plasma chemical vapor deposition techniques at substrate...
US20090152639 Laminated Stress Overlayer Using In-SITU Multiple Plasma Treatments for Transistor Improvement  
Integrated circuits (ICs) commonly contain pre-metal dielectric (PMD) liners with compressive stress to increase electron and hole mobilities in MOS transistors. The increase is limited by the...
US20090146264 THIN FILM TRANSISTOR ON SODA LIME GLASS WITH BARRIER LAYER  
The present invention generally comprises a low cost TFT and a method of manufacturing a TFT. For TFTs, soda lime glass would be an attractive alternative to non-alkali glass, but a soda lime glass...
US20090142935 METHOD FOR FORMING SILAZANE-BASED DIELECTRIC FILM  
A method of forming a dielectric film includes: introducing a source gas essentially constituted by Si, N, H, and optionally C and having at least one bond selected from Si—N, Si—Si, and Si—H...
US20090124097 METHOD OF FORMING NARROW FINS IN FINFET DEVICES WITH REDUCED SPACING THEREBETWEEN  
A method of forming narrow fins in a substrate includes forming a sacrificial mandrel layer over the substrate; using a photolithographic process to pattern the mandrel layer so as to perform a...
US20090104790 Methods for Forming a Dielectric Layer Within Trenches  
A method for forming a semiconductor structure includes reacting a silicon precursor and an atomic oxygen or nitrogen precursor at a processing temperature of about 150° C. or less to form a...
US20090090990 FORMATION OF NITROGEN CONTAINING DIELECTRIC LAYERS HAVING AN IMPROVED NITROGEN DISTRIBUTION  
Provided is a method for manufacturing a gate dielectric. This method, without limitation, includes subjecting a silicon substrate to a first plasma nitridation process to incorporate a nitrogen...
US20090068854 SILICON NITRIDE GAP-FILLING LAYER AND METHOD OF FABRICATING THE SAME  
A method for fabricating a silicon nitride gap-filling layer is provided. A pre-multi-step formation process is performed to form a stacked layer constituting as a dense film on a substrate. Then,...
US20090035927 METHOD OF FORMING DIELECTRIC LAYERS ON A SUBSTRATE AND APPARATUS THEREFOR  
Methods of forming dielectric layers on a substrate comprising silicon and oxygen are disclosed herein. In some embodiments, a method of forming a dielectric layer on a substrate includes provide a...
US20090023301 FILM DEPOSITION APPARATUS, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, AND METHOD OF COATING THE FILM DEPOSITION APPARATUS  
A method of manufacturing a semiconductor device has supplying a first reactant gas into buffer chamber provided in a reaction chamber of the film deposition apparatus to form a first film over an...
US20090004887 APPARATUS AND METHOD FOR DEPOSITION OF PROTECTIVE FILM FOR ORGANIC ELECTROLUMINESCENCE  
In a film deposition apparatus which deposition a film through SWP-CVD, a substrate holder on which a substrate is to be placed is provided with cooling means, thereby inhibiting occurrence of an...
US20080305648 METHOD FOR FORMING INORGANIC SILAZANE-BASED DIELECTRIC FILM  
A method of forming an inorganic silazane-based dielectric film includes: introducing a gas constituted by Si and H and a gas constituted by N and optionally H into a reaction chamber where an...
US20080286984 SILICON-RICH LOW-HYDROGEN CONTENT SILICON NITRIDE FILM  
In one embodiment, a method for forming a silicon nitride film is provided. The method includes providing a plasma-enhanced chemical vapor deposition (PECVD) reactor with a semiconductor substrate...
US20080176413 SELECTIVE PLASMA PROCESSING METHOD  
A selective plasma processing method, within a processing chamber of a plasma processing apparatus, acts oxygen-containing plasma on a target object having silicon and a silicon nitride layer to...
US20080173985 DIELECTRIC CAP HAVING MATERIAL WITH OPTICAL BAND GAP TO SUBSTANTIALLY BLOCK UV RADIATION DURING CURING TREATMENT, AND RELATED METHODS  
A dielectric cap and related methods are disclosed. In one embodiment, the dielectric cap includes a dielectric material having an optical band gap (e.g. greater than about 3.0 electron-Volts) to...
US20080113521 METHOD OF FORMING ULTRA-THIN SiN FILM BY PLASMA CVD  
A method of forming an ultra-thin SiN film includes: supplying a Si source gas into a reactor in which a substrate is placed on a susceptor; supplying an N source gas into the reactor at a flow...
US20080087965 STRUCTURE AND METHOD OF FORMING TRANSISTOR DENSITY BASED STRESS LAYERS IN CMOS DEVICES  
A method for increasing carrier mobility of transistors included in an semiconductor device includes forming a stress inducing layer over a plurality of transistors, the transistors formed in...
US20080070400 Semiconductor device and manufacturing method thereof  
When forming a silicon nitride film to protect and insulate a surface on which a silicon substrate has been ground or polishing, by use of a mixed gas containing SiH 4 , N 2 , and NH 3 as a...
US20080045039 METHOD OF FORMING NITRIDE FILMS WITH HIGH COMPRESSIVE STRESS FOR IMPROVED PFET DEVICE PERFORMANCE  
A method is provided for making a FET device in which a nitride layer overlies the PFET gate structure, where the nitride layer has a compressive stress with a magnitude greater than about 2.8 GPa....
Matches 1 - 26 out of 26