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US20130011990 Methods of Making Crystalline Tantalum Pentoxide  
There is disclosed a method of forming crystalline tantalum pentoxide on a ruthenium-containing material having an oxygen-containing surface wherein the oxygen-containing surface is contacted with...
US20110300721 Methods of Making Crystalline Tantalum Pentoxide  
There is disclosed a method of forming crystalline tantalum pentoxide on a ruthenium-containing material having an oxygen-containing surface wherein the oxygen-containing surface is contacted with...
US20130316546 METHODS OF ATOMIC LAYER DEPOSITION OF HAFNIUM OXIDE AS GATE DIELECTRICS  
In some embodiments, the present invention discloses a two-step deposition process for forming hafnium oxide gate dielectric, comprising an interface layer deposition followed by a bulk layer...
US20140170861 HAFNIUM-CONTAINING AND ZIRCONIUM-CONTAINING PRECURSORS FOR VAPOR DEPOSITION  
Disclosed are hafnium-containing and zirconium-containing precursors and methods of synthesizing the same. The compounds may be used to deposit hafnium, zirconium, hafnium oxide, and zirconium...
US20070158765 Gallium lanthanide oxide films  
Electronic apparatus and methods of forming the electronic apparatus include a gallium lanthanide oxide film for use in a variety of electronic systems. The gallium lanthanide oxide film may be...
US20140127913 TITANIUM-CONTAINING PRECURSORS FOR VAPOR DEPOSITION  
Disclosed are titanium-containing precursors and methods of synthesizing the same. The compounds may be used to deposit titanium, titanium oxide, strontium-titanium oxide, and barium strontium...
US20130164947 TITANIUM-CONTAINING PRECURSORS FOR VAPOR DEPOSITION  
Disclosed are titanium-containing precursors and methods of synthesizing the same. The compounds may be used to deposit titanium, titanium oxide, strontium-titanium oxide, and barium strontium...
US20130313657 METHODS OF FORMING FLUORINATED HAFNIUM OXIDE GATE DIELECTRICS BY ATOMIC LAYER DEPOSITION  
In some embodiments, the present invention discloses a gate dielectric deposition process, including depositing a fluorinated hafnium oxide by an ALD process utilizing a fluorinated hafnium...
US20070117308 Semiconductor constructions, and methods of forming semiconductor constructions  
The invention includes methods of utilizing compositions containing iridium and tantalum in semiconductor constructions, and includes semiconductor constructions comprising compositions containing...
US20070018214 Magnesium titanium oxide films  
Embodiments of a magnesium titanium oxide structure on a substrate provide a dielectric for use in a variety of electronic devices. Embodiments of methods of fabricating such a dielectric include...
US20100041244 HAFNIUM TANTALUM OXYNITRIDE DIELECTRIC  
Electronic apparatus and methods may include a hafnium tantalum oxynitride film on a substrate for use in a variety of electronic systems. The hafnium tantalum oxynitride film may be structured as...
US20150140838 Two Step Deposition of High-k Gate Dielectric Materials  
Methods and apparatus for forming a dielectric layer for use as a gate dielectric are provided. A high-k layer is formed with first ALD process using a halogen-based precursor. The metal in the...
US20130175665 THERMALLY STABLE HIGH-K TETRAGONAL HFO2 LAYER WITHIN HIGH ASPECT RATIO DEEP TRENCHES  
A trench structure that in one embodiment includes a trench present in a substrate, and a dielectric layer that is continuously present on the sidewalls and base of the trench. The dielectric...
US20120202358 GRADED DIELECTRIC STRUCTURES  
Graded dielectric layers and methods of fabricating such dielectric layers provide dielectrics in a variety of electronic structures for use in a wide range of electronic devices and systems. In...
US20070049054 Cobalt titanium oxide dielectric films  
Electronic apparatus and methods of forming the electronic apparatus include a cobalt titanium oxide film on a substrate for use in a variety of electronic systems. The cobalt titanium oxide film...
US20150091134 ATOMIC LAYER DEPOSITION  
A method of depositing a material on a substrate using an atomic layer deposition process, wherein the deposition process comprises a first deposition step, a second deposition step subsequent to...
US20080293256 Method for forming bismuth titanium silicon oxide thin film  
A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor...
US20140017906 METHOD FOR FORMING TIN BY PVD  
A method for forming titanium nitride by PVD is disclosed, comprising: generating ions of a noble gas by glow discharge under a vacuum condition that a nitrogen gas and the noble gas are supplied;...
US20060211154 Method of manufacturing patterned ferroelectric media  
A method of manufacturing patterned ferroelectric media, which includes forming an electrode on a substrate; forming features having a predetermined pattern on the electrode, the features...
US20110300720 Plasma treatment of substrates prior to deposition  
A plasma processing chamber particularly useful for pre-treating low-k dielectric films and refractory metal films subject to oxidation prior to deposition of other layers. A remote plasma source...
US20110275166 SYSTEMS AND METHODS FOR THIN-FILM DEPOSITION OF METAL OXIDES USING EXCITED NITROGEN-OXYGEN SPECIES  
The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer...
US20120178266 COMPOSITIONS AND METHODS OF USE FOR FORMING TITANIUM-CONTAINING THIN FILMS  
Compositions and methods for forming titanium-containing thin films are provided. The compositions comprise at least one precursor selected from the group consisting of...
US20090085082 CONTROLLED INTERMIXING OF HFO2 AND ZRO2 DIELECTRICS ENABLING HIGHER DIELECTRIC CONSTANT AND REDUCED GATE LEAKAGE  
Controlled deposition of HfO2 and ZrO2 dielectrics is generally described. In one example, a microelectronic apparatus includes a substrate and a dielectric film coupled with the substrate, the...
US20080194118 Trench Filling Method  
A trench embedding method comprising the steps of applying a composition for filling trenches which comprises a complex of an amine compound and aluminum hydride and an organic solvent to a...
US20100048032 PROCESS GAS DELIVERY FOR SEMICONDUCTOR PROCESS CHAMBER  
Methods and apparatus for a gas delivery assembly are provided herein. In some embodiments, the gas delivery assembly includes a gas inlet funnel having a first volume and one or more gas...
US20110183527 Precursor Composition, Methods of Forming a Layer, Methods of Forming a Gate Structure and Methods of Forming a Capacitor  
In a method of forming a layer, a precursor composition including a metal and a ligand chelating to the metal is stabilized by contacting the precursor composition with an electron donating...
US20140231930 Atomic Layer Deposition of Hafnium or Zirconium Alloy Films  
Provided are methods of depositing hafnium or zirconium containing metal alloy films. Certain methods comprise sequentially exposing a substrate surface to alternating flows of an organometallic...
US20110256735 ALD OF METAL SILICATE FILMS  
Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a silicon source chemical, metal source...
US20120202356 METHODS OF FORMING RUTILE TITANIUM DIOXIDE AND ASSOCIATED METHODS OF FORMING SEMICONDUCTOR STRUCTURES  
Methods of forming rutile titanium dioxide. The method comprises exposing a transition metal (such as V, Cr, W, Mn, Ru, Os, Rh, Ir, Pt, Ge, Sn, or Pb) to oxygen gas (O2) to oxidize the transition...
US20140273525 Atomic Layer Deposition of Reduced-Leakage Post-Transition Metal Oxide Films  
Metal-oxide films (e.g., aluminum oxide) with low leakage current suitable for high-k gate dielectrics are deposited by atomic layer deposition (ALD). The purge time after the metal-deposition...
US20070152252 Reducing aluminum dissolution in high pH solutions  
A method for reducing the dissolution of aluminum gate electrodes in a high pH clean chemistry comprises modifying the high pH clean chemistry to include a silanol-based chemical. The...
US20120028478 VAPOR DEPOSITION OF METAL OXIDES, SILICATES AND PHOSPHATES, AND SILICON DIOXIDE  
Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example,...
US20070059942 PLASMA CVD PROCESS FOR MANUFACTURING MULTILAYER ANTI-REFLECTION COATINGS  
A plasma chemical vapor deposition (CVD) process for the production of a multilayer anti-reflection coating on substrates (especially on substrates with curved or uneven surface) is disclosed. The...
US20090170341 PROCESS FOR FORMING DIELECTRIC FILMS  
A process for forming dielectric films containing at least metal atoms, silicon atoms, and oxygen atoms on a silicon substrate comprises a first step of oxidizing a surface portion of the silicon...
US20110027960 Methods of Forming Strontium Titanate Films  
Embodiments of the current invention include methods of forming a strontium titanate (SrTiO3) film using atomic layer deposition (ALD). More particularly, the method includes forming a plurality...
US20140273510 SILANE AND BORANE TREATMENTS FOR TITANIUM CARBIDE FILMS  
Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film comprising titanium carbide is...
US20090092856 APPARATUS FOR FEEDING SOLID FILM-FORMATION MATERIAL  
A solid film-formation material feeding apparatus includes a supercritical fluid supply source for supplying supercritical fluid; and a column which is connected to the supercritical fluid supply...
US20140242811 ATOMIC LAYER DEPOSITION METHOD  
An ALD method includes providing a substrate in an ALD reactor, performing a pre-ALD treatment to the substrate in the ALD reactor, and performing one or more ALD cycles to form a dielectric layer...
US20070111544 SYSTEMS WITH A GATE DIELECTRIC HAVING MULTIPLE LANTHANIDE OXIDE LAYERS  
Electronic systems and methods of forming the electronic systems include a gate dielectric having multiple lanthanide oxide layers. Such electronic systems may be used in a variety of electronic...
US20140322923 DIELECTRICS CONTAINING AT LEAST ONE OF A REFRACTORY METAL OR A NON-REFRACTORY METAL  
Electronic apparatus and methods of forming the electronic apparatus may include one or more insulator layers having a refractory metal and a non-refractory metal for use in a variety of...
US20110065287 PULSED CHEMICAL VAPOR DEPOSITION OF METAL-SILICON-CONTAINING FILMS  
A method is provided for forming a metal-silicon-containing film on a substrate by pulsed chemical vapor deposition. The method includes providing the substrate in a process chamber, maintaining...
US20120021612 METHODS FOR MANUFACTURING DIELECTRIC FILMS  
A method for manufacturing a dielectric film having a high dielectric constant is provided. The method is a method for forming, on a substrate, a dielectric film including a metal oxide containing...
US20150255276 ORGANOMETALLIC PRECURSORS AND METHODS OF FORMING THIN LAYERS USING THE SAME  
An organometallic precursor is represented by a chemical formula of Xn(M)(R1)m(R2)k. M is a central metal. X is a ligand of M and one of 6,6-dimethylfulvenyl, indenyl, cyclopentadienyl and...
US20120088373 METHODS OF FORMING TITANIUM SILICON OXIDE  
A dielectric containing a titanium silicon oxide film and a method of fabricating such a dielectric provide a dielectric for use in a variety of electronic devices. Embodiments may include a...
US20090004886 METHOD OF MANUFACTURING AN INSULATING FILM CONTAINING HAFNIUM  
A stacked film has an insulating film containing hafnium formed above a silicon layer and a polysilicon layer formed on the insulating film. The stacked film is heated in an atmosphere containing...
US20130302998 Adhesion Layer for Solution-Processed Transition Metal Oxides on Inert Metal Contacts  
An ammonium thio-transition metal complex is used as an adhesion promoter for immobilizing temperature-stable transition metal oxide layers on an inert metal surface. The ammonium thio-transition...
US20120270409 Methods For Manufacturing High Dielectric Constant Films  
Provided are methods for depositing a cerium doped hafnium containing high-k dielectric film on a substrate. The reagents of specific methods include hafnium tetrachloride, an organometallic...
US20080085610 ALD OF METAL SILICATE FILMS  
Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a silicon source chemical, metal source...
US20080318443 Plasma enhanced cyclic deposition method of metal silicon nitride film  
The present invention relates to a method for forming a metal silicon nitride film according to a cyclic film deposition under plasma atmosphere with a metal amide, a silicon precursor, and a...
US20090246972 METHODS FOR MANUFACTURING HIGH DIELECTRIC CONSTANT FILM  
Processes for making a high K (dielectric constant) film using an ultra-high purity hafnium containing organometallic compound are disclosed. Also described are devices incorporating high K films...

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