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US20090294776 |
Highly Oxygen-Sensitive Silicon Layer and Method for Obtaining Same
Silicon layer highly sensitive to oxygen and method for obtaining said layer. This layer ( 2 ), formed on a substrate ( 4 ) for example of SiC, has a 3'2 structure. To obtain it, it is possible to...
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US20090273061 |
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR SUBSTRATE
A double-structure silicon on insulator (SOI) substrate with a silicon layer, an insulation film (silicon oxide film), a silicon layer, and an insulation film in this order from the side of the...
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US20090239387 |
PRODUCING METHOD OF SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS
Disclosed is a producing method of a semiconductor device produced by transferring a plurality of substrates into a processing chamber, supplying oxygen-containing gas and hydrogen-containing gas...
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US20090233452 |
PRODUCING METHOD OF SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS
Disclosed is a producing method of a semiconductor device produced by transferring a plurality of substrates into a processing chamber, supplying oxygen-containing gas and hydrogen-containing gas...
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US20090186489 |
Thermal treatment apparatus, method for manufacturing semiconductor device, and method for manufacturing substrate
A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat...
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US20090179253 |
Oxide-nitride-oxide stack having multiple oxynitride layers
A semiconductor device including an oxide-nitride-oxide (ONO) structure having a multi-layer charge storing layer and methods of forming the same are provided. Generally, the method involves: (i)...
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US20090176181 |
SYSTEM AND METHOD OF IMPROVED PRESSURE CONTROL IN HORIZONTAL DIFFUSION FURNACE SCAVENGER SYSTEM FOR CONTROLLING SILICON OXIDE GROWTH
The present invention relates generally to semiconductor wafer fabrication and more particularly but not exclusively to advanced process control methodologies for controlling oxide formation using...
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US20090170341 |
PROCESS FOR FORMING DIELECTRIC FILMS
A process for forming dielectric films containing at least metal atoms, silicon atoms, and oxygen atoms on a silicon substrate comprises a first step of oxidizing a surface portion of the silicon...
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US20090170340 |
METHOD OF FORMING DIELECTRIC FILMS
A method of forming dielectric films including a metal silicate on a silicon substrate comprises a first step of oxidizing a surface layer portion of the silicon substrate and forming a silicon...
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US20090152629 |
METHODS OF SELECTIVELY OXIDIZING SEMICONDUCTOR STRUCTURES, AND STRUCTURES RESULTING THEREFROM
Methods for selectively oxidizing a semiconductor structure include generating a gas cluster ion beam comprising an oxidizing source gas, directing the gas cluster ion beam to a region of a...
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US20090137131 |
THIN FILM TRANSISTOR, METHOD OF MANUFACTURING SAME, DISPLAY DEVICE, METHOD OF MODIFYING AN OXIDE FILM, METHOD OF FORMING AN OXIDE FILM, SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE
In a manufacturing method of a thin film transistor ( 1 ), the oxide film forming step is performed whereby: a process-target substrate ( 2 ) having a surface on which a gate oxide film ( 4 )...
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US20090050898 |
Silicon carbide semiconductor device and method for producing the same
A silicon carbide semiconductor device ( 90 ), includes: 1) a silicon carbide substrate ( 1 ); 2) a gate electrode ( 7 ) made of polycrystalline silicon; and 3) an ONO insulating film ( 9 )...
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US20090042404 |
Semiconductor processing
Embodiments of the present disclosure include semiconductor processing methods and systems. One method includes forming a material layer on a semiconductor substrate by exposing a deposition...
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US20080318382 |
METHODS FOR FABRICATING TUNNELING OXIDE LAYER AND FLASH MEMORY DEVICE
A method for manufacturing a tunneling oxide layer including the following steps: forming a tunneling oxide layer on a semiconductor substrate by in-situ steam generation oxidation; performing a...
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US20080299780 |
Method and apparatus for laser oxidation and reduction
A method and apparatus using electromagnetic radiation and gas to create oxidation and reduction reactions on a device, such as a semiconductor wafer surface. In one embodiment, a scanned laser and...
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US20080280456 |
Thermal methods for cleaning post-CMP wafers
Methods for cleaning semiconductor wafers following chemical mechanical polishing are provided. An exemplary method exposes a wafer to a thermal treatment in an oxidizing environment followed by a...
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US20080200038 |
Heat processing method and apparatus for semiconductor process
A heat processing method for a semiconductor process includes placing a plurality of target substrates stacked at intervals in a vertical direction within a process field of a process container....
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US20080188089 |
METHOD FOR REDUCING TOP NOTCHING EFFECTS IN PRE-DOPED GATE STRUCTURES
A method for reducing top notching effects in pre-doped gate structures includes subjecting an etched, pre-doped gate stack structure to a re-oxidation process, the re-oxidation process comprising...
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US20080179714 |
INTEGRATED MULTIPLE GATE DIELECTRIC COMPOSITION AND THICKNESS SEMICONDUCTOR CHIP AND METHOD OF MANUFACTURING THE SAME
A method comprises forming a material over a substrate and patterning the material to remove portions of the material and expose an underlying portion of the substrate. The method further includes...
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US20080176411 |
TECHNIQUES FOR PROVIDING DECOUPLING CAPACITANCE
Techniques for electronic device fabrication are provided. In one aspect, an electronic device is provided. The electronic device comprises at least one interposer structure having one or mole vias...
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US20080176381 |
Surface roughening process
A process of forming a rough interface in a semiconductor substrate. The process includes the steps of depositing a material on a surface of the substrate, forming a zone of irregularities in the...
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US20080132083 |
Film formation apparatus for semiconductor process and method for using the same
A method is provided for using a film formation apparatus including a process container having an inner surface, which contains as a main component a material selected from the group consisting of...
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US20080132045 |
LASER-BASED PHOTO-ENHANCED TREATMENT OF DIELECTRIC, SEMICONDUCTOR AND CONDUCTIVE FILMS
A metallic, semiconductor, dielectric or oxide layer, such as a thin gate oxide, is formed by supplying a wafer in a processing chamber with thermal energy to heat the wafer and light energy, such...
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US20080102543 |
INCREASING AN ELECTRICAL RESISTANCE OF A RESISTOR BY OXIDATION
A method for increasing an electrical resistance of a resistor that is within a semiconductor structure. A fraction of a surface layer of the resistor is oxidized with oxygen particles. In an...
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US20080095678 |
Oxidation apparatus and method for semiconductor process
An oxidation apparatus for a semiconductor process includes a gas supply system configured to supply an oxidizing gas and a deoxidizing gas to the process field of a process container through a gas...
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US20080050931 |
METHOD FOR FABRICATING STRAINED SILICON-ON-INSULATOR STRUCTURES AND STRAINED SILICON-ON-INSULATOR STRUCTURES FORMED THEREBY
A silicon-on-insulator (SOI) device and structure having locally strained regions in the silicon active layer formed by increasing the thickness of underlying regions of a buried insulating layer...
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US20080050918 |
METHOD FOR PRODUCING A DEVICE COMPRISING A STRUCTURE EQUIPPED WITH ONE OR MORE MICROWIRES OR NANOWIRES BASED ON A SI AND GE COMPOUND BY GERMANIUM CONDENSATION
The disclosure relates to a method for producing a microelectronic device comprising one or more Si 1-z Ge z -based semiconductor wire(s) (with 0<z≦1), including the steps of:
a)...
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US20080032510 |
CMOS SION GATE DIELECTRIC PERFORMANCE WITH DOUBLE PLASMA NITRIDATION CONTAINING NOBLE GAS
A method of forming a layer comprising silicon and nitrogen on a substrate is provided. The layer may also include oxygen and be used as a silicon oxynitride gate dielectric layer. In one aspect,...
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US20080003783 |
METHOD OF REDUCING A ROUGHNESS OF A SEMICONDUCTOR SURFACE
A method of smoothening a surface of a semiconductor structure comprises exposing the surface of the semiconductor structure to a reactant. A chemical reaction between a material of the...
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