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US20140120731 ICP SOURCE DESIGN FOR PLASMA UNIFORMITY AND EFFICIENCY ENHANCEMENT  
An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An...
US20140220786 METHODS FOR OPTICAL PROXIMITY CORRECTION IN THE DESIGN AND FABRICATION OF INTEGRATED CIRCUITS  
A method of manufacturing an optical lithography mask includes providing a patterned layout design comprising a plurality of polygons, correcting the patterned layout design using optical...
US20110136347 POINT-OF-USE SILYLAMINE GENERATION  
The production and delivery of a reaction precursor containing one or more silylamines near a point of use is described. Silylamines may include trisilylamine (TSA) but also disilylamine (DSA) and...
US20130193575 OPTIMIZATION OF COPPER PLATING THROUGH WAFER VIA  
Systems, apparatuses, and methods related to the design, fabrication, and manufacture of gallium arsenide (GaAs) integrated circuits are disclosed. Copper can be used as the contact material for a...
US20130189848 SHIELDED LID HEATER ASSEMBLY  
A shielded lid heater lid heater suitable for use with a plasma processing chamber, a plasma processing chamber having a shielded lid heater and a method for plasma processing are provided. The...
US20130280840 VAPOR DEPOSITION DEVICE, VAPOR DEPOSITION METHOD, AND METHOD OF MANUFACTURING ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE  
A vapor deposition device (50) in accordance with the present invention is a vapor deposition device for forming a film on a film formation substrate (60), the vapor deposition device including a...
US20100048028 SURFACE TREATED ALUMINUM NITRIDE BAFFLE  
Methods and apparatus relating to aluminum nitride baffles are provided herein. In some embodiments, a baffle for use in semiconductor process chambers may include a body comprising aluminum...
US20100320609 WETTING PRETREATMENT FOR ENHANCED DAMASCENE METAL FILLING  
Disclosed are pre-wetting apparatus designs and methods. These apparatus designs and methods are used to pre-wet a wafer prior to plating a metal on the surface of the wafer. Disclosed...
US20070232074 Techniques for the synthesis of dense, high-quality diamond films using a dual seeding approach  
Embodiments of methods of forming a high thermal conductivity diamond film on a substrate using at least two different average particle sizes of diamond for nucleation and its associated structures.
US20140179114 RADICAL SOURCE DESIGN FOR REMOTE PLASMA ATOMIC LAYER DEPOSITION  
A radical source for supplying radicals during atomic layer deposition semiconductor processing operations is provided. The radical source may include a remote volume, a baffle volume, and a...
US20120289059 CHEMICAL VAPORIZER FOR MATERIAL DEPOSITION SYSTEMS AND ASSOCIATED METHODS  
System and method for operating a material deposition system are disclosed. In one embodiment, the method can include periodically injecting a precursor into a vaporizer through an injector at the...
US20110124201 CHEMICAL VAPORIZER FOR MATERIAL DEPOSITION SYSTEMS AND ASSOCIATED METHODS  
System and method for operating a material deposition system are disclosed. In one embodiment, the method can include periodically injecting a precursor into a vaporizer through an injector at the...
US20110034032 Method of formation or thermal spray coating  
A method of formation of a thermal spray coating which forms a thermal spray coating on a coating-forming surface, characterized by comprising a thermal spraying step of thermally spraying...
US20120009798 STENCIL MASK PROFILE  
An apparatus and method are provided which allow the low cost patterned deposition of material onto a workpiece. A stencil mask, having chamfered edges is applied to the surface of the workpiece....
US20150162199 AGING-BASED LEAKAGE ENERGY REDUCTION METHOD AND SYSTEM  
A technique of reducing leakage energy associated with a post-silicon target circuit is generally described herein. One example method includes purposefully aging a plurality of gates in the...
US20140329392 COATINGS FOR RELATIVELY MOVABLE SURFACES  
A device has a microelectromechanical system (MEMS) component with at least one surface and a coating disposed on at least a portion of the surface. The coating has a compound of the formula...
US20120098133 STRUCTURE AND METALLIZATION PROCESS FOR ADVANCED TECHNOLOGY NODES  
The problem of poor adherence of a dielectric coating on a patterned metal structure can be solved by forming an adhesion layer on exposed surfaces of such metal structure prior to deposition of...
US20130084459 LOW PEEL ADHESIVE  
A curable adhesive composition is disclosed comprising: at least one free radically polymerizable oligomer component; optionally at least one diluent monomer; at least one perfluorinated ether...
US20120021604 Controlling Defects in Thin Wafer Handling  
A method includes bonding a wafer on a carrier through an adhesive, and performing a thinning process on the wafer. After the step of performing the thinning process, a portion of the adhesive not...
US20140127912 PLASMA PROCESS ETCH-TO-DEPOSITION RATIO MODULATION VIA GROUND SURFACE DESIGN  
Plasma deposition in which properties of a discharge plasma are controlled by modifying the grounding path of the plasma is potentially applicable in any plasma deposition environment, but finds...
US20130109192 SUSCEPTOR WITH RING TO LIMIT BACKSIDE DEPOSITION  
A susceptor including a generally circular body having a face with a radially inward section and a radially outward section proximate a circumference of the body, the radially outward section...
US20130052834 WAFER HOLDER AND TEMPERATURE CONDITIONING ARRANGEMENT AND METHOD OF MANUFACTURING A WAFER  
A wafer holder and temperature controlling arrangement has a metal circular wafer carrier plate, which covers a heater compartment. In the heater compartment a multitude of heater lamp tubes is...
US20130244922 AZEOTROPIC COMPOSITIONS COMPRISING METHYL PERFLUOROPENTENE ETHERS FOR CLEANING APPLICATIONS  
The present disclosure provides azeotropic and azeotrope-like compositions comprised of methylperfluoropentene ethers and at least one of methanol, ethanol, 2-propanol, hexane, heptane,...
US20130115751 BORON-CONTAINING HYDROGEN SILSESQUIOXANE POLYMER, INTEGRATED CIRCUIT DEVICE FORMED USING THE SAME, AND ASSOCIATED METHODS  
A composition includes a boron-containing hydrogen silsesquioxane polymer having a structure that includes: silicon-oxygen-silicon units, and oxygen-boron-oxygen linkages in which the boron is...
US20080203589 VARIABLE FILL AND CHEESE FOR MITIGATION OF BEOL TOPOGRAPHY  
A method of designing features on a semiconductor wafer. A design of active or functional features is provided for chiplets separated by kerf areas on the wafer. The method then includes...
US20100311248 STRUCTURED LAYER DEPOSITION ON PROCESSED WAFERS USED IN MICROSYSTEM TECHNOLOGY  
The invention relates to a method and a through-vapor mask for depositing layers in a structured manner by means of a specially designed coating mask which has structures that accurately fit into...
US20110198736 REACTIVE SITE DEACTIVATION AGAINST VAPOR DEPOSITION  
Methods and structures relating to the formation of mixed SAMs for preventing undesirable growth or nucleation on exposed surfaces inside a reactor are described. A mixed SAM can be formed on...
US20100271612 METHOD AND PELLICLE MOUNTING APPARATUS FOR REDUCING PELLICLE INDUCED DISTORTION  
An apparatus for mounting a pellicle onto a mask is provided. In one embodiment, the apparatus comprises a base provided with a track; a dummy plate holder coupled to the base, the dummy plate...
US20110279979 Constructions Comprising Rutile-Type Titanium Oxide; And Methods Of Forming And Utilizing Rutile-Type Titanium Oxide  
Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less...
US20060270248 Solvent Management Methods for Gel Production  
Embodiments of the present invention describe a method for continuous manufacture of a gel material comprising the steps of: forming a gel sheet by dispensing a gel precursor mixture onto a moving...
US20120107502 Bisamineazaallylic Ligands And Their Use In Atomic Layer Deposition Methods  
Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising bisamineazaallylic ligands are provided. Also provided are bisamineazaallylic ligands...
US20090170332 PROCESSING GAS SUPPLYING SYSTEM AND PROCESSING GAS SUPPLYING METHOD  
A gas supplying system includes a processing gas supply pipe for supplying a processing gas from a gas cylinder 210 into a processing apparatus and a nonreactive gas supply source 230 for...
US20120289057 APPARATUS AND METHOD FOR MULTIPLE SYMMETRICAL DIVISIONAL GAS DISTRIBUTION  
An apparatus and method for multiple symmetrical divisional gas distribution providing a mounting plate, a plurality of manifolds coupled to the mounting plate, a center purge block coupled to the...
US20090233349 Metal Nanowires With An Oxide Sheath And Production Method For Same  
A one-dimensional composite structure which comprises at least one nanowire. The nanowire comprises a metal core and a metal oxide sheath.
US20150203352 NANO-CONSTRUCTION OF COMPLEX 3-D STRUCTURES AND MODIFICATION OF EXISTING STRUCTURES  
In one preferred aspects, methods are provided to produce a three-dimensional feature, comprising:(a) providing a nano-manipulator device; (b) positioning an article with the nano-manipulator...
US20150093908 HIGH SELECTIVITY AND LOW STRESS CARBON HARDMASK BY PULSED LOW FREQUENCY RF POWER  
Methods of forming high etch selectivity, low stress ashable hard masks using plasma enhanced chemical vapor deposition are provided. In certain embodiments, the methods involve pulsing low...
US20060175012 Semiconductor fabrication equipment and method for controlling pressure  
Provided are semiconductor fabrication equipment and a related method of controlling pressure in a process chamber associated with the equipment. Multiple connected vacuum lines, each having a...
US20050032254 Filling vias with thick film paste using contact printing  
The present invention relates to a process for filling vias in an electronic structure with thick film paste. The vias may be preexisting in a substrate comprised of thick film materials or...
US20140004709 ANTIREFLECTION STRUCTURES WITH AN EXCEPTIONAL LOW REFRACTIVE INDEX AND DEVICES CONTAINING THE SAME  
Nanoporous polymers with gyroid nanochannels can be fabricated from the self-assembly of degradable block copolymer, polystyrene-b-poly(L-lactide) (PS-PLLA), followed by the hydrolysis of PLLA...
US20100307552 METHODS FOR COATING A SUBSTRATE  
Coated substrates and methods for coating substrates, for example, a self-assembly method, disclosed herein are useful for, for example, photovoltaic cells.
US20120258602 Method for Metal Deposition Using Hydrogen Plasma  
Methods for formation and treatment of pure metal layers using CVD and ALD techniques are provided. In one or more embodiments, the method includes forming a metal precursor layer and treating the...
US20110086513 UPPER ELECTRODE BACKING MEMBER WITH PARTICLE REDUCING FEATURES  
Components of a plasma processing apparatus includes a backing member with gas passages attached to an upper electrode with gas passages. To compensate for the differences in coefficient of...
US20140000476 HYDROPHOBIC AND LIPOPHOBIC COMPOSITION COMPRISING COMPOUNDS HAVING A BISPHOSPHONIC AND THIOL GROUP  
The present invention describes the highly advantageous properties of a mixture of thiol-perfluoropolyether (PFPE) molecules with perfluorinated bisphosphonic compounds (BP-PF). This mixture in...
US20120202355 PATTERNED DUMMY WAFERS LOADING IN BATCH TYPE CVD  
A method for semiconductor device fabrication is provided. Embodiments of the present invention are directed towards using at least one patterned dummy wafer along with one or more product wafers...
US20120097973 HIGH PERFORMANCE POWER SWITCH  
In one example, we describe a new high performance AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor (MISHFET), which was fabricated using HfO2 as the surface...
US20110006400 HANDLE WAFER HAVING VIEWING WINDOWS  
The invention relates to a method for making a handle wafer (20′) for microelectronic functional wafers, including at least one transparent window (22, 24) for viewing through the thickness of the...
US20080237716 INTEGRATED CIRCUIT STRUCTURES HAVING A BORON ETCH-STOP LAYER AND METHODS, DEVICES AND SYSTEMS RELATED THERETO  
An integrated circuit structure comprising a boron etch-stop layer on a surface of the integrated circuit structure having a full-width half-maximum (FWHM) thickness value less than 100...
US20060046504 Metal oxide structure containing Titanium oxide and production method and use thereof  
A dye sensitized solar cell comprising, as the dye electrode, a titanium oxide structure having an optical band gap (hereinafter referred to as “BG”) of 2.7 to 3.1 eV as calculated from absorbance...
US20110133153 POROUS NANOSTRUCTURE AND METHOD OF MANUFACTURING THE SAME  
Provided are a porous nanostructure and a method of manufacturing the same. The porous nanostructure includes a plurality of pores disposed on an exterior surface of a nanostructure, wherein at...
US20090320571 DISPERSION AND SEPARATION OF NANOSTRUCTURED CARBON IN ORGANIC SOLVENTS  
The present invention relates to dispersions of nanostructured carbon in organic solvents containing alkyl amide compounds and/or diamide compounds. The invention also relates to methods of...