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US20050159011 Selective etching silicon nitride  
By providing a silicon containing precursor, such as methyl triethoxysilane, to a phosphoric etch bath, wafers containing nitride may be selectively etched without unduly impacting other silicon...
US20120295431 METHOD FOR ETCHING GATE STACK  
A method for etching a metal gate stack is provided. The method includes forming a gate stack on a substrate, where the gate stack includes a metal gate. A wet etch process is performed on the...
US20150255303 HARD MASK REMOVAL SCHEME  
A method for hard mask layer removal includes dispensing a chemical on a hard mask layer, in which the chemical includes an acidic chemical. The chemical is drained from a chamber after hard mask...
US20140187051 Poly Removal for replacement gate with an APM mixture  
A method for removing poly-silicon dummy gate structures using an ammonium hydroxide-hydrogen peroxide-water (APM) solution with concentrations between 1:10:20 and 1:1:2 and at temperatures...
US20050274696 Single-acid compensating system  
A single-acid compensating system (20) includes an etching unit (201), and a monitoring and compensating unit (202). The etching unit includes an acid-mixing tank (212). The monitoring and...
US20090017636 TITANIUM NITRIDE-STRIPPING LIQUID, AND METHOD FOR STRIPPING TITANIUM NITRIDE COATING FILM  
A titanium nitride-stripping liquid for stripping a titanium nitride coating film, the titanium nitride-stripping liquid being capable of stripping a titanium nitride coating film even in a...
US20120052687 ENHANCED STRIPPING OF IMPLANTED RESISTS  
A benign all-wet process for stripping photoresist after an implantation process performed to fabricate a device is provided. A method of stripping implanted resist includes a first step of...
US20060166510 Semiconductor manufacturing method for die bonding  
The present invention has a pump system having a gear pump to which a gear structure, having a pump gear and a driving gear concentrically and integrally formed with each other, is incorporated; a...
US20100213554 GATE STRUCTURE AND METHOD FOR TRIMMING SPACERS  
A gate structure includes a gate disposed on a substrate, a first spacer disposed on the substrate and surrounding the gate and a second spacer disposed on the first spacer and surrounding the...
US20050263488 Etching system and method for treating the etching solution thereof  
The present etching system includes a processing tank with an etching solution containing silicon, a cooling tank, a pre-heating tank, a first pipe for transferring the etching solution from the...
US20110159636 EDGE DELETION OF THIN-LAYER SOLAR MODULES BY ETCHING  
The present invention relates to a fast and inexpensive method which can be carried out locally for the wet-chemical edge deletion of “solar modules” by applying etching pastes which are suitable...
US20120034787 Defect Etching of Germanium  
The present invention provides an etching solution for revealing defects in a germanium layer, a method for revealing defects in a germanium layer using such an etching solution and to a method...
US20140256124 IN-SITU METAL GATE RECESS PROCESS FOR SELF-ALIGNED CONTACT APPLICATION  
A method of producing a metal gate structure. The method includes forming a gate structure above a semiconductor substrate and performing one or more chemical metal planarization (CMP) processes...
US20080102642 METHOD OF SEASONING IDLE SILICON NITRIDE ETCHER AND METHOD OF ACTIVATING  
A method of seasoning an idle silicon nitride etcher is described. A buffer material having stronger adhesion to an internal wall of the chamber of the silicon nitride etcher than silicon nitride...
US20050263483 Modifying the viscosity of etchants  
Semiconductor integrated circuit structures, such as stacks containing metal layers, may be etched with a modified viscosity etchant. An increased viscosity etchant, for example, may reduce...
US20080268651 Catch-cup to diverter alignment leveling jig  
An apparatus for leveling and centering a catch-cup chamber to a diverter chamber of a semiconductor processing chamber is described. In one embodiment, the apparatus has a frame with branches. A...
US20120135558 METHOD OF ETCHING ASYMMETRIC WAFER, SOLAR CELL INCLUDING THE ASYMMETRICALLY ETCHED WAFER, AND METHOD OF MANUFACTURING THE SAME  
With the present invention, two wafers for a solar cell only whose light receiving surfaces are selectively etched can be simultaneously obtained by overlapping the two wafers and performing a...
US20110104900 Alkaline Rinse Agents For Use In Lithographic Patterning  
Lithographic patterning methods involve the formation of a (one or more) metal oxide capping layer, which is rinsed with an aqueous alkaline solution as part of the method. The rinse solution does...
US20150024606 METHOD AND SYSTEM FOR THINNING WAFER THEREOF  
Embodiments of a method for thinning a wafer are provided. The method includes placing a wafer on a support assembly and securing an etching mask to a backside of the wafer. The etching mask...
US20130122715 Etching Agent for Type II InAs/GaInSb Superlattice Epitaxial Materials  
This disclosure involves a formula, mixing procedure, etching technique and application of an etchant for revealing defects in T2SL's grown lattice matched to (100) GaSb. The etching agent...
US20050101151 Laminate for IR ablation  
The present invention provides a laminate for IR ablation comprising at least a substrate and an IR ablation layer, wherein the aforementioned IR ablation layer comprises an IR absorbent metal...
US20050112903 Process for removing tungsten particles after tungsten etch-back  
A new and improved process which is effective in removing tungsten residues from a tungsten plug structure after a tungsten etchback process is carried out on the structure. The tungsten plug...
US20120190209 METHOD FOR PRODUCING AND STRUCTURING A ZINC OXIDE LAYER AND ZINC OXIDE LAYER  
Disclosed is a method for producing ZnO contact layers for solar cells. The layers are etched using hydrofluoric acid so as to generate a texture.
US20150040983 ACIDIC ETCHING PROCESS FOR SI WAFERS  
The present invention relates to a method for acidic surface etching of a silicon wafer, such as those used for solar cells, comprising contacting at least one surface of a silicon wafer as cut...
US20060144822 Apparatus and method for wet-etching  
A wet-etching apparatus (20) includes a first etching chamber (213), a second etching chamber (215), and a cleaning chamber (214) located between the first and second etching chambers. The...
US20100294352 METAL PATTERNING FOR ELECTRICALLY CONDUCTIVE STRUCTURES BASED ON ALLOY FORMATION  
Layered metal structures are patterned to form a surface with some locations having an alloy along the top surface at some locations and the original top metal layer at other locations along the...
US20100048027 Smooth and vertical semiconductor fin structure  
A method for processing a semiconductor fin structure is disclosed. The method includes thermal annealing a fin structure in an ambient containing an isotope of hydrogen. Following the thermal...
US20130334667 Alkaline Etching Liquid for Texturing a Silicon Wafer Surface  
An etching liquid for texturing a silicon wafer surface is provided. The etching liquid may include an aqueous solution of at least one alkaline etching agent and at least one polysaccharide or...
US20120112321 ALKALINE ETCHING LIQUID FOR TEXTURING A SILICON WAFER SURFACE  
An etching liquid for texturing a silicon wafer surface is provided. The etching liquid may include an aqueous solution of at least one alkaline etching agent and at least one polysaccharide or...
US20070141850 Wet Treatment of Hafnium Containing Materials  
A semiconductor product includes an exposed Hafnium-containing layer. The Hafnium-containing layer is treated with a solution that includes a low ionic strength organic substance.
US20120214306 METHOD FOR OBTAINING EXTREME SELECTIVITY OF METAL NITRIDES AND METAL OXIDES  
Methods for etching metal nitrides and metal oxides include using ultradilute HF solutions and buffered, low-pH HF solutions containing a minimal amount of the hydrofluoric acid species H2F2. The...
US20060051951 Method of clearing electrical contact pads in thin film sealed OLED devices  
A process of cleaning wire bond pads associated with OLED devices, including the steps of depositing on the wire bond pads one or more layers of ablatable material, and ablating the one or more...
US20100047947 Semiconductor light-emitting element, fabrication method thereof, convex part formed on backing, and convex part formation method for backing  
A convex part formation method of forming a convex part in parallel with a <110> direction of a backing on the backing having a {100} face as the top surface thereof, includes: (a) forming a mask...
US20070207623 Method for flattening glass substrate  
A method for flattening a glass substrate includes the steps of preparing plural kinds of etching liquids different from one another in an etching rate, preparing the glass substrate, and etching...
US20050074981 Increasing the etch resistance of photoresists  
Materials may be utilized as photoresists which have relatively plasma poor etch resistance. Examples include acrylates and fluorinated polymers, which have very good transparency but poor etch...
US20130171830 METHOD FOR REMOVING GERMANIUM SUBOXIDE  
A method for removing germanium suboxide between a germanium (Ge) substrate and a dielectric layer made of metal oxide includes causing a supercritical fluid composition that includes a...
US20090093123 Spin head, chuck pin used in the spin head, and method for treating a substrate with the spin head  
Provided is a spin head for supporting a substrate. The spin head includes a rotatable body, and chuck pins protruding upward from the body and configured to support an edge of a substrate placed...
US20110027933 METHOD OF TEXTURING SOLAR CELL AND METHOD OF MANUFACTURING SOLAR CELL  
Methods of texturing and manufacturing a solar cell are provided. The method of texturing the solar includes texturing a surface of a substrate of the solar cell using a wet etchant, and the wet...
US20050130437 Dry film remove pre-filter system  
In accordance with the objectives of the invention a new method and apparatus is provided for the removal of by-products resulting from a dry-film removal process. The conventional method and...
US20060226122 Selective wet etching of metal nitrides  
In one embodiment, the present invention relates to a wet etching composition including hydrogen peroxide; an organic onium hydroxide; and an acid. In another embodiment, the invention relates to...
US20100068889 PARTICLE-CONTAINING ETCHING PASTES FOR SILICON SURFACES AND LAYERS  
The present invention relates to particle-containing etching media in the form of etching pastes which are suitable for the full-area or selective etching of extremely fine lines or structures in...
US20100116316 TRUNCATED PYRAMID STRUCTURES FOR SEE-THROUGH SOLAR CELLS  
The present disclosure presents a partially-transparent (see-through) three-dimensional thin film solar cell (3-D TFSC) substrate. The substrate includes a plurality of unit cells. Each unit cell...
US20140315331 Screening of Surface Passivation Processes for Germanium Channels  
Candidate wet processes for native oxide removal from, and passivation of, germanium surfaces can be screened by high-productivity combinatorial variation of different process parameters on...
US20070254401 Method of processing a surface of group III nitride crystal and group III nitride crystal substrate  
There is provided a method of processing a surface of a group III nitride crystal, that includes the steps of: polishing a surface of a group III nitride crystal with a polishing slurry containing...
US20120153260 CHEMICALLY-ETCHED NANOSTRUCTURES AND RELATED DEVICES  
A method of etching active quantum nanostructures provides the step of laterally etching of an intermediate active quantum nanostructure layer interposed between cladding layers. The lateral...
US20110021032 Etching of AlGaInAsSb  
The present invention relates to a wet acid etchant for wet acid etching of intrinsic, n-doped or p-doped Al1-x-zGaxInzAs1-ySby with 0
US20120276748 METHODS FOR ETCHING DOPED OXIDES IN THE MANUFACTURE OF MICROFEATURE DEVICES  
Methods for selectively etching doped oxides in the manufacture of microfeature devices are disclosed herein. An embodiment of one such method for etching material on a microfeature workpiece...
US20080318434 SYSTEMS AND METHODS FOR OSCILLATING EXPOSURE OF A SEMICONDUCTOR WORKPIECE TO MULTIPLE CHEMISTRIES  
Systems and methods for oscillating exposure of a semiconductor workpiece to multiple chemistries are disclosed. A method in accordance with one embodiment includes sequentially exposing a portion...
US20150162207 METHOD OF USING SEPARATE WAFER CONTACTS DURING WAFER PROCESSING  
Embodiments of the invention are directed towards improving on-wafer process performance and processing at increased processing fluid/wafer temperature while maintaining good process performance....
US20060091355 Solution and method for removing ashing residue in Cu/low-k multilevel interconnection structure  
The present invention relates to a removing solution for removing ashing residue formed by dry etching and/or ashing on a Cu/low-k multilevel interconnection structure, wherein the removing...

Matches 1 - 50 out of 357 1 2 3 4 5 6 7 8 >