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US20120108067 Edge Bead Remover For Coatings  
The invention relates to an edge bead remover composition for an organic film disposed on a substrate surface, comprising an organic solvent and at least one polymer having a contact angle with...
US20120083124 Method of Patterning NAND Strings Using Perpendicular SRAF  
A lithography mask includes a plurality of patterning features formed on a mask substrate and a first plurality of sub-resolution assist features (SRAFs) formed substantially perpendicular to the...
US20100330790 TECHNIQUE FOR EXPOSING A PLACEHOLDER MATERIAL IN A REPLACEMENT GATE APPROACH BY MODIFYING A REMOVAL RATE OF STRESSED DIELECTRIC OVERLAYERS  
In a replacement gate approach, the sacrificial gate material is exposed on the basis of enhanced process uniformity, for instance during a wet chemical etch step or a CMP process, by forming a...
US20130095662 INTEGRATED CIRCUIT METHOD WITH TRIPLE PATTERNING  
The present disclosure provides one embodiment of an integrated circuit (IC) design method. The method includes receiving an IC design layout having a plurality of IC features. The method includes...
US20120190203 METHOD AND APPARATUS FOR ANGULAR HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION  
Forming a shallow trench capacitor in conjunction with an FET by forming a plurality of STI trenches; for the FET, implanting a first cell well having a first polarity between a first and a second...
US20120094478 RESIST FEATURE AND REMOVABLE SPACER PITCH DOUBLING PATTERNING METHOD FOR PILLAR STRUCTURES  
A method of making a semiconductor device includes forming a layer over a substrate, forming a plurality of spaced apart features of imagable material over the layer, forming sidewall spacers on...
US20120100719 METHOD FOR MAKING A PLANAR MEMBRANE  
A method for determining a minimum tension compensation stress which will have a membrane of a thickness of less than or equal to one micrometer, secured to a frame, having, in the absence of any...
US20130099260 RESIST STRIPPING COMPOSITION AND METHOD OF STRIPPING RESIST USING THE SAME  
Disclosed herein is a resist stripping composition, which has an excellent ability of stripping a residual resist remaining after dry or wet etching at the tune of forming patterns in a process of...
US20120223418 SOLUTION PROCESSIBLE HARDMASKS FOR HIGH RESOLUTION LITHOGRAPHY  
Solution processible hardmasks are described that can be formed from aqueous precursor solutions comprising polyoxometal clusters and anions, such as polyatomic anions. The solution processible...
US20130307578 TAMPER RESISTANT IC  
According to an aspect of the invention an integrated circuit is conceived which comprises a physical unclonable function which is at least partially implemented in a passivation layer of said...
US20140199844 ARRAY DESCRIPTION SYSTEM FOR LARGE PATTERNS  
A method for describing an array of elements includes the steps of providing an array description system that includes a library of possible alternative designations; and describing the array of...
US20090061631 GATE REPLACEMENT WITH TOP OXIDE REGROWTH FOR THE TOP OXIDE IMPROVEMENT  
Methods of replacing/reforming a top oxide around a charge storage element of a memory cell and methods of improving quality of a top oxide around a charge storage element of a memory cell are...
US20090090974 DUAL STRESS LINER STRUCTURE HAVING SUBSTANTIALLY PLANAR INTERFACE BETWEEN LINERS AND RELATED METHOD  
A dual stress liner structure having a substantially planar interface between liners and a related method are disclosed. In one embodiment, a dual stress liner structure may include a tensile...
US20110001198 MEMS DEVICE AND INTERPOSER AND METHOD FOR INTEGRATING MEMS DEVICE AND INTERPOSER  
A method for producing Microelectromechanical Systems (MEMS) and related devices using Silicon-On-Insulator (SOI) wafer includes providing an SOI wafer, performing a mesa etch to at least partially...
US20080214007 METHOD FOR REMOVING DIAMOND LIKE CARBON RESIDUE FROM A DEPOSITION/ETCH CHAMBER USING A PLASMA CLEAN  
Provided is a method for removing diamond like carbon residue from a deposition chamber. This method, in one embodiment, may include subjecting a deposition chamber including diamond like carbon...
US20120034783 MANUFACTURING INTEGRATED CIRCUIT COMPONENTS HAVING MULTIPLE GATE OXIDATIONS  
STI divot formation is minimized and STI field height mismatch between different regions is eliminated. A nitride cover layer (150) having a thickness less than 150 then a oxide cover layer (160)...
US20090116675 MEMS DIAPHRAGM STRUCTURE AND METHOD FOR FORMING THE SAME  
A diaphragm (14) is formed using MEMS technology. The diaphragm (14) has a hinge structure, and at least one of a hinge upper corner portion and a hinge lower corner portion of the diaphragm (14)...
US20120098133 STRUCTURE AND METALLIZATION PROCESS FOR ADVANCED TECHNOLOGY NODES  
The problem of poor adherence of a dielectric coating on a patterned metal structure can be solved by forming an adhesion layer on exposed surfaces of such metal structure prior to deposition of...
US20140141615 METHOD OF FORMING PATTERNED FILM ON A BOTTOM AND A TOP-SURFACE OF A DEEP TRENCH  
A method of forming a patterned film on both a bottom and a top-surface of a deep trench is disclosed. The method includes the steps of: 1) providing a substrate having a deep trench formed...
US20110018054 Method for Preventing Gate Oxide Damage of a Trench MOSFET during Wafer Processing while Adding an ESD Protection Module Atop  
A method and device structure are disclosed for preventing gate oxide damage of a trench MOSFET during wafer processing while adding an ESD protection module atop the trench MOSFET. The ESD...
US20100297848 ETCHING OF TUNGSTEN SELECTIVE TO TITANIUM NITRIDE  
The present invention in one embodiment provides an etch method that includes providing a structure including a tungsten (W) portion and a titanium nitride (TiN) portion; applying a first etch feed...
US20110104900 Alkaline Rinse Agents For Use In Lithographic Patterning  
Lithographic patterning methods involve the formation of a (one or more) metal oxide capping layer, which is rinsed with an aqueous alkaline solution as part of the method. The rinse solution does...
US20130052827 SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH SILICON AND OXYGEN  
A method of suppressing the etch rate for exposed silicon-and-oxygen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. Examples of...
US20130040412 METHOD OF FORMING SILICON NANOWIRES AND METHOD OF FABRICATING LITHIUM SECONDARY BATTERY USING THE SAME  
A method of preparing a silicon nanowire and a method of fabricating a lithium secondary battery including the silicon nanowire are provided. The method of preparing a silicon nanowire may include...
US20140054753 NANO-MESHED STRUCTURE PATTERN ON SAPPHIRE SUBSTRATE BY METAL SELF-ARRANGEMENT  
The present disclosure provides a nano-meshed patterned substrate and a method of forming the same. In an embodiment, a metal layer is formed on a substrate, and a heat treatment is performed on...
US20090108306 UNIFORM RECESS OF A MATERIAL IN A TRENCH INDEPENDENT OF INCOMING TOPOGRAPHY  
Columnar elements which extend to varying heights above a major surface of a substrate, e.g., polysilicon studs within trenches in the substrate, are recessed to a uniform depth below the major...
US20090170324 Reducing adherence in a MEMS device  
In one embodiment, an apparatus for reducing adherence in a micro-electromechanical system (MEMS) device comprises a substrate. A MEMS is disposed outwardly from the substrate. The MEMS comprises...
US20060134917 Reduction of etch mask feature critical dimensions  
A method for forming features in an etch layer in an etch stack with an etch mask over the etch layer, wherein the etch mask has etch mask features with sidewalls, where the etch mask features have...
US20110151668 PITCH DIVISION PATTERNING TECHNIQUES  
Embodiments of the invention comprise pitch division techniques to extend the capabilities of lithographic techniques beyond their minimum pitch. The pitch division techniques described herein...
US20130049158 FORMATION OF METAL NANOSPHERES AND MICROSPHERES  
Hemispheres and spheres are formed and employed for a plurality of applications. Hemispheres are employed to form a substrate having an upper surface and a lower surface. The upper surface includes...
US20090149025 Remover Compositions  
A remover composition containing 1,3-propanediamine (a), 1-hydroxyethylidene-1,1-diphosphonic acid (b) and water, wherein the remover composition contains the component (a) in an amount of from 0.2...
US20120238096 METHOD AND APPARATUS FOR INSPECTING A REFLECTIVE LITHOGRAPHIC MASK BLANK AND IMPROVING MASK QUALITY  
An EUV integrated circuit fabrication method and system EUV that includes blank inspection, defect characterization, simulation, pattern compensation, modification of the mask writer database,...
US20090273035 METHOD FOR SELECTIVELY REMOVING A SPACER IN A DUAL STRESS LINER APPROACH  
By integrating a spacer removal process into the sequence for patterning a first stress-inducing material during a dual stress liner approach, the sidewall spacer structure for one type of...
US20130059440 SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH SILICON AND NITROGEN  
A method of suppressing the etch rate for exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. The etch...
US20130017682 Overburden Removal For Pore Fill Integration Approach  
In one exemplary embodiment of the invention, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a...
US20110097904 METHOD FOR REPAIRING LOW-K DIELECTRIC DAMAGE  
A method for repairing damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A...
US20110183520 Method for Removing Copper Oxide Layer  
The invention is directed to a method for removing copper oxide from a copper surface to provide a clean copper surface, wherein the method involves exposing the copper surface containing copper...
US20120289049 COPPER OXIDE REMOVAL TECHNIQUES  
A method for the removal of copper oxide from a copper and dielectric containing structure of a semiconductor chip is provided. The copper and dielectric containing structure may be planarized by...
US20100001255 SELECTIVE NANOTUBE FORMATION AND RELATED DEVICES  
Nanotube electronic devices exhibit selective affinity to disparate nanotube types. According to an example embodiment, a semiconductor device exhibits a treated substrate that selectively...
US20100297847 Method of forming sub-lithographic features using directed self-assembly of polymers  
Methods involving the self-assembly of block copolymers are described herein, in which by beginning with openings (in one or more substrates) that have a targeted CD (critical dimension), holes are...
US20100207249 WAFER INCLUDING A REINFORCING FLANGE FORMED UPRIGHT AT A PERIPHERY AND METHOD FOR MANUFACTURING THE SAME  
A wafer with an orientation notch being cut in a portion of its circumference, the wafer includes: a reinforcing flange formed upright at periphery; and a thin section surrounded by the reinforcing...
US20130005147 METHOD OF REDUCING CRITICAL DIMENSION PROCESS BIAS DIFFERENCES BETWEEN NARROW AND WIDE DAMASCENE WIRES  
A method including forming an organic polymer layer (OPL) on a substrate; forming a patterned photoresist layer having a first opening and a second opening over the OPL, the second opening wider...
US20140117488 PATTERN DECOMPOSITION LITHOGRAPHY TECHNIQUES  
Techniques are disclosed for realizing a two-dimensional target lithography feature/pattern by decomposing (splitting) it into multiple unidirectional target features that, when aggregated,...
US20080311752 Pore Sealing and Cleaning Porous Low Dielectric Constant Structures  
A micellar solution is used to seal pores exposed at the bottom and sidewall surfaces of a structure etched in or through a porous low dielectric constant material. The micellar solution is also...
US20130052826 High Aspect Ratio Grid for Phase Contrast X-ray Imaging and Method of Making the Same  
Semiconductor substrates with high aspect ratio recesses formed therein are described. The high aspect ratio recesses have bottom surface profile characteristics that promote formation of initial...
US20140127906 SPUTTER AND SURFACE MODIFICATION ETCH PROCESSING FOR METAL PATTERNING IN INTEGRATED CIRCUITS  
Fabricating conductive lines in an integrated circuit includes providing a conductive metal in a multi-layer structure, performing a first sputter etch of the conductive metal using methanol...
US20090317938 ADJUSTMENT OF MASKS BY RE-FLOW  
As a step in performing a process on a structure, a hole pattern is provided in a thin layer of organic resin masking material formed over the structure to provide a process mask. A processing step...
US20130302988 ETCHING METHOD USING AN AT LEAST SEMI-SOLID MEDIA  
An etching method that uses an etch reactant retained within at least a semi-solid media (120, 220, 224, 230). The etch reactant media is applied to selectively etch a surface layer (106, 218,...
US20110281433 ETCHING METHOD USING AN AT LEAST SEMI-SOLID MEDIA  
An etching method that uses an etch reactant retained within at least a semi-solid media (120, 220, 224, 230). The etch reactant media is applied to selectively etch a surface layer (106, 218,...
US20140134843 Methanofullerenes  
The present disclosure relates to novel methanofullerene derivatives, negative-type photoresist compositions prepared therefrom and methods of using them. The derivatives, their photoresist...