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US20120264303 CHEMICAL MECHANICAL POLISHING SLURRY, SYSTEM AND METHOD  
A metal polishing slurry includes a chemical solution and abrasives characterized by a bimodal or other multimodal distribution of particle sizes or a prevalence of two or more particle sizes or...
US20150017454 CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A PROTEIN  
Chemical mechanical polishing composition is provided. The composition comprises (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a protein, and (C) an aqueous...
US20130045598 Method for chemical mechanical polishing tungsten  
A method for chemical mechanical polishing of a substrate comprising tungsten using a nonselective chemical mechanical polishing composition.
US20120094490 Slurry For Chemical Mechanical Polishing  
The present invention relates to a slurry for chemical mechanical polishing, comprising an abrasive; an oxidant; an organic acid; and a polymeric additive comprising polyolefin-polyalkyleneoxide...
US20110250754 Polishing Composition and Polishing Method  
A polishing composition contains a polishing accelerator, a water-soluble polymer including a constitutional unit originating from a polymerizable compound having a guanidine structure such as...
US20120315764 METHOD OF POLISHING COPPER WIRING SURFACES IN ULTRA LARGE SCALE INTEGRATED CIRCUITS  
A method of polishing copper wiring surfaces of in ultra large scale integrated circuit, the method including: a) preparing a polishing solution including between 35 and 80 w. % of a nano SiO2...
US20150132956 Chemical Mechanical Polishing Slurry Compositions and Method Using the Same for Copper and Through-Silicon Via Applications  
Provided are novel chemical mechanical polishing (CMP) slurry compositions for polishing copper substrates and method of using the CMP compositions. The CMP slurry compositions deliver superior...
US20150004788 Chemical Mechanical Polishing Slurry Compositions and Method Using the Same for Copper and Through-Silicon Via Applications  
Provided are novel chemical mechanical polishing (CMP) slurry compositions for polishing copper substrates and method of using the CMP compositions. The CMP slurry compositions deliver superior...
US20130189843 SLURRY FOR PLANARIZING PHOTORESIST  
A slurry for planarization of a photoresist includes abrasive particles, an oxidizer, a surface activation chemical, and a solvent.
US20110171832 Chemical-Mechanical Polishing Formulation and Methods of Use  
The invention is directed to a chemical-mechanical polishing formulation that includes: an abrasive particulate component; iodic acid; and water. The invention is also directed to a method for...
US20120270401 CHEMICAL MECHANICAL POLISHING SLURRY, ITS PREPARATION METHOD AND USE FOR THE SAME  
A chemical mechanical polishing slurry for polishing a copper layer without excessively or destructively polishing a barrier layer beneath the copper layer is disclosed and includes an acid, a...
US20150159047 POLISHING COMPOSITION AND POLISHING METHOD  
A polishing composition contains cerium oxide particles, at least one selected from a methonium compound and an alkanolamine compound which is a primary or secondary alkanolamine compound, and a...
US20120282775 Chemical Mechanical Polishing Slurry Compositions and Polishing Method Using the Same  
Disclosed herein is a CMP slurry composition. The CMP slurry composition includes cerium oxide particles, an adsorbent for adsorbing the cerium oxide particles to a polishing pad, an adsorption...
US20110070737 METHOD FOR PREPARING OF CERIUM OXIDE POWDER FOR CHEMICAL MECHANICAL POLISHING AND METHOD FOR PREPARING OF CHEMICAL MECHANICAL POLISHING SLURRY USING THE SAME  
The present invention relates to a method of preparing a cerium oxide powder for a CMP slurry and a method of preparing a CMP slurry using the same, and more particularly, to a method of preparing...
US20110117740 METHOD FOR POLISHING HETEROSTRUCTURES  
A polishing method for a heterostructure of at least one relaxed superficial heteroepitaxial layer on a substrate made of a different material. The method includes a first chemical mechanical...
US20110081780 AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING AND CHEMICAL MECHANICAL POLISHING METHOD  
A chemical mechanical polishing aqueous dispersion includes (A) silica particles, and (B1) an organic acid, the number of silanol groups included in the silica particles (A) calculated from a...
US20120276742 Chemical Mechanical Polishing Composition and Method For Polishing Germanium-Antimony-Tellurium Alloys  
A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy (GST) using a chemical mechanical polishing composition...
US20130217231 CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION  
A chemical mechanical polishing (CMP) composition Abstract Use of a chemical mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a mixture thereof, (B)...
US20110250755 METHOD OF POLISHING WAFER SURFACE ON WHICH COPPER AND SILICON ARE EXPOSED  
A method of the present invention includes polishing a wafer having an exposed copper or copper alloy surface and an exposed silicon surface by using a polishing composition containing 0.02 to...
US20150159048 POLISHING COMPOSITION AND POLISHING METHOD  
A polishing composition contains cerium oxide particles of 50 nm or more to 160 nm or less in average secondary particle diameter and at least one kind of nitride film polishing accelerating agent...
US20150104941 BARRIER CHEMICAL MECHANICAL PLANARIZATION COMPOSITION AND METHOD THEREOF  
A barrier chemical mechanical planarization polishing composition is provided that includes suitable chemical additives. The suitable chemical additives are organic polymer molecules containing...
US20150104940 BARRIER CHEMICAL MECHANICAL PLANARIZATION COMPOSITION AND METHOD THEREOF  
A barrier chemical mechanical planarization polishing composition is provided that includes the suitable chemical additives. The suitable chemical additives are organic polymer molecules...
US20130045599 Method for chemical mechanical polishing copper  
A method for chemical mechanical polishing of a copper substrate, is provided, comprising: providing a copper substrate; providing slurry composition comprising, as initial components: water; 0.1...
US20130005149 CHEMICAL-MECHANICAL PLANARIZATION OF SUBSTRATES CONTAINING COPPER, RUTHENIUM, AND TANTALUM LAYERS  
A chemical-mechanical polishing composition comprising: (a) at least one type of abrasive particles; (b) at least two oxidizing agents; (c) at least one pH adjusting agent; and (d) deionized...
US20110312181 METHOD FOR CHEMICAL MECHANICAL PLANARIZATION OF A COPPER-CONTAINING SUBSTRATE  
A method using an associated composition for chemical mechanical planarization of a copper-containing substrate affords high copper removal rates and low dishing values during CMP processing of...
US20120003834 Method Of Polishing Chalcogenide Alloy  
The invention provides a method for chemical mechanical polishing of a substrate. The invention comprises providing a substrate, wherein the substrate comprises a chalcogenide phase change alloy...
US20140342562 POLISHING COMPOSITION  
A polishing composition of the present invention is to be used for polishing an object including a portion containing a high-mobility material and a portion containing a silicon material. The...
US20110269312 CHEMICAL MECHANICAL POLISHING (CMP) POLISHING SOLUTION WITH ENHANCED PERFORMANCE  
This invention relates to a chemical composition for chemical mechanical polishing (CMP) of substrates that are widely used in the semiconductor industry. The inventive chemical composition...
US20150247063 Chemical Mechanical Polishing (CMP) Composition for Shallow Trench Isolation (STI) Applications and Methods of Making Thereof  
Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical...
US20140342561 POLISHING COMPOSITION  
A polishing composition of the present invention is to be used for polishing an object including a portion containing a group III-V compound material. The polishing composition contains abrasive...
US20110250756 AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING, CHEMICAL MECHANICAL POLISHING METHOD, KIT FOR CHEMICAL MECHANICAL POLISHING, AND KIT FOR PREPARING AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING  
A chemical mechanical polishing aqueous dispersion comprises (A) abrasive grains, (B) at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, (C) an organic acid other than...
US20130244431 SLURRY, POLISHING LIQUID SET, POLISHING LIQUID, METHOD FOR POLISHING SUBSTRATE, AND SUBSTRATE  
The polishing liquid according to the embodiment comprises abrasive grains, an additive and water, wherein the abrasive grains satisfy either or both of the following conditions (a) and (b). (a)...
US20130143404 SLURRY, POLISHING LIQUID SET, POLISHING LIQUID, METHOD FOR POLISHING SUBSTRATE, AND SUBSTRATE  
The polishing liquid according to the embodiment comprises abrasive grains, an additive and water, wherein the abrasive grains satisfy either or both of the following conditions (a) and (b). (a)...
US20130130501 SLURRY, POLISHING LIQUID SET, POLISHING LIQUID, METHOD FOR POLISHING SUBSTRATE, AND SUBSTRATE  
The polishing liquid according to the embodiment comprises abrasive grains, an additive and water, wherein the abrasive grains satisfy either or both of the following conditions (a) and (b). (a)...
US20120315763 POLISHING LIQUID FOR CMP AND POLISHING METHOD USING THE SAME  
An object of the present invention is to provide a polishing liquid for CMP with which polishing scratches can be reduced and a sufficiently high polishing rate can be obtained in a CMP step for...
US20150147884 SLURRY FOR CHEMICAL MECHANICAL POLISHING AND CHEMICAL MECHANICAL POLISHING METHOD  
The present invention provides a slurry for chemical mechanical polishing, containing abrasive grain (a), compound (b) having an amino group having a pKa of more than 9, and not less than 3...
US20140213057 CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A GLYCOSIDE  
A chemical mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a glycoside of the formulae 1 to 6 wherein R1 is...
US20110136344 COMPOSITION AND METHOD FOR POLISHING POLYSILICON  
The invention provides a polishing composition comprising silica, an aminophosphonic acid, a polysaccharide, a tetraalkylammonium salt, a bicarbonate salt, an azole ring, and water, wherein the...
US20110306211 Stabilized Chemical Mechanical Polishing Composition And Method Of Polishing A Substrate  
A chemical mechanical polishing composition, comprising, as initial components: water; 0.1 to 40 wt % abrasive having an average particle size of 5 to 150 nm; 0.001 to 1 wt % of an adamarityl...
US20120264302 CHEMICAL MECHANICAL POLISHING PROCESS  
A chemical mechanical polishing (CMP) process includes steps of providing a substrate, performing a first polishing step to the substrate with an acidic slurry, and performing a second polishing...
US20130224955 METHOD FOR POLISHING ALUMINUM/COPPER AND TITANIUM IN DAMASCENE STRUCTURES  
The invention provides compositions and methods for planarizing or polishing a substrate. The composition comprises an abrasive consisting of alumina particles optionally treated with a polymer,...
US20150079788 LOW DEFECT CHEMICAL MECHANICAL POLISHING COMPOSITION  
A low defect chemical mechanical polishing composition for polishing silicon oxide containing substrates is provided comprising, as initial components: water, a colloidal silica abrasive; and, an...
US20150132958 CONTACT RELEASE CAPSULE USEFUL FOR CHEMICAL MECHANICAL PLANARIZATION SLURRY  
The invention relates to a contact release capsule comprising a particle, a chemical payload, and a polymer coating, wherein the particle is impregnated with the chemical payload, and the chemical...
US20130280910 CONTACT RELEASE CAPSULE USEFUL FOR CHEMICAL MECHANICAL PLANARIZATION SLURRY  
The invention relates to a contact release capsule comprising a particle, a chemical payload, and a polymer coating, wherein the particle is impregnated with the chemical payload, and the chemical...
US20100029080 AQUEOUS CERIUM OXIDE DISPERSION  
Aqueous cerium oxide dispersion Aqueous cerium oxide dispersion, containing 5 to 60% by weight cerium oxide. It can be used to polish SiO2 in the semiconductor industry.
US20140011361 CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A NON-IONIC SURFACTANT AND A CARBONATE SALT  
A chemical mechanical polishing (CMP) composition (Q) comprising (A) Inorganic particles, organic particles, or a mixture or composite thereof, wherein the particles are cocoon-shaped(B) a...
US20120058642 Silicon polishing compositions with high rate and low defectivity  
The invention relates to a chemical-mechanical polishing composition comprising silica, one or more organic carboxylic acids or salts thereof, one or more polysaccharides, one or more bases,...
US20150093900 CHEMICAL MECHANICAL POLISHING COMPOSITION FOR POLISHING SILICON WAFERS AND RELATED METHODS  
A chemical mechanical polishing composition for polishing silicon wafers is provided, containing: water, optionally, an abrasive; a cation according to formula (I); piperazine or a piperazine...
US20110244685 Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal  
A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises silicon oxide; providing a chemical mechanical polishing...
US20110070736 Method for polishing through-silicon via (TSV) wafers and a polishing composition used in the method  
A method for polishing Through-Silicon Via (TSV) wafers is provided. The method comprises a step of subjecting the surface of a TSV wafer to a polishing treatment with a polishing composition...

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