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US20120083121 Fabrication of Replacement Metal Gate Devices  
Methods for polishing multiple dielectric layers to form replacement metal gate structures include a first chemical mechanical polish step to remove overburden and planarize a top layer to leave a...
US20130084702 ACRYLATE POLYURETHANE CHEMICAL MECHANICAL POLISHING LAYER  
A chemical mechanical polishing pad comprising an acrylate polyurethane polishing layer, wherein the polishing layer exhibits a tensile modulus of 65 to 500 MPa; an elongation to break of 50 to...
US20130078811 SLURRY FOR CHEMICAL-MECHANICAL POLISHING OF METALS AND USE THEREOF  
A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol and a diluent. The composition further includes abrasive particles and an...
US20150004787 Sapphire Pad Conditioner  
A sapphire pad conditioner includes a sapphire substrate having multiple protrusions on a surface and a holder arranged to hold the sapphire substrate. The sapphire substrate is used for...
US20120094488 CHEMICAL MECHANICAL POLISHING PROCESS  
A chemical mechanical polishing process includes placing a substrate on a first polishing pad of a first platen, wherein the substrate has a bulk metal layer and a barrier layer; polishing the...
US20130178064 POLISHING SLURRY AND CHEMICAL MECHANICAL PLANARIZATION METHOD USING THE SAME  
A polishing slurry for a chemical mechanical planarization process includes polishing particles and polyhedral nanoscale particles having a smaller size than the polishing particles and including...
US20130171823 CMP Slurry Composition and Polishing Method Using the Same  
A CMP slurry composition includes metal oxide particles, a diisocyanate compound, and deionized water. The CMP slurry composition is capable of selectively controlling polishing speed of a wafer...
US20120295442 Chemical mechanical polishing pad having a low defect window  
A chemical mechanical polishing pad having a polishing layer with an integral window and a polishing surface adapted for polishing a substrate selected from a magnetic substrate, an optical...
US20120080755 Methods for Forming Gates in Gate-Last Processes and Gate Areas formed by the Same  
Methods are provided for forming gates in gate-last processes. The methods may include performing chemical mechanical polishing (CMP) on an interlayer dielectric (ILD) that is on a plurality of...
US20120270400 SLURRY FOR CHEMICAL MECHANICAL POLISHING AND POLISHING METHOD FOR SUBSTRATE USING SAME  
The present invention provides a slurry for chemical mechanical polishing comprising water-soluble clathrate compound (a), polymer compound (b) having an acidic group optionally in a salt form as...
US20130280909 METAL CUT PROCESS FLOW  
A method for optimizing masks used for forming conductive features and a method for creating the mask features on an IC device are disclosed. An exemplary embodiment includes receiving a design...
US20130189842 CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A SPECIFIC HETEROPOLYACID  
A chemical mechanical polishing (CMP) composition comprising a specific heteropolyacid Abstract A chemical-mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic...
US20100330790 TECHNIQUE FOR EXPOSING A PLACEHOLDER MATERIAL IN A REPLACEMENT GATE APPROACH BY MODIFYING A REMOVAL RATE OF STRESSED DIELECTRIC OVERLAYERS  
In a replacement gate approach, the sacrificial gate material is exposed on the basis of enhanced process uniformity, for instance during a wet chemical etch step or a CMP process, by forming a...
US20110097874 PROGRESSIVE TRIMMING METHOD  
The invention provides a method of trimming a structure that includes a first wafer bonded to a second wafer, with the first wafer having a chamfered edge. The method includes a first trimming...
US20140322913 POLISHING COMPOSITION  
A polishing composition of the present invention is to be used for polishing an object including a portion containing a high-mobility material and a portion containing a silicon material. The...
US20120264302 CHEMICAL MECHANICAL POLISHING PROCESS  
A chemical mechanical polishing (CMP) process includes steps of providing a substrate, performing a first polishing step to the substrate with an acidic slurry, and performing a second polishing...
US20130302984 POLISHING COMPOSITION, POLISHING METHOD USING SAME, AND SUBSTRATE PRODUCTION METHOD  
Provided is a polishing composition characterized by: including at least one of either organic acid or organic salt and including a composition (A) including hydroxyethyl cellulose, ammonia,...
US20120190199 SILICON POLISHING COMPOSITIONS WITH IMPROVED PSD PERFORMANCE  
The invention relates to a chemical-mechanical polishing composition comprising silica, one or more tetraalkylammonium salts, one or more bicarbonate salts, one or more alkali metal hydroxides,...
US20110130003 METHOD AND APPARATUS FOR CONFORMABLE POLISHING  
Methods and apparatus provide for a conformable polishing head for uniformly polishing a workpiece. The polishing head includes an elastic polishing pad mounted on an elastic membrane that seals a...
US20120270399 SLURRY COMPOSITION FOR CMP, AND POLISHING METHOD  
The present invention relates to a CMP slurry composition comprising an abrasive particle; a dispersant; an ionic polymer additive; and a non-ionic polymer additive including a...
US20130203254 POLISHING COMPOSITION AND POLISHING METHOD  
A polishing composition contains a water-soluble polymer, a polishing accelerator, and an oxidizing agent. The water-soluble polymer is a polyamide-polyamine polymer having an amine value of 150...
US20130109180 METHOD FOR POLISHING SILICON WAFER, AND POLISHING SOLUTION FOR USE IN THE METHOD  
A to-be-polished surface of a silicon wafer is rough polished while supplying to a hard polishing cloth a polishing solution in which a water-soluble polymer has been added to an alkaline aqueous...
US20140120724 COMPOSITE CONDITIONER AND ASSOCIATED METHODS  
CMP pad dressers having leveled tips and associated methods are provided. In one aspect, for example, a composite conditioner can include a base plate and a plurality of polishing units secured to...
US20110143539 POLISHING PAD WITH ENDPOINT WINDOW AND SYSTEMS AND METHODS USING THE SAME  
A polishing pad including a path therethrough to transmit a signal for in situ monitoring of an endpoint in a polishing operation. In one embodiment, the polishing pad includes a polishing...
US20110294294 PROTECTIVE COATING FOR PLANARIZATION  
Various pattern transfer and etching steps can be used to create features. Conventional photolithography steps can be used in combination with pitch-reduction techniques to form superimposed,...
US20130137263 ELECTRICALLY ASSISTED CHEMICAL-MECHANICAL PLANARIZATION (EACMP) SYSTEM AND METHOD THEREOF  
A novel polishing pad is described. The polishing pad includes a base plate, a main polishing body, a plurality of metal bottom portions, a positive electrode conductive wire and a negative...
US20150132955 POLISHING COMPOSITION, POLISHING METHOD USING SAME, AND METHOD FOR PRODUCING SUBSTRATE  
A polishing composition of the present invention contains a water-soluble polymer and abrasive grains. The water-soluble polymer is an anionic compound having an acid dissociation constant pKa of...
US20050148183 Polishing pad, platen hole cover, polishing apparatus, polishing method, and method for fabricating semiconductor device  
It is an object of the present invention to provide a windowed polishing pad or a platen hole cover which is used to form planar surfaces in glass, semiconductors, dielectric/metal composites,...
US20110165777 Method and Slurry for Tuning Low-K Versus Copper Removal Rates During Chemical Mechanical Polishing  
A composition and associated method for the chemical mechanical planarization (CMP) of metal substrates on semiconductor wafers are described. The composition contains a nonionic fluorocarbon...
US20140057438 POLISHING METHOD OF NON-OXIDE SINGLE-CRYSTAL SUBSTRATE  
There is provided a polishing method for polishing a non-oxide single-crystal substrate such as a silicon carbide single-crystal substrate at a high polishing rate to obtain a high-quality surface...
US20130095660 METHOD FOR POLISHING SILICON WAFER  
To final polish a finish-polished surface using a final polishing solution whose chief component is a weakly basic aqueous solution that does not contain abrasive grains. During the final...
US20070232068 Slurry for touch-up CMP and method of manufacturing semiconductor device  
A slurry for touch-up CMP is provided, which includes water, colloidal silica having an average primary particle diameter of 5 to 60 nm, unsintered cerium oxide having an average primary particle...
US20130183826 COMPOSITION FOR POLISHING AND COMPOSITION FOR RINSING  
A polishing composition for a silicon wafer and a rinsing composition for a silicon wafer according to the present invention contain a nonionic surfactant of a polyoxyethylene adduct. The HLB...
US20150064903 METHODS FOR FABRICATING INTEGRATED CIRCUITS USING CHEMICAL MECHANICAL PLANARIZATION TO RECESS METAL  
Methods for fabricating integrated circuits using chemical mechanical planarization (CMP) for recessing metal are provided. In an embodiment, a method for fabricating an integrated circuit...
US20130122613 Localized CMP to Improve Wafer Planarization  
To provide improved planarization, techniques in accordance with this disclosure include a CMP station that utilizes localized planarization on a wafer. This localized planarization, which is...
US20070163998 Composition for polishing semiconductor layers  
The aqueous polishing composition is useful for polishing semiconductor substrates. The polishing composition includes 0.05 to 50 weight percent abrasive; and 0.001 to 2 weight percent lambda type...
US20050159004 System for reducing corrosion effects of metallic semiconductor structures  
The present invention defines a system for impeding corrosive egress from a metallic trench structure (206) during the production of a semiconductor device segment (200). The system of the present...
US20110244684 POLISHING LIQUID AND POLISHING METHOD  
Provided is a polishing liquid which is used for chemical mechanical polishing of a body to be polished having a layer containing polysilicon or a modified polysilicon, and using which the...
US20080138988 DETECTION OF CLEARANCE OF POLYSILICON RESIDUE  
During polishing of a substrate, polysilicon can be removed from a surface of the substrate. Detecting an endpoint during polishing of polysilicon can include polishing the substrate having a...
US20150184028 POLISHING SLURRY AND SUBSTRATE POLISHING METHOD USING THE SAME  
A polishing slurry for tungsten and a substrate polishing method are disclosed. The polishing slurry includes an abrasive for performing polishing and having positive zeta potential, and a...
US20100184291 AQUEOUS SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING AND CHEMICAL MECHANICAL POLISHING METHOD  
The present invention relates to an aqueous slurry composition for chemical mechanical polishing that can show good polishing rate to the target layer, and yet has a high polishing selectivity and...
US20140302675 Nanogap in-between noble metals  
A nanogap of controlled width in-between noble metals is produced using sidewall techniques and chemical-mechanical-polishing. Electrical connections are provided to enable current measurements...
US20140097539 TECHNIQUE FOR UNIFORM CMP  
Pitch-dependent dishing and erosion following CMP treatment of copper features is quantitatively assessed by atomic force microscopy (AFM) and transmission electron microscopy (TEM). A new...
US20140024216 GST CMP SLURRIES  
The present invention provides chemical-mechanical polishing (CMP) compositions suitable for polishing a substrate comprising a germanium-antimony-tellurium (GST) alloy. The CMP compositions of...
US20110244683 Fabricating Voids Using Slurry Protect Coat Before Chemical-Mechanical Polishing  
A semiconductor structure is fabricated with a void such as a line, contact, via or zia. To prevent slurry particles from falling into and remaining in a void during a chemical-mechanical...
US20070184661 Multi-component barrier polishing solution  
The polishing solution is useful for removing barrier materials in the presence of at least one nonferrous interconnect metal with limited erosion of dielectrics. The solution contains 0 to 20...
US20130102153 METHOD AND COMPOSITION FOR CHEMICAL MECHANICAL PLANARIZATION OF A METAL OR A METAL ALLOY  
A composition and associated method for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) are described herein which afford high and tunable rates of...
US20140148008 MULTI-POINT CHEMICAL MECHANICAL POLISHING END POINT DETECTION SYSTEM AND METHOD OF USING  
A wafer polishing system including a platen configured to rotate in a first direction, and a polishing head configured to hold a wafer, the polishing head configured to rotate in a second...
US20090137120 DAMPING POLYURETHANE CMP PADS WITH MICROFILLERS  
A system for preparing a microcellular polyurethane material, includes a froth, prepared, for instance, by inert gas frothing a urethane prepolymer, preferably an aliphatic isocyanate polyether...
US20120021604 Controlling Defects in Thin Wafer Handling  
A method includes bonding a wafer on a carrier through an adhesive, and performing a thinning process on the wafer. After the step of performing the thinning process, a portion of the adhesive not...