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US20140061912 Patterned Graphene Structures on Silicon Carbide  
In a method for making graphitic ribbons in a face of a carbide crystal (110), in which an elongated trench (120) is formed along a predetermined path in the face (112) of the carbide crystal...
US20070128844 Non-polar (a1,b,in,ga)n quantum wells  
A method of fabricating non-polar a-plane GaN/(Al,B,In,Ga)N multiple quantum wells (MQWs). The a-plane MQWs are grown on the appropriate GaN/sapphire template layers via metalorganic chemical...
US20090045414 SILICON CARBIDE SEMICONDUCTOR ELEMENT, METHOD OF MANUFACTURING THE SAME, AND SILICON CARBIDE DEVICE  
A silicon carbide semiconductor element and a manufacturing method thereof are disclosed in which a low contact resistance is attained between an electrode film and a wiring conductor element, and...
US20120238090 PRODUCTION METHOD FOR THICK FILM METAL ELECTRODE AND PRODUCTION METHOD FOR THICK FILM RESIST  
One object of the present invention is to provide a method for producing a thick film metal electrode that is able to form a positive-negative reverse type resist, which has a thickness of 7 μm or...
US20050104072 Localized annealing of metal-silicon carbide ohmic contacts and devices so formed  
A contact for a semiconductor device can be formed by forming a metal on a Silicon Carbide (SiC) substrate and annealing an interface location of the metal and the SiC substrate to form a...
US20140051241 METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE  
A surface of a silicon carbide substrate on which a graphite layer is formed is covered with a metal layer which can form carbide. Then, the silicon carbide substrate is annealed to cause reaction...
US20150093890 COBALT METAL PRECURSORS  
A metal precursor and a method comprising decomposing a metal precursor on an integrated circuit device; and forming a metal from the metal precursor, wherein the metal precursor is selected from...
US20100163936 Structure and Method for Fabrication of Field Effect Transistor Gates With or Without Field Plates  
A method for fabrication of a field effect transistor gate, with or without field plates, includes the steps of defining a relatively thin Schottky metal layer by a lithography/metal liftoff or...
US20080247226 Memory devices having electrodes comprising nanowires, systems including same and methods of forming same  
Memory devices having memory cells comprising variable resistance material include an electrode comprising a single nanowire. Various methods may be used to form such memory devices, and such...
US20150132939 METHOD FOR DEPOSITING METAL LAYERS ON GERMANIUM-CONTAINING FILMS USING METAL CHLORIDE PRECURSORS  
A method is provided for forming a semiconductor device. According to one embodiment, the method includes providing a substrate having a Ge-containing film thereon, identifying a first plasma...
US20150155366 Techniques to Form Uniform and Stable Silicide  
In one aspect, a method of fabricating a metal silicide includes the following steps. A semiconductor material selected from the group consisting of silicon and silicon germanium is provided. A...
US20150064898 FABRICATION METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE  
A first metal layer (3) is formed on a back face of a silicon carbide substrate (1) to a degree such that the first metal layer (3) does not fully cover the back face of the silicon carbide...
US20060234486 Wafer separation technique for the fabrication of free-standing (Al,In,Ga)N wafers  
A method of fabricating free-standing (Al, In, Ga)N substrates, by in situ separation of thick epitaxially grown nitride films from their foreign substrates. A suitable substrate for (Al, In, Ga)N...
US20050184299 Nitride semiconductor device and method for manufacturing a nitride semiconductor substrate, and method for manufacturing a nitride semiconductor device  
A nitride semiconductor device having a substrate electrode establishing an excellent ohmic contact with a nitride semiconductor substrate is provided. The nitride semiconductor device includes a...
US20130143398 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE  
A method for manufacturing a MOSFET includes the steps of: preparing a substrate made of silicon carbide; forming a drain electrode making ohmic contact with the substrate; and forming a backside...
US20120132927 OHMIC ELECTRODE AND METHOD OF FORMING THE SAME  
An ohmic electrode for a p-type SiC semiconductor, and a method of forming the ohmic electrode. The ohmic electrode has an ohmic electrode layer, which has an amorphous structure and which is made...
US20080070399 Process for forming low defect density heterojunctions  
A method for forming a low defect density heterojunction between a first and a second compound, the first and second compounds each includes a group III element combined with a group V element in...
US20090258463 METHODS OF FABRICATING DIFFERENT THICKNESS SILICON-GERMANIUM LAYERS ON SEMICONDUCTOR INTEGRATED CIRCUIT DEVICES AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICES FABRICATED THEREBY  
Methods of fabricating semiconductor integrated circuit devices are provided. A substrate is provided with gate patterns formed on first and second regions. Spaces between gate patterns on the...
US20100059791 SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME  
A semiconductor device, which reduces the earth inductance, and a fabrication method for the same is provided. The semiconductor device and the fabrication method for the same including: a gate...
US20090072244 METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE, AND SILICON CARBIDE SEMICONDUCTOR DEVICE  
The object is to provide a method for the fabrication of a semiconductor device having undergone an anneal treatment for the purpose of forming such ohmic contact as enables decrease of ohmic...
US20110233560 Electrode for silicon carbide, silicon carbide semiconductor element, silicon carbide semiconductor device and method for forming electrode for silicon carbide  
An electrode for silicon carbide includes a silicide region which is provided in contact with a surface of a silicon carbide (SiC) layer and a carbide region which is provided on the silicide...
US20080311736 METHODS OF FORMING OHMIC LAYERS THROUGH ABLATION CAPPING LAYERS  
A method of forming an ohmic layer for a semiconductor device includes forming a metal layer on a Silicon Carbide (SiC) layer and forming an ablation capping layer on the metal layer. Laser light...
US20070072404 Phase-change optical disk  
A phase-change optical disk includes a layer structure including a ZnS—SiO2 first dielectric layer, an oxynitride second dielectric layer including SiHfON, a ZnS—SiO2 third dielectric layer, a GeN...
US20140061674 SiC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
In some aspects of the invention, a layer containing titanium and nickel is formed on an SiC substrate. A nickel silicide layer containing titanium carbide can be formed by heating. A carbon layer...
US20150024586 METHOD FOR PRODUCING A MONOCRYSTALLINE METAL/SEMICONDUCTOR COMPOUND  
In the method for producing a monocrystalline metal-semiconductor compound on the surface of a semiconducting functional layer, initially a supply layer comprising the metal is applied to the...
US20080026231 Method for Metallizing the Pre-Passivated Surface of a Semiconductor Material Obtained by Said Method  
Method for metallizing the pre-passivated surface of a semiconductor material and material obtained by said method. According to the invention, which is applied in particular in microelectronics,...
US20070082427 Method for manufacturing a compound semiconductor device having an improved via hole  
In a method for manufacturing a compound semiconductor device, a principal surface of a SiC wafer, on which a compound semiconductor device is located, is bonded to a support substrate with an...
US20130072010 NITRIDE SEMICONDUCTOR DEVICE  
A nitride semiconductor device includes a silicon substrate, a nitride semiconductor layer formed on the silicon substrate, and metal electrodes formed in contact with the silicon substrate. The...
US20150194313 FABRICATION METHOD OF SILICON CARBIDE SEMICONDUCTOR APPARATUS  
An ohmic electrode (6) of a silicon carbide semiconductor apparatus is fabricated by forming an ohmic metal film on a silicon carbide substrate (1) by sputtering a target including a mixture or an...
US20090286393 METHOD OF FORMING AN ELECTRONIC DEVICE USING A SEPARATION TECHNIQUE  
A method of forming an electronic device can include forming a patterned layer adjacent to a side of a substrate including a semiconductor material. The method can also include separating a...
US20090236611 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MAKING THE SAME  
A silicon carbide semiconductor device provided as a semiconductor chip includes a substrate, a drift layer on the substrate, an insulation film on the drift layer, a semiconductor element formed...
US20100244049 Silicon carbide semiconductor device with schottky barrier diode and method of manufacturing the same  
A silicon carbide semiconductor device with a Schottky barrier diode includes a first conductivity type silicon carbide substrate, a first conductivity type silicon carbide drift layer on a first...
US20100163929 COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF  
A compound semiconductor device includes a carrier transit layer formed over a substrate; a carrier supply layer formed over the carrier transit layer; a first metal film and a second metal film...
US20100102332 METHOD OF FORMING AN OHMIC CONTACT ON A P-TYPE 4H-SIC SUBSTRATE  
A method of forming an Ohmic contact on a P-type 4H—SiC and an Ohmic contact formed by the same are provided. A method of forming an Ohmic contact on a P-type 4H—SiC substrate including a...
US20100102331 OHMIC ELECTRODE FOR SIC SEMICONDUCTOR, METHOD OF MANUFACTURING OHMIC ELECTRODE FOR SIC SEMICONDUCTOR, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE  
An ohmic electrode for SiC semiconductor that contains Si and Ni or an ohmic electrode for SiC semiconductor that further contains Au or Pt in addition to Si and Ni is provided. In addition, a...
US20090233435 SEMICONDUCTOR DEVICES AND MANUFACTURING METHOD THEREOF  
A method is set forth of forming an ohmic electrode having good characteristics on a SiC semiconductor layer. In the method, a Ti-layer and an Al-layer are formed on a surface of the SiC...
US20080296627 Nitride semiconductor device and method of manufacturing the same  
In the nitride semiconductor device using the silicon substrate, the metal electrode formed on the silicon substrate has both ohmic contact property and adhesion, so that the nitride semiconductor...
US20070148948 Image forming system, image forming apparatus and device, and recording medium  
An image forming system including a first image forming apparatus and a second image forming apparatus that are connected to each other via a network, the first image forming apparatus,...
US20170162390 Forming a Contact Layer on a Semiconductor Body  
Disclosed is a method. The method includes forming a metal layer on a first surface of a semiconductor body; irradiating the metal layer with particles to move metal atoms from the metal layer...
US20170076948 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE  
A method for manufacturing a semiconductor device includes: forming a first major electrode on a first major surface of a semiconductor substrate; forming a second major electrode on a second...
US20170018429 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE  
There are prepared a semiconductor substrate having a first main surface and a second main surface, and an adhesive tape having a third main surface and a fourth main surface, the first main...
US20160372370 METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE  
An insulating layer is formed on a substrate made of silicon carbide. By performing etching using a mask layer formed on the insulating layer, a contact hole is formed in the insulating layer to...
US20160307756 METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE  
A method of manufacturing a silicon carbide semiconductor device having a contact formed between a p-type silicon carbide semiconductor body and a metal electrode, includes forming on a surface of...
US20160233087 MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR APPARATUS  
In a surface of a SiC semiconductor portion, a surface electrode film including a first electrode film composed of nickel and a second electrode film composed of nickel, silicon, and tantalum, are...
US20160197149 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME  
A first electrode being in contact with the first main surface of the silicon carbide semiconductor substrate and in ohmic junction with the silicon carbide semiconductor substrate is formed. At...
US20160181376 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SILICON CARBIDE SEMICONDUCTOR DEVICE  
An infrared ray absorbing film is selectively formed on a surface of a silicon carbide semiconductor substrate in a predetermined area. An aluminum film and a nickel film are sequentially formed...
US20160181372 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME  
A silicon carbide layer includes a drift region, a body region and a source region. The drift region constitutes a first main surface and has a first conductivity type. The body region is provided...
US20160155640 MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE  
A method of manufacturing a silicon carbide semiconductor device includes grinding a back surface of a semiconductor substrate formed of silicon carbide to reduce thickness thereof and provide an...
US20160087061 SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE  
A titanium layer and a nickel layer are sequentially formed on a back surface of a SiC wafer. Next, by high-temperature heat treatment, the SiC wafer is heated and the titanium layer and the...
US20160087036 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
A semiconductor device according to an embodiment includes a SiC layer, an electrode electrically connected to the SiC layer and an impurity region provided between the SiC layer and the...

Matches 1 - 50 out of 68 1 2 >