Matches 401 - 438 out of 438 < 1 2 3 4 5 6 7 8 9


Match Document Document Title
US20120112269 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
A technology is a semiconductor device and a method of manufacturing the same, capable of reducing capacitance with a storage node contact plug while maintaining a height and resistance of a bit...
US20120098052 Minimizing disturbs in dense non volatile memory arrays  
A nitride read only memory (NROM) array includes a silicon substrate having trenches therein, a plurality of polysilicon bit lines deposited in the trenches and connecting columns of memory cells,...
US20120088349 METHODS OF FABRICATING FIN STRUCTURES  
There is provided fin methods for fabricating fin structures. More specifically, fin structures are formed in a substrate. The fin structures may include two fins separated by a channel, wherein...
US20120068256 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE  
An dielectric film is formed above the semiconductor substrate. A first conductive layer is formed in the dielectric film and extending in a first direction. The first conductive layer is...
US20120061750 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
A semiconductor device and a method for manufacturing the same are disclosed. A recess gate structure is formed between an overlapping region between a gate and a source/drain so as to suppress...
US20120058629 METHODS OF MANUFACTURING VERTICAL SEMICONDUCTOR DEVICES  
Methods of manufacturing vertical semiconductor devices may include forming a mold structure including sacrificial layers and insulating interlayers with a first opening formed therethrough. The...
US20120025299 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH BURIED GATES  
A method for fabricating a semiconductor device includes forming an insulation layer, hydroxylating a surface of the insulation layer by performing a pre-treatment, forming an adhesive layer over...
US20120018796 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME  
According to one embodiment, a nonvolatile semiconductor memory device includes first and second stacked structures, first and second semiconductor pillars, first and second memory units, and a...
US20110309435 BURIED GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
A semiconductor device includes a buried gate in a semiconductor substrate, and a nitride layer, over at least the buried gate, whose upper portion is at substantially the same height as an upper...
US20110298044 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE  
The semiconductor device according to the present invention includes a semiconductor layer, a trench formed by digging the semiconductor layer from the surface thereof, a gate insulating film...
US20110291186 Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts  
This invention discloses semiconductor power device that includes a plurality of top electrical terminals disposed near a top surface of a semiconductor substrate. Each and every one of the top...
US20110281428 METHOD OF FABRICATING SEMICONDUCTOR DEVICE  
A method of fabricating a semiconductor device in which a plurality of conductive lines having a fine pitch and a uniform thickness can be formed is provided. The method includes forming a...
US20110275209 VERTICAL FIELD EFFECT TRANSISTOR ARRAYS AND METHODS FOR FABRICATION THEREOF  
Vertical field effect transistor semiconductor structures and methods for fabrication of the vertical field effect transistor semiconductor structures provide an array of semiconductor pillars....
US20110254083 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME  
A semiconductor device including a buried gate and a method for forming the same are disclosed. The semiconductor device includes a buffer layer formed on a surface of a trench in a semiconductor...
US20110244673 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH BURIED GATES  
A method for fabricating a semiconductor device includes: forming a thin film over trenches by using a first source gas and a first reaction gas; performing a first post-treatment on the thin film...
US20110244638 SEMICONDUCTOR DEVICE MANUFACTURING METHOD  
A semiconductor device manufacturing method is a method of forming a semiconductor device that includes a cell part that includes plural transistor cells in each of which a gate of a trench type...
US20110233661 SEMICONDUCTOR MEMORY DEVICE WITH FIN  
According to one embodiment, a semiconductor memory device includes a fin-shaped active area, a gate electrode, a silicide layer, and a contact. The fin-shaped active area is provided in a...
US20110233645 MANUFACTURING METHOD OF NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND NONVOLATILE SEMICONDUCTOR STORAGE DEVICE  
According to one embodiment, a manufacturing method of a nonvolatile semiconductor storage device, includes: forming a plurality of structures above a semiconductor substrate, each of the...
US20110189845 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE  
A method of manufacturing a semiconductor device in which a stress can be effectively applied from a semiconductor layer having a different lattice constant from a semiconductor substrate to a...
US20110180868 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
The present invention relates to a semiconductor device and a method for manufacturing the same. According to the present invention, a method of manufacturing a semiconductor device includes:...
US20110165768 Semiconductor Device Having a Modified Recess Channel Gate and a Method for Fabricating the Same  
A semiconductor device having a modified recess channel gate includes active regions defined by a device isolation layer and arranged at regular intervals on a semiconductor substrate, each active...
US20110165746 Novel Profile of Flash Memory Cells  
A semiconductor structure includes a semiconductor substrate; a tunneling layer on the semiconductor substrate; a source region adjacent the tunneling layer; and a floating gate on the tunneling...
US20110159679 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE  
A method for manufacturing a semiconductor device is provided. A semiconductor substrate is etched to form a trench, a gate electrode is buried in the trench, an etch-back process thereon is...
US20110159664 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH BURIED GATES  
A method for fabricating a semiconductor device includes sequentially stacking a pad oxide layer and a hard mask layer over a substrate, forming a device isolation layer over the substrate,...
US20110151656 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME  
A method of forming a semiconductor device, the method including the following processes. A groove is formed in a semiconductor substrate. A gate electrode is formed in the groove. A...
US20110147817 SEMICONDUCTOR COMPONENT HAVING AN OXIDE LAYER  
Semiconductor component having an oxide layer. One embodiment includes a first semiconductor region and a second semiconductor region. An oxide layer is arranged between the first and second...
US20110143528 Devices with Cavity-Defined Gates and Methods of Making the Same  
Disclosed are methods, systems and devices, including a method that includes the acts of forming a semiconductor fin, forming a sacrificial material adjacent the semiconductor fin, covering the...
US20110104862 METHOD OF FORMING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE  
A method of forming a semiconductor device includes the following processes. A first semiconductor structure is formed, which extends upwardly in a direction perpendicular to a main surface from a...
US20110101450 SEMICONDUCTOR DEVICE WITH BURIED GATES AND BURIED BIT LINES AND METHOD FOR FABRICATING THE SAME  
A semiconductor device includes: a plurality of first trenches formed inside a plurality of active regions; a plurality of buried gates configured to partially fill insides of the plurality of the...
US20110097886 SEMICONDUCTOR DEVICE WITH MUSHROOM ELECTRODE AND MANUFACTURE METHOD THEREOF  
A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a...
US20110095337 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
A semiconductor device reduces the on-resistance and, at the same time, raises the breakdown voltage. The drain electrode 20 of the semiconductor device runs through cap layer 13 and electron...
US20110081757 MEMORY HAVING A VERTICAL ACCESS DEVICE  
Semiconductor memory devices having vertical access devices are disclosed. In some embodiments, a method of forming the device includes providing a recess in a semiconductor substrate that...
US20110065270 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF FABRICATING THE SAME  
A method of forming a semiconductor memory device includes stacking a plurality of alternating first insulating layers and first sacrificial layers on a substrate to form a first multilayer...
US20110057251 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME  
A nonvolatile semiconductor memory device includes a first region having a plurality of electrically rewritable memory cells disposed therein, and a second region adjacent to the first region. The...
US20110042731 STRUCTURE AND METHOD OF FORMING ENHANCED ARRAY DEVICE ISOLATION FOR IMPLANTED PLATE EDRAM  
A method for forming a memory device in a semiconductor on insulator substrate is provided, in which a protective oxide that is present on the sidewalls of the trench protects the first...
US20100330775 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH BURIED GATE  
A method for fabricating a semiconductor device with a buried gate includes: etching a substrate to form a plurality of trenches; forming a plurality of buried gates that fill lower portions of...
US20100327337 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME  
A semiconductor memory device has an asymmetric buried gate structure with a stepped top surface and a method for fabricating the same. The method for fabricating the semiconductor memory device...
US20100317158 Method for Forming Nanotube Semiconductor Devices  
A method for forming a semiconductor device includes forming a nanotube region using a thin epitaxial layer formed on the sidewall of a trench in the semiconductor body. The thin epitaxial layer...

Matches 401 - 438 out of 438 < 1 2 3 4 5 6 7 8 9