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US20140106554 Methods of Forming Gated Devices  
Some embodiments include methods of forming gated devices. An upper region of a semiconductor material is patterned into a plurality of walls that extend primarily along a first direction. The...
US20140084364 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE  
A semiconductor device according to one embodiment includes a semiconductor substrate, a back-gate layer formed above the semiconductor substrate, and a stacked body formed above the back-gate...
US20140084357 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME  
A semiconductor device is provided. The semiconductor includes a plurality of interlayer insulating layers and a plurality of gate electrodes alternately stacked in a first direction on a...
US20140073125 METHOD OF MANUFACTURING FOR SEMICONDUCTOR DEVICE USING EXPANDABLE MATERIAL  
A semiconductor device is manufactured using an expandable material. The method includes forming a first gate insulating layer on a substrate, forming first and second gate structures on the first...
US20140063935 SEMICONDUCTOR MEMORY DEVICE HAVING VERTICAL CHANNELS, MEMORY SYSTEM HAVING THE SAME, AND METHOD OF FABRICATING THE SAME  
A semiconductor memory device, a memory system having the same, and a method of fabricating the same are provided. The semiconductor memory device includes a vertical channel layer protruding from...
US20140061780 SEMICONDUCTOR DEVICE INCLUDING A GATE DIELECTRIC LAYER  
A semiconductor device is fabricated by, inter alia, forming a sacrificial liner on an active portion of a semiconductor substrate, oxidizing the sacrificial liner to transform the sacrificial...
US20140054697 SEMICONDUCTOR DEVICE WITH FIELD ELECTRODE AND METHOD  
A semiconductor device with a field electrode and method. One embodiment provides a controllable semiconductor device including a control electrode for controlling the semiconductor device and a...
US20140048870 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME  
A semiconductor device includes a trench defined by etching a semiconductor substrate including a device isolation film and an active region, an active region protruded from a side and bottom of...
US20140030883 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME  
A semiconductor device comprises: a semiconductor substrate including an active region defined as a device isolation film; a bit line hole disposed over the top portion of the semiconductor...
US20140030882 MANUFACTURING METHOD OF MULTI-TRENCH TERMINATION STRUCTURE FOR SEMICONDUCTOR DEVICE  
A multi-trench termination structure for semiconductor device is disclosed, where the semiconductor device includes a semiconductor substrate and an active structure region. The multi-trench...
US20130334594 RECESSED GATE MEMORY APPARATUSES AND METHODS  
Some embodiments include a memory device and a method of forming the memory device. One such memory device includes a string of stacked memory cells. Each of the memory cells in the string...
US20130320436 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME  
A semiconductor device includes a substrate including an active region, an insulation layer formed over the substrate, a plurality of openings formed in the insulation layer, a plurality of...
US20130316524 TRANSISTOR OF SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
Provided are a transistor of a semiconductor device and a method for manufacturing the same. A gate induced drain leakage (GIDL) current is reduced by decreasing a work function at an upper...
US20130313576 SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME  
A semiconductor power device of the present invention includes a first electrode and a second electrode, a breakdown voltage holding layer that is made of a semiconductor having a predetermined...
US20130306982 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME  
A semiconductor device according to an embodiment of the present invention includes: a semiconductor layer 2 of a wide band gap semiconductor arranged on a principal surface of a substrate 1; a...
US20130302976 METHOD OF FORMING SEMICONDUCTOR DEVICE  
A method of forming a semiconductor device is provided. A first interfacial material layer is formed by a deposition process on a substrate. A dummy gate material layer is formed on the first...
US20130295758 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE  
A method of manufacturing a semiconductor device comprises forming an interlayer insulating film on a semiconductor substrate, the interlayer insulating film including a trench, forming a work...
US20130248993 Stress-Reduced Field-Effect Semiconductor Device and Method for Forming Therefor  
A field-effect semiconductor device is provided. The field-effect semiconductor device includes a semiconductor body with a first surface defining a vertical direction. In a vertical cross-section...
US20130248982 SEMICONDUCTOR DEVICE WITH ENHANCED MOBILITY AND METHOD  
In one embodiment, a vertical insulated-gate field effect transistor includes a feature embedded within a control electrode. The feature is placed within the control electrode to induce stress...
US20130244413 Method for Fabricating a Semiconductor Device Having a Saddle Fin Transistor  
A method for fabricating a semiconductor device includes forming a pad nitride layer that exposes an isolation region over a cell region of a semiconductor substrate; forming a trench in the...
US20130240986 Semiconductor Device Including Charged Structure and Methods for Manufacturing A Semiconductor Device  
A semiconductor device includes a trench region extending into a drift zone of a semiconductor body from a surface. The semiconductor device further includes a dielectric structure extending along...
US20130237045 METHODS OF FABRICATING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES FORMED THEREBY  
A method of fabricating a semiconductor device comprises: forming an etch stop layer to cover sidewall and top surfaces of first and second dummy gate patterns on a substrate; and forming an...
US20130235666 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACURING THE SAME  
A nonvolatile semiconductor memory device according to an embodiment includes: a memory cell array in which a plurality of NAND cell units are arranged, the NAND cell units including a plurality...
US20130175610 TRANSISTOR WITH STRESS ENHANCED CHANNEL AND METHODS FOR FABRICATION  
A transistor device and methods for its fabrication are provided. In an embodiment, the transistor is fabricated within and on a surface of a semiconductor substrate. The method includes forming a...
US20130161735 TRANSISTOR STRUCTURE AND METHOD FOR PREPARING THE SAME  
A transistor structure includes a semiconductor substrate; a conductor having a lower block in the semiconductor substrate and an upper block on the semiconductor substrate; a metal layer...
US20130126904 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
A silicon carbide layer includes a first region having a first conductivity type, a second region provided on the first region and having a second conductivity type, and a third region provided on...
US20130099247 SEMICONDUCTOR DEVICES HAVING A RECESSED ELECTRODE STRUCTURE  
An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be...
US20130083568 COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR  
An HEMT includes, on an SiC substrate, a compound semiconductor layer, a silicon nitride (SiN) protective film having an opening and covering the compound semiconductor layer, and a gate electrode...
US20130082322 SEMICONDUCTOR DEVICE WITH SELF-CHARGING FIELD ELECTRODES  
Disclosed is a semiconductor device including a drift region of a first doping type, a junction between the drift region and a device region, and at least one field electrode structure in the...
US20130043490 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE DEVICE  
The semiconductor device 100 of this invention includes: a semiconductor layer 2 arranged on the principal surface of a substrate 1 and made of a wide bandgap semiconductor; a trench 5 which is...
US20130040443 Method for Manufacturing a Semiconductor Device  
A method for forming a semiconductor device is provided. The method includes providing a semiconductor body with a horizontal surface. An epitaxy hard mask is formed on the horizontal surface. An...
US20130005130 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME  
The present invention relates to a semiconductor device, which includes a junction region formed in an active area of a semiconductor substrate; a trench defining a buried gate predetermined area...
US20130005129 STRUCTURE AND METHOD TO INTEGRATE EMBEDDED DRAM WITH FINFET  
Various embodiment integrate embedded dynamic random access memory with fin field effect transistors. In one embodiment, a first fin structure and at least a second fin structure are formed on a...
US20120319165 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME  
Object of the invention is to reduce the on resistance between source and drain of a nitride semiconductor device. Between a nitride semiconductor layer lying between source and drain regions and...
US20120299089 Semiconductor Device and Method for Manufacturing the same  
It is disclosed a semiconductor device and a method for manufacturing the same. One method comprises providing a semiconductor layer that is formed on an insulating layer; forming a mask pattern...
US20120292688 HIGHLY INTEGRATED MOS DEVICE AND THE MANUFACTURING METHOD THEREOF  
A MOS semiconductor device and the manufacturing method thereof relates to a highly integrated MOS device having a three-dimensional structure. The method of manufacturing the highly integrated...
US20120281490 SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE AND METHOD OF MANUFACTURING THE SAME  
A technology is capable of improving a process margin in forming a bit line and reducing bit line resistance to improve characteristic of the semiconductor device by forming a cell bit line in a...
US20120220115 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE  
A method for fabricating a semiconductor device includes forming at least two gate patterns on a substrate, forming sidewalls surrounding the gate patterns, wherein the sidewalls extend above an...
US20120220090 METHOD FOR MANUFACTURING AN INTEGRATED POWER DEVICE ON A SEMICONDUCTOR SUBSTRATE AND CORRESPONDING DEVICE  
An embodiment of a method for manufacturing a power device being integrated on a semiconductor substrate comprising at least the steps of making, in the semiconductor substrate, at least a trench...
US20120214297 METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING BURIED CHANNEL ARRAY TRANSISTOR  
A method of fabricating a semiconductor device includes partially removing an active region and an isolation region to form a gate buried trench, forming a gate insulating layer on an inner wall...
US20120184095 Method for Manufacturing a Semiconductor Device  
A method for forming a semiconductor device is provided. The method includes providing a semiconductor body with a horizontal surface. An epitaxy hard mask is formed on the horizontal surface. An...
US20120164812 Methods of Manufacturing Semiconductor Devices  
In a method of manufacturing a semiconductor device, a mask is formed on a substrate. The substrate is divided into a first region and a second region. An upper portion of the substrate in the...
US20120161153 SEMICONDUCTOR DEVICE  
A semiconductor device of one embodiment, including the semiconductor layer including a III-V group nitride semiconductor; a groove portion formed in the semiconductor layer; the gate insulating...
US20120156869 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH BURIED GATE  
A method for fabricating a semiconductor device includes forming a hard mask pattern over a substrate, forming an isolation layer for defining an active region by using the hard mask pattern,...
US20120153381 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME  
A semiconductor device and a method for forming the same are disclosed. A method for forming a semiconductor device includes forming a trench by etching a semiconductor substrate, forming a...
US20120149185 Methods Of Manufacturing Semiconductor Devices  
Methods of manufacturing semiconductor devices include forming an integrated structure and a first stopping layer pattern in a first region. A first insulating interlayer and a second stopping...
US20120146133 Method for Producing a Semiconductor Component with Insulated Semiconductor Mesas  
A method for producing a semiconductor component is provided. The method includes providing a semiconductor body with a first surface and a second surface opposite to the first surface, etching an...
US20120135593 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME  
A nonvolatile semiconductor memory device includes a plurality of memory strings, each of which has a plurality of electrically rewritable memory cells connected in series; and select transistors,...
US20120126884 DOUBLE GATED FIN TRANSISTORS AND METHODS OF FABRICATING AND OPERATING THE SAME  
A semiconductor device is provided that includes a fin having a first upper gate on a sidewall of the fin in a first trench and a second upper gate formed on the opposite sidewall of the fin. The...
US20120126308 NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME  
A non-volatile memory device includes a plurality of memory cells stacked along a channel protruded from a substrate, a first select transistor connected to one end of the plurality of memory...
Matches 351 - 400 out of 438 < 1 2 3 4 5 6 7 8 9 >