Matches 301 - 350 out of 438 < 1 2 3 4 5 6 7 8 9 >


Match Document Document Title
US20160118474 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME  
A semiconductor device includes a semiconductor substrate including a trench, a gate insulation film located over a bottom and sidewall of the trench, a first gate formed over the gate insulation...
US20160099308 OXIDE TERMINATED TRENCH MOSFET WITH THREE OR FOUR MASKS  
An oxide termination semiconductor device may comprise a plurality of gate trenches, a gate runner, and an insulator termination trench. The gate trenches are located in an active region. Each...
US20160093728 Semiconductor Device and Method of Manufacturing the Same  
A semiconductor device comprises a semiconductor body. The semiconductor body comprises insulated gate field effect transistor cells. At least one of the insulated gate field effect transistor...
US20160079375 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME  
According to one embodiment, the electrodes are provided in the first semiconductor layer and extend in a first direction. The gate electrodes are provided on the electrodes and extend in the...
US20160064490 METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND SILICON CARBIDE SEMICONDUCTOR DEVICE  
A silicon carbide substrate has first to third semiconductor layers. The first and third semiconductor layers have a first conductivity type, and the second semiconductor layer has a second...
US20160064223 METHOD OF FORMING METAL GATE ELECTRODE  
An aspect of this description relates to a method that includes partially filling an opening in a dielectric material with a high-dielectric-constant material. The method also includes partially...
US20160049485 METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE  
A trench having an opening and a corner portion is formed in a silicon carbide substrate. A corner insulating film is formed to cover the corner portion. A gate insulating film is formed to cover...
US20160049483 SEMICONDUCTOR STRUCTURE AND MANUFACUTING METHOD OF THE SAME  
The present disclosure provide a semiconductor structure, including a substrate having a top surface; a gate over the substrate, the gate including a footing region in proximity to the top...
US20160013282 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME  
A semiconductor device, comprises: a semiconductor layer, a first gate insulating film, a second gate insulating film and a gate electrode. The semiconductor layer is mainly made of gallium...
US20160005826 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME  
A trench has first to third side surfaces respectively constituted of first to third semiconductor layers. A first side wall portion included in a first insulating film has first to third regions...
US20150371991 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME  
One semiconductor device includes an active region on a semiconductor substrate, a trench having a lower section and an upper section within the active region, a gate insulating film that covers...
US20150325685 Power Semiconductor Device with Low RDSON and High Breakdown Voltage  
A semiconductor structure is disclosed. The semiconductor structure includes a trench having substantially parallel trench sidewalls, and a tapered dielectric liner in the trench. The tapered...
US20150325662 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE  
A method for manufacturing a semiconductor device, comprising: forming a gate trench on a substrate; forming a gate dielectric layer and a metal gate layer thereon in the gate trench; forming a...
US20150318366 FABRICATING METHOD OF TRENCH GATE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR  
A trench gate metal oxide semiconductor field effect transistor includes a substrate and a gate. The substrate has a trench. The trench is extended downwardly from a surface of the substrate. The...
US20150318365 TRANSISTOR DEVICE AND RELATED MANUFACTURING METHOD  
A transistor device may include a substrate that has a recess and a substrate surface, wherein the recess is recessed with respect to the substrate surface. The transistor device may further...
US20150311294 Method for Producing a Controllable Semiconductor Component Having a Plurality of Trenches  
A method of producing a controllable semiconductor component includes providing a semiconductor body with a top side and a bottom side, and forming a first trench protruding from the top side into...
US20150303269 TRANSISTOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME  
Provided is a semiconductor device including a pillar, a gate electrode having a first conductive pattern surrounding the pillar and a plurality of second conductive patterns which protrude from...
US20150295079 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD  
[Problem] To provide a semiconductor device wherein withstand voltage of a gate insulating film at the upper edge of a trench is improved, and a method for manufacturing the semiconductor device....
US20150270373 REPLACEMENT METAL GATE  
A replacement metal gate process which includes forming a fin on a semiconductor substrate; forming a dummy gate structure on the fin; removing the dummy gate structure to leave an opening that is...
US20150270362 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME  
A semiconductor device and a method for manufacturing the same are capable of improving GIDL in a buried gate, and preventing degradation of device characteristics and reliability due to reduction...
US20150263009 SEMICONDUCTOR DEVICE HAVING BURIED GATE, METHOD OF FABRICATING THE SAME, AND MODULE AND SYSTEM HAVING THE SAME  
A semiconductor device includes junction regions formed in upper portions of both sidewalls of a trench formed in a semiconductor substrate, a first gate electrode buried in the trench and having...
US20150255553 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
A semiconductor device having a groove provided in a semiconductor substrate, a gate insulating film provided so as to cover an inside surface of the groove, a first conductive film provided...
US20150145027 METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE  
A method for fabricating a semiconductor device is provided according to one embodiment of the present invention and includes forming an interlayer dielectric on a substrate; forming a trench...
US20150140797 3D MEMORY  
Three-dimensional memory cells and methods of making and using the memory cells are discussed generally herein. In one or more embodiments, a three-dimensional vertical memory can include a memory...
US20150079779 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING FIN-SHAPED FIELD EFFECT TRANSISTOR  
Disclosed is a semiconductor device including: an active region defined by an element isolation region; a gate trench going across the active region to define source/drain regions on both sides...
US20150079778 VERTICAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
A vertical semiconductor device includes a first active pillar vertically protruded from a semiconductor substrate; a first vertical gate connected to at least one side of the first active pillar...
US20150079740 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE HAVING AN EMBEDDED SOURCE/DRAIN  
A method for fabricating a semiconductor device is provided. A first gate pattern and a second gate pattern are adjacent to each other and are formed on an active region of a substrate. The active...
US20150076591 Semiconductor Device and Method of Manufacturing the Same  
A semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface. The semiconductor device further includes first and second trenches...
US20150072513 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
A semiconductor device comprises a bit line formed over a semiconductor substrate. The bit line has an upper portion and a lower portion, and the upper portion is narrower than the lower portion....
US20150069317 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
According to one embodiment, a semiconductor device includes a semiconductor substrate with a groove for forming an embedded gate therein, and a gate electrode embedded via a gate insulator film...
US20150031195 Method of Fabricating a Semiconductor Device  
A method of fabricating a semiconductor device may include conformally forming a gate insulating layer on a substrate having a recess, conformally forming a barrier layer containing fluorine-free...
US20150011081 METHOD OF FABRICATING SEMICONDUCTOR DEVICE  
In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves...
US20150001622 THIN BODY SWITCH TRANSISTOR  
An integrated recessed thin body field effect transistor (FET) and methods of manufacture are disclosed. The method includes recessing a portion of a semiconductor material. The method further...
US20140308807 METHOD FOR FABRICATING A SEMICONDUCTOR MEMORY  
A method for fabricating a semiconductor memory includes the following steps. Active areas are defined in a substrate. An oxide layer is then formed on the active areas. The oxide layer is...
US20140299931 NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME  
A nonvolatile memory device includes a substrate comprising a first word line formation area, a second word line formation area, and a support area interposed between the first and second word...
US20140264568 SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING THE SAME  
In a method of manufacturing a semiconductor device, a trench is formed by removing an upper portion of a substrate. A gate insulation layer pattern is formed on an inner wall of the trench. A...
US20140256125 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME  
A semiconductor device includes a substrate including a trench, a buried gate filling a part of the trench, an inter-layer dielectric layer formed on the buried gate to gap-fill the rest of the...
US20140252465 SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME  
A semiconductor device has a semiconductor substrate including a body region, a drift region, a trench that extends from a surface of the semiconductor substrate into the drift region through the...
US20140203344 3D MEMORY  
Three-dimensional memory cells and methods of making and using the memory cells are discussed generally herein. In one or more embodiments, a three-dimensional vertical memory can include a memory...
US20140193968 Semiconductor Device and Manufacturing Method of the Same  
A method for manufacturing a semiconductor device having a field-effect transistor, including forming a trench in a semiconductor substrate, forming a first insulating film in the trench, forming...
US20140193966 METHODS OF MANUFACTURING VERTICAL SEMICONDUCTOR DEVICES  
Methods of manufacturing vertical semiconductor devices may include forming a mold structure including sacrificial layers and insulating interlayers with a first opening formed therethrough. The...
US20140191306 Semiconductor Constructions, Methods of Forming Vertical Memory Strings, and Methods of Forming Vertically-Stacked Structures  
Some embodiments include methods of forming vertical memory strings. A trench is formed to extend through a stack of alternating electrically conductive levels and electrically insulative levels....
US20140187031 SEMICONDUCTOR DEVICE WITH RECESS GATE AND METHOD FOR FABRICATING THE SAME  
A method for fabricating a semiconductor device includes forming a conductive layer over first and second regions of a semiconductor substrate, forming a trench extended in the first region of the...
US20140179094 SEMICONDUCTOR DEVICE HAVING FIELD PLATE ELECTRODE AND METHOD FOR MANUFACTURING THE SAME  
According to one embodiment, in a semiconductor device, a first semiconductor layer of a first conductivity type has a first impurity concentration. A second semiconductor layer of the first...
US20140167150 POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
There is provided a power semiconductor device including a contact formed in an active region, a trench gate extendedly formed from the first region into a first termination region and formed...
US20140131784 Semiconductor Constructions and Methods of Forming Semiconductor Constructions  
Some embodiments include a semiconductor construction having a stack containing alternating levels of control gate material and intervening dielectric material. A channel material panel extends...
US20140124854 SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME  
Semiconductor devices and methods of forming the same may be provided. The semiconductor devices may include a trench in a substrate. The semiconductor devices may also include a bulk electrode...
US20140120710 SEMICONDUCTOR DEVICE WITH BURIED GATE AND METHOD FOR FABRICATING THE SAME  
A semiconductor device includes buried gates formed over a substrate, storage node contact plugs which are formed over the substrate and include a pillar pattern and a line pattern disposed over...
US20140110778 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF  
The present invention discloses a semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes a gate insulating layer formed on an inner wall of...
US20140106555 METHOD FOR FORMING A SEMICONDUCTOR DEVICE  
A method for forming a semiconductor device. One embodiment provides a semiconductor substrate having a trench with a sidewall isolation. The sidewall isolation is removed in a portion of the...

Matches 301 - 350 out of 438 < 1 2 3 4 5 6 7 8 9 >